JP2005533353A5 - - Google Patents

Download PDF

Info

Publication number
JP2005533353A5
JP2005533353A5 JP2004521941A JP2004521941A JP2005533353A5 JP 2005533353 A5 JP2005533353 A5 JP 2005533353A5 JP 2004521941 A JP2004521941 A JP 2004521941A JP 2004521941 A JP2004521941 A JP 2004521941A JP 2005533353 A5 JP2005533353 A5 JP 2005533353A5
Authority
JP
Japan
Prior art keywords
core member
focusing coil
distributed along
coil units
coil unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004521941A
Other languages
English (en)
Japanese (ja)
Other versions
JP4509781B2 (ja
JP2005533353A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2003/022311 external-priority patent/WO2004008476A1/en
Publication of JP2005533353A publication Critical patent/JP2005533353A/ja
Publication of JP2005533353A5 publication Critical patent/JP2005533353A5/ja
Application granted granted Critical
Publication of JP4509781B2 publication Critical patent/JP4509781B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2004521941A 2002-07-17 2003-07-17 注入装置のリボン形状イオンビームの特性制御 Expired - Lifetime JP4509781B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39632202P 2002-07-17 2002-07-17
PCT/US2003/022311 WO2004008476A1 (en) 2002-07-17 2003-07-17 Controlling the characteristics of ribbon-shaped implanter ion-beams

Publications (3)

Publication Number Publication Date
JP2005533353A JP2005533353A (ja) 2005-11-04
JP2005533353A5 true JP2005533353A5 (https=) 2008-04-24
JP4509781B2 JP4509781B2 (ja) 2010-07-21

Family

ID=30116011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004521941A Expired - Lifetime JP4509781B2 (ja) 2002-07-17 2003-07-17 注入装置のリボン形状イオンビームの特性制御

Country Status (6)

