JP4517792B2 - Naphthoquinonediazide sulfonic acid ester, positive photosensitive resin composition, semiconductor device and display element using the positive photosensitive resin composition, and manufacturing method of semiconductor device and display element - Google Patents

Description

  The present invention relates to a naphthoquinone diazide sulfonic acid ester, a positive photosensitive resin composition, a semiconductor device and a display element using the positive photosensitive resin composition, and a method for manufacturing the semiconductor device and the display element.

Conventionally, polyimide resin having excellent heat resistance and excellent electrical characteristics, mechanical characteristics, and the like has been used for the surface protection film and interlayer insulating film of the semiconductor element. Due to the thinning and miniaturization of semiconductor devices and the transition to surface mounting by solder reflow, there is a demand for significant improvements in characteristics such as heat cycle resistance and heat shock resistance, and higher performance resins are required. I came.
On the other hand, there is a technique for imparting photosensitivity to the polyimide resin itself, for example, a photosensitive polyimide resin represented by the following formula (4).

  If this is used, a part of the pattern production process can be simplified, and there is an effect of shortening the process and improving the yield, but it is necessary to spray a solvent such as N-methyl-2-pyrrolidone in the form of a spray during development. Therefore, there are problems in safety and handling. Therefore, a positive photosensitive resin composition that can be developed with an aqueous alkali solution has recently been developed. For example, Patent Document 1 discloses a positive photosensitive resin composition composed of a polybenzoxazole precursor as a base resin and a diazoquinone compound as a photosensitive material. This has high heat resistance, excellent electrical properties, and fine processability, and has the potential not only for wafer coating but also for interlayer insulation. The development mechanism of this positive photosensitive resin composition is that the unexposed portion of the diazoquinone compound is insoluble in the alkaline aqueous solution, but the diazoquinone compound undergoes a chemical change upon exposure to become soluble in the alkaline aqueous solution. By utilizing the difference in solubility between the exposed portion and the unexposed portion to dissolve and remove the exposed portion, it is possible to produce a coating film pattern of only the unexposed portion.

  When these photosensitive resin compositions are used, the sensitivity of the photosensitive resin composition is particularly important. If the sensitivity is low, the exposure time becomes long and the throughput decreases. Therefore, in an attempt to improve the sensitivity of the photosensitive resin composition, for example, when the molecular weight of the base resin is reduced, the film thickness of the unexposed area is increased during development, so that the required film thickness cannot be obtained, There arises a problem that the pattern shape collapses. Recently, the trend of reducing the size of semiconductor elements has been accelerated, and it has become important to be able to form higher resolution patterns. If priority is given to the sensitivity as described above, the pattern shape of the unexposed portion is destroyed, so that a pattern having a narrow width cannot be formed, resulting in low resolution. Conversely, if the molecular weight of the base resin is increased or the amount of the photosensitive diazoquinone compound, which is a photosensitive material, is increased, the exposed area becomes difficult to dissolve in an alkaline aqueous solution so that the unexposed area does not collapse. Or the remaining of the photosensitive resin composition (scum) occurs at the bottom of the pattern after development. Thus, in general, sensitivity and resolution are in a trade-off relationship, and development of a photosensitive resin composition that satisfies the characteristics of both has recently been strongly desired. Furthermore, the film thickness of the photosensitive resin composition after heat dehydration and ring closure has been about 5 to 7 μm in the past, but tends to increase to about 10 to 20 μm, and the photosensitive resin has high sensitivity even when it becomes thicker. Development of compositions is desired.

Japanese Examined Patent Publication No. 1-46862

  The present invention provides a naphthoquinone diazide sulfonic acid ester which is a photosensitive material capable of obtaining a pattern with high resolution and a high residual film ratio and high sensitivity, a positive photosensitive resin composition using the same, and It is an object of the present invention to provide a semiconductor device and a display element used, and a method for manufacturing the semiconductor device and the display element. It is another object of the present invention to provide a high-sensitivity positive photosensitive resin composition that does not cause the above-described problems even when the film thickness is increased.

The present invention
[1] A 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester or a 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester of the phenol compound represented by the general formula (1). Naphthoquinonediazide sulfonic acid ester characterized by

[2] A positive photosensitive resin composition comprising 100 parts by weight of an alkali-soluble resin (A) and 1 to 50 parts by weight of the naphthoquinone diazide sulfonate ester (B) described in [1],
[3] The positive photosensitive resin composition according to item [2], wherein the alkali-soluble resin (A) is a polyamide resin containing a structure represented by the general formula (2).

