JP5050450B2 - Interlayer insulating film, positive photosensitive resin composition for forming protective film, protective film, interlayer insulating film, and semiconductor device and display element using the same - Google Patents

Description

  The present invention relates to a positive photosensitive resin composition, a protective film, an interlayer insulating film, and a semiconductor device and a display element using the same.

  Conventionally, polyimide resin having excellent heat resistance and excellent electrical characteristics, mechanical characteristics, etc. has been used for the surface protection film and interlayer insulation film of semiconductor elements. Due to the thinning and downsizing of semiconductor devices and the shift to surface mounting by solder reflow, there is a demand for significant improvement in heat cycle resistance, heat shock resistance, etc., and higher performance resins have become necessary. .

On the other hand, a technique for imparting photosensitivity to the polyimide resin itself has attracted attention, and examples thereof include a photosensitive polyimide resin represented by the following formula (4).

If this is used, a part of the pattern creation process can be simplified, and there is an effect of shortening the process and improving the yield. However, since a solvent such as N-methyl-2-pyrrolidone is required for development, safety and handling There is a problem with sex.
Therefore, a positive photosensitive resin composition that can be developed with an alkaline aqueous solution has recently been developed. For example, Patent Document 1 discloses a positive photosensitive resin composition composed of a polybenzoxazole precursor as a base resin and a diazoquinone compound as a photosensitizer. This has high heat resistance, excellent electrical properties, and fine processability, and has the potential as a resin composition for interlayer insulation as well as for wafer coating. The development mechanism of this positive photosensitive resin composition is as follows. The unexposed portion of the diazoquinone compound is insoluble in the aqueous alkali solution and has resistance against this by interacting with the base resin. On the other hand, upon exposure, the diazoquinone compound undergoes a chemical change, becomes soluble in an aqueous alkaline solution, and promotes dissolution of the base resin. By utilizing the difference in solubility between the exposed portion and the unexposed portion to dissolve and remove the exposed portion, a coating film pattern of only the unexposed portion can be created.

When these photosensitive resin compositions are actually used, the sensitivity of the photosensitive resin composition is particularly important. If the sensitivity is low, the exposure time becomes long and the throughput decreases. Therefore, in order to improve the sensitivity of the photosensitive resin composition, for example, when the molecular weight of the base resin is reduced, the film thickness of the unexposed area is increased during development, so that the required film thickness cannot be obtained and the low residual film is obtained. The problem that it becomes a rate and a pattern shape collapses arises. Recently, the trend of reducing the size of semiconductor elements has been accelerated, and it has become important to be able to form higher resolution patterns. As described above, when priority is given to the sensitivity, the pattern shape of the unexposed portion is destroyed, so that a pattern with a narrow width cannot be formed, resulting in low resolution. Conversely, if the molecular weight of the base resin is increased or the amount of photosensitive diazoquinone compound as the photosensitive material is increased so that the unexposed area does not collapse, for example, the film loss at the unexposed area is reduced and high resolution is likely to occur. However, since the exposed portion is hardly soluble in an alkaline aqueous solution, the sensitivity becomes low, and the remaining photosensitive resin composition (scum) occurs at the bottom of the pattern after development. Thus, in general, sensitivity and resolution are in a trade-off relationship, and development of a photosensitive resin composition that satisfies the characteristics of both has recently been strongly desired.
A technique for adding a diazoquinone compound to a polyamide resin is disclosed in, for example, Patent Document 2.

Japanese Examined Patent Publication No. 1-46862 JP 2004-117999 A

However, the prior art described in the above literature has room for improvement in the following points.
Conventional diazoquinone compounds have little effect on improving sensitivity and resolution, and there has been a problem of achieving compatibility.
The present invention has been made in view of the above circumstances, and an object of the present invention is a positive photosensitive resin composition, a protective film, an interlayer insulating film, and a semiconductor device that have high sensitivity, high resolution, and high residual film ratio. And a display element.

（式中、Ｒ_１は２価の有機基である。Ｒ_２、Ｒ_３は水素原子、ハロゲン原子、アルキル基、置換アルキル基、シクロアルキル基、置換シクロアルキル基、アリール基、置換アリール基、炭素数１〜５のアルコキシ基、または炭素数１〜５アシル基であり、それぞれ同じでも異なっていても良い。ａ，ｂ＝０〜３の整数である。Ｒ_２、Ｒ_３が複数ある場合は、それぞれ同じでも異なっていても良い。）
［２］
前記式（１）に記載のＲ_１が、炭素数１〜１５のアルキレン基、置換アルキレン基、単結合、−Ｏ−、−ＳＯ_２−、−ＣＯ_２−、アリーレン、置換アリーレン、または下記式（２）から選ばれる１種
である［１］に記載のポジ型感光性樹脂組成物。

［３］
前記ナフトキノンジアジドスルホン酸エステル化合物（Ｂ）は、前記式（１）で示されるフェノールの水酸基の６０％以上がナフトキノンジアジドスルホン酸でエステル化されてるものである［１］または［２］のいずれかに記載のポジ型感光性樹脂組成物。
［４］
前記アルカリ可溶性樹脂（Ａ）１００重量部に対して、一般式（１）で示されるフェノールのナフトキノンジアジドスルホン酸エステル化合物（Ｂ）を１〜５０重量部含むものである［１］乃至［３］のいずれかに記載のポジ型感光性樹脂組成物。
［５］
前記アルカリ可溶性樹脂（Ａ）が、ポリベンゾオキサゾール構造を含む樹脂、ポリベンゾオキサゾール前駆体構造を含む樹脂、ポリイミド構造を含む樹脂、ポリイミド前駆体構造を含む樹脂及びポリアミド酸エステル構造を含む樹脂の中から選ばれる少なくとも１種以上の樹脂を含むものである［１］乃至［４］に記載のポジ型感光性樹脂組成物。
［６］
前記アルカリ可溶性樹脂（Ａ）が式（３）で示されるポリアミド樹脂であることを特徴とする［１］乃至［５］のいずれかに記載のポジ型感光性樹脂組成物。