Country Link
US (5) US6933507B2 (https=)
EP (1) EP1532650A1 (https=)
JP (1) JP4509781B2 (https=)
KR (1) KR100926398B1 (https=)
AU (1) AU2003251973A1 (https=)
WO (1) WO2004008476A1 (https=)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
US20060043316A1 (en) * 2003-06-10 2006-03-02 Varian Semiconductor Equipment Associates, Inc. Ion implanter having enhanced low energy ion beam transport
US7105839B2 (en) * 2003-10-15 2006-09-12 White Nicholas R Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
WO2006060378A2 (en) * 2004-11-30 2006-06-08 Purser Kenneth H Broad energy-range ribbon ion beam collimation using a variable-gradient dipole
US20060124155A1 (en) * 2004-12-13 2006-06-15 Suuronen David E Technique for reducing backside particles
US7525103B2 (en) * 2006-01-20 2009-04-28 Varian Semiconductor Equipment Associates, Inc. Technique for improving uniformity of a ribbon beam
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7584890B2 (en) 2006-06-23 2009-09-08 Global Payment Technologies, Inc. Validator linear array
US7619228B2 (en) * 2006-09-29 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for improved ion beam transport
US7528390B2 (en) * 2006-09-29 2009-05-05 Axcelis Technologies, Inc. Broad beam ion implantation architecture
US8124499B2 (en) 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080116390A1 (en) * 2006-11-17 2008-05-22 Pyramid Technical Consultants, Inc. Delivery of a Charged Particle Beam
US7807983B2 (en) * 2007-01-12 2010-10-05 Varian Semiconductor Equipment Associates, Inc. Technique for reducing magnetic fields at an implant location
US8228658B2 (en) * 2007-02-08 2012-07-24 Axcelis Technologies, Inc. Variable frequency electrostatic clamping
WO2008115339A1 (en) * 2007-03-15 2008-09-25 White Nicholas R Open-ended electromagnetic corrector assembly and method for deflecting, focusing, and controlling the uniformity of a traveling ion beam
US7851767B2 (en) * 2007-03-21 2010-12-14 Advanced Ion Beam Technology, Inc. Beam control assembly for ribbon beam of ions for ion implantation
US7652270B2 (en) * 2007-06-05 2010-01-26 Varian Semiconductor Equipment Associates, Inc. Techniques for ion beam current measurement using a scanning beam current transformer
US7772571B2 (en) * 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
US20090124065A1 (en) * 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
US20090121122A1 (en) * 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Techniques for measuring and controlling ion beam angle and density uniformity
US7820985B2 (en) * 2007-12-28 2010-10-26 Varian Semiconductor Equipment Associates, Inc. High tilt implant angle performance using in-axis tilt
JP4365441B2 (ja) * 2008-03-31 2009-11-18 三井造船株式会社 イオン注入装置、イオン注入方法及びプログラム
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US8263941B2 (en) * 2008-11-13 2012-09-11 Varian Semiconductor Equipment Associates, Inc. Mass analysis magnet for a ribbon beam
US8354654B2 (en) * 2009-03-18 2013-01-15 Kingstone Semiconductor Company Apparatus and method for ion beam implantation using scanning and spot beams with improved high dose beam quality
CN102612719B (zh) * 2009-11-10 2014-02-19 三菱电机株式会社 粒子射线照射系统及粒子射线照射方法
US8604443B2 (en) * 2009-11-13 2013-12-10 Varian Semiconductor Equipment Associates, Inc. System and method for manipulating an ion beam
US8089050B2 (en) * 2009-11-19 2012-01-03 Twin Creeks Technologies, Inc. Method and apparatus for modifying a ribbon-shaped ion beam
CN102791073A (zh) * 2011-05-17 2012-11-21 上海凯世通半导体有限公司 束流传输系统及其传输方法
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
KR101920236B1 (ko) * 2012-06-19 2018-11-20 삼성전자주식회사 배터리를 충전하기 위한 방법 및 그 전자 장치
US9177708B2 (en) * 2013-06-14 2015-11-03 Varian Semiconductor Equipment Associates, Inc. Annular cooling fluid passage for magnets
US8993980B1 (en) 2013-10-22 2015-03-31 Varian Semiconductor Equipment Associates, Inc. Dual stage scanner for ion beam control
US9029811B1 (en) 2013-10-22 2015-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus to control an ion beam
US20150228445A1 (en) * 2014-02-13 2015-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for three dimensional ion implantation
US9972475B2 (en) * 2014-12-16 2018-05-15 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control an ion beam
US9793087B2 (en) * 2015-09-10 2017-10-17 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for manipulating an ion beam
US9734982B1 (en) 2016-05-24 2017-08-15 Nissin Ion Equipment Co., Ltd. Beam current density distribution adjustment device and ion implanter
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
DE102017205231B3 (de) * 2017-03-28 2018-08-09 Carl Zeiss Microscopy Gmbh Teilchenoptische Vorrichtung und Teilchenstrahlsystem
US10290463B2 (en) * 2017-04-27 2019-05-14 Imatrex, Inc. Compact deflecting magnet
CN108231523A (zh) * 2018-01-18 2018-06-29 德淮半导体有限公司 离子植入机及其使用方法
US10720357B2 (en) * 2018-03-01 2020-07-21 Varian Semiconductor Equipment Associates, Inc. Method of forming transistor device having fin cut regions
US11320476B2 (en) * 2019-07-15 2022-05-03 The Boeing Company Eddy current system for use with electrically-insulative structures and methods for inductively heating or inductively inspecting
US12170182B2 (en) * 2021-07-02 2024-12-17 Advanced Ion Beam Technology, Inc. Ribbon beam angle adjustment in an ion implantation system
US12493005B1 (en) 2022-06-07 2025-12-09 Nexgen Semi Holding, Inc. Extended range active illumination imager
TWI908494B (zh) * 2024-11-25 2025-12-11 漢辰科技股份有限公司 離子佈植機