[4] The positive photosensitive resin composition according to item [3], further comprising 1 to 30 parts by weight of a phenol compound (C),
[5] The positive photosensitive resin composition according to item [4], wherein the phenol compound (C) is a phenol compound represented by the general formula (3),

[6] The positive photosensitive resin composition according to [3], [4] or [5], wherein X in the polyamide resin having a structure represented by the general formula (2) is selected from the group of the following structures:

[7] The positive photosensitive resin composition according to any one of [3] to [6], wherein Y in the polyamide resin having the structure represented by the general formula (2) is selected from the group of the following structures: ,

[8] The polyamide resin having the structure represented by the general formula (2) is end-capped with a compound containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group [3] to [3] [7] The positive photosensitive resin composition according to any one of items
[9] A step of coating the positive photosensitive resin composition according to any one of [2] to [8] on a substrate to form a composition layer, and an active energy ray on the approximate composition layer. A method for producing a patterned resin film, comprising: a step of forming a pattern by irradiation and contact with a developer; and a step of heating the general composition;
[10] A semiconductor device manufactured using the positive photosensitive resin composition according to any one of [2] to [8],
[11] A display element produced by using the positive photosensitive resin composition according to any one of [2] to [8],
[12] The positive photosensitive resin composition according to any one of [2] to [8] is applied on a semiconductor element so as to have a film thickness after heating of 0.1 to 30 μm, and prebaked. , A method for manufacturing a semiconductor device, characterized by being obtained by exposure, development, and heating,
[13] The positive photosensitive resin composition according to any one of [2] to [8] is applied onto a display element substrate so that the film thickness after heating is 0.1 to 30 μm. , Prebaking, exposure, development, heating, and a method for producing a display element obtained by heating,
It is.

  The positive-type photosensitive resin composition of the present invention has high sensitivity and high resolution with the characteristics that there is little film loss, the pattern shape does not collapse, and there is no remaining (scum) of the photosensitive resin composition in the exposed area. It has an excellent feature.

  1,2-naphthoquinone-2-diazide-5-sulfonic acid ester or 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester of the phenol compound represented by the general formula (1) used in the present invention is: It functions as a photosensitive material.

  Various examples using phenolic compounds such as 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester or 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester have been reported. In response to the demand for increasing the film thickness of the photosensitive resin composition for wafer coating, the effect of improving the sensitivity is insufficient, and further enhancement of sensitivity is required. As a result of studying various photosensitive materials, the present inventors have found that 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester or 1,2-naphthoquinone of the phenol compound represented by the general formula (1). It has been found that 2-diazide-4-sulfonic acid ester is very effective in improving sensitivity even with a thick film.

In the present invention, 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester and / or 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester of a phenol compound represented by the general formula (1) and an alkali By combining with a soluble resin, it is possible to obtain a positive photosensitive resin composition that can obtain a pattern with a high resolution and a high residual film ratio and that can obtain high sensitivity.
The phenol compound represented by the general formula (1) of the present invention is, for example,

However, it is not limited to these.
The alkali-soluble resin used in the present invention is a resin having a hydroxyl group, a carboxyl group, or a sulfonic acid group in the main chain or side chain, and has a structure represented by cresol-type novolak resin, polyhydroxystyrene, and general formula (2). The polyamide resin containing is mentioned, However, The polyamide resin containing the structure shown by General formula (2) from the heat resistant point after the last heating is preferable.

X in the polyamide resin containing the structure represented by the general formula (2) represents a divalent to tetravalent organic group, R ₆ is a hydroxyl group, O—R ₈ , m is an integer of 0 to 2, and these are It may be the same or different. Y represents a divalent to hexavalent organic group, R ₇ is a hydroxyl group, a carboxyl group, O—R ₈ or COO—R ₈ , n is an integer of 0 to 4, and these may be the same or different. Here, R ₈ is an organic group having 1 to 15 carbon atoms. However, when there is no hydroxyl group as R ₆ , at least one R ₇ must be a carboxyl group. When R ₇ has no carboxyl group, at least one R ₆ must be a hydroxyl group.

  The polyamide resin containing the structure represented by the general formula (2) is, for example, a compound selected from a diamine or bis (aminophenol) having a structure of X, 2,4-diaminophenol, and the structure of Z blended as necessary. And a compound selected from tetracarboxylic anhydride, trimellitic anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative, etc. having the structure of Y. Is obtained. In the case of dicarboxylic acid, an active ester type dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance may be used in order to increase the reaction yield or the like.

