JP4502475B2 - Hard coating, wear-resistant member and method for producing the same - Google Patents

Description

【００４６】
【表２】

【００４７】
表１および表２より、Ｎｏ．１〜１３、１５〜２０、２３、２５〜２７、３０〜３４、３７〜３９、４１〜４３および４５〜４７は、本発明の要件を満たしているため、結晶構造がコランダム構造のみからなる酸化アルミニウム皮膜を得ることができた。
【００４８】
これに対して、Ｎｏ．１４、２１、２２、２４、２８、２９、３５、３６、４０、４４、４８および４９では、コランダム構造のみからなる酸化アルミニウム皮膜が得られなかった。即ち、Ｎｏ．２１、２２、２８、４０及び４４は、酸化物皮膜の格子定数が本発明で規定する範囲を外れているため、またＮｏ．１４、２４、３５及び４８は、酸化物皮膜の膜厚が薄すぎるため、生成した酸化アルミニウム皮膜において、コランダム構造以外に立方晶構造も形成される結果となった。
【００４９】
上述の通り、酸化物皮膜の膜厚が薄すぎるＮｏ．１４、２４、３５及び４８では、形成された酸化アルミニウムが、コランダム構造と立方晶構造の混合結晶となったが、これを透過電子顕微鏡にて断面観察したところ、基材が十分に酸化物皮膜で覆われておらず、基材表面が露出している部分に、立方晶構造の酸化アルミニウムが形成していることがわかった。
【００５０】
更にＮｏ．２９、３６および４９は、酸化アルミニウム皮膜の形成を、いずれも本発明で好ましいとする温度よりも低温で行ったため、コランダム構造以外の結晶構造が形成されたものと考えられる。
【００５１】
（２）更に、Ｎｏ．５〜１０、１４および２９で得られたチップを用いて、以下に示す条件で丸棒（Ｓ５０Ｃ）の旋削試験を行い、旋削によってチップに生じたクレーター摩耗の深さを表面粗さ計を用いて測定した。その結果を表３に示す。
被削材：Ｓ５０Ｃ
切削速度：２００ｍ／ｍｉｎ.
送り速度：０．２ｍｍ／ｓｅｃ.
切り込み：２ｍｍ
乾式（エアーブローのみ）
切削時間 １０分
【００５２】
【表３】

【００５３】
表３より、Ｎｏ．５〜１０は、コランダム構造の酸化アルミニウムが形成されているため、摩耗量は小さく耐摩耗性に優れていることが分かる。これに対して、酸化アルミニウムの構造がコランダム構造以外であるＮｏ．１４および２９では、摩耗量が大きくなり、耐摩耗性に劣る結果となった。
【００５４】
【発明の効果】
本発明は以上の様に構成されており、コランダム構造の酸化アルミニウムを積層する前に、コランダム構造であり且つ本発明で規定する格子定数の酸化物皮膜を予め形成しておくことで、耐熱性、耐摩耗性等に優れたコランダム構造の酸化アルミニウムを低温条件下で形成することができることとなった。そして、この様な硬質皮膜の形成方法の実現によって、多様な基材に対して、コランダム構造の酸化アルミニウムを形成し、優れた耐熱性、耐摩耗性等を付与できることとなった。
【図面の簡単な説明】
【図１】本発明に係る硬質皮膜の形成に用いるＰＶＤ成膜装置を例示する概略断面説明図である。
【図２】本発明に係る硬質皮膜の形成に用いる別のＰＶＤ成膜装置を例示する概略断面説明図である。
【符号の説明】
１ チャンバ
２ 基材
３ 試料保持台
４ Ｃｒターゲット（ＵＢＭＳ用）
５ Ａｌターゲット（ＵＢＭＳ用）
６ Ｔｉ−Ａｌ合金ターゲット（ＡＩＰ用）
７ 導入ガス（窒素、酸素、アルゴン）
８ 排気
９ ＣｒターゲットまたはＣｒ−Ａｌ合金ターゲット（ＡＩＰ用）[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a hard film excellent in wear resistance and heat resistance applied to wear-resistant members such as cutting tools, sliding members and molds. The present invention relates to a useful hard film capable of forming a hard film having excellent properties under low temperature conditions without impairing the characteristics of the base material such as the cutting tool and the sliding member, and a method for forming the hard film.