（式中、Ｘ、Ｙは有機基である。ｃ、ｄはモルパーセントを示し、ｃ＋ｄ＝１００で、ｃが６０以上１００以下、ｄが０以上〜４０以下である。Ｒ_４は水酸基又は−Ｏ−Ｒ_６であり、同一でも異なっても良い。Ｒ_５は水酸基、カルボキシル基、−Ｏ−Ｒ_６、−ＣＯＯ−Ｒ_６のいずれかであり、同一でも異なっても良い。ｍは０〜２の正数、ｎは０〜４の正数である。Ｒ_６は炭素数１〜１５の有機基である。ここで、Ｒ_４として水酸基がない場合、Ｒ_５は少なくとも１つはカルボキシル基でなければならない。また、Ｒ_５としてカルボキシル基がない場合、Ｒ_４は少なくとも１つは水酸基でなければならない。Ｚは−Ｒ_７−Ｓｉ（Ｒ_９）（Ｒ_１０）−Ｏ−Ｓｉ（Ｒ_９）（Ｒ_１０）−Ｒ_８−で表され、Ｒ_７〜Ｒ_１０は有機基である。）
［７］
さらにフェノール化合物（Ｃ）を含むものである［１］乃至［６］のいずれかに記載のポジ型感光性樹脂組成物。
［８］
アルカリ可溶性樹脂（Ａ）１００重量部に対して、フェノール化合物（Ｃ）を１〜３０重量部含むものである［７］に記載のポジ型感光性樹脂組成物。
［９］
［１］乃至［８］のいずれかに記載のポジ型感光性樹脂組成物の硬化物で構成されていることを特徴とする保護膜。
［１０］
［１］乃至［８］のいずれかに記載のポジ型感光性樹脂組成物の硬化物で構成されていることを特徴とする層間絶縁膜。
［１１］
半導体素子又は表示素子の表面保護膜である請求項９に記載の保護膜。
［１２］
［９］に記載の保護膜を有していることを特徴とする半導体装置。
［１３］
［９］に記載の保護膜を有していることを特徴とする表示素子。
［１４］
［１０］に記載の層間絶縁膜を有していることを特徴とする半導体装置。
［１５］
［１０］に記載の層間絶縁膜を有していることを特徴とする表示素子。 Such an object is achieved by the present invention described in the following [1] to [14].
[1]
It contains an alkali-soluble resin (A) and a naphthoquinonediazide sulfonic acid ester compound (B) of phenol represented by the general formula (1), and the hydroxyl group concentration of the phenol is 0.0060 mol / g or less. Positive photosensitive resin composition.

(In the formula, R ₁ is a divalent organic group. R ₂ and R ₃ are a hydrogen atom, a halogen atom, an alkyl group, a substituted alkyl group, a cycloalkyl group, a substituted cycloalkyl group, an aryl group, a substituted aryl group, An alkoxy group having 1 to 5 carbon atoms or an acyl group having 1 to 5 carbon atoms, which may be the same or different, each having an integer of a and b = 0 to _{3. When} there are a plurality of R ₂ and R ₃ Can be the same or different.)
[2]
R ₁ in the formula (1) is an alkylene group having 1 to 15 carbon atoms, a substituted alkylene group, a single bond, —O—, —SO ₂ —, —CO ₂ —, arylene, substituted arylene, or the following formula: The positive photosensitive resin composition according to [1], which is one type selected from (2).

[3]
The naphthoquinone diazide sulfonic acid ester compound (B) is a compound in which 60% or more of the hydroxyl group of the phenol represented by the formula (1) is esterified with naphthoquinone diazide sulfonic acid, either [1] or [2] The positive photosensitive resin composition described in 1.
[4]
Any one of [1] to [3] containing 1 to 50 parts by weight of the naphthoquinonediazide sulfonic acid ester compound (B) of phenol represented by the general formula (1) with respect to 100 parts by weight of the alkali-soluble resin (A) A positive photosensitive resin composition according to claim 1.
[5]
The alkali-soluble resin (A) is a resin containing a polybenzoxazole structure, a resin containing a polybenzoxazole precursor structure, a resin containing a polyimide structure, a resin containing a polyimide precursor structure, and a resin containing a polyamic acid ester structure. The positive photosensitive resin composition according to any one of [1] to [4], which contains at least one resin selected from the group consisting of:
[6]
The positive photosensitive resin composition according to any one of [1] to [5], wherein the alkali-soluble resin (A) is a polyamide resin represented by the formula (3).