In the polyamide resin containing the structure represented by the general formula _{(2), O-R 8} , COO-R 8 as a substituent of _O-R 8, Y as a substituent of X is a hydroxyl group, an alkaline aqueous solution of the carboxyl group Is a group protected with an organic group having 1 to 15 carbon atoms for the purpose of adjusting the solubility in the solvent, and a hydroxyl group and a carboxyl group may be protected as necessary. Examples of R ₈ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. It is done.

When this polyamide resin is heated at about 250 to 400 ° C., it is dehydrated and closed, and a heat resistant resin is obtained in the form of polyimide, polybenzoxazole, or copolymerization of both.

X of the polyamide resin containing the structure represented by the general formula (2) of the present invention is, for example,

However, it is not limited to these.
Among these, as particularly preferred,

Two or more types may be used.
Moreover, Y of the polyamide resin including the structure represented by the general formula (2) is, for example,

However, it is not limited to these.
Among these, particularly preferred are:

Two or more types may be used.
In the present invention, it is desirable to seal the end from the viewpoint of storage stability. For sealing, a derivative having an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group can be introduced as an acid derivative or an amine derivative at the end of the polyamide represented by the general formula (2). Specifically, a diamine having a structure of X or a compound selected from bis (aminophenol) and 2,4-diaminophenol, a silicone diamine having a structure of Z and a tetracarboxylic having a structure of Y, which are blended as necessary. It is represented by the general formula (2) obtained by reacting with a compound selected from acid anhydride, trimellitic anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like. After synthesizing a polyamide resin containing a structure, an acid anhydride or acid derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group as the terminal amino group contained in the polyamide resin is used. And capping as an amide. Examples of the group derived from an acid anhydride or acid derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group after reacting with an amino group include:

However, it is not limited to these.
Among these, particularly preferred are:

Two or more of these may be used. The method is not limited to this method, and the terminal acid contained in the polyamide resin is capped as an amide using an amine derivative containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group. You can also

  Furthermore, Z of the polyamide resin containing the structure represented by the general formula (2) used as necessary is, for example,

However, the present invention is not limited to these, and two or more kinds may be used.
Z of the polyamide resin including the structure represented by the general formula (2) is used when particularly excellent adhesion to a substrate such as a silicon wafer is required, for example. Up to%. If it exceeds 40 mol%, the solubility of the resin is extremely lowered, developing residue (scum) is generated, and pattern processing becomes impossible.
The blending amount of the naphthoquinone diazide sulfonate ester (B), which is a photosensitive material used in the present invention, into the alkali-soluble resin (A) is 1 to 50 parts by weight with respect to 100 parts by weight of the alkali-soluble resin. If the blending amount is less than the lower limit, the patterning property of the resin becomes poor. Conversely, if the blending amount exceeds the upper limit, the sensitivity is greatly reduced.

  If necessary, a dihydropyridine derivative can be added to the positive photosensitive resin composition of the present invention in order to enhance the photosensitive properties. Examples of the dihydropyridine derivative include 2,6-dimethyl-3,5-diacetyl-4- (2′-nitrophenyl) -1,4-dihydropyridine, 4- (2′-nitrophenyl) -2,6-dimethyl- 3,5-dicarboethoxy-1,4-dihydropyridine, 4- (2 ′, 4′-dinitrophenyl) -2,6-dimethyl-3,5-dicarbomethoxy-1,4-dihydropyridine, etc. Can do.

  It has also been found that the positive photosensitive resin composition of the present invention can contain a phenol compound (C), and that a new effect is exhibited by using the phenol compound (C). 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester or 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester of the phenol compound represented by the general formula (1) is generally used, for example. The molecular size is larger than the following naphthoquinone diazide sulfonate ester.

  Therefore, the solubility of the developer can be controlled over a wide range, but the solubility of the photosensitive material that has been exposed to light and chemically changed in the exposed area is slightly worse than that of a low-molecular photosensitive material. In some cases, a development residue (scum) may occur at the pattern corner. At this time, if a low molecular weight phenol compound is added, the entire solubility in the developer can be increased, scum is eliminated, and as a result, resolution is improved and sensitivity is further improved.

The phenol compound (C) is a compound of 2 to 5 nuclei having a phenolic hydroxyl group, and they have the same number or more of hydroxyl groups with respect to the benzene ring. This is not necessarily required to have one hydroxyl group for one benzene ring, and may have two or more hydroxyl groups in one benzene ring, and the number of hydroxyl groups in the phenol compound is equal to the number of benzene rings. It is necessary to be equal to or more than the same number. In addition, halogen atoms, alkyl groups, alkoxy groups, alkyl ester groups, cycloalkyl groups, cycloalkoxy groups on the benzene ring of these phenol compounds

May be substituted. Among them, particularly preferred phenol compounds are shown below.

