JP2006135208A5 - - Google Patents
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- Publication number
- JP2006135208A5 JP2006135208A5 JP2004324641A JP2004324641A JP2006135208A5 JP 2006135208 A5 JP2006135208 A5 JP 2006135208A5 JP 2004324641 A JP2004324641 A JP 2004324641A JP 2004324641 A JP2004324641 A JP 2004324641A JP 2006135208 A5 JP2006135208 A5 JP 2006135208A5
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- light
- earth element
- manufacturing
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052761 rare earth metal Inorganic materials 0.000 claims 27
- 150000002500 ions Chemical class 0.000 claims 22
- 238000004519 manufacturing process Methods 0.000 claims 17
- 238000009826 distribution Methods 0.000 claims 16
- 238000000034 method Methods 0.000 claims 14
- 238000009792 diffusion process Methods 0.000 claims 10
- 239000000463 material Substances 0.000 claims 9
- 238000010438 heat treatment Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000012298 atmosphere Substances 0.000 claims 5
- 230000007704 transition Effects 0.000 claims 3
- 229910052684 Cerium Inorganic materials 0.000 claims 2
- 229910052691 Erbium Inorganic materials 0.000 claims 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims 2
- 229910052771 Terbium Inorganic materials 0.000 claims 2
- 229910052775 Thulium Inorganic materials 0.000 claims 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims 2
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 claims 2
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 239000012300 argon atmosphere Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004324641A JP4529646B2 (ja) | 2004-11-09 | 2004-11-09 | 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004324641A JP4529646B2 (ja) | 2004-11-09 | 2004-11-09 | 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006135208A JP2006135208A (ja) | 2006-05-25 |
| JP2006135208A5 true JP2006135208A5 (enExample) | 2007-10-25 |
| JP4529646B2 JP4529646B2 (ja) | 2010-08-25 |
Family
ID=36728464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004324641A Expired - Fee Related JP4529646B2 (ja) | 2004-11-09 | 2004-11-09 | 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4529646B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201019725D0 (en) | 2010-11-22 | 2011-01-05 | Univ Surrey | Optoelectronic devices |
| US10957815B2 (en) | 2017-09-05 | 2021-03-23 | Sharp Kabushiki Kaisha | Light-emitting device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8711373D0 (en) * | 1987-05-14 | 1987-06-17 | Secr Defence | Electroluminescent silicon device |
| DE69323884T2 (de) * | 1993-10-20 | 1999-07-22 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer Herstellung |
| JP3027092B2 (ja) * | 1994-07-27 | 2000-03-27 | シャープ株式会社 | 多孔質シリコン発光層の形成法 |
| JP3600872B2 (ja) * | 1996-04-30 | 2004-12-15 | 独立行政法人理化学研究所 | 希土類元素ドープＳｉ材料およびその製造方法 |
| JPH1117217A (ja) * | 1997-06-27 | 1999-01-22 | Res Dev Corp Of Japan | 発光素子材料の製造方法 |
| FR2789496B1 (fr) * | 1999-02-10 | 2002-06-07 | Commissariat Energie Atomique | Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif |
| JP4410894B2 (ja) * | 2000-01-21 | 2010-02-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
| JP2002344012A (ja) * | 2001-05-17 | 2002-11-29 | Matsushita Electric Ind Co Ltd | 多孔性シリコン基板及びそれを用いた発光素子並びに多孔性シリコン基板の製造方法 |
| US7095058B2 (en) * | 2003-03-21 | 2006-08-22 | Intel Corporation | System and method for an improved light-emitting device |
| JP4815860B2 (ja) * | 2004-11-11 | 2011-11-16 | ソニー株式会社 | 発光素子及びその製造方法 |
| JP4956916B2 (ja) * | 2005-05-30 | 2012-06-20 | ソニー株式会社 | 発光素子及び発光装置 |
-
2004
- 2004-11-09 JP JP2004324641A patent/JP4529646B2/ja not_active Expired - Fee Related
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