(In the formula, X and Y are organic groups. C and d are mole percentages, c + d = 100, c is 60 or more and 100 or less, and d is 0 or more and 40 or less. R ₄ is a hydroxyl group or- _{O-R 6,} and may be the same or different .R ₅ is a hydroxyl group, a carboxyl _group, -O-R 6, are either _{-COO-R 6} may be the same or different .m is 0 2 is a positive number, n is a positive number from 0 to _4. R ₆ is an organic group having 1 to 15 carbon atoms, and when R ₄ has no hydroxyl group, at least one R ₅ is a carboxyl group. In addition, when there is no carboxyl group as R ₅ , at least one R ₄ must be a hydroxyl group, Z is —R ₇ —Si (R ₉ ) (R ₁₀ ) —O—Si (R _{9) (R 10) -R 8} - is represented _by, R 7 _{to R 10} is an organic radical That.)
[7]
The positive photosensitive resin composition according to any one of [1] to [6], further comprising a phenol compound (C).
[8]
The positive photosensitive resin composition according to [7], which contains 1 to 30 parts by weight of the phenol compound (C) with respect to 100 parts by weight of the alkali-soluble resin (A).
[9]
A protective film comprising a cured product of the positive photosensitive resin composition according to any one of [1] to [8].
[10]
An interlayer insulating film comprising a cured product of the positive photosensitive resin composition according to any one of [1] to [8].
[11]
The protective film according to claim 9, which is a surface protective film of a semiconductor element or a display element.
[12]
A semiconductor device comprising the protective film according to [9].
[13]
A display element comprising the protective film according to [9].
[14]
[10] A semiconductor device comprising the interlayer insulating film according to [10].
[15]
A display element comprising the interlayer insulating film according to [10].

  The present invention provides a positive photosensitive resin composition, a protective film, an interlayer insulating film, a semiconductor device, and a display element that have high sensitivity, high resolution, and high residual film ratio.

The positive photosensitive resin composition includes (A) an alkali-soluble resin and (B) a naphthoquinonediazide sulfonic acid ester compound of phenol having a specific structure with a hydroxyl group concentration of 0.0060 mol / g or less. . The protective film and the interlayer insulating film are made of a cured product of the positive photosensitive resin composition. Furthermore, the semiconductor device and the display element are formed of the protective film and the interlayer insulating film.
Hereinafter, each component of the positive photosensitive resin composition of the present invention will be described in detail. The following is an example, and the present invention is not limited to the following.

  Examples of the (A) alkali-soluble resin used in the present invention include acrylic resins such as cresol-type novolak resins, hydroxystyrene resins, methacrylic acid resins, and methacrylic ester resins, cyclic olefin resins containing hydroxyl groups, carboxyl groups, and polyamides. Based resins and the like. Among these, polyamide-based resins are preferable, and specifically, resins having at least one of a polybenzoxazole structure and a polyimide structure, and having a hydroxyl group, a carboxyl group, an ether group or an ester group in the main chain or side chain, polybenzox Examples thereof include a resin having an oxazole precursor structure, a resin having a polyimide precursor structure, and a resin having a polyamic acid ester structure. As such a polyamide-type resin, the polyamide-type resin shown by following formula (3) can be mentioned, for example.

（式中、Ｘ、Ｙは有機基である。ｃ、ｄはモルパーセントを示し、ｃ＋ｄ＝１００で、ｃが６０以上１００以下、ｄが０以上〜４０以下である。Ｒ_４は水酸基又は−Ｏ−Ｒ_６であり、同一でも異なっても良い。Ｒ_５は水酸基、カルボキシル基、−Ｏ−Ｒ_６、−ＣＯＯ−Ｒ_６のいずれかであり、同一でも異なっても良い。ｍは０〜２の正数、ｎは０〜４の正数である。Ｒ_６は炭素数１〜１５の有機基である。ここで、Ｒ_４として水酸基がない場合、Ｒ_５は少なくとも１つはカルボキシル基でなければならない。また、Ｒ_５としてカルボキシル基がない場合、Ｒ_４は少なくとも１つは水酸基でなければならない。Ｚは−Ｒ_７−Ｓｉ（Ｒ_９）（Ｒ_１０）−Ｏ−Ｓｉ（Ｒ_９）（Ｒ_１０）−Ｒ_８−で表され、Ｒ_７〜Ｒ_１０は有機基である。）

(In the formula, X and Y are organic groups. C and d are mole percentages, c + d = 100, c is 60 or more and 100 or less, and d is 0 or more and 40 or less. R ₄ is a hydroxyl group or- _{O-R 6,} and may be the same or different .R ₅ is a hydroxyl group, a carboxyl _group, -O-R 6, are either _{-COO-R 6} may be the same or different .m is 0 2 is a positive number, n is a positive number from 0 to _4. R ₆ is an organic group having 1 to 15 carbon atoms, and when R ₄ has no hydroxyl group, at least one R ₅ is a carboxyl group. In addition, when there is no carboxyl group as R ₅ , at least one R ₄ must be a hydroxyl group, Z is —R ₇ —Si (R ₉ ) (R ₁₀ ) —O—Si (R _{9) (R 10) -R 8} - is represented _by, R 7 _{to R 10} is an organic radical That.)

The polyamide resin containing the structure represented by the general formula (3) is, for example, a compound selected from diamine containing X or bis (aminophenol), 2,4-diaminophenol and the like, a tetracarboxylic acid anhydride containing Y, It is obtained by reacting with a compound selected from trimellitic anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like. In the case of dicarboxylic acid, an active ester type dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance may be used in order to increase the reaction yield or the like.

In the polyamide resin containing the structure represented by the general formula (3), _-O-R 6 as substituent _-O-R 6, Y as a substituent of X, _{-COO-R 6} represents a hydroxyl group, a carboxyl group Is a group protected with R ₆ which is an organic group having 1 to 15 carbon atoms for the purpose of adjusting the solubility in an aqueous alkali solution, and a hydroxyl group and a carboxyl group may be protected if necessary. Examples of R ₆ include formyl, methyl, ethyl, propyl, isopropyl, tertiary butyl, tertiary butoxycarbonyl, phenyl, benzyl, tetrahydrofuranyl, tetrahydropyranyl and the like. It is done.

