JP4581706B2 - Positive photosensitive resin composition, semiconductor device and display element using the positive photosensitive resin composition, and method for manufacturing semiconductor device and display element - Google Patents

Description

  The present invention relates to a positive photosensitive resin composition, a semiconductor device and a display element using the positive photosensitive resin composition, and a method for manufacturing the semiconductor device and the display element.

Conventionally, polybenzoxazole resins and polyimide resins having excellent heat resistance and excellent electrical characteristics, mechanical characteristics, and the like have been used for surface protection films and interlayer insulating films of semiconductor elements. On the other hand, in order to simplify the process, a positive photosensitive resin obtained by combining the polybenzoxazole resin or polyimide resin with a photosensitive diazoquinone compound is also used (for example, see Patent Document 1). In recent years, due to miniaturization of semiconductor elements, multilayer wiring due to high integration, shift to chip size package (CSP), wafer level package (WLP), etc., low dielectric constant, gold, copper, aluminum, titanium There is a demand for improving adhesion to wirings or wiring metals such as high performance polybenzoxazole resins and polyimide resins.
When these positive photosensitive resins are used in an actual process, the problem is processing characteristics, and among them, the exposure time is particularly important. That is, in order to improve throughput, a positive photosensitive resin that can be exposed in a short time is desired.
It is known that by using an organosilicon compound for the positive photosensitive resin, the adhesion with a substrate such as silicon or a nitride film can be improved (for example, see Patent Document 2). However, it tends to be inferior to materials constituting rewiring represented by gold or the like.

Japanese Examined Patent Publication No. 1-46862 JP 2000-281969 A

  The present invention relates to a polyamide resin intended to provide a polybenzoxazole resin, a polyimide resin or a copolymer resin thereof excellent in adhesion to a substrate, and a positive photosensitive resin composition excellent in exposure characteristics using them. A semiconductor device and a display element using the positive photosensitive resin composition are provided.

Such an object is achieved by the present invention described in the following [1] to [11].
[1] A positive photosensitive resin composition comprising a polyamide resin (A), a photosensitive diazoquinone compound (B), and an organosilicon compound (C) containing S,
[2] Item [1], wherein the organosilicon compound (C) comprises one or more organosilicon compounds (C) selected from the group represented by the general formula (1) and / or (2) A positive photosensitive resin composition,

[3] The positive photosensitive resin composition according to [1] or [2], wherein the polyamide resin (A) is a polyamide resin (A) having a structure represented by the general formula (3),

[4] A positive photosensitive resin composition comprising 0.1 to 20 parts by weight of the organosilicon compound (C) according to item [1], [2] or [3],
[5] The positive photosensitive resin according to item [1], [2], [3] or [4], wherein the positive photosensitive resin composition further comprises a compound (D) having a phenolic hydroxyl group. Composition,
[6] The positive photosensitive resin composition according to item [5], wherein the compound (D) having a phenolic hydroxyl group has the following structure:

[7] A step of applying the positive photosensitive resin composition according to any one of items [1] to [6] onto a substrate to form a composition layer, and an active energy in the composition layer. A method for producing a patterned resin film, comprising: a step of forming a pattern by irradiating a line and contacting with a developer; and a step of heating the approximate composition;

[8] A semiconductor device manufactured using the positive photosensitive resin composition according to any one of items [1] to [6].

[9] A display element produced by using the positive photosensitive resin composition according to any one of items [1] to [6],

[10] Pattern processing on the semiconductor element so that the film thickness after heating the positive photosensitive resin composition according to any one of the items [1] to [6] is 0.1 to 30 μm. A method of manufacturing a semiconductor device, characterized in that

[11] The positive photosensitive resin composition according to any one of items [1] to [6] is heated on the display element substrate so that the film thickness after heating is 0.1 to 30 μm. A display element manufacturing method obtained by patterning.

  According to the present invention, a polybenzoxazole resin excellent in adhesion to the substrate, a polyimide resin, a polyamide resin for the purpose of providing a resin that is a copolymer thereof, and a positive photosensitive property excellent in exposure characteristics using them. A resin composition and a semiconductor device and a display element using the resin composition can be obtained.

