JP4509781B2 - 注入装置のリボン形状イオンビームの特性制御 - Google Patents

注入装置のリボン形状イオンビームの特性制御 Download PDF

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Publication number
JP4509781B2
JP4509781B2 JP2004521941A JP2004521941A JP4509781B2 JP 4509781 B2 JP4509781 B2 JP 4509781B2 JP 2004521941 A JP2004521941 A JP 2004521941A JP 2004521941 A JP2004521941 A JP 2004521941A JP 4509781 B2 JP4509781 B2 JP 4509781B2
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core member
focusing coil
coil unit
focusing
magnetic core
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Expired - Lifetime
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Japanese (ja)
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JP2005533353A5 (https=
JP2005533353A (ja
Inventor
ケネス， エイチ． パーサー，
ハロルド， エイ． エンゲ，
ノーマン， エル． ターナー，
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バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/315—Electron-beam or ion-beam tubes for localised treatment of objects for welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/141—Coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
JP2004521941A 2002-07-17 2003-07-17 注入装置のリボン形状イオンビームの特性制御 Expired - Lifetime JP4509781B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39632202P 2002-07-17 2002-07-17
PCT/US2003/022311 WO2004008476A1 (en) 2002-07-17 2003-07-17 Controlling the characteristics of ribbon-shaped implanter ion-beams

Publications (3)

Publication Number Publication Date
JP2005533353A JP2005533353A (ja) 2005-11-04
JP2005533353A5 JP2005533353A5 (https=) 2008-04-24
JP4509781B2 true JP4509781B2 (ja) 2010-07-21

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ID=30116011

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JP2004521941A Expired - Lifetime JP4509781B2 (ja) 2002-07-17 2003-07-17 注入装置のリボン形状イオンビームの特性制御

Country Status (6)

Country Link
US (5) US6933507B2 (https=)
EP (1) EP1532650A1 (https=)
JP (1) JP4509781B2 (https=)
KR (1) KR100926398B1 (https=)
AU (1) AU2003251973A1 (https=)
WO (1) WO2004008476A1 (https=)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
US20060043316A1 (en) * 2003-06-10 2006-03-02 Varian Semiconductor Equipment Associates, Inc. Ion implanter having enhanced low energy ion beam transport
US7105839B2 (en) * 2003-10-15 2006-09-12 White Nicholas R Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
WO2006060378A2 (en) * 2004-11-30 2006-06-08 Purser Kenneth H Broad energy-range ribbon ion beam collimation using a variable-gradient dipole
US20060124155A1 (en) * 2004-12-13 2006-06-15 Suuronen David E Technique for reducing backside particles
US7525103B2 (en) * 2006-01-20 2009-04-28 Varian Semiconductor Equipment Associates, Inc. Technique for improving uniformity of a ribbon beam
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7584890B2 (en) 2006-06-23 2009-09-08 Global Payment Technologies, Inc. Validator linear array
US7619228B2 (en) * 2006-09-29 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for improved ion beam transport
US7528390B2 (en) * 2006-09-29 2009-05-05 Axcelis Technologies, Inc. Broad beam ion implantation architecture
US8124499B2 (en) 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080116390A1 (en) * 2006-11-17 2008-05-22 Pyramid Technical Consultants, Inc. Delivery of a Charged Particle Beam
US7807983B2 (en) * 2007-01-12 2010-10-05 Varian Semiconductor Equipment Associates, Inc. Technique for reducing magnetic fields at an implant location
US8228658B2 (en) * 2007-02-08 2012-07-24 Axcelis Technologies, Inc. Variable frequency electrostatic clamping
WO2008115339A1 (en) * 2007-03-15 2008-09-25 White Nicholas R Open-ended electromagnetic corrector assembly and method for deflecting, focusing, and controlling the uniformity of a traveling ion beam
US7851767B2 (en) * 2007-03-21 2010-12-14 Advanced Ion Beam Technology, Inc. Beam control assembly for ribbon beam of ions for ion implantation
US7652270B2 (en) * 2007-06-05 2010-01-26 Varian Semiconductor Equipment Associates, Inc. Techniques for ion beam current measurement using a scanning beam current transformer
US7772571B2 (en) * 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
US20090124065A1 (en) * 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
US20090121122A1 (en) * 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Techniques for measuring and controlling ion beam angle and density uniformity
US7820985B2 (en) * 2007-12-28 2010-10-26 Varian Semiconductor Equipment Associates, Inc. High tilt implant angle performance using in-axis tilt
JP4365441B2 (ja) * 2008-03-31 2009-11-18 三井造船株式会社 イオン注入装置、イオン注入方法及びプログラム
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US8263941B2 (en) * 2008-11-13 2012-09-11 Varian Semiconductor Equipment Associates, Inc. Mass analysis magnet for a ribbon beam
US8354654B2 (en) * 2009-03-18 2013-01-15 Kingstone Semiconductor Company Apparatus and method for ion beam implantation using scanning and spot beams with improved high dose beam quality
CN102612719B (zh) * 2009-11-10 2014-02-19 三菱电机株式会社 粒子射线照射系统及粒子射线照射方法
US8604443B2 (en) * 2009-11-13 2013-12-10 Varian Semiconductor Equipment Associates, Inc. System and method for manipulating an ion beam
US8089050B2 (en) * 2009-11-19 2012-01-03 Twin Creeks Technologies, Inc. Method and apparatus for modifying a ribbon-shaped ion beam
CN102791073A (zh) * 2011-05-17 2012-11-21 上海凯世通半导体有限公司 束流传输系统及其传输方法
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
KR101920236B1 (ko) * 2012-06-19 2018-11-20 삼성전자주식회사 배터리를 충전하기 위한 방법 및 그 전자 장치
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets
US8993980B1 (en) 2013-10-22 2015-03-31 Varian Semiconductor Equipment Associates, Inc. Dual stage scanner for ion beam control
US9029811B1 (en) 2013-10-22 2015-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus to control an ion beam
US20150228445A1 (en) * 2014-02-13 2015-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for three dimensional ion implantation
US9972475B2 (en) * 2014-12-16 2018-05-15 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control an ion beam
US9793087B2 (en) * 2015-09-10 2017-10-17 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for manipulating an ion beam
US9734982B1 (en) 2016-05-24 2017-08-15 Nissin Ion Equipment Co., Ltd. Beam current density distribution adjustment device and ion implanter
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
DE102017205231B3 (de) * 2017-03-28 2018-08-09 Carl Zeiss Microscopy Gmbh Teilchenoptische Vorrichtung und Teilchenstrahlsystem
US10290463B2 (en) * 2017-04-27 2019-05-14 Imatrex, Inc. Compact deflecting magnet
CN108231523A (zh) * 2018-01-18 2018-06-29 德淮半导体有限公司 离子植入机及其使用方法
US10720357B2 (en) * 2018-03-01 2020-07-21 Varian Semiconductor Equipment Associates, Inc. Method of forming transistor device having fin cut regions
US11320476B2 (en) * 2019-07-15 2022-05-03 The Boeing Company Eddy current system for use with electrically-insulative structures and methods for inductively heating or inductively inspecting
US12170182B2 (en) * 2021-07-02 2024-12-17 Advanced Ion Beam Technology, Inc. Ribbon beam angle adjustment in an ion implantation system
US12493005B1 (en) 2022-06-07 2025-12-09 Nexgen Semi Holding, Inc. Extended range active illumination imager
TWI908494B (zh) * 2024-11-25 2025-12-11 漢辰科技股份有限公司 離子佈植機