  When this polyamide resin is heated, dehydration ring closure occurs, and a heat resistant resin is obtained in the form of polyimide resin, polybenzoxazole resin, or copolymerization of both.

Examples of X in the general formula (3) include those represented by the following formula.

（式中Ａは、−ＣＨ_２−、−Ｃ（ＣＨ_３）_２−、−Ｏ−、−Ｓ−、−ＳＯ_２−、−ＣＯ−、−ＮＨＣＯ−、−Ｃ（ＣＦ_３）_２−、又は単結合である。Ｒ_１１はアルキル基、アルキルエステル基、ハロゲン原子の内から選ばれた１つを表し、それぞれ同じでも異なってい
てもよい。ｒ＝０〜２の正数である。また、Ｒ_１２は水素原子、アルキル基、アルキルエステル基、ハロゲン原子から選ばれた１つを表す。）

(In the formula, A represents —CH ₂ —, —C (CH ₃ ) ₂ —, —O—, —S—, —SO ₂ —, —CO—, —NHCO—, —C (CF ₃ ) ₂ —, R ₁₁ represents one selected from an alkyl group, an alkyl ester group, and a halogen atom, which may be the same or different, and is a positive number of r = 0 to 2. R ₁₂ represents one selected from a hydrogen atom, an alkyl group, an alkyl ester group, and a halogen atom.)

  Among these, particularly preferred are those represented by the following formula. These may be used alone or in combination of two or more.

（式中Ｒ_１１はアルキル基、アルキルエステル基、ハロゲン原子の内から選ばれた１つを表し、それぞれ同じでも異なっていてもよい。ｒ＝０〜２の正数である。）

(In the formula, R ₁₁ represents one selected from an alkyl group, an alkyl ester group, and a halogen atom, which may be the same or different, and is a positive number of r = 0 to 2.)

  Moreover, as Y of General formula (3), what is represented by a following formula is mentioned, for example.

(式中Ａ：−ＣＨ_２−、−Ｃ（ＣＨ_３）_２−、−Ｏ−、−Ｓ−、−ＳＯ_２−、−ＣＯ−、
−ＮＨＣＯ−、−Ｃ（ＣＦ_３）_２−、又は単結合である。Ｒ_１２はアルキル基、アルキルエステル基、ハロゲン原子の内から選ばれた１つを表し、それぞれ同じでも異なっていてもよい。ｒ＝０〜２の正数である。)

(In the formula, A: —CH ₂ —, —C (CH ₃ ) ₂ —, —O—, —S—, —SO ₂ —, —CO—,
—NHCO—, —C (CF ₃ ) ₂ —, or a single bond. R ₁₂ represents one selected from an alkyl group, an alkyl ester group, and a halogen atom, and may be the same or different. r is a positive number from 0 to 2. )

  Among these, particularly preferred are those represented by the following formula. These may be used alone or in combination of two or more.

（Ｒ_１３はアルキル基、アルキルエステル基、ハロゲン原子の内から選ばれた１つを表し、それぞれ同じでも異なっていてもよい。ｒ＝０〜２の正数である。）

(R ₁₃ represents one selected from an alkyl group, an alkyl ester group, and a halogen atom, and may be the same or different. R = 0 to a positive number of 2)

  In the general formula (3), b, which is a mole percent of repeating units including Z and Y, may be zero.

In the present invention, it is desirable to seal the end from the viewpoint of storage stability. For sealing, a derivative having an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group can be introduced as an acid derivative or an amine derivative at the end of the polyamide represented by the general formula (3).
Specifically, for example, a compound selected from diamine or bis (aminophenol) having a structure of X, 2,4-diaminophenol, and the like, and a tetracarboxylic acid anhydride, trimellitic acid anhydride, dicarboxylic acid having a structure of Y After synthesizing a polyamide resin having a structure represented by the general formula (3) obtained by reacting with a compound selected from acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative, etc. It is preferable to cap the terminal amino group contained in the polyamide resin as an amide using an acid anhydride or acid derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group.
Examples of the end-capping functional group include those represented by the following formula.

  Among these, a functional group represented by the following formula is particularly preferable. These may be used alone or in combination of two or more. The method is not limited to this method, and the terminal acid contained in the polyamide resin is capped as an amide using an amine derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group. You can also

The naphthoquinone diazide sulfonic acid ester compound of phenol having a specific structure (B) having a hydroxyl group concentration of 0.0060 mol / g or less used in the present invention is specifically represented by the general formula (1), and the hydroxyl group concentration is It is a 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound and / or a 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound of phenol which is 0.0060 mol / g or less. It is a photosensitizer.
Conventional photosensitizers are phenol naphthoquinonediazide sulfonate compounds having at least two aromatic rings as described in Patent Document 2 and having a structure having a total of three or more phenolic hydroxyl groups in each aromatic ring. Furthermore, the hydroxyl group concentration of the phenol was 0.0093 mol / g to 0.0123 mol / g, but these had little effect on the compatibility of sensitivity and resolution.
On the other hand, in the present invention, as shown in the structure of the general formula (1) shown below, the terminal has two aromatic rings, each aromatic ring has only one hydroxyl group, and the hydroxyl group concentration is By using phenol that is 0.0060 mol / g or less, both sensitivity and resolution can be achieved. The reason for this is considered to be that the number of hydroxyl groups of phenol does not become larger than the number of aromatic rings and that the concentration of hydroxyl groups of phenol is lower than that of phenol described in Patent Document 2. When the hydroxyl group concentration is 0.0060 mol / g or less, not only the sensitivity is improved, but also high resolution and a high residual film ratio are obtained. Preferably, the hydroxyl group concentration of phenol is 0.0050 mol / g or less, more preferably the hydroxyl group concentration of phenol is 0.0045 mol / g or less. The hydroxyl group concentration can be calculated by dividing the number of hydroxyl groups by the molecular weight of the phenol compound.

