JP4524997B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

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Publication number
JP4524997B2
JP4524997B2 JP2003108767A JP2003108767A JP4524997B2 JP 4524997 B2 JP4524997 B2 JP 4524997B2 JP 2003108767 A JP2003108767 A JP 2003108767A JP 2003108767 A JP2003108767 A JP 2003108767A JP 4524997 B2 JP4524997 B2 JP 4524997B2
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JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor layer
grown
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003108767A
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English (en)
Japanese (ja)
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JP2003318494A5 (enExample
JP2003318494A (ja
Inventor
徳也 小崎
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2003108767A priority Critical patent/JP4524997B2/ja
Publication of JP2003318494A publication Critical patent/JP2003318494A/ja
Publication of JP2003318494A5 publication Critical patent/JP2003318494A5/ja
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Publication of JP4524997B2 publication Critical patent/JP4524997B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2003108767A 1997-11-26 2003-04-14 窒化物半導体素子 Expired - Fee Related JP4524997B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003108767A JP4524997B2 (ja) 1997-11-26 2003-04-14 窒化物半導体素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-324998 1997-11-26
JP32499897 1997-11-26
JP2003108767A JP4524997B2 (ja) 1997-11-26 2003-04-14 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13161898A Division JP3847000B2 (ja) 1997-11-26 1998-05-14 窒化物半導体基板上に活性層を備えた窒化物半導体層を有する窒化物半導体素子及びその成長方法

Publications (3)

Publication Number Publication Date
JP2003318494A JP2003318494A (ja) 2003-11-07
JP2003318494A5 JP2003318494A5 (enExample) 2005-09-15
JP4524997B2 true JP4524997B2 (ja) 2010-08-18

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ID=29551582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003108767A Expired - Fee Related JP4524997B2 (ja) 1997-11-26 2003-04-14 窒化物半導体素子

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JP (1) JP4524997B2 (enExample)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
DE69633203T2 (de) * 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
JPH09232629A (ja) * 1996-02-26 1997-09-05 Toshiba Corp 半導体素子
JP3847000B2 (ja) * 1997-11-26 2006-11-15 日亜化学工業株式会社 窒化物半導体基板上に活性層を備えた窒化物半導体層を有する窒化物半導体素子及びその成長方法

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JP2003318494A (ja) 2003-11-07

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