The polyamide resin used in the present invention is a resin having a polybenzoxazole precursor structure, a polyamic acid structure, or a polyamic acid ester structure and having a hydroxyl group, a carboxyl group, or a sulfonic acid group in the main chain or side chain. Among these, a polyamide resin having a structure represented by the general formula (3) is preferable.
X in the general formula (3) represents a divalent to tetravalent organic group, R ₇ is a hydroxyl group or O—R ₉ , and m is an integer of 0 to 2. Each R ₇ may be the same or different. Y in the general formula (3) represents a divalent to hexavalent organic group, R ₈ is a hydroxyl group, a carboxyl group, O—R ₉ or COO—R ₉ , and n is an integer of 0 to 4. Each R ₈ may be the same or different. Here, R ₉ is an organic group having 1 to 15 carbon atoms. However, when R ₇ has no hydroxyl group, at least one R ₈ must be a carboxyl group. When R ₈ has no carboxyl group, at least one R ₇ must be a hydroxyl group.
The polyamide resin having the structure represented by the general formula (3) is, for example, a tetracarboxylic acid having a Y structure and a compound selected from a diamine or bis (aminophenol) having a structure of X, 2,4-diaminophenol or the like. It is obtained by reacting with a compound selected from acid anhydride, trimellitic acid anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like. In the case of a dicarboxylic acid, an active ester dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance may be used in order to increase the reaction yield or the like.
In the polyamide resin having the structure represented by the general formula (3), O—R ₉ as a substituent of X, O—R ₉ and COO—R ₉ as a substituent of Y are hydroxyl aqueous solutions of hydroxyl groups and carboxyl groups Is a group protected by R ₉ which is an organic group having 1 to 15 carbon atoms, and a hydroxyl group or a carboxyl group may be protected if necessary. Examples of R ₉ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. It is done.
When this polyamide resin is heated at about 250 to 400 ° C., it is dehydrated and closed, and a heat-resistant resin is obtained in the form of polyimide resin, polybenzoxazole resin, or copolymerization of both.
As X in the general formula (3), for example,

However, it is not limited to these.
Among these, particularly preferred are:

Two or more types may be used.
Y that can be used in the polyamide resin having the structure represented by the general formula (3) is, for example,

However, it is not limited to these.
Among these, particularly preferred are:

Two or more types may be used.
In the present invention, it is desirable to seal the end from the viewpoint of storage stability. For sealing, a derivative having an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group can be introduced as an acid derivative or an amine derivative at the end of the polyamide represented by the general formula (3). Specifically, for example, a compound selected from diamine or bis (aminophenol) having a structure of X, 2,4-diaminophenol, and the like, and a tetracarboxylic acid anhydride, trimellitic acid anhydride, dicarboxylic acid having a structure of Y After synthesizing a polyamide resin having a structure represented by the general formula (3) obtained by reacting with a compound selected from acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative, etc. It is preferable to cap the terminal amino group contained in the polyamide resin as an amide using an acid anhydride or acid derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group. Examples of the group derived from an acid anhydride or acid derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group after reacting with an amino group include:

However, it is not limited to these.
Among these, particularly preferred are:

Two or more types may be used.
Furthermore, Z of the polyamide resin including the structure represented by the general formula (3) used as necessary is, for example,

However, it is not limited to these.
Among these, particularly preferred are:

Two or more types may be used.
Z of the polyamide resin having the structure represented by the general formula (3) is used when particularly excellent adhesion is required for a substrate such as a silicon wafer, for example. Up to%. When it exceeds 40 mol%, the solubility of the resin in the exposed area is extremely lowered, developing residue (scum) is generated, and pattern processing becomes impossible.

  The photosensitive diazoquinone compound (B) used in the present invention is a compound having a 1,2-benzoquinonediazide or 1,2-naphthoquinonediazide structure, and is known from US Pat. Nos. 2,729,975, 2,797,213 and 3,669,658. It is a substance. For example, the following are mentioned.

  Among these, an ester of a phenol compound and 1,2-naphthoquinone-2-diazide-5-sulfonic acid or 1,2-naphthoquinone-2-diazide-4-sulfonic acid is particularly preferable. Examples of these include, but are not limited to, the following. Two or more of these may be used.

  The preferable addition amount of the photosensitive diazoquinone compound (B) used in the present invention is 1 to 50 parts by weight with respect to 100 parts by weight of the polyamide resin. If the amount is less than 1 part by weight, a good pattern cannot be obtained, and if it exceeds 50 parts by weight, the sensitivity is greatly reduced.

