JP2003318494A5 - - Google Patents
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- Publication number
- JP2003318494A5 JP2003318494A5 JP2003108767A JP2003108767A JP2003318494A5 JP 2003318494 A5 JP2003318494 A5 JP 2003318494A5 JP 2003108767 A JP2003108767 A JP 2003108767A JP 2003108767 A JP2003108767 A JP 2003108767A JP 2003318494 A5 JP2003318494 A5 JP 2003318494A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003108767A JP4524997B2 (ja) | 1997-11-26 | 2003-04-14 | 窒化物半導体素子 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32499897 | 1997-11-26 | ||
| JP9-324998 | 1997-11-26 | ||
| JP2003108767A JP4524997B2 (ja) | 1997-11-26 | 2003-04-14 | 窒化物半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13161898A Division JP3847000B2 (ja) | 1997-11-26 | 1998-05-14 | 窒化物半導体基板上に活性層を備えた窒化物半導体層を有する窒化物半導体素子及びその成長方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003318494A JP2003318494A (ja) | 2003-11-07 |
| JP2003318494A5 true JP2003318494A5 (enExample) | 2005-09-15 |
| JP4524997B2 JP4524997B2 (ja) | 2010-08-18 |
Family
ID=29551582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003108767A Expired - Fee Related JP4524997B2 (ja) | 1997-11-26 | 2003-04-14 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4524997B2 (enExample) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3239622B2 (ja) * | 1994-08-12 | 2001-12-17 | 松下電器産業株式会社 | 半導体薄膜の形成方法 |
| US6377596B1 (en) * | 1995-09-18 | 2002-04-23 | Hitachi, Ltd. | Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices |
| JPH09232629A (ja) * | 1996-02-26 | 1997-09-05 | Toshiba Corp | 半導体素子 |
| JP3847000B2 (ja) * | 1997-11-26 | 2006-11-15 | 日亜化学工業株式会社 | 窒化物半導体基板上に活性層を備えた窒化物半導体層を有する窒化物半導体素子及びその成長方法 |
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2003
- 2003-04-14 JP JP2003108767A patent/JP4524997B2/ja not_active Expired - Fee Related