JP4526772B2 - 半導体装置及び半導体装置の作製方法 - Google Patents

半導体装置及び半導体装置の作製方法 Download PDF

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Publication number
JP4526772B2
JP4526772B2 JP2003076995A JP2003076995A JP4526772B2 JP 4526772 B2 JP4526772 B2 JP 4526772B2 JP 2003076995 A JP2003076995 A JP 2003076995A JP 2003076995 A JP2003076995 A JP 2003076995A JP 4526772 B2 JP4526772 B2 JP 4526772B2
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film
semiconductor
base film
semiconductor film
cells
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Japanese (ja)
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JP2004006725A5 (enExample
JP2004006725A (ja
Inventor
清 加藤
利彦 齋藤
敦生 磯部
徹 高山
純矢 丸山
裕吾 後藤
由美子 大野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2003076995A 2002-03-26 2003-03-20 半導体装置及び半導体装置の作製方法 Expired - Fee Related JP4526772B2 (ja)

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JP2003076995A JP4526772B2 (ja) 2002-03-26 2003-03-20 半導体装置及び半導体装置の作製方法

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JP2002085807 2002-03-26
JP2003076995A JP4526772B2 (ja) 2002-03-26 2003-03-20 半導体装置及び半導体装置の作製方法

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JP2004006725A JP2004006725A (ja) 2004-01-08
JP2004006725A5 JP2004006725A5 (enExample) 2006-05-11
JP4526772B2 true JP4526772B2 (ja) 2010-08-18

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122280A1 (en) 2004-06-14 2005-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and communication system
JP5072196B2 (ja) * 2004-06-14 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2001047A1 (en) * 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US8309474B1 (en) * 2011-06-07 2012-11-13 Ultratech, Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
US9117149B2 (en) 2011-10-07 2015-08-25 Industrial Technology Research Institute Optical registration carrier
JP6086394B2 (ja) * 2015-03-11 2017-03-01 株式会社ブイ・テクノロジー 薄膜トランジスタ基板、表示パネル、レーザーアニール方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184517A (ja) * 1983-04-05 1984-10-19 Agency Of Ind Science & Technol 積層型半導体装置の製造方法
WO1997008752A1 (fr) * 1995-08-25 1997-03-06 Hitachi, Ltd. Dispositif semiconducteur mis
JPH11121753A (ja) * 1997-10-14 1999-04-30 Hitachi Ltd 半導体装置及びその製造方法

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