[0002]
In addition, although the hard film | membrane used as the object of this invention is applicable to the above-mentioned various uses, below, description is advanced centering on the case where it applies to a cutting tool as a representative example.
[0003]
[Prior art]
In general, for cutting tools and sliding members that require excellent wear resistance and sliding properties, physical vapor deposition (hereinafter referred to as PVD method) or chemicals are applied to the surface of a substrate such as high-speed steel or cemented carbide. A method of forming a hard film such as titanium nitride or titanium aluminum nitride is employed by a method such as a vapor deposition method (hereinafter referred to as a CVD method), but the cutting edge of a cutting tool or the like has a high temperature of 1000 ° C. or higher during cutting. In particular, heat resistance is often ensured by forming aluminum oxide as a hard film.
[0004]
The aluminum oxide has various crystal structures depending on the temperature, and all of them are thermally metastable. However, when the temperature of the cutting edge during cutting, such as a cutting tool, fluctuates significantly over a wide range from room temperature to 1000 ° C. or more, the crystal structure of the aluminum oxide changes, causing problems such as cracking or peeling of the film. Arise. However, only the corundum-structured aluminum oxide produced by increasing the substrate temperature to 1000 ° C. or higher by adopting the CVD method, once maintained, maintains a thermally stable structure regardless of the temperature. To do. Therefore, in order to impart heat resistance to a cutting tool or the like, coating with aluminum oxide having a corundum structure is a very effective means.
[0005]
However, as described above, corundum-structured aluminum oxide cannot be formed unless the substrate is heated to 1000 ° C. or higher, and therefore, applicable substrates are limited. That is, depending on the type of the base material, when it is exposed to a high temperature of 1000 ° C. or higher, it becomes soft and loses its suitability as a base material for wear-resistant members.
[0006]
In response to such a problem, Japanese Patent Application Laid-Open No. 5-208326 reports that a high hardness (Al, Cr) ₂ O ₃ mixed crystal was obtained at 500 ° C. or lower. However, when the work material is composed mainly of iron, Cr present on the surface of the mixed crystal film tends to cause a chemical reaction with iron on the cutting surface during cutting. Causes to shrink.
[0007]
Also, O.Zywitzki, G.Hoetzsch et al. Report that a corundum aluminum oxide film is formed at 750 ° C. or higher by reactive sputtering using a high power (11-17 kW) pulse power source. (Surf. Coat. Technol., 86-87 (1996) 640-647). However, in order to obtain aluminum oxide having a corundum structure by this method, it is inevitable to increase the size of the pulse power source, and the base material temperature must be increased to 750 ° C. or higher in the production. There arises a problem that base material properties are impaired, such as softening of a high-speed steel generally used.
[0008]
In order to provide wear resistance and the like with cutting tools that are currently widely used, a coating made of titanium nitride, carbide, carbonitride, or the like is formed on the surface of the substrate, and the corundum structure is oxidized on the coating. Aluminum is formed. Furthermore, in recent years, a composite nitride film of titanium and aluminum (hereinafter referred to as TiAlN) exhibits superior wear resistance, so that it is cut instead of a film made of nitride, carbide, carbonitride, or the like of titanium. It is being applied to tools.
[0009]
However, the TiAlN film can be formed only by an arc ion plating method (hereinafter referred to as AIP method), which is a kind of PVD method, while the aluminum oxide having the corundum structure can be formed only by a CVD method. In order to obtain a laminated film, it is necessary to sequentially form each film using a CVD apparatus and a PVD apparatus, and the production efficiency is very poor. Therefore, it is desired to establish a technique that can efficiently form the aluminum oxide having the corundum structure, the TiAlN film, and other useful films by a continuous process.
[0010]
[Problems to be solved by the invention]
The present invention has been made in view of the circumstances as described above, and its purpose is to efficiently produce a hard film excellent in heat resistance, wear resistance and the like at a low temperature without impairing the properties of the substrate. It is to provide a useful method that can.
[0011]
[Means for Solving the Problems]
The hard film according to the present invention is a corundum-structured aluminum oxide film formed on one surface of a corundum-structured oxide film having a lattice constant of 4.779 mm or more and 5.000 mm or less and a film thickness of at least 0.005 μm. It is the gist of what is being done.
