JP4505462B2 - レーザ・ダイオードによってポンピングされるモノリシック固体レーザ装置、およびこの装置の使用方法 - Google Patents
レーザ・ダイオードによってポンピングされるモノリシック固体レーザ装置、およびこの装置の使用方法 Download PDFInfo
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- JP4505462B2 JP4505462B2 JP2006530422A JP2006530422A JP4505462B2 JP 4505462 B2 JP4505462 B2 JP 4505462B2 JP 2006530422 A JP2006530422 A JP 2006530422A JP 2006530422 A JP2006530422 A JP 2006530422A JP 4505462 B2 JP4505462 B2 JP 4505462B2
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- 238000000034 method Methods 0.000 title claims description 16
- 239000007787 solid Substances 0.000 title description 7
- 239000013078 crystal Substances 0.000 claims abstract description 78
- 230000010287 polarization Effects 0.000 claims abstract description 23
- 238000005086 pumping Methods 0.000 claims abstract description 15
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 26
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 17
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims description 3
- 229910003334 KNbO3 Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 239000003570 air Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005312 nonlinear dynamic Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0606—Crystal lasers or glass lasers with polygonal cross-section, e.g. slab, prism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08054—Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Description
本発明は青色又は緑色レーザ・ルミネセンスの生成の分野に特に有意義に利用することができるが、これに限定されるものではない。
a)第1の方法は、キャビティー内に楔を導入することである。この方法は、特に下地氏の米国特許5,838,713に開示されており、幾つかの問題を提起している。即ち、楔は、それがYAGの面と二逓倍用結晶の面と
によって形成されていない限り、キャビティー内に損失を生じさせる。YAGの面と二逓倍用結晶の面とによって楔を形成する場合には、工業的に達成しかつ安定化するのが困難な非常に高い位置決め精度(サブミクロン)を必要とする。この問題を解決する一方法は、接触面の一部にわたって角度を設けながら増幅用媒質を二逓倍用結晶に光学的に接触させることである。この角度は2つの物質の間に小さな空気スペースを生じさせる。この方法は接触、ひいてはモノリシック・レーザの一体性を弱化させると共に、接着剤による界面の保護を不可能にする。
−光学的ポンピング手段(好ましくはレーザダイオード)と、
−前記光学的ポンピング手段から発射された基本波長のレーザ光によって励起される増幅用媒質であって、その出力面が前記基本波長に対するブリュースター(Brewster)角に沿ってカットされたものと、
−周波数二逓倍用の複屈折性結晶、
とを備えたレーザ装置によって達成される。
ポンピング装置は示してない。
Claims (13)
- −光学的ポンピング手段(10)と、
−前記光学的ポンピング手段から発射された基本波長のレーザ光(11)によって励起される増幅用媒質(2)であって、その出力面(7)が前記基本波長に対するブリュースター角に沿ってカットされたものと、
−周波数二逓倍用の複屈折性結晶、
とを備えたレーザ装置であって:
その特徴は、前記増幅用媒質の出力面(7)と前記複屈折性結晶の入力面(8)との間に挿入された等方性媒質(3)を更に備え、前記増幅用媒質(2)と複屈折性結晶(4)とはモノリシック共鳴用キャビティーを構成するべく互いに一体になっており、前記複屈折性結晶の“c”結晶軸は、ブリュースター表面によって定まる基本波の偏光の直交方向に対して、ゼロでない角度θcをなすことからなるレーザ装置。 - 前記複屈折性結晶の入力面(8)はレーザ光(5)の伝播方向に対する法線に対してゼロでなくかつ1度に等しいかそれより小さい角度εでカットされていることを特徴とする請求項1に基づくレーザ装置。
- 前記複屈折性結晶の出力面(9)はレーザ光(5)の伝播方向に対する法線に対してゼロでなくかつ1度に等しいかそれより小さい角度εでカットされていることを特徴とする請求項1又は2に基づくレーザ装置。
- 前記角度εは1度に等しいかそれより小さいことを特徴とする請求項2又は3に基づくレーザ装置。
- 基本波の伝播方向に対する直交面は“c”結晶軸を含み、この面は、基本波と高調波との間で作動温度に対する位相の同調を得るべく、複屈折性結晶の“a”軸および“b”軸に対して角度をなしていることを特徴とする前記請求項のいづれかに基づくレーザ装置。
- 増幅用媒質(2)はネオジム(Nd)でドープしたイットリウム・アルミニウム・ガーネット(YAG)からなることを特徴とする前記請求項のいづれかに基づくレーザ装置。
- 増幅用媒質(2)は入力面がミラー面を構成する円柱形Nd:YAGであることを特徴とする請求項6に基づくレーザ装置。
- ポンピング手段(10)はレーザダイオードであることを特徴とする前記請求項のいづれかに基づくレーザ装置。
- 複屈折性結晶(4)はニオブ酸カリウム(KNbO3)からなることを特徴とする前記請求項のいづれかに基づくレーザ装置。