The organosilicon compound containing S used in the present invention improves the adhesion between the photosensitive resin and the substrate (single metal film or alloy film of gold, aluminum, copper, titanium, etc., particularly gold), and is even better. It is used for maintaining good workability. The organic silicon compounds represented by the general formulas (1) and (2) are preferable, and these may be used alone or in combination. The addition amount is desirably 0.1 to 20 parts by weight with respect to 100 parts by weight of the polyamide resin. If the amount is less than 0.1 parts by weight, it is not preferable because the effect of improving the adhesiveness cannot be obtained. Therefore, it is not preferable. Examples of the organosilicon compounds represented by the general formulas (1) and (2) include γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, bis (3-triethoxysilylpropyl) disulfane, and bis (3-triethoxy). Silylpropyl) tetrasulfane, bis (3-triethoxysilylpropyl) hexasulfane, bis (3-triethoxysilylpropyl) octasulfane, and the like, but are not limited thereto.
Further, in the present invention, it is preferable to use a compound (D) having a phenolic hydroxyl group in combination so that high-sensitivity development and no development residue (scum) can be performed at a high resolution. As for the compounding quantity of the compound which has a phenolic hydroxyl group, 1-30 weight part is preferable with respect to 100 weight part of polyamide resins. Preferred phenol compounds are those represented by the general formula (4). Specific examples of the general formula (4) include the following, but are not limited thereto.

これらの中で好ましくは

Of these, preferably

から選ばれるものである。

It is chosen from.

If necessary, additives such as a leveling agent, a silane coupling agent, a titanate coupling agent, and their respective reactants can be added to the positive photosensitive resin composition in the present invention.
The polyamide resin of the present invention is dissolved in a solvent and used in the form of a varnish. Solvents include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropio And the like, and may be used alone or in combination.
In the method of using the positive photosensitive resin composition of the present invention, first, the composition is applied to a suitable support such as a silicon wafer, a ceramic substrate, an aluminum substrate and the like. In the case of a semiconductor device, the coating amount is applied so that the final film thickness after curing is 0.1 to 50 μm. If the film thickness is less than the lower limit value, it will be difficult to fully function as a surface protection film of the semiconductor element. If the film thickness exceeds the upper limit value, it will be difficult to obtain a fine pattern. Takes a long time to reduce throughput. Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, and the like. Next, after prebaking at 60 to 130 ° C. to dry the coating film, actinic radiation is applied to the desired pattern shape. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable.

Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. Developers include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, and di-n. Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium such as tetramethylammonium hydroxide and tetraethylammonium hydroxide An aqueous solution of an alkali such as a salt and an aqueous solution to which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added can be suitably used. As a developing method, methods such as spraying, paddle, dipping, and ultrasonic waves are possible.
Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinse liquid. Next, heat treatment is performed to form an oxazole ring and / or an imide ring, thereby obtaining a final pattern rich in heat resistance.

The photosensitive resin composition according to the present invention is useful not only for semiconductor applications, but also for interlayer insulation of multilayer circuits, flexible copper-clad cover coats, solder resist films, liquid crystal alignment films, and display devices.
Examples of specific uses for semiconductors include a passivation film obtained by forming the above-described photosensitive resin composition film on a semiconductor element, and a photosensitive resin composition described above on a passivation film formed on a semiconductor element. Examples thereof include a buffer coat film formed by forming a physical film, and an interlayer insulating film formed by forming the above-described photosensitive resin composition film on a circuit formed on a semiconductor element.
Among them, as one application example in which the photosensitive resin composition of the present invention is used in a semiconductor device, application to a semiconductor device having bumps will be described with reference to the drawings. FIG. 1 is an enlarged cross-sectional view of a pad portion of a semiconductor device having a bump according to the present invention. As shown in FIG. 1, a passivation film 3 is formed on an input / output Al pad 2 in a silicon wafer 1, and a via hole is formed in the passivation film 3. Further, a positive photosensitive resin (buffer coating film) 4 is formed thereon, and a metal (Cr, Ti, etc.) film 5 is formed so as to be connected to the Al pad 2, and the metal film 5 is formed of solder bumps. 9 is etched to insulate between the pads. Barrier metal 8 and solder bumps 9 are formed on the insulated pads.
Examples of the display device application include an interlayer insulating film for TFT, a TFT element flattening film, a color filter flattening film, a protrusion for an MVA liquid crystal display device, and a cathode partition for an organic EL element. The usage method is based on forming the photosensitive resin composition layer patterned on the board | substrate which formed the display body element and the color filter by said method according to a semiconductor use. High transparency is required for display device applications, especially interlayer insulation films and planarization films, but excellent transparency is achieved by introducing a post-exposure step before curing of the photosensitive resin composition layer. A resin layer can be obtained, which is more preferable in practical use.