[0012]
The component of the oxide film is preferably Cr ₂ O ₃ , (Fe, Cr) ₂ O ₃ or (Al, Cr) ₂ O ₃ , and the oxide film is formed of the (Fe, Cr). ) ₂ O _3, it is preferable that (Fe _x , Cr _(1-x) ) ₂ O ₃ (where x is 0 ≦ x ≦ 0.54), and (Al, Cr) ₂ In the case of O _3, it is preferable that (Al _y , Cr _(1-y) ) ₂ O ₃ (where y is 0 ≦ y ≦ 0.90).
[0013]
Furthermore, on the other surface of the oxide film having the corundum structure, a composite nitride film of Al and one or more elements selected from the group consisting of Ti, Cr, and V, with or without an intermediate layer, is formed. It is preferable that a film made of (Al _z , Cr _(1-z) ) N (where z is 0 ≦ z ≦ 0.90) is formed as the intermediate layer.
[0014]
Further, the present invention includes an abrasion-resistant member in which any one of the above hard films is formed on a base material with the aluminum oxide having the corundum structure as a surface side.
[0015]
The method for producing a wear-resistant member defined in the present invention includes a step of forming the corundum-structured aluminum oxide, oxide film, composite nitride film, and intermediate layer formed as necessary by physical vapor deposition. It has a gist. In carrying out this manufacturing method, in order to form the (Al _y , Cr _(1-y) ) ₂ O ₃ (where y is 0 ≦ y ≦ 0.90) film, the (Al _{z 1} , Cr _(1-z) ) N (where z is 0 ≦ z ≦ 0.90) After forming a film, at least part of the surface layer side is oxidized to be converted into an oxide. Preferably, the oxidation in this case is desirably performed while maintaining the substrate temperature at 450 ° C. or higher in an oxygen atmosphere. Further, the aluminum oxide film having the corundum structure is preferably formed at a substrate temperature of 300 ° C. or higher.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Under the circumstances as described above, the inventors of the present invention have made extensive studies on a method that can form a corundum-structured aluminum oxide at a low temperature that does not impair the properties of the substrate to be coated. As a result, if a substance having a crystal structure of the same corundum structure as that of aluminum oxide and having a specific lattice constant is formed in advance as an oxide film, the corundum is formed on the oxide film even under low temperature conditions. It has been found that aluminum oxide having a structure can be easily formed. Hereinafter, the oxide film, which is the point of the present invention, and other useful films imparting excellent properties will be described in detail.
[0017]
<Oxide film>
As a material having the same corundum crystal structure as that of the aluminum oxide to be coated and having a lattice constant close to that of aluminum oxide, Cr ₂ O ₃ , Fe ₂ O ₃ , (Fe, Cr) ₂ O ₃ , (Cr, Al) ₂ O ₃ is mentioned. Therefore, when aluminum oxide is formed on these various oxide films, when the lattice constant of the oxide is in the range of 4.779-5.000Å, relatively low temperature conditions (for example, 300 ° C.) Corundum-structured aluminum oxide is formed even at ~ 700 ° C), but even in the case of a corundum-structured oxide film, if the lattice constant is outside the above range, it is found that corundum-structured aluminum oxide is not formed. It was.
[0018]
That is, when the lattice constant of the oxide film exceeds 5.000 mm, the deviation from the lattice constant of the aluminum oxide to be coated becomes large, so that it is difficult to form a corundum-structured aluminum oxide, and a corundum such as a cubic structure is formed. A structure other than the structure is formed. Therefore, the lattice constant of the oxide film must be suppressed to 5.000 mm or less, and is preferably 4.982 mm or less.
[0019]
When a composite oxide of Fe and Cr is used as the oxide film, if the Fe composition ratio exceeds 0.54, the lattice constant of the composite oxide exceeds 5.000Å, and corundum is formed on the oxide film. It becomes impossible to form aluminum oxide having only a structure. Therefore, in the case of using a composite oxide of Fe and Cr as an oxide film, the composition formula _{(Fe x, Cr (1-} x)) 2 O 3, 0 ≦ x ≦ 0.54 and x, more preferably It should be in the range of 0 ≦ x ≦ 0.30.
[0020]
Next, the reason why the lower limit of the lattice constant of the oxide film is specified to 4.779 mm will be described.