  Specific examples of the phenol compound represented by the general formula (3) include, but are not limited to, the following compounds.

The addition amount of a phenol compound (C) is 1-30 weight part with respect to 100 weight part of polyamide resins shown by General formula (2). When the addition amount of the phenol compound exceeds the upper limit value, the remaining film ratio is remarkably lowered during development or precipitation occurs during freezing storage, and when it is less than the lower limit value, the sensitivity during development is lowered.
If necessary, additives such as a leveling agent and a silane coupling agent can be added to the positive photosensitive resin composition in the present invention.

  In the present invention, these components are dissolved in a solvent and used in the form of a varnish. Solvents include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropio And the like, and may be used alone or in combination.

  In the method of using the positive photosensitive resin composition of the present invention, the composition is first applied to a suitable support such as a silicon wafer, a ceramic substrate, an aluminum substrate and the like. In the case of a semiconductor device, the coating amount is applied so that the final film thickness after curing is 0.1 to 30 μm. If the film thickness is less than the lower limit value, it will be difficult to fully function as a protective surface film of the semiconductor element. If the film thickness exceeds the upper limit value, it will be difficult to obtain a fine processing pattern, as well as processing. Takes a long time to reduce throughput. Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, and the like. Next, after prebaking at 60 to 130 ° C. to dry the coating film, actinic radiation is applied to the desired pattern shape. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable.

  Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. As the developer, inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, di-n Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium such as tetramethylammonium hydroxide and tetraethylammonium hydroxide An aqueous solution of an alkali such as a salt and an aqueous solution to which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added can be preferably used. As a developing method, methods such as spraying, paddle, dipping, and ultrasonic waves are possible.

  Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinse liquid. Next, heat treatment is performed to form an oxazole ring and / or an imide ring, thereby obtaining a final pattern rich in heat resistance.

  The photosensitive resin composition according to the present invention is useful not only for semiconductor applications but also as interlayer insulation for multilayer circuits, cover coats for flexible copper-clad plates, solder resist films and liquid crystal alignment films, interlayer insulation films for elements in display elements, etc. It is.

Examples of specific uses for semiconductors include a passivation film obtained by forming the above-described photosensitive resin composition film on a semiconductor element, and a photosensitive resin composition described above on a passivation film formed on a semiconductor element. Examples thereof include a buffer coat film formed by forming a physical film, and an interlayer insulating film formed by forming the above-described photosensitive resin composition film on a circuit formed on a semiconductor element.

Among them, as one application example in which the photosensitive resin composition of the present invention is used in a semiconductor device, application to a semiconductor device having bumps will be described with reference to the drawings. FIG. 1 is an enlarged cross-sectional view of a pad portion of a semiconductor device having a bump according to the present invention. As shown in FIG. 1, a passivation film 3 is formed on an input / output Al pad 2 in a silicon wafer 1, and a via hole is formed in the passivation film 3. Further, a positive photosensitive resin (buffer coating film) 4 is formed thereon, and a metal (Cr, Ti, etc.) film 5 is formed so as to be connected to the Al pad 2, and the metal film 5 is formed of solder bumps. The periphery of 10 is etched to insulate between the pads. A barrier metal 8 and a solder bump 10 are formed on the insulated pad.

Examples of display device applications include TFT interlayer insulating films, TFT element flattening films, color filter flattening films, protrusions for MVA liquid crystal display devices, and cathode partitions for organic EL elements. The usage method is based on forming the photosensitive resin composition layer patterned on the board | substrate which formed the display body element and the color filter by said method according to a semiconductor use. High transparency is required for display device applications, especially interlayer insulation films and planarization films, but by introducing a post-exposure process before curing the photosensitive resin composition layer, it is excellent in transparency. A resin layer can be obtained, which is more preferable in practical use.

Hereinafter, the present invention will be described specifically by way of examples.
Example 1
* Synthesis of naphthoquinonediazide sulfonic acid ester 34.0 g (0.05 mol) of the phenol compound of the formula (5) shown below and 1,7.2-naphthoquinone-2-diazide-4-sulfonic acid chloride 67.2 g (0. 25 moles: 5.0 moles per mole of phenol compound) and 400 ml of acetone were placed in a four-necked separable flask equipped with a thermometer, stirrer, raw material inlet, and dry nitrogen gas inlet tube. While maintaining the internal temperature at 20 ° C. or lower, 30.4 g (0.30 mol) of triethylamine was added dropwise. After stirring for 5 hours, 7.5 g of acetic acid was added for neutralization, and the precipitate was removed by filtration. The obtained solution was put into pure water, and the precipitate was collected by filtration, washed with pure water, and then vacuum-dried at room temperature to obtain the intended photosensitive material (1,2-naphthoquinone-based on 1 mol of phenol compound). 2-diazide-4-sulfonic acid 5.0 molar reactant) (Q-1).