<< Reference Example 1 >>
[Synthesis of polyamide resin]
A thermometer containing 17.1 g (0.055 mol) of 4,4′-oxydiphthalic anhydride, 12.4 g (0.167 mol) of 2-methyl-2-propanol and 10.9 g (0.138 mol) of pyridine. Into a four-necked separable flask equipped with a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, 150 g of N-methyl-2-pyrrolidone was added and dissolved. To this reaction solution, 14.9 g (0.110 mol) of 1-hydroxy-1,2,3-benzotriazole was added dropwise together with 30 g of N-methyl-2-pyrrolidone, and then 22.7 g (0.110 mol) of dicyclohexylcarbodiimide. ) Was added dropwise together with 50 g of N-methyl-2-pyrrolidone and allowed to react overnight at room temperature. Thereafter, 27.1 g of a dicarboxylic acid derivative (active ester) obtained by reacting 1 mol of diphenyl ether-4,4′-dicarboxylic acid and 2 mol of 1-hydroxy-1,2,3-benzotriazole with this reaction solution. (0.055 mol) and 44.8 g (0.122 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane with 70 g of N-methyl-2-pyrrolidone are added at room temperature. Stir for 2 hours. Thereafter, the reaction was terminated by stirring for 12 hours at 75 ° C. using an oil bath. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, and then dried under vacuum to obtain the general formula (3) And X is the following formula X-1, Y is the following formulas Y-1 and Y-2, and a polyamide resin (A-1) having a = 100 and b = 0 was synthesized.

[Preparation of resin composition]
After dissolving in 10 g of synthesized polyamide resin (A-1), 2 g of photosensitive diazoquinone (B-1) having the following structure, 1 g of organosilicon compound (C-1) having the following structure, and 70 g of γ-butyrolactone, fluororesin The mixture was filtered with a filter made to obtain a positive photosensitive resin composition.

[Developability evaluation]
This positive photosensitive resin composition was applied on a silicon wafer using a spin coater and then dried on a hot plate at 120 ° C. for 4 minutes to obtain a coating film having a thickness of about 10 μm. Through this coating film, a mask made by Toppan Printing Co., Ltd. (test chart No. 1: remaining pattern and blank pattern with a width of 0.88 to 50 μm are drawn), Nikon Corporation i-line stepper NSR-4425i The exposure amount was increased by 200 mJ / cm ² to 10 mJ / cm ² steps. Next, the exposed portion was dissolved and removed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 80 seconds, and then rinsed with pure water for 30 seconds. When the pattern was observed, it was confirmed that the pattern was well opened up to a pattern of 5 μm with an exposure amount of 560 mJ / cm ² .

[Evaluation of the physical properties]
This positive photosensitive resin composition was applied onto a 6-inch silicon wafer that had been gold-plated to a thickness of 5 μm after curing using a spin coater, dried on a hot plate at 120 ° C. for 4 minutes, and then cleaned. Heat curing was performed at 150 ° C./30 minutes + 320 ° C./30 minutes at an oxygen concentration of 1000 ppm or less using an oven. The coating film of the unexposed part which did not perform pattern opening of the obtained coating film was cut into 100 square grids at 1 cm square. Cellotape (registered trademark) was affixed and peeled off, but the number of peeled coating films was 0, and it was confirmed that the adhesion of the cured film to the metal was excellent.

