JP4514871B2 - 半導体装置および電子機器 - Google Patents

半導体装置および電子機器 Download PDF

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Publication number
JP4514871B2
JP4514871B2 JP2000015372A JP2000015372A JP4514871B2 JP 4514871 B2 JP4514871 B2 JP 4514871B2 JP 2000015372 A JP2000015372 A JP 2000015372A JP 2000015372 A JP2000015372 A JP 2000015372A JP 4514871 B2 JP4514871 B2 JP 4514871B2
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Japan
Prior art keywords
film
insulating film
tft
dielectric
capacitor electrode
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Expired - Fee Related
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JP2000015372A
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English (en)
Japanese (ja)
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JP2000284722A5 (enExample
JP2000284722A (ja
Inventor
舜平 山崎
隆之 池田
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000015372A priority Critical patent/JP4514871B2/ja
Publication of JP2000284722A publication Critical patent/JP2000284722A/ja
Publication of JP2000284722A5 publication Critical patent/JP2000284722A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2000015372A 1999-01-29 2000-01-25 半導体装置および電子機器 Expired - Fee Related JP4514871B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000015372A JP4514871B2 (ja) 1999-01-29 2000-01-25 半導体装置および電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2229899 1999-01-29
JP11-22298 1999-01-29
JP2000015372A JP4514871B2 (ja) 1999-01-29 2000-01-25 半導体装置および電子機器

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JP2000284722A JP2000284722A (ja) 2000-10-13
JP2000284722A5 JP2000284722A5 (enExample) 2007-03-15
JP4514871B2 true JP4514871B2 (ja) 2010-07-28

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JP2000015372A Expired - Fee Related JP4514871B2 (ja) 1999-01-29 2000-01-25 半導体装置および電子機器

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190189725A1 (en) * 2016-09-07 2019-06-20 Sony Semiconductor Solutions Corporation Display device and electronic device

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1394320A (zh) * 2000-10-27 2003-01-29 松下电器产业株式会社 显示器件
JP4137454B2 (ja) * 2001-01-17 2008-08-20 株式会社半導体エネルギー研究所 発光装置、電子機器及び発光装置の作製方法
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7483001B2 (en) 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
KR100892945B1 (ko) * 2002-02-22 2009-04-09 삼성전자주식회사 액티브 매트릭스형 유기전계발광 표시장치 및 그 제조방법
TWI269248B (en) * 2002-05-13 2006-12-21 Semiconductor Energy Lab Display device
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4493933B2 (ja) * 2002-05-17 2010-06-30 株式会社半導体エネルギー研究所 表示装置
CN100449779C (zh) 2002-10-07 2009-01-07 株式会社半导体能源研究所 半导体器件及其制造方法
JP4175877B2 (ja) * 2002-11-29 2008-11-05 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7902747B2 (en) * 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
KR20060044032A (ko) 2004-11-11 2006-05-16 삼성전자주식회사 표시패널용 검사 장치 및 이의 검사 방법
US7554619B2 (en) * 2005-12-05 2009-06-30 Tpo Displays Corp. Stacked storage capacitor structure for a LTPS TFT-LCD
WO2009057444A1 (ja) * 2007-11-02 2009-05-07 Sharp Kabushiki Kaisha 回路基板及び表示装置
WO2009123127A1 (ja) * 2008-04-02 2009-10-08 Ｎｅｃ液晶テクノロジー株式会社 半導体装置及びその製造方法、並びに液晶表示装置及び電子機器
JP5423548B2 (ja) * 2010-04-05 2014-02-19 セイコーエプソン株式会社 電気光学装置及び電子機器
US8766361B2 (en) 2010-12-16 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP5909919B2 (ja) 2011-08-17 2016-04-27 セイコーエプソン株式会社 電気光学装置及び電子機器
US9818765B2 (en) 2013-08-26 2017-11-14 Apple Inc. Displays with silicon and semiconducting oxide thin-film transistors
US9543370B2 (en) * 2014-09-24 2017-01-10 Apple Inc. Silicon and semiconducting oxide thin-film transistor displays
US9818344B2 (en) 2015-12-04 2017-11-14 Apple Inc. Display with light-emitting diodes
EP3432297B1 (en) 2016-09-09 2023-05-03 Sony Semiconductor Solutions Corporation Display device and electronic device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2536766B2 (ja) * 1987-08-11 1996-09-18 旭硝子株式会社 アクティブマトリックス型表示素子
JPH0244317A (ja) * 1988-08-05 1990-02-14 Hitachi Ltd 補助容量を有する液晶表示装置
JPH04333828A (ja) * 1991-05-09 1992-11-20 Sony Corp 液晶表示装置
JP3106566B2 (ja) * 1991-07-26 2000-11-06 ソニー株式会社 液晶表示装置および製造方法
JP3043870B2 (ja) * 1991-11-21 2000-05-22 株式会社東芝 液晶表示装置
JP3098345B2 (ja) * 1992-12-28 2000-10-16 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
JP3312083B2 (ja) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
JP2797972B2 (ja) * 1994-06-28 1998-09-17 日本電気株式会社 アクティブマトリクス型液晶表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190189725A1 (en) * 2016-09-07 2019-06-20 Sony Semiconductor Solutions Corporation Display device and electronic device

Also Published As

Publication number Publication date
JP2000284722A (ja) 2000-10-13

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