* Synthesis of polyamide resin 360.4 g of dicarboxylic acid derivative obtained by reacting 0.9 mol of terephthalic acid, 0.1 mol of isophthalic acid and 2 mol of 1-hydroxy-1,2,3-benzotriazole (0. 9 mol) and 366.3 g (1 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane 4 equipped with a thermometer, stirrer, raw material inlet, and dry nitrogen gas inlet tube It put into the separable flask of one neck, 3000 g of N-methyl-2-pyrrolidone was added and it was made to melt | dissolve. Thereafter, the mixture was reacted at 75 ° C. for 12 hours using an oil bath.

  Next, 32.8 g (0.2 mol) of 5-norbornene-2,3-dicarboxylic anhydride dissolved in 500 g of N-methyl-2-pyrrolidone was added, and the mixture was further stirred for 12 hours to complete the reaction. After filtering the reaction mixture, the reaction mixture was put into a solution of water / methanol = 3/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, and then dried under vacuum to obtain the general formula (2) And X is a mixture of the following formulas X-1 and Y is a mixture of the following formulas Y-1 and Y-2, and the target polyamide resin (PA-1) having a = 100 and b = 0 was obtained.

* Preparation of Positive Photosensitive Resin Composition 100 g of the synthesized polyamide resin (PA-1) and 13 g of (Q-1) were dissolved in 200 g of γ-butyrolactone, and then filtered through a 0.2 μm fluororesin filter. A functional resin composition was obtained.

* Characteristic Evaluation This positive photosensitive resin composition was applied onto a silicon wafer using a spin coater and then dried on a hot plate at 120 ° C. for 4 minutes to obtain a coating film having a thickness of about 16 μm. Through this coating film, a mask made by Toppan Printing Co., Ltd. (test chart No. 1: a left pattern and a blank pattern with a width of 0.88 to 50 μm are drawn) is passed through a Nikon i-line stepper NSR-4425i. Used to irradiate with varying exposure. Next, the exposed portion was dissolved and removed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 100 seconds, and then rinsed with pure water for 30 seconds. As a result, it was confirmed that a pattern was formed from a portion irradiated with an exposure amount of 550 mJ / cm ² . (Sensitivity is 550 mJ / cm ² ). The resolution at this time was as high as 8 μm.

Example 2
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that the addition amount of the photosensitive material (Q-1) in Example 1 was changed to 18 g, and the same evaluation as in Example 1 was performed. .

Example 3
* Synthesis of naphthoquinone diazide sulfonic acid ester 34.0 g (0.05 mol) of the phenol compound of formula (5) and 80.7 g (0.30 mol: phenol of 1,2-naphthoquinone-2-diazido-4-sulfonic acid chloride) 6.0 mol) and 400 ml of acetone with respect to 1 mol of the compound were put into a four-necked separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube. 36.5 g (0.36 mol) of triethylamine was added dropwise while maintaining the temperature at or below. Thereafter, after stirring for 5 hours, 9.0 g of acetic acid was added for neutralization, and then the precipitate was removed by filtration. The obtained solution was put into pure water, and the precipitate was collected by filtration, washed with pure water, and then vacuum-dried at room temperature to obtain the intended photosensitive material (1,2-naphthoquinone-based on 1 mol of phenol compound). 2-diazide-4-sulfonic acid 6.0 mol reactant (Q-2) was obtained.
Next, a positive photosensitive resin composition was obtained in the same manner as in Example 1 except that the photosensitive material (Q-1) in Example 1 was changed to (Q-2), and the same as in Example 1. Evaluation was performed.

Example 4
* Synthesis of naphthoquinone diazide sulfonic acid ester 34.0 g (0.05 mol) of the phenol compound of the formula (5) and 53.8 g (0.20 mol: phenol of 1,2-naphthoquinone-2-diazido-4-sulfonic acid chloride) 4.0 mol) and 400 ml of acetone were added to a 4-neck separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, and then the flask internal temperature was 20 24.3 g (0.24 mol) of triethylamine was added dropwise while maintaining the temperature at or below. Then, after stirring for 5 hours, 6.0 g of acetic acid was added and neutralized, and then the precipitate was removed by filtration. The obtained solution was put into pure water, and the precipitate was collected by filtration, washed with pure water, and then vacuum-dried at room temperature to obtain the intended photosensitive material (1,2-naphthoquinone-based on 1 mol of phenol compound). 2-diazide-4-sulfonic acid 4.0 mol reactant) (Q-3) was obtained.
Next, a positive photosensitive resin composition was obtained in the same manner as in Example 1 except that the photosensitive material (Q-1) in Example 1 was changed to (Q-3). Evaluation was performed.