Example 2
[Synthesis of polyamide resin]
After dissolving 44.0 g (0.12 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane in 200 g of N-methyl-2-pyrrolidone, N-methyl-2-pyrrolidone 50.6 g (0.24 mol) of trimellitic anhydride chloride dissolved in 160 g was added while cooling to 5 ° C. or lower. Further, 22.8 g (0.29 mol) of pyridine was added and stirred at 20 ° C. or lower for 3 hours. Next, after adding 44.0 '(diaminodiphenyl ether) 24.0g (0.12mol), it was made to react at room temperature for 5 hours. Next, the internal temperature was raised to 85 ° C. and stirred for 3 hours. After completion of the reaction, the filtered reaction mixture was poured into water / methanol = 5/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, and then dried under vacuum to obtain the general formula (3) A target polyamide resin (A-2) having a = 100 and b = 0 was synthesized in which X is a mixture of the following formulas X-1 and X-2 and Y is the following formula Y-3. .
[Production of resin composition, developability and evaluation of physical properties]
After dissolving in 10 g of synthesized polyamide resin (A-2), 2 g of photosensitive diazoquinone (B-1) having the following structure, 0.2 g of organosilicon compound (C-2) having the following structure, and 70 g of γ-butyrolactone, It filtered with the filter made from a fluororesin, and the positive photosensitive resin composition was obtained.
When evaluation was performed in the same manner as in Reference Example 1 , it was confirmed that a pattern with an exposure amount of 550 mJ / cm ² and 4 μm was satisfactorily opened with a development time of 80 seconds. The physical property evaluation was made in the same manner as in Reference Example 1. The number of peeled coating films was 0, and it was confirmed that the adhesion was excellent.

<< Reference Example 2 >>
Using 10 g of polyamide resin (A-1) of Reference Example 1 , dissolved in 2 g of photosensitive diazoquinone (B-2) having the following structure, 1 g of organosilicon compound (C-1) having the following structure, and 70 g of γ-butyrolactone. Then, the mixture was filtered with a fluororesin filter to obtain a positive photosensitive resin composition. When the evaluation was performed in the same manner as in Reference Example 1 , it was confirmed that a pattern with an exposure amount of 540 mJ / cm ² and 5 μm was satisfactorily opened in a development time of 80 seconds. The physical property evaluation was made in the same manner as in Example 1. The number of peeled coating films was 0, and it was confirmed that the adhesion was excellent.

Example 4
10 g of polyamide resin (A-1) of Reference Example 1 , 2 g of photosensitive diazoquinone (B-2) having the following structure, 1 g of organosilicon compound (C-2) having the following structure, compound having a phenolic hydroxyl group (D-1) After dissolving in 1.5 g and γ-butyrolactone 70 g, the mixture was filtered with a fluororesin filter to obtain a positive photosensitive resin composition. When evaluation was performed in the same manner as in Reference Example 1 , it was confirmed that a pattern with an exposure amount of 370 mJ / cm 2 and 3 μm was satisfactorily opened with a development time of 80 seconds. The physical property evaluation was made in the same manner as in Reference Example 1. The number of peeled coating films was 0, and it was confirmed that the adhesion was excellent.

<< Reference Example 3 >>
Using 10 g of the polyamide resin (A-2) of Example 2, 2 g of photosensitive diazoquinone (B-2) having the following structure, 0.5 g of an organosilicon compound (C-1) having the following structure, and a phenolic hydroxyl group After dissolving in 1.5 g of the compound (D-2) having and 70 g of γ-butyrolactone, the mixture was filtered with a fluororesin filter to obtain a positive photosensitive resin composition. When evaluation was performed in the same manner as in Reference Example 1 , it was confirmed that a pattern with an exposure amount of 390 mJ / cm ² and 3 μm was satisfactorily opened in a development time of 80 seconds. The physical property evaluation was made in the same manner as in Reference Example 1. The number of peeled coating films was 0, and it was confirmed that the adhesion was excellent.

<< Comparative Example 1 >>
Using 10 g of the polyamide resin (A-1) of Reference Example 1 and dissolving in 2 g of photosensitive diazoquinone (B-1) having the following structure and 70 g of γ-butyrolactone, the mixture was filtered through a fluororesin filter, and positive photosensitive A functional resin composition was obtained. When the evaluation was performed in the same manner as in Reference Example 1 , it was confirmed that the pattern had an exposure amount of 540 mJ / cm ² and a pattern of 5 μm with a development time of 80 seconds. The physical property evaluation was made in the same manner as in Reference Example 1. The number of peeled coating films was 80, and it was confirmed that the adhesion was inferior.