（式中、Ｒ_１は２価の有機基である。Ｒ_２、Ｒ_３は水素原子、ハロゲン原子、アルキル基、置換アルキル基、シクロアルキル基、置換シクロアルキル基、アリール基、置換アリール基、炭素数１〜５のアルコキシ基、または炭素数１〜５アシル基であり、それぞれ同じでも異なっていても良い。ａ，ｂ＝０〜３の整数である。Ｒ_２、Ｒ_３が複数ある場合は、それぞれ同じでも異なっていても良い。）

(In the formula, R ₁ is a divalent organic group. R ₂ and R ₃ are a hydrogen atom, a halogen atom, an alkyl group, a substituted alkyl group, a cycloalkyl group, a substituted cycloalkyl group, an aryl group, a substituted aryl group, An alkoxy group having 1 to 5 carbon atoms or an acyl group having 1 to 5 carbon atoms, which may be the same or different, each having an integer of a and b = 0 to _{3. When} there are a plurality of R ₂ and R ₃ Can be the same or different.)

R ₁ in the general formula (1) is an alkylene group having 1 to 15 carbon atoms, a substituted alkylene group, a single bond, —O—, —SO ₂ —, —CO ₂ —, arylene, substituted arylene, or the following formula: Selected from (2).

Specific examples of the structure represented by the general formula (1) when R ₂ and R ₃ are 0 or 1 include those represented by the following formula. These may be used alone or in combination of two or more.

A specific example of the structure represented by the general formula (1) and having a plurality of R ₂ and R _{3 includes the following} formula. These may be used alone or in combination of two or more.

  In the naphthoquinone diazide sulfonic acid ester compound of phenol (B) having a specific structure used in the present invention, it is important that 60% or more of the hydroxyl group of the phenol is esterified with naphthoquinone diazide sulfonic acid. More preferably, it is 70% or more. If it is 60% or more, the unexposed area is sufficiently resistant to the alkaline aqueous solution and not only becomes high resolution, but also has excellent exposed area solubility, thereby improving the sensitivity.

  The addition amount of the photosensitizing agent which is a naphthoquinonediazide sulfonic acid ester compound of phenol (B) having a specific structure used in the present invention is preferably 1 to 50 parts by weight with respect to 100 parts by weight of the alkali-soluble resin. More preferably, it is 10 to 40 parts by weight. If it is at least the lower limit value, the unexposed portion is resistant to the aqueous alkali solution, so that the patterning property is good, the high residual film rate and the high resolution are maintained, and the sensitivity is improved. Below the upper limit, not only scum but also the decrease in transparency in the film due to the photosensitizer itself is moderately suppressed, so high sensitivity and high resolution are maintained, and film thickness shrinkage due to decomposition components during curing is suppressed. And a high residual film rate even after curing.

  In addition, the positive type photosensitive resin composition of the present invention can be used in combination with other naphthoquinonediazide sulfonic acid ester compounds as shown below to the extent that sensitivity and resolution are not affected.

式中Ｑは、水素原子、式（５）、式（６）のいずれかから選ばれるものである。ここで各化合物のＱのうち、少なくとも１つは式（５）、式（６）である。

In the formula, Q is selected from a hydrogen atom, formula (5), and formula (6). Here, at least one of Q of each compound is represented by formula (5) or formula (6).

  Furthermore, in the present invention, (C) a phenolic compound can be used in combination so that patterning can be performed with high sensitivity and without scum. Specific examples of the structure include the following, but are not limited thereto.

Among these, those represented by the following formula are preferable. These may be used alone or in combination of two or more.

  (C) It is preferable that the addition amount of a phenol compound is 1-30 weight part with respect to 100 weight part of (A) alkali-soluble resin, More preferably, it is 1-25 weight part. When the amount is 1 part by weight or more, the occurrence of scum is suppressed during development, and the sensitivity is improved by promoting the solubility of the exposed part. When the amount is less than the upper limit, the remaining film rate, the resolution decreases, and precipitation occurs during freezing storage. It is preferable.

The resin composition and the positive photosensitive resin composition in the present invention may contain additives such as a leveling agent and a silane coupling agent as necessary.

In the present invention, these components are dissolved in a solvent and used in the form of a varnish. Solvents include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropio And the like, and may be used alone or in combination.

  In the method of using the positive photosensitive resin composition of the present invention, first, the composition is applied to a suitable support such as a silicon wafer, a ceramic substrate, an aluminum substrate and the like. When applied on a semiconductor element, the applied amount is applied so that the final film thickness after curing is 0.1 to 30 μm. If the film thickness is below the lower limit value, it will be difficult to fully function as a protective surface film of the semiconductor element. If the film thickness exceeds the upper limit value, it will be difficult to obtain a fine processing pattern. Takes a long time to reduce throughput. Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, and the like. Next, after prebaking at 60 to 130 ° C. to dry the coating film, actinic radiation is applied to the desired pattern shape. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable.

  Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. Developers include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, and di-n. Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium such as tetramethylammonium hydroxide and tetraethylammonium hydroxide An aqueous solution of an alkali such as a salt and an aqueous solution to which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added can be preferably used. As a developing method, methods such as spraying, paddle, dipping, and ultrasonic waves are possible.

  Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinse liquid. Next, heat treatment is performed to form an oxazole ring and / or an imide ring, thereby obtaining a final pattern rich in heat resistance.

  The positive photosensitive resin composition according to the present invention is used not only for semiconductor applications, but also as interlayer insulation for multilayer circuits, cover coats for flexible copper-clad plates, solder resist films and liquid crystal alignment films, and interlayer insulation films for elements in display devices. Is also useful.

  Examples of semiconductor device applications include a passivation film obtained by forming the above-described positive photosensitive resin composition film on a semiconductor element, and a positive photosensitive resin composition described above on a passivation film formed on a semiconductor element. Examples thereof include a buffer coat film formed by forming a physical film, and an interlayer insulating film formed by forming the above-described positive photosensitive resin composition film on a circuit formed on a semiconductor element.

Examples of display device applications include TFT interlayer insulating films, TFT element flattening films, color filter flattening films, protrusions for MVA liquid crystal display devices, and cathode barriers for organic EL elements. The usage method is based on forming the positive type photosensitive resin composition layer patterned on the substrate on which the display element and the color filter are formed in accordance with the above-described method. High transparency is required for display device applications, especially interlayer insulation films and planarization films, but by introducing a post-exposure process before curing this positive photosensitive resin composition layer, transparency It is also possible to obtain a resin layer that is excellent in practical use, which is more preferable in practical use.
<Example>

Hereinafter, the present invention will be described specifically by way of examples.
<Example 1>
Synthesis of polyamide resin 139.60 g (0.450 mol) of 4,4′-oxydiphthalic anhydride, 66.71 g (0.900 mol) of 2-methyl-2-propanol and 88.9 g (1.125 mol) of pyridine Were placed in a four-necked separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, and 1030 g of N-methyl-2-pyrrolidone was added and dissolved. To this reaction solution, 121.62 g (0.900 mol) of 1-hydroxy-1,2,3-benzotriazole was dropped together with 400 g of N-methyl-2-pyrrolidone, and then 185.70 g (0.900 mol) of dicyclohexylcarbodiimide. Was added dropwise together with 400 g of N-methyl-2-pyrrolidone and allowed to react overnight at room temperature. Thereafter, 221.61 g of a dicarboxylic acid derivative (active ester) obtained by reacting 1 mol of diphenyl ether-4,4′-dicarboxylic acid and 2 mol of 1-hydroxy-1,2,3-benzotriazole with this reaction solution. (0.450 mol) and 366.26 g (1.000 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane together with 1550 g of N-methyl-2-pyrrolidone are added at room temperature. Stir for 2 hours. Thereafter, the mixture was stirred at 75 ° C. for 12 hours using an oil bath.
Next, 16.42 g (0.100 mol) of 5-norbornene-2,3-dicarboxylic anhydride dissolved in 75 g of N-methyl-2-pyrrolidone was added, and the mixture was further stirred for 12 hours to complete the reaction. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, and then dried under vacuum to obtain the general formula (1) Wherein X is the formula X-1, Y is a mixture of the formula Y-1 and the formula Y-2, and a = 100, b = 0, n =
The objective polyamide resin formula (A-1) consisting of 17 was obtained.

Synthesis of naphthoquinonediazide sulfonic acid ester compound 48.27 g (0.100 mol) of phenol formula (B-1) and 13.56 g (0.134 mol) of triethylamine were thermometer, stirrer, raw material inlet, dry nitrogen gas Into a four-necked separable flask equipped with an introduction tube, 103 g of tetrahydrofuran was added and dissolved. After cooling this reaction solution to 10 ° C. or less, 36.00 g (0.134 mol) of 1,2-naphthoquinone-2-diazide-4-sulfonyl chloride was gradually added dropwise with 80 g of tetrahydrofuran so as not to exceed 10 ° C. . Thereafter, the mixture was stirred at 10 ° C. or lower for 5 minutes and then stirred at room temperature for 5 hours to complete the reaction. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, dried under vacuum, and the formula (Q-1 The naphthoquinone diazide sulfonic acid ester compound represented by the structure

Preparation of positive photosensitive resin composition 100 g of synthesized polyamide resin formula (A-1), 22 g of naphthoquinone diazide sulfonate compound having the structure of formula (Q-1), phenol having the structure of formula (C-1) 12 g of the compound was dissolved in 200 g of N-methyl-2-pyrrolidone, and then filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition.

Characteristic Evaluation This positive photosensitive resin composition was applied onto a silicon wafer using a spin coater and then pre-baked at 120 ° C. for 4 minutes on a hot plate to obtain a coating film having a thickness of about 10.0 μm. Through this coating film, a mask made by Toppan Printing Co., Ltd. (test chart No. 1: a remaining pattern and a blanking pattern with a width of 0.88 to 50 μm are drawn), and an i-line stepper (Nikon Corporation 4425i) ) And changed the exposure amount.
Next, the exposed portion was dissolved and removed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 80 seconds, and then rinsed with pure water for 10 seconds. As a result, the exposure amount 250
It was confirmed that the pattern was formed from the portion irradiated with mJ / cm ² . (Sensitivity is 250 mJ / cm ² ). Film thickness after development is 9.1μm (residual film ratio is 91%), resolution is 3μm
And showed a very high value.