[0021]
The lattice constant of Cr ₂ O ₃ and Fe ₂ O _3, since both larger than the lattice constant of Al ₂ O _3, to obtain a smaller oxide film of lattice constant close to of Al ₂ O ₃ is, Cr A composite oxide of Al and Al or a composite oxide of Fe and Al may be used. However, since the complex oxide of Fe and Al has a spinel structure and a pure corundum structure is not formed, it is not suitable for the oxide film of the present invention.
[0022]
In the case of a complex oxide of Cr and Al, the lattice constant decreases as the Al composition ratio increases as described above. However, when the Al composition ratio exceeds 0.90, the corundum-structured oxide film becomes hot. However, at a low temperature, a crystal structure other than the corundum structure is generated, and an oxide film having a pure corundum structure cannot be obtained. Therefore, when the lattice constant of (Al _0.9 , Cr _0.1 ) ₂ O ₃ is 4.779%, which is the lower limit of the lattice constant of the oxide film, and a composite oxide of Cr and Al is used as the oxide film, In the composition formula (Al _y , Cr _(1-y) ) ₂ O ₃ , y is preferably 0 ≦ y ≦ 0.90.
[0023]
In the present invention, the thickness of the oxide film needs to be at least 0.005 μm. This is because when the thickness of the oxide film is smaller than 0.005 μm, a dense oxide film is not formed, and aluminum oxide having only a corundum structure is difficult to be formed. Preferably it is 0.01 micrometer or more, More preferably, it is 0.02 micrometer or more. Further, if the film thickness is too thick, cracking or peeling is likely to occur in the film during cutting. Therefore, the thickness is preferably 10 μm or less, more preferably 5 μm or less, and further preferably 3 μm or less.
[0024]
<Composite nitride film>
In the present invention, in order to further improve the wear resistance when used as a cutting tool or the like, the oxide film is a composite nitride film of one or more elements selected from the group consisting of Ti, Cr and V and Al It is desirable to be formed on the top.
[0025]
In addition, since the said effect is not exhibited when the film thickness of this composite nitride film is too thin, it is preferable to set it as 0.5 micrometer or more, More preferably, it is 1 micrometer or more. Moreover, since a film | membrane will crack at the time of cutting when a film thickness is too thick, it is preferable to set it as 20 micrometers or less, More preferably, it is 10 micrometers or less.
[0026]
<Intermediate layer>
It is also effective to improve the adhesion of the film by providing an Al and Cr nitride layer as an intermediate layer between the base material and the oxide film. As will be described later, the surface layer part of the intermediate layer is oxidized to produce a complex oxide of Al and Cr having a corundum structure [(Al _y , Cr _(1-y) ) ₂ O ₃ (where y is 0 ≦ y ≦ 0.90)] When a film is formed, the nitride layer of Al and Cr has a composition formula (Al _z , Cr _(1-z) ) N, and z is 0 ≦ z ≦ 0.90. Preferably, 0 ≦ z ≦ 0.75.
[0027]
<Aluminum oxide film>
The film thickness of the aluminum oxide having a corundum structure is preferably 0.1 to 20 μm. If the film thickness of the aluminum oxide is less than 0.1 μm, for example, when it is applied to a cutting tool, it wears out early, and the effects such as heat resistance of the aluminum oxide cannot be exhibited. Preferably, it is 0.5 μm or more, more preferably 1 μm or more. On the other hand, when the thickness exceeds 20 μm, internal stress or the like is generated in the film, and cracks or the like are likely to occur.
[0028]
<Film formation method>
The hard film of the present invention can be formed, for example, by the following method. That is, using a PVD apparatus that combines an AIP method and an unbalanced magnetron sputtering method (hereinafter referred to as UBMS method), a Ti-Al alloy target as a solid target for AIP, a Cr target as a solid sputtering target for UBMS method, and By using an Al target and sequentially operating each evaporation source, a composite nitride film of Ti and Al, a chromium oxide film as an oxide film, and an aluminum oxide film with a corundum structure are formed on the substrate surface in a series of film formation processes. Can be sequentially formed into layers.
[0029]
In addition, if a Cr—Fe alloy target or a Cr—Al alloy target is used as the sputter target instead of the Cr target, a complex oxide film of Cr and Fe or a complex oxide film of Cr and Al is used as the oxide film. Obtainable.