<< Comparative Example 2 >>
10 g of the polyamide resin (A-1) of Reference Example 1 was dissolved in 2 g of photosensitive diazoquinone (B-2) having the following structure and 70 g of γ-butyrolactone, and then filtered through a fluororesin filter, and positive photosensitive A functional resin composition was obtained. When the evaluation was performed in the same manner as in Reference Example 1 , it was confirmed that the pattern had an exposure amount of 530 mJ / cm ² and a pattern of 6 μm with a development time of 80 seconds. The physical property evaluation was made in the same manner as in Reference Example 1. The number of peeled coating films was 90, and it was confirmed that the adhesion was inferior.

<< Comparative Example 3 >>
0.5 g of organosilicon compound (C-3) other than the organosilicon compound was added to the varnish of Comparative Example 2 to obtain a positive photosensitive resin composition. When the evaluation was performed in the same manner as in Reference Example 1 , it was confirmed that the pattern was opened to an exposure amount of 550 mJ / cm ² and 6 μm in a development time of 80 seconds. The physical property evaluation was made in the same manner as in Reference Example 1. The number of peeled coating films was 90, and it was confirmed that the adhesion was inferior.

<< Comparative Example 4 >>
1 g of an organosilicon compound (C-4) other than the organosilicon compound was added to the varnish of Comparative Example 2 to obtain a positive photosensitive resin composition. When evaluation was performed in the same manner as in Reference Example 1 , it was confirmed that the pattern had an exposure amount of 540 mJ / cm ² and an opening of 6 μm in a development time of 80 seconds. The physical property evaluation was made in the same manner as in Reference Example 1. The number of peeled coating films was 60, and it was confirmed that the adhesion was inferior.

  The present invention relates to a polyamide resin intended to provide a polybenzoxazole resin, a polyimide resin or a copolymer resin thereof excellent in adhesion to a substrate, and a positive photosensitive resin composition excellent in exposure characteristics using them. In addition to semiconductor applications, it is suitable not only for semiconductor applications but also for interlayer insulation of multilayer circuits, flexible copper-clad plate cover coats, solder resist films and liquid crystal alignment films, flattening films and insulating films of elements in display elements, etc. Can be used.

The expanded sectional view of the pad part of an example of the semiconductor device which has a bump of the present invention is shown.

Explanation of symbols

1 Silicon wafer 2 Al pad 3 Passivation film 4 Buffer coat film 5 Metal (Cr, Ti, etc.) film 6 Wiring (Al, Cu, etc.)
7 Insulating film 8 Barrier metal 9 Solder bump

Claims (10)

A positive photosensitive resin composition comprising a polyamide resin (A), a photosensitive diazoquinone compound (B) and an organosilicon compound (C) containing S , wherein the organosilicon compound (C) is represented by the general formula ( A positive photosensitive resin composition comprising at least one organosilicon compound (C) selected from the group represented by 2) .

Polyamide resin (A) is the general formula (3) The positive photosensitive resin composition according to claim 1 Symbol mounting a polyamide resin (A) having a structure represented by.

Claim 1 or 2 Symbol placement organosilicon compound (C) is a polyamide resin (A) The positive photosensitive resin composition comprising 0.1 to 20 parts by weight per 100 parts by weight. The positive photosensitive resin composition further compound having a phenolic hydroxyl group (D) comprising Claim 1, 2 or 3 Symbol placement of positive photosensitive resin composition. The positive photosensitive resin composition according to claim 4 , wherein the compound (D) having a phenolic hydroxyl group has the following structure.

A step of applying the positive photosensitive resin composition according to any one of claims 1 to 5 on a substrate to form a composition layer, and irradiating active energy rays to the approximate composition layer to develop a developer A method for producing a patterned resin film, comprising: a step of forming a pattern by contacting with a substrate; and a step of heating the approximate composition. The semiconductor device characterized by comprising been fabricated using the positive photosensitive resin composition according to any one of claims 1-5. Display element characterized by comprising been fabricated using the positive photosensitive resin composition according to any one of claims 1-5. It is obtained by patterning on a semiconductor element so that the film thickness after heating the positive photosensitive resin composition according to any one of claims 1 to 5 is 0.1 to 30 µm. A method for manufacturing a semiconductor device. The positive photosensitive resin composition according to any one of claims 1 to 5 is obtained by patterning on a display element substrate so that the film thickness after heating is 0.1 to 30 µm. A method for manufacturing a display element.

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