<Example 2>
Synthesis of polyamide resin Dicarboxylic acid derivative (active ester) 368 obtained by reacting 0.828 mol of terephthalic acid, 0.092 mol of isophthalic acid and 1.840 mol of 1-hydroxy-1,2,3-benzotriazole .33 g (0.920 mol) and 366.26 g (1.000 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane were added to a thermometer, a stirrer, a raw material charging port, and dry nitrogen. Into a four-necked separable flask equipped with a gas introduction tube, 2940 g of N-methyl-2-pyrrolidone was added and dissolved. Thereafter, the mixture was reacted at 75 ° C. for 12 hours using an oil bath.
Next, 13.13 g (0.080 mol) of 5-norbornene-2,3-dicarboxylic anhydride dissolved in 40 g of N-methyl-2-pyrrolidone was added, and the mixture was further stirred for 12 hours to complete the reaction. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, and then dried under vacuum to obtain the general formula (1) X is a mixture of the following formula X-1, Y is a mixture of formula Y-3 and formula Y-4, and a = 100, b = 0, n
The objective polyamide resin formula (A-2) consisting of = 25 was obtained.
In the synthesis of the naphthoquinone diazide sulfonic acid ester compound in Example 1, the formula (B-2) is used in place of the phenol formula (B-1), and the naphthoquinone diazide sulfone similarly represented by the structure of the formula (Q-2) is used. An acid ester compound was obtained.
100 g of the synthesized polyamide resin formula (A-2), 24 g of a naphthoquinone diazide sulfonic acid ester compound having the structure of formula (Q-2), and 9 g of a phenol compound having the structure of formula (C-2) were added to N-methyl-2- After dissolving in 200 g of pyrrolidone, it was filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition. The other evaluations were the same as in Example 1.

<Example 3>
In the synthesis of the polyamide resin in Example 2, in place of 0.828 mol of terephthalic acid and 0.092 mol of isophthalic acid, 0.900 mol of diphenyl ether-4,4′-dicarboxylic acid was used in the same manner as in Example 2. The polyamide resin formula (A-3) represented by the general formula (1), wherein X is the formula X-1, Y is the formula Y-2, and a = 100, b = 0, and n = 20 is obtained. Synthesized.
In the synthesis of the naphthoquinone diazide sulfonic acid ester compound in Example 1, the formula (B-3) is used in place of the phenol formula (B-1), and the naphthoquinone diazide sulfone similarly represented by the structure of the formula (Q-3) is used. An acid ester compound was obtained.
100 g of synthesized polyamide resin formula (A-3), 22 g of naphthoquinone diazide sulfonate compound having the structure of formula (Q-3), 5 g of phenol compound having the structures of formula (C-1) and formula (C-3) And 4 g were dissolved in 200 g of N-methyl-2-pyrrolidone, and then filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition. The other evaluations were the same as in Example 1.

<Example 4>
In the synthesis of the polyamide resin in Example 3, the number of moles of diphenyl ether-4,4′-dicarboxylic acid was changed to 0.880 mole, and hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane was changed. Is reduced to 347.95 g (0.950 mol), and 12.43 g (0.050 mol) of 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane is used instead. In the same manner as in Example 3, the reaction is represented by the general formula (1), X is a mixture of the formula X-1, Y is a mixture of the formulas Y-1 and Y-2, Z is the formula Z-1, and a
= 95, b = 5, and n = 17 were synthesized as a polyamide resin (A-4).
In the synthesis of the naphthoquinone diazide sulfonic acid ester compound in Example 1, the formula (B-4) is used in place of the phenol formula (B-1), and the naphthoquinone diazide sulfone similarly represented by the structure of the formula (Q-4) is used. An acid ester compound was obtained.
100 g of synthesized polyamide resin formula (A-4), 20 g of naphthoquinone diazide sulfonate compound having the structure of formula (Q-4), 7 g of phenol compound having the structures of formula (C-1) and formula (C-3) And 4 g were dissolved in 200 g of N-methyl-2-pyrrolidone, and then filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition. The other evaluations were the same as in Example 1.

<Example 5>
In the synthesis of the polyamide resin in Example 3, the number of moles of diphenyl ether-4,4′-dicarboxylic acid was changed to 0.890 mole, and hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) was further changed. The number of moles of propane was changed to 0.500 mole, and instead of 0.500 mole of 2,2-bis (3-amino-4-hydroxyphenyl) propane, 5-norbornene-2,3-dicarboxylic acid anhydride was used. Instead of 0.110 mol of 4-ethynylphthalic anhydride, the reaction was carried out in the same manner as in Example 3 and represented by the general formula (1), where X is a mixture of the formula X-1 and the formula X-2 , Y is the formula Y-2, and a polyamide resin formula (A-5) composed of a = 100, b = 0, and n = 19 was synthesized.
In the synthesis of the naphthoquinone diazide sulfonic acid ester compound in Example 1, the formula (B-5) is used in place of the phenol formula (B-1), and the naphthoquinone diazide sulfone similarly represented by the structure of the formula (Q-5) is used. An acid ester compound was obtained.
100 g of synthesized polyamide resin formula (A-5), 22 g of naphthoquinone diazide sulfonate compound having the structure of formula (Q-5), 5 g of phenol compound having the structures of formula (C-1) and formula (C-3) And 4 g were dissolved in 200 g of N-methyl-2-pyrrolidone, and then filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition. The other evaluations were the same as in Example 1.

