JP2006135208A5 - - Google Patents

Claims (23)

Forming a rare earth element diffusion region having a predetermined distribution in the substrate;
And a step of moving the diffusion region of the rare earth element ions in the depth direction of the substrate while maintaining the distribution state of the rare earth element ions in a predetermined distribution state by heat treatment. Area manufacturing method. A method for manufacturing a light emitting device comprising a quantum well and a rare earth element ion in a light emitting layer formed on a substrate,
After introducing the rare earth element ions into the material layer constituting the light emitting layer in contact with the quantum well,
Performing a heat treatment for maintaining the distribution state of the rare earth element ions introduced into the material layer constituting the light emitting layer in a predetermined distribution state and moving the diffusion region of the rare earth element ions in the depth direction of the substrate. A method for manufacturing a light-emitting element. The heat treatment for maintaining the distribution state of the rare earth element ions introduced into the material layer constituting the light emitting layer in a predetermined distribution state and moving the diffusion region of the rare earth element ions in the depth direction of the substrate,
After the heat treatment performed after the rare earth element ions are introduced into the material layer constituting the light emitting layer,
The method for manufacturing a light-emitting element according to claim 2. The method for manufacturing a light-emitting element according to claim 2, wherein the position of the concentration distribution peak value in the rare earth element ion diffusion region is within a range in which energy transition by the Forster mechanism occurs from the quantum well. The method of manufacturing a light emitting element according to claim 2, wherein the position of the concentration distribution peak value in the rare earth element ion diffusion region is within a range of 10 nm from the quantum well. The method of manufacturing a light emitting element according to claim 2, wherein the position of the concentration distribution peak value in the rare earth element ion diffusion region is set within a range in which energy transition from the quantum well by a Dexter mechanism occurs. The method of manufacturing a light emitting element according to claim 2, wherein the position of the concentration distribution peak value in the rare earth element ion diffusion region is within a range of 1 nm from the quantum well. The method for manufacturing a light-emitting element according to claim 2, wherein the position of the concentration distribution peak value in the rare earth element ion diffusion region is within a range where energy transition from the quantum well via photons occurs. The method for manufacturing a light-emitting element according to claim 2, wherein the light-emitting layer includes a quantum well, a rare earth element ion, and a material layer mainly composed of silicon. The method for manufacturing a light-emitting element according to claim 2, wherein the material layer mainly containing silicon is made of a silicon-based oxide. The rare earth element is eurobium (Eu) , praseodymium (Pr), erbium (Er), terbium (Tb), cerium (Ce), thulium (Tm), or a plurality of rare earth elements. The manufacturing method of the light emitting element of description. The method for manufacturing a light-emitting element according to claim 2, wherein the heat treatment is performed in an inert atmosphere. The method for manufacturing a light-emitting element according to claim 12, wherein the inert atmosphere is an argon atmosphere. The method for manufacturing a light-emitting element according to claim 12, wherein the inert atmosphere is a nitrogen atmosphere. The method for manufacturing a light-emitting element according to claim 12, wherein the inert atmosphere is a vacuum atmosphere. The material layer constituting the light emitting layer is:
The method for manufacturing a light-emitting element according to claim 2, wherein the light-emitting element is formed by a chemical vapor deposition method or a sputtering method using a SiO _{2 -x} (2 ≧ x ≧ 0) film and then annealing. A light-emitting device comprising a quantum well and a rare earth element ion in a light-emitting layer formed on a substrate,
The light-emitting element is characterized in that the rare earth element ion diffusion region moves in the depth direction of the substrate while the rare earth element ion distribution state is maintained in a predetermined distribution state by heat treatment. The light emitting device according to claim 17 , wherein the light emission intensity is adjusted by moving a center position of the distribution of the rare earth element ions. The light emitting device according to claim 17, wherein the center position of the distribution of the rare earth element ions is moved by heat treatment. The light emitting device according to claim 17, wherein the rare earth element ions are introduced into the light emitting layer by an ion implantation method. The light emitting device according to claim 17 , wherein the light emitting layer is composed of a quantum well, a rare earth element ion, and a material layer mainly composed of silicon. The light-emitting element according to claim 21, wherein the material layer containing silicon as a main component is made of a silicon-based oxide. The rare earth element, europium (Eu), praseodymium (Pr), erbium (Er), terbium (Tb), cerium (Ce), claim 17, characterized in that the thulium (Tm) or more of rare earth elements The light emitting element of description.