- 等方性媒質は空気であることを特徴とする前記請求項のいづれかに基づくレーザ装置。
- 等方性媒質はタンタル酸カリウム(KTaO3)からなることを特徴とする請求項1から9のいづれかに基づくレーザ装置。
- 等方性媒質は複屈折性結晶の屈折率に近い屈折率(等方性媒質の屈折率と複屈折性結晶の屈折率との差が複屈折性結晶の屈折率の10%以内)を有する等方性結晶で構成されていることを特徴とする請求項1から9のいづれかに基づくレーザ装置。
- 前記請求項のいづれかに基づくレーザ装置内で実施する方法であって、ポンピング手段によって発射されたレーザ光を増幅器の入力面に対して並進移動させることにより、レーザ光が通る光路を変化させることを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0311809A FR2860928B1 (fr) | 2003-10-09 | 2003-10-09 | Dispositif laser a solide monolithique pompe par diode laser, et procede mis en oeuvre dans un tel dispositif |
PCT/FR2004/002540 WO2005036703A1 (fr) | 2003-10-09 | 2004-10-08 | Dispositif laser a solide monolithique pompe par diode laser, et procede mis en oeuvre du dispositif |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007508686A JP2007508686A (ja) | 2007-04-05 |
JP4505462B2 true JP4505462B2 (ja) | 2010-07-21 |
Family
ID=34355347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006530422A Active JP4505462B2 (ja) | 2003-10-09 | 2004-10-08 | レーザ・ダイオードによってポンピングされるモノリシック固体レーザ装置、およびこの装置の使用方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7593439B2 (ja) |
EP (1) | EP1673839B1 (ja) |
JP (1) | JP4505462B2 (ja) |
CN (1) | CN100452575C (ja) |
AT (1) | ATE357074T1 (ja) |
DE (1) | DE602004005355T2 (ja) |
FR (1) | FR2860928B1 (ja) |
IL (1) | IL174764A (ja) |
WO (1) | WO2005036703A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2884651B1 (fr) * | 2005-04-15 | 2007-11-30 | Oxxius Sa Sa | "dispositif laser lineaire monolithique monofrequence, et systeme comprenant un tel dispositif" |
FR2896629B1 (fr) * | 2006-01-20 | 2009-12-04 | Oxxius Sa | "laser continu, triple en frequence en intra-cavite et monofrequence" |
FR2899391B1 (fr) * | 2006-03-31 | 2008-05-16 | Oxxius Sa | "dispositif laser continu pompe par diode comprenant deux filtres" |
JP5018685B2 (ja) * | 2008-08-07 | 2012-09-05 | 株式会社島津製作所 | 光学素子および光学素子の製造方法 |
JPWO2011074215A1 (ja) * | 2009-12-14 | 2013-04-25 | パナソニック株式会社 | 波長変換レーザ光源、光学素子及び画像表示装置 |
CN114384067B (zh) * | 2021-12-27 | 2023-02-10 | 中国科学院福建物质结构研究所 | 一种各向同性激光介质中弱各向异性的测量装置及测量方法和应用 |
Family Cites Families (20)
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US3502958A (en) * | 1967-09-25 | 1970-03-24 | Bell Telephone Labor Inc | Electric field tunable coherent optical device |
US4395769A (en) * | 1981-03-03 | 1983-07-26 | Bell Telephone Laboratories, Incorporated | Tunable semiconductor laser |
US4809291A (en) * | 1984-11-26 | 1989-02-28 | Board Of Trustees, Of Leland Stanford Jr U. | Diode pumped laser and doubling to obtain blue light |
US4761059A (en) * | 1986-07-28 | 1988-08-02 | Rockwell International Corporation | External beam combining of multiple lasers |
US4884276A (en) * | 1987-11-25 | 1989-11-28 | Amoco Corporation | Optical feedback control in the frequency conversion of laser diode radiation |
US5256164A (en) * | 1988-02-02 | 1993-10-26 | Massachusetts Institute Of Technology | Method of fabricating a microchip laser |
US5265116A (en) * | 1988-02-02 | 1993-11-23 | Massachusetts Institute Of Technology | Microchip laser |