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541328A (en) 1969-03-12 1970-11-17 Deuteron Inc Magnetic spectrograph having means for correcting for aberrations in two mutually perpendicular directions
BE791387A (fr) * 1971-11-15 1973-03-01 Ford Motor Co Etrier de reglage de deviation d'un faisceau de particules chargees
JPS5152890A (en) * 1974-09-26 1976-05-10 Shigekazu Ikegami Takyokujibasochi
JPH01319242A (ja) * 1988-06-20 1989-12-25 Hitachi Ltd ビーム強度分布制御方法及び装置
US5422723A (en) 1992-09-21 1995-06-06 Texas Instruments Incorporated Diffraction gratings for submicron linewidth measurement
US5350926A (en) 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
JP2544588B2 (ja) 1994-07-29 1996-10-16 株式会社日立製作所 測長用校正部材及びその作製方法
US5834761A (en) * 1996-03-22 1998-11-10 Sharp Kabushiki Kaisah Image input apparatus having a spatial filter controller
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
JP3449198B2 (ja) * 1997-10-22 2003-09-22 日新電機株式会社 イオン注入装置
JPH11271497A (ja) * 1998-03-20 1999-10-08 Sumitomo Heavy Ind Ltd マルチポール電磁石
EP1182684B1 (en) * 2000-08-14 2008-07-23 eLith LLC Lithographic apparatus
US7289212B2 (en) 2000-08-24 2007-10-30 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufacturing thereby
US6437350B1 (en) * 2000-08-28 2002-08-20 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting beam parallelism in ion implanters
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
US6763316B2 (en) * 2002-03-21 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Method for measurement of beam emittance in a charged particle transport system
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
JP4287671B2 (ja) 2003-02-19 2009-07-01 株式会社日立ハイテクノロジーズ 測長用標準部材およびその作製方法、並びにそれを用いた電子ビーム測長装置
US7078713B2 (en) * 2003-03-28 2006-07-18 White Nicholas R Electromagnetic regulator assembly for adjusting and controlling the current uniformity of continuous ion beams
US7105839B2 (en) * 2003-10-15 2006-09-12 White Nicholas R Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams
US7326941B2 (en) * 2004-05-18 2008-02-05 Advanced Ion Beam Technology, Inc. Apparatus and methods for ion beam implantation using ribbon and spot beams
US7326841B2 (en) * 2006-04-26 2008-02-05 Giorgio Fadda Percussion instrument

Similar Documents

Publication Publication Date Title
JP2005533353A5 (https=)
US20120152906A1 (en) Wire electric discharge machining apparatus
CN112786275B (zh) 一种磁性软体机器人的可控和可重构磁化系统及方法
US20140091890A1 (en) Switching power supply
JP2010514393A (ja) ステアリングミラーの適用のための高帯域リニアアクチュエータ
DE502004009697D1 (de) Kristallzüchtungsanlage
JP2002325421A5 (https=)
CN1323156C (zh) 用于利用基于电磁的辐射处理细胞的系统和方法
US20130106206A1 (en) High energy density vibration energy harvesting device with high-mu material
US3645377A (en) Method of orientation of nonmagnetic current-conducting bodies magnetic field and devices for carrying same into effect
CN109475038A (zh) 螺旋磁路结构及应用其的粒子加速器
USH1615H (en) Magnetic fields for chiron wigglers
JP2010527135A5 (https=)
CN114023527A (zh) 一种基于磁化线圈的多极磁化方法
Deis et al. A long electromagnetic wiggler for the paladin free-electron laser experiments
RU2689836C1 (ru) Магнитная система подвески для электрохимической обработки контакт-деталей герконов
JP2020061523A (ja) 電磁石、磁場印加システム
EP2429062A8 (de) Elektrischer Generator
DE4302630C1 (de) Koaxial-Beschleuniger zum axialen Beschleunigen eines Plasmarings
JPH06349593A (ja) シートプラズマ生成方法及びその装置
CN218585653U (zh) 带电粒子束的偏转合轴装置
CN112259321B (zh) 一种电磁单元、阵列及应用
JP2011522424A5 (https=)
CN212782915U (zh) 一种四极钳式电磁铁
CA2530753A1 (en) Method and means of multi-activation of ions and atoms with nmr and epr