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541328A (en) 1969-03-12 1970-11-17 Deuteron Inc Magnetic spectrograph having means for correcting for aberrations in two mutually perpendicular directions
BE791387A (fr) * 1971-11-15 1973-03-01 Ford Motor Co Etrier de reglage de deviation d'un faisceau de particules chargees
JPS5152890A (en) * 1974-09-26 1976-05-10 Shigekazu Ikegami Takyokujibasochi
JPH01319242A (ja) * 1988-06-20 1989-12-25 Hitachi Ltd ビーム強度分布制御方法及び装置
US5422723A (en) 1992-09-21 1995-06-06 Texas Instruments Incorporated Diffraction gratings for submicron linewidth measurement
US5350926A (en) 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
JP2544588B2 (ja) 1994-07-29 1996-10-16 株式会社日立製作所 測長用校正部材及びその作製方法
US5834761A (en) * 1996-03-22 1998-11-10 Sharp Kabushiki Kaisah Image input apparatus having a spatial filter controller
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
JP3449198B2 (ja) * 1997-10-22 2003-09-22 日新電機株式会社 イオン注入装置
JPH11271497A (ja) * 1998-03-20 1999-10-08 Sumitomo Heavy Ind Ltd マルチポール電磁石
EP1182684B1 (en) * 2000-08-14 2008-07-23 eLith LLC Lithographic apparatus
US7289212B2 (en) 2000-08-24 2007-10-30 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufacturing thereby
US6437350B1 (en) * 2000-08-28 2002-08-20 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting beam parallelism in ion implanters
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
US6763316B2 (en) * 2002-03-21 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Method for measurement of beam emittance in a charged particle transport system
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
JP4287671B2 (ja) 2003-02-19 2009-07-01 株式会社日立ハイテクノロジーズ 測長用標準部材およびその作製方法、並びにそれを用いた電子ビーム測長装置
US7078713B2 (en) * 2003-03-28 2006-07-18 White Nicholas R Electromagnetic regulator assembly for adjusting and controlling the current uniformity of continuous ion beams
US7105839B2 (en) * 2003-10-15 2006-09-12 White Nicholas R Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams
US7326941B2 (en) * 2004-05-18 2008-02-05 Advanced Ion Beam Technology, Inc. Apparatus and methods for ion beam implantation using ribbon and spot beams
US7326841B2 (en) * 2006-04-26 2008-02-05 Giorgio Fadda Percussion instrument

Also Published As

Publication number Publication date
US20060169924A1 (en) 2006-08-03
KR20050048589A (ko) 2005-05-24
AU2003251973A1 (en) 2004-02-02
EP1532650A1 (en) 2005-05-25
US7301156B2 (en) 2007-11-27
US7351984B2 (en) 2008-04-01
US20070181832A1 (en) 2007-08-09
US7897943B2 (en) 2011-03-01
US7888660B2 (en) 2011-02-15
WO2004008476A1 (en) 2004-01-22
US20050242294A1 (en) 2005-11-03
KR100926398B1 (ko) 2009-11-12
US20040097058A1 (en) 2004-05-20
US6933507B2 (en) 2005-08-23
JP2005533353A (ja) 2005-11-04
US20070023697A1 (en) 2007-02-01

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