[0030]
Further, the intermediate layer can be formed by forming the composite nitride film and then discharging it under a nitrogen atmosphere using an Al-Cr alloy as a target by a PVD method such as an AIP method or a UBMS method.
[0031]
After forming an (Al _z , Cr _(1-z) ) N film (where z is 0 ≦ z ≦ 0.90) as an intermediate layer, an oxide film (Al _y , Cr _{( 1-y)} ) ₂ O ₃ (where y is 0 ≦ y ≦ 0.90) When forming a film, the surface of the intermediate layer is raised by raising the substrate temperature to 450 ° C. or higher in an oxygen atmosphere. By oxidizing the above, the (Al, Cr) ₂ O ₃ layer can be easily formed on the surface layer portion of the intermediate layer. The substrate temperature is preferably 490 ° C. or higher. When the base material is high-speed steel, the base material hardness is lowered when the base material temperature is too high. Therefore, the oxidation is preferably performed at 500 ° C. or lower.
[0032]
In the present invention, by forming the oxide film in advance as described above, the aluminum oxide having a corundum structure can be formed on the oxide film if the substrate temperature is preferably 300 ° C. or higher. The substrate temperature is more preferably 400 ° C. or higher, and further preferably 450 ° C. or higher.
[0033]
Also, if the substrate temperature is too high, the properties of the substrate will be impaired, such as softening when the substrate is high speed steel, so an aluminum oxide film should be formed at a substrate temperature of 500 ° C. or lower. Is preferred.
[0034]
The AIP method and the UBMS method shown as the method for forming the oxide film and the like are examples of the PVD method, and the hard film of the present invention is not limited to the AIP method and the UBMS method, and is widely used as the PVD method. It can be formed by any method used.
[0035]
【Example】
EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited by the following examples, but may be appropriately modified within a range that can meet the purpose described above and below. It is also possible to implement, and they are all included in the technical scope of the present invention.
[0036]
(1) A hard film was formed on a substrate by the method described below. The aluminum oxide having a corundum structure was formed at the substrate temperature shown in Table 1, respectively.
[0037]
(1) No. shown in Table 1 In 1-29 and 31-44, a hard film was formed by a PVD film forming apparatus as schematically illustrated in FIG. That is, a Ti-Al alloy target 6 is set as an AIP target, a Cr target 4 and an Al target 5 are set as a UBMS target, and a cemented carbide chip (SNGN120408) or high-speed steel is used as a base material 2 on a sample holder 3. After the chip was set and the inside of the chamber 1 was evacuated 8 to be in a vacuum state, the following respective films were formed by introducing each gas 7.
[0038]
That is, the inside of the chamber 1 is made a nitrogen gas atmosphere, a Ti-Al alloy target 6 is used to form a titanium aluminum nitride hard film having a film thickness of 3 μm by the AIP method, and then a Cr target 4 is used to mix argon and oxygen. A chromium oxide film was formed by a UBMS method in a gas atmosphere. Furthermore, an aluminum oxide film was formed by an UBMS method using an Al target 5 in a mixed gas atmosphere of argon and oxygen.
[0039]
When forming an (Al, Cr) ₂ O ₃ film or (Fe, Cr) ₂ O ₃ film as an oxide film, instead of the Cr target 4, an Al—Cr alloy target or an Fe—Cr alloy target is used. Was used.
[0040]
No. In Nos. 33, 34 and 39, a composite nitride film (titanium nitride aluminum hard film) was not provided, and an oxide film was formed directly on the substrate surface.
[0041]
(2) No. shown in Table 1 In 30, 45, 46, 48 and 49, a hard film was formed by a PVD film forming apparatus as schematically illustrated in FIG. That is, a Ti—Al alloy target 6 and a Cr—Al alloy target 9 as AIP targets, and an Al target 5 as a UBMS target are set, and a cemented carbide chip (SNGN120408) as a substrate 2 on the sample holder 3. Alternatively, after setting a high-speed steel chip and evacuating the chamber 1 to make a vacuum, the following respective films were formed by introducing each gas 7.