Example 5
In the synthesis of the polyamide resin in Example 1, in place of 0.9 mol of terephthalic acid and 0.1 mol of isophthalic acid, 1 mol of diphenyl ether-4,4′-dicarboxylic acid was used and represented by the general formula (2). A polyamide resin (PA-2) in which X is the following formula X-1 and Y is the following formula Y-3 and a = 100 and b = 0 was synthesized. Otherwise, a positive photosensitive resin composition was obtained in the same manner as in Example 1, and the same evaluation as in Example 1 was performed.

Example 6
In the synthesis of the polyamide resin in Example 5, 1 mol of 3,3′-diamino-4,4′-dihydroxyphenyl sulfone was used instead of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane. Using this, a polyamide resin (PA-3) represented by the general formula (2), wherein X is the following formula X-2, Y is the following formula Y-3, and a = 100 and b = 0 was synthesized. Otherwise, a positive photosensitive resin composition was obtained in the same manner as in Example 1, and the same evaluation as in Example 1 was performed.

Example 7
* Synthesis of naphthoquinonediazide sulfonic acid ester 34.0 g (0.05 mol) of the phenol compound of the formula (5) used in Example 1 and 1,2-naphthoquinone-2-diazide-5-sulfonic acid chloride 67.2 g ( 0.25 mol: 5.0 mol per 1 mol of phenol compound) and 400 ml of acetone were put into a four-necked separable flask equipped with a thermometer, stirrer, raw material inlet, and dry nitrogen gas inlet tube. Then, 30.4 g (0.30 mol) of triethylamine was added dropwise while keeping the temperature inside the flask at 20 ° C. or lower. After stirring for 5 hours, 7.5 g of acetic acid was added for neutralization, and the precipitate was removed by filtration. The obtained solution was put into pure water, and the precipitate was collected by filtration, washed with pure water, and then vacuum-dried at room temperature to obtain the intended photosensitive material (1,2-naphthoquinone-based on 1 mol of phenol compound). 2-diazide-5-sulfonic acid 5.0 mol reactant) (Q-4) was obtained.
Next, a positive photosensitive resin composition was obtained in the same manner as in Example 1 except that the photosensitive material (Q-1) in Example 1 was changed to (Q-4). Evaluation was performed.

Example 8
A thermometer containing 17.1 g (0.055 mol) of 4,4′-oxydiphthalic anhydride, 13.0 g (0.110 mol) of 2-methyl-2-propanol and 10.9 g (0.138 mol) of pyridine Into a four-necked separable flask equipped with a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, 150 g of N-methyl-2-pyrrolidone was added and dissolved. 14.9 g (0.110 mol) of 1-hydroxy-1,2,3-benzotriazole was added dropwise to this reaction solution together with 30 g of N-methyl-2-pyrrolidone, and then 22.7 g (0.110 mol) of dicyclohexylcarbodiimide. Was added dropwise together with 50 g of N-methyl-2-pyrrolidone and allowed to react overnight at room temperature.
Thereafter, 27.1 g of a dicarboxylic acid derivative (active ester) obtained by reacting 1 mol of diphenyl ether-4,4′-dicarboxylic acid and 2 mol of 1-hydroxy-1,2,3-benzotriazole with this reaction solution. (0.055 mol) and 44.8 g (0.122 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane with 70 g of N-methyl-2-pyrrolidone are added at room temperature. Stir for 2 hours. Thereafter, the reaction was performed in the same manner as in Example 1 except that the reaction was performed at 75 ° C. for 12 hours using an oil bath. The reaction was represented by the general formula (2), where X is the following formula X-1 and Y is the following formula Y-3. And a mixture of Y-4, a polyamide resin (PA-4) with a = 100 and b = 0 was synthesized. Otherwise, a positive photosensitive resin composition was obtained in the same manner as in Example 1, and the same evaluation as in Example 1 was performed.