US4953166A (en) * | 1988-02-02 | 1990-08-28 | Massachusetts Institute Of Technology | Microchip laser |
US5043996A (en) * | 1989-03-31 | 1991-08-27 | The Board Of Trustees Of The Leland Stanford Junior University | Monlithic nonplanar ring oscillator and method |
US5315433A (en) * | 1991-02-28 | 1994-05-24 | Fuji Photo Film Co., Ltd. | Optical wavelength converting apparatus |
JPH0567824A (ja) * | 1991-09-06 | 1993-03-19 | Mitsubishi Electric Corp | 半導体励起固体レーザ |
US5206867A (en) * | 1992-01-31 | 1993-04-27 | The United States Of America As Represented By The Secretary Of The Navy | Suppression of relaxation oscillations in flashpumped, two-micron tunable solid state lasers |
JPH05235457A (ja) * | 1992-02-25 | 1993-09-10 | Sumitomo Metal Mining Co Ltd | Ld励起shgレーザ装置 |
DE69527830T2 (de) * | 1994-11-14 | 2003-01-02 | Mitsui Chemicals Inc | Wellenlängenstabilisierter Lichtquelle |
US5838713A (en) * | 1997-04-21 | 1998-11-17 | Shimoji; Yutaka | Continuously tunable blue microchip laser |
US5905748A (en) * | 1997-05-27 | 1999-05-18 | Uniphase Corporation | Single mode laser and method suitable for use in frequency multiplied |
US5850407A (en) * | 1997-11-25 | 1998-12-15 | Lightwave Electronics Corporation | Third-harmonic generator with uncoated brewster-cut dispersive output facet |
JP2000133863A (ja) * | 1998-10-28 | 2000-05-12 | Shimadzu Corp | 固体レーザ装置 |
US6373865B1 (en) * | 2000-02-01 | 2002-04-16 | John E. Nettleton | Pseudo-monolithic laser with an intracavity optical parametric oscillator |
US7065109B2 (en) * | 2002-05-08 | 2006-06-20 | Melles Griot Inc. | Laser with narrow bandwidth antireflection filter for frequency selection |
-
2003
- 2003-10-09 FR FR0311809A patent/FR2860928B1/fr not_active Expired - Lifetime
-
2004
- 2004-10-08 IL IL174764A patent/IL174764A/en not_active IP Right Cessation
- 2004-10-08 WO PCT/FR2004/002540 patent/WO2005036703A1/fr active IP Right Grant
- 2004-10-08 DE DE602004005355T patent/DE602004005355T2/de active Active
- 2004-10-08 CN CNB2004800363885A patent/CN100452575C/zh not_active Expired - Fee Related
- 2004-10-08 AT AT04791492T patent/ATE357074T1/de not_active IP Right Cessation
- 2004-10-08 EP EP04791492A patent/EP1673839B1/fr not_active Not-in-force
- 2004-10-08 US US10/575,163 patent/US7593439B2/en active Active
- 2004-10-08 JP JP2006530422A patent/JP4505462B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
FR2860928B1 (fr) | 2006-02-03 |
ATE357074T1 (de) | 2007-04-15 |
WO2005036703A1 (fr) | 2005-04-21 |
CN1890847A (zh) | 2007-01-03 |
JP2007508686A (ja) | 2007-04-05 |
CN100452575C (zh) | 2009-01-14 |
DE602004005355T2 (de) | 2007-11-29 |
IL174764A0 (en) | 2006-08-20 |
EP1673839A1 (fr) | 2006-06-28 |
EP1673839B1 (fr) | 2007-03-14 |
US7593439B2 (en) | 2009-09-22 |
FR2860928A1 (fr) | 2005-04-15 |
DE602004005355D1 (de) | 2007-04-26 |
IL174764A (en) | 2011-12-29 |
US20070014320A1 (en) | 2007-01-18 |
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