[0042]
That is, the inside of the chamber 1 is made a nitrogen gas atmosphere, a Ti—Al alloy target 6 is used to form a hard titanium aluminum nitride film having a thickness of 3 μm by the AIP method, and then a Cr—Al alloy target 9 is used to form a nitrogen atmosphere. Below, a chromium aluminum nitride film was formed by the AIP method. Thereafter, the substrate on which the film was formed was kept in the apparatus, and oxidized at 450 ° C. in an oxygen atmosphere to form a composite oxide film of Al and Cr. Next, an aluminum oxide film was formed by the UBMS method using the Al target 5 in a mixed gas atmosphere of argon and oxygen. The film thickness of the chromium aluminum nitride film was 0.5 μm.
[0043]
No. 47, an Fe—Cr alloy target is further provided in the chamber 1 of the apparatus as shown in FIG. 2 and a titanium aluminum nitride hard film and a chromium aluminum nitride film are formed in the same manner as described above. In a mixed gas atmosphere, a complex oxide film of iron and chromium was formed by the UBMS method, and then an aluminum oxide film was formed in the same manner as described above.
[0044]
The crystal structure of the aluminum oxide film thus obtained and the lattice constant of the oxide film were identified by a thin film X-ray diffractometer or a transmission electron microscope. The film thicknesses of the aluminum oxide film and the oxide film were measured using a scanning electron microscope or a transmission electron microscope. Furthermore, the components in the film were measured by depth direction analysis by X-ray photoelectron spectroscopy. The results are shown in Table 1.
[0045]
[Table 1]

[0046]
[Table 2]

[0047]
From Table 1 and Table 2, No. 1 to 13, 15 to 20, 23, 25 to 27, 30 to 34, 37 to 39, 41 to 43, and 45 to 47 satisfy the requirements of the present invention, so that the crystal structure is composed of only a corundum structure. An aluminum film could be obtained.
[0048]
In contrast, no. In 14, 21, 22, 24, 28, 29, 35, 36, 40, 44, 48 and 49, an aluminum oxide film consisting only of a corundum structure was not obtained. That is, no. Nos. 21, 22, 28, 40, and 44 are different in that the lattice constant of the oxide film is outside the range defined in the present invention. Nos. 14, 24, 35, and 48 resulted in the formation of a cubic structure in addition to the corundum structure in the produced aluminum oxide film because the oxide film was too thin.
[0049]
As described above, the oxide film is too thin. In 14, 24, 35 and 48, the formed aluminum oxide was a mixed crystal of a corundum structure and a cubic structure. When this was observed in a cross section with a transmission electron microscope, the substrate was sufficiently oxidized film It was found that aluminum oxide having a cubic structure was formed in the portion where the surface of the base material was exposed without being covered with.
[0050]
Furthermore, no. In Nos. 29, 36 and 49, since the aluminum oxide film was formed at a temperature lower than the temperature preferred in the present invention, it is considered that a crystal structure other than the corundum structure was formed.
[0051]
(2) Further, no. Using the chips obtained in 5-10, 14 and 29, a round bar (S50C) was subjected to a turning test under the following conditions, and the depth of crater wear generated on the chips by turning was measured using a surface roughness meter. Measured. The results are shown in Table 3.
Work material: S50C
Cutting speed: 200 m / min.
Feed rate: 0.2 mm / sec.
Cutting depth: 2mm
Dry type (Air blow only)
Cutting time 10 minutes 【0052】
[Table 3]

[0053]
From Table 3, No. It can be seen that Nos. 5 to 10 have a small wear amount and excellent wear resistance because corundum-structured aluminum oxide is formed. On the other hand, no. In Nos. 14 and 29, the amount of wear increased, resulting in poor wear resistance.
[0054]
【The invention's effect】
The present invention is configured as described above, and before the aluminum oxide having a corundum structure is laminated, an oxide film having a corundum structure and having a lattice constant defined by the present invention is formed in advance, thereby providing heat resistance. Thus, it was possible to form aluminum oxide having a corundum structure excellent in wear resistance and the like under low temperature conditions. By realizing such a method for forming a hard film, it was possible to form corundum-structured aluminum oxide on various substrates and to impart excellent heat resistance, wear resistance, and the like.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional explanatory view illustrating a PVD film forming apparatus used for forming a hard film according to the present invention.
FIG. 2 is a schematic cross-sectional explanatory view illustrating another PVD film forming apparatus used for forming a hard film according to the present invention.