Example 9
After dissolving 22.0 g (0.06 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane in 100 g of N-methyl-2-pyrrolidone, N-methyl-2-pyrrolidone Add 25.3 g (0.12 mol) of trimellitic acid chloride dissolved in 80 g while cooling to 5 ° C. or lower. Further, 11.4 g (0.144 mol) of pyridine is added and stirred at 20 ° C. or lower for 3 hours. Next, after adding 12.0 g (0.06 mol) of 4,4′-diaminodiphenyl ether, the mixture is reacted at room temperature for 5 hours. Next, the internal temperature is raised to 85 ° C. and stirred for 3 hours. After completion of the reaction, the filtered filtrate was added to water / methanol = 5/1 (volume ratio) to obtain a precipitate. It is collected by filtration, thoroughly washed with water, and dried under vacuum. The mixture is represented by the general formula (2), X is represented by the following formulas X-1 and X-3, and Y is represented by the following formula Y-5. The objective polyamide resin (PA-5) which consists of a = 100 and b = 0 was obtained. Otherwise, a positive photosensitive resin composition was obtained in the same manner as in Example 1, and the same evaluation as in Example 1 was performed.

Example 10
As in Example 1, 100 g of polyamide resin (PA-1), 13 g of (Q-1) and 15 g of the following phenol compound (P-1) were dissolved in 200 g of γ-butyrolactone, and then made of 0.2 μm fluororesin. Filtration through a filter gave a positive photosensitive resin composition. Further, the same evaluation as in Example 1 was performed.

Example 11
In the same manner as in Example 5, after dissolving 100 g of polyamide resin (PA-2), 13 g of (Q-1) and 15 g of the following phenol compound (P-1) in 200 g of γ-butyrolactone, 0.2 μm of fluororesin Filtration through a filter gave a positive photosensitive resin composition. Further, the same evaluation as in Example 1 was performed.

Example 12
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that the phenol compound (P-1) in Example 10 was changed to the following (P-2), and evaluation similar to that in Example 1 was obtained. Went.

<< Comparative Example 1 >>
* Synthesis of naphthoquinone diazide sulfonic acid ester 21.2 g (0.05 mol) of the phenol compound of the following formula (6) and 26.9 g (0.10 mol) of 1,2-naphthoquinone-2-diazide-4-sulfonic acid chloride : 2.0 moles per mole of phenol compound) and 400 ml of acetone were placed in a four-necked separable flask equipped with a thermometer, stirrer, raw material inlet, and dry nitrogen gas inlet tube, and the flask internal temperature Was maintained at 20 ° C. or lower, and 12.2 g (0.12 mol) of triethylamine was added dropwise. Then, after stirring for 5 hours, 3.0 g of acetic acid was added and neutralized, and then the precipitate was removed by filtration. The obtained solution was put into pure water, and the precipitate was collected by filtration, washed with pure water, and then vacuum-dried at room temperature to obtain the intended photosensitive material (1,2-naphthoquinone-based on 1 mol of phenol compound). 2-diazide-4-sulfonic acid 2.0 molar reactant) (Q-5) was obtained.
Next, a positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 1 was changed to (Q-5), and the same evaluation as in Example 1 was performed. Went.

<< Comparative Example 2 >>
* Synthesis of naphthoquinonediazide sulfonic acid ester 11.4 g (0.05 mol) of the phenol compound of the following formula (7) and 13.4 g (0.05 mol) of 1,2-naphthoquinone-2-diazide-4-sulfonic acid chloride : 1.0 mol per mol of phenol compound) and 400 ml of acetone were put into a four-necked separable flask equipped with a thermometer, stirrer, raw material inlet, and dry nitrogen gas inlet tube, and then the temperature inside the flask While maintaining the temperature at 20 ° C. or lower, 6.1 g (0.06 mol) of triethylamine was added dropwise. Then, after stirring for 5 hours, 1.5 g of acetic acid was added and neutralized, and then the precipitate was removed by filtration. The obtained solution was put into pure water, and the precipitate was collected by filtration, washed with pure water, and then vacuum-dried at room temperature to obtain the intended photosensitive material (1,2-naphthoquinone-based on 1 mol of phenol compound). 2-diazide-4-sulfonic acid 1.0 mol reaction product) (Q-6) was obtained.
Next, a positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 1 was changed to (Q-6), and the same evaluation as in Example 1 was performed. Went.

<< Comparative Example 3 >>
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 5 was changed to (Q-6), and the same evaluation as in Example 1 was performed. .

