JP4511148B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4511148B2 JP4511148B2 JP2003350431A JP2003350431A JP4511148B2 JP 4511148 B2 JP4511148 B2 JP 4511148B2 JP 2003350431 A JP2003350431 A JP 2003350431A JP 2003350431 A JP2003350431 A JP 2003350431A JP 4511148 B2 JP4511148 B2 JP 4511148B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- pad electrode
- via hole
- manufacturing
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003350431A JP4511148B2 (ja) | 2002-10-11 | 2003-10-09 | 半導体装置の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002298888 | 2002-10-11 | ||
JP2002298890 | 2002-10-11 | ||
JP2002298889 | 2002-10-11 | ||
JP2003350431A JP4511148B2 (ja) | 2002-10-11 | 2003-10-09 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004153260A JP2004153260A (ja) | 2004-05-27 |
JP2004153260A5 JP2004153260A5 (enrdf_load_stackoverflow) | 2006-11-16 |
JP4511148B2 true JP4511148B2 (ja) | 2010-07-28 |
Family
ID=32475624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003350431A Expired - Fee Related JP4511148B2 (ja) | 2002-10-11 | 2003-10-09 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4511148B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005235860A (ja) | 2004-02-17 | 2005-09-02 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP4376715B2 (ja) * | 2004-07-16 | 2009-12-02 | 三洋電機株式会社 | 半導体装置の製造方法 |
KR20060087273A (ko) | 2005-01-28 | 2006-08-02 | 삼성전기주식회사 | 반도체 패키지및 그 제조방법 |
KR100616670B1 (ko) | 2005-02-01 | 2006-08-28 | 삼성전기주식회사 | 웨이퍼 레벨의 이미지 센서 모듈 및 그 제조방법 |
JP5361156B2 (ja) * | 2007-08-06 | 2013-12-04 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
JP5258735B2 (ja) * | 2009-11-13 | 2013-08-07 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
US8384225B2 (en) * | 2010-11-12 | 2013-02-26 | Xilinx, Inc. | Through silicon via with improved reliability |
JP5876893B2 (ja) * | 2014-04-02 | 2016-03-02 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
CN110931460B (zh) * | 2019-12-30 | 2024-12-27 | 江阴长电先进封装有限公司 | 一种芯片的封装结构及其封装方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3713418B2 (ja) * | 2000-05-30 | 2005-11-09 | 光正 小柳 | 3次元画像処理装置の製造方法 |
JP2001351997A (ja) * | 2000-06-09 | 2001-12-21 | Canon Inc | 受光センサーの実装構造体およびその使用方法 |
JP2002094082A (ja) * | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
-
2003
- 2003-10-09 JP JP2003350431A patent/JP4511148B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004153260A (ja) | 2004-05-27 |
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