[Explanation of symbols]
1 Chamber 2 Base 3 Sample holder 4 Cr target (for UBMS)
5 Al target (for UBMS)
6 Ti-Al alloy target (for AIP)
7 Introduction gas (nitrogen, oxygen, argon)
8 Exhaust 9 Cr target or Cr-Al alloy target (for AIP)

Claims (11)

A corundum-structured aluminum oxide film is formed on one surface of a corundum-structured oxide film having a lattice constant of 4.779 mm or more and 5.000 mm or less and a film thickness of at least 0.005 μm .
The components of the oxide film is _{(Fe x, Cr (1-} x)) 2 O 3 ( here, x is 0 <x ≦ 0.54) or _{(Al y, Cr (1-} y)) 2 O 3 ( Wherein y is 0 <y ≦ 0.90) . A composite nitride film of one or more elements selected from the group consisting of Ti, Cr and V and Al is formed on the other surface of the oxide film having the corundum structure with or without an intermediate layer. The hard film according to claim 1 . The composite nitride film is formed through the intermediate layer, and the intermediate layer is an (Al _z , Cr _(1-z) ) N (where z is 0 ≦ z ≦ 0.90) film. 2. Hard coating according to 2 . The wear-resistant member, wherein the hard coating film according to any one of claims 1 to 3 is formed on a substrate with the corundum-structured aluminum oxide film as a surface side. 3. The method for producing a wear-resistant member , wherein the hard coating according to claim 2 is formed on a substrate with the aluminum oxide coating having the corundum structure as a surface side, the aluminum coating having the corundum structure and the oxide coating. A method for producing a wear-resistant member, comprising a step of forming a composite nitride film and, if necessary, an intermediate layer formed by physical vapor deposition. Component of the oxide film to a hard coating according to claim _{3 (Al y, Cr (1} -y)) 2 O 3 ( however, y is 0 <y ≦ 0.90) is a hard film is A method for producing a wear-resistant member formed on a base material with the aluminum oxide film having the corundum structure as a surface side , wherein (Al _z , Cr _(1-z) ) N (where z is 0) <after forming the z ≦ 0.90) film, wherein the oxidation of the surface of _{(Al y, Cr (1-} y)) 2 O 3 ( however, y is comprised from 0 <y ≦ 0.90) the method for producing a wear-resistant member characterized by comprising the step of forming an oxide film. The _{(Al z, Cr (1-} z)) N ( provided that, z is 0 <z ≦ 0.90) oxidation of the film surface, according to claim 6 carried out at a substrate temperature of 450 ° C. or higher under an oxygen atmosphere A method for manufacturing a wear-resistant member. The method for producing a wear-resistant member according to any one of claims 5 to 7, wherein the aluminum oxide film having a corundum structure is formed at a substrate temperature of 300 ° C or higher. A corundum-structured aluminum oxide film is formed on one surface of a corundum-structured oxide film having a lattice constant of 4.779 mm or more and 5.000 mm or less and a film thickness of at least 0.005 μm.
The oxide film component is Cr ₂ O _Three And
A composite nitride film of one or more elements selected from the group consisting of Ti, Cr, and V and Al is formed on the other surface of the oxide film having the corundum structure with or without an intermediate layer. Hard film characterized by having A corundum-structured aluminum oxide film is formed on one surface of a corundum-structured oxide film having a lattice constant of 4.779 mm or more and 5.000 mm or less and a film thickness of at least 0.005 μm, and the oxide The component of the film is (Al _y , Cr _(1-y) ) ₂ O _Three (Where y is 0 ≦ y ≦ 0.90) is formed on the base material with the aluminum oxide film having the corundum structure as the surface side, and the hard film is formed of the base material and the oxide film. In between (Al _z , Cr _(1-z) ) N (where z is 0 ≦ z ≦ 0.90) a method for producing a wear-resistant member provided with an intermediate layer comprising a film,
Said (Al _z , Cr _(1-z) ) N (where z is 0 ≦ z ≦ 0.90) After forming the film, the surface is oxidized to form the (Al _y , Cr _(1-y) ) ₂ O _Three (Wherein y is 0 ≦ y ≦ 0.90), and includes a step of forming an oxide film. The wear resistant member has a composite nitride film of Al and one or more elements selected from the group consisting of Ti, Cr, and V via an intermediate layer on the other surface of the oxide film having the corundum structure. The manufacturing method of the wear-resistant member according to claim 10 formed.

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