<Example 6>
In the synthesis of the naphthoquinone diazide sulfonic acid ester compound in Example 1, the formula (B-6) is used instead of the phenol formula (B-1), and the naphthoquinone diazide sulfone represented by the structure of the formula (Q-6) is similarly used. An acid ester compound was obtained.
In preparation of the positive photosensitive resin composition in Example 3, 20 g of naphthoquinone diazide sulfonic acid ester compound having the structure of the formula (Q-6) instead of the formula (Q-3), the formula (C-1) and Evaluation similar to Example 1 was performed except having changed the addition amount of the phenolic compound which has a structure of Formula (C-3) into 7g and 4g.

<Example 7>
In Example 1, the same evaluation as Example 1 was performed except that the amount of the phenol compound formula (C-1) added was 0 g.

Comparative Examples 1-5
A positive photosensitive resin composition was prepared in the same manner as in Example 1 at the blending ratio in Table 1, and evaluated in the same manner as in Example 1.
The structures of X-1, X-2, Y-1 to Y-4, Z-1, Q-1 to Q-10, and C-1 to C-3 of Examples and Comparative Examples are shown below.

  The positive photosensitive resin composition of the present invention has characteristics of high sensitivity, high resolution, and high residual film ratio, and is suitably used for a semiconductor element, a surface protective film of a display element, an interlayer insulating film, and the like.

Claims (13)

At least one resin selected from a resin containing a polybenzoxazole structure, a resin containing a polybenzoxazole precursor structure, a resin containing a polyimide structure, a resin containing a polyimide precursor structure, and a resin containing a polyamic acid ester structure And a naphthoquinone diazide sulfonic acid ester compound of phenol represented by the general formula (1) ( excluding the naphthoquinone diazide sulfonic acid ester compound of the following phenol compound (BP-1)) When comprise phenol compound (C), and a, and wherein the hydroxyl group concentration of the phenol is not more than 0.00 50 mol / g, the interlayer insulating film, a protective film forming the positive photosensitive resin composition.

(Wherein R ₁ is an alkylene group having 1 to 15 carbon atoms, a substituted alkylene group, a single bond, —O—, —SO ₂ —, —CO ₂ —, arylene, substituted arylene, or the following formula (2): R ₂ and R ₃ are hydrogen atoms, halogen atoms, alkyl groups, substituted alkyl groups, cycloalkyl groups, substituted cycloalkyl groups, aryl groups, substituted aryl groups, and alkoxy groups having 1 to 5 carbon atoms. Or an acyl group having 1 to 5 carbon atoms, which may be the same or different, each having an integer of a, b = 0 to _{3. When} there are a plurality of R ₂ and R ₃ , they may be the same or different. Is also good.)

The naphthoquinonediazide sulfonic acid ester compound (B), the interlayer insulation according to claim 1 wherein the formula (1) in more than 60% of the phenolic hydroxyl groups represented is shall be esterified with a naphthoquinone diazide sulfonic acid A positive photosensitive resin composition for forming a film or a protective film.   The interlayer according to claim 1 or 2, comprising 1 to 50 parts by weight of a phenol naphthoquinonediazide sulfonic acid ester compound (B) represented by the general formula (1) with respect to 100 parts by weight of the alkali-soluble resin (A). A positive photosensitive resin composition for forming an insulating film and a protective film. The positive-type photosensitive resin composition for forming an interlayer insulating film and protective film according to any one of claims 1 to 3, wherein the alkali-soluble resin (A) is a polyamide resin represented by the formula (3). .

(In the formula, X and Y are organic groups. C and d are mole percentages, c + d = 100, c is 60 or more and 100 or less, and d is 0 or more and 40 or less. R ₄ is a hydroxyl group or- _{O-R 6,} and may be the same or different .R ₅ is a hydroxyl group, a carboxyl _group, -O-R 6, are either _{-COO-R 6} may be the same or different .m is 0 2 is a positive number, n is a positive number from 0 to _4. R ₆ is an organic group having 1 to 15 carbon atoms, and when R ₄ has no hydroxyl group, at least one R ₅ is a carboxyl group. In addition, when there is no carboxyl group as R ₅ , at least one R ₄ must be a hydroxyl group, Z is —R ₇ —Si (R ₉ ) (R ₁₀ ) —O—Si (R _{9) (R 10) -R 8} - is represented _by, R 7 _{to R 10} is an organic radical That.) Per 100 parts by weight of the alkali-soluble resin (A), the interlayer insulating film according to any one of claims 1 to 4 phenolic compound (C) is intended to include 1 to 30 parts by weight, for forming a protective film positive photosensitive resin Composition. Hydroxyl group concentration of phenol Formula naphthoquinonediazide sulfonic acid ester compound of phenol represented by (1) (B) is any of claims 1 to 5 or less 0.0037 mol / g or more 0.00 50 mol / g 2. A positive-type photosensitive resin composition for forming an interlayer insulating film or protective film according to claim 1. A protective film comprising a cured product of the positive photosensitive resin composition for forming a protective film according to any one of claims 1 to 6 . An interlayer insulating film comprising a cured product of the positive photosensitive resin composition for forming an interlayer insulating film according to any one of claims 1 to 6 . The protective film according to claim 7 , which is a surface protective film of a semiconductor element or a display element. A semiconductor device comprising the protective film according to claim 7 . A display element comprising the protective film according to claim 7 . A semiconductor device comprising the interlayer insulating film according to claim 8 . A display element comprising the interlayer insulating film according to claim 8 .