<< Comparative Example 4 >>
* Synthesis of naphthoquinonediazide sulfonic acid ester 21.2 g (0.05 mol) of the phenol compound of the following formula (6) and 1,2-naphthoquinone-2-diazide-5-sulfonic acid chloride 26.9 g (0.10 mol) : 2.0 moles per mole of phenol compound) and 400 ml of acetone were placed in a four-necked separable flask equipped with a thermometer, stirrer, raw material inlet, and dry nitrogen gas inlet tube, and the flask internal temperature Was maintained at 20 ° C. or lower, and 12.2 g (0.12 mol) of triethylamine was added dropwise. Then, after stirring for 5 hours, 3.0 g of acetic acid was added and neutralized, and then the precipitate was removed by filtration. The obtained solution was put into pure water, and the precipitate was collected by filtration, washed with pure water, and then vacuum-dried at room temperature to obtain the intended photosensitive material (1,2-naphthoquinone-based on 1 mol of phenol compound). 2-diazide-5-sulfonic acid 2.0 mol reactant) (Q-7) was obtained.
Next, a positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 1 was changed to (Q-7), and the same evaluation as in Example 1 was performed. Went.

<< Comparative Example 5 >>
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 10 was changed to (Q-5), and the same evaluation as in Example 1 was performed. .

<< Comparative Example 6 >>
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 11 was changed to (Q-5), and the same evaluation as in Example 1 was performed. .

<< Comparative Example 7 >>
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 12 was changed to (Q-5), and the same evaluation as in Example 1 was performed. .

<< Comparative Example 8 >>
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 10 was changed to (Q-6), and the same evaluation as in Example 1 was performed. .

<< Comparative Example 9 >>
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 11 was changed to (Q-6), and the same evaluation as in Example 1 was performed. .

<< Comparative Example 10 >>
A positive photosensitive resin composition was obtained in the same manner as in Example 1 except that (Q-1) in Example 12 was changed to (Q-6), and the same evaluation as in Example 1 was performed. .

  The evaluation results of Examples 1 to 9 and Comparative Examples 1 to 4 are shown in Table 1, and the evaluation results of Examples 10 to 12 and Comparative Examples 5 to 10 are shown in Table 2.

The naphthoquinone diazide sulfonic acid ester of the present invention and the positive photosensitive resin using the naphthoquinone diazide sulfonic acid ester are suitably used in surface protective films, interlayer insulating films, and the like of semiconductor elements and display elements.

The expanded sectional view of the pad part of an example of the semiconductor device which has a bump of the present invention is shown.

Explanation of symbols

1 Silicon wafer 2 Al pad 3 Passivation film 4 Buffer coat film 5 Metal (Cr, Ti, etc.) film 6 Wiring (Al, Cu, etc.)
7 Insulating film 8 Barrier metal 9 Solder bump

Claims (13)

1,2-naphthoquinone-2-diazide-5-sulfonic acid ester or 1,2-naphthoquinone-2-diazido-4-sulfonic acid ester of any phenol compound selected from the phenol compounds represented by the following formula A naphthoquinone diazide sulfonic acid ester characterized by that.
A positive photosensitive resin composition comprising 100 parts by weight of an alkali-soluble resin (A) and 1 to 50 parts by weight of the naphthoquinone diazide sulfonate ester (B) according to claim 1. The positive photosensitive resin composition according to claim 2, wherein the alkali-soluble resin (A) is a polyamide resin having a structure represented by the general formula (2).
The positive photosensitive resin composition according to claim 3, further comprising 1 to 30 parts by weight of a phenol compound (C). The positive photosensitive resin composition according to claim 4, wherein the phenol compound (C) is a phenol compound represented by the general formula (3).
The positive photosensitive resin composition according to claim 3, 4 or 5, wherein X in the polyamide resin having a structure represented by the general formula (2) is selected from the group of the following structures.
The positive photosensitive resin composition according to any one of claims 3 to 6, wherein Y in the polyamide resin having a structure represented by the general formula (2) is selected from the group of the following structures.

The polyamide resin containing the structure represented by the general formula (2) is end-capped with a compound containing an aliphatic group having at least one alkenyl group or alkynyl group or a cyclic compound group. A positive photosensitive resin composition according to claim 1. A step of coating the positive photosensitive resin composition according to any one of claims 2 to 8 on a substrate to form a composition layer, and irradiating an active energy ray to the approximate composition layer to develop a developer. A method for producing a patterned resin film, comprising: a step of forming a pattern by contacting with a substrate; and a step of heating the approximate composition. A semiconductor device manufactured using the positive photosensitive resin composition according to claim 2. A display element produced by using the positive photosensitive resin composition according to claim 2. The positive photosensitive resin composition according to any one of claims 2 to 8 is applied onto a semiconductor element so that the film thickness after heating is 0.1 to 30 µm, and prebaking, exposure, development, A method for manufacturing a semiconductor device, which is obtained by heating. The positive photosensitive resin composition according to any one of claims 2 to 8 is applied onto a display element substrate so that the film thickness after heating is 0.1 to 30 µm, and prebaking, exposure, A method for producing a display element, which is obtained by developing and heating.