JP4497202B2 - マイクロフラップ型ナノ・マイクロ機械素子、及びその製造方法 - Google Patents
マイクロフラップ型ナノ・マイクロ機械素子、及びその製造方法 Download PDFInfo
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- JP4497202B2 JP4497202B2 JP2007506859A JP2007506859A JP4497202B2 JP 4497202 B2 JP4497202 B2 JP 4497202B2 JP 2007506859 A JP2007506859 A JP 2007506859A JP 2007506859 A JP2007506859 A JP 2007506859A JP 4497202 B2 JP4497202 B2 JP 4497202B2
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- 238000004519 manufacturing process Methods 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000000233 ultraviolet lithography Methods 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000105 evaporative light scattering detection Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2457—Clamped-free beam resonators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Micromachines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
本発明のその他の目的及び利点は以下の記載より明らかとなろう。
1a、1b 下部電極層
1b’ 下部電極層ドープコート
2 上部電極層
2’ 上部電極層材料
3 誘電体層
3’ 誘電体層材料
4 層状体
4a 第1本体部分
4b 第2本体部分
5 水平陥凹部
5a ギャップ
6 張出部
6a マイクロフラップ
7 底部基板
8 シリコン基板
A 層状構造
B 層状構造
C 層状構造
bl 本体長
bl’ 第2本体部分長
bl’’ 第1本体部分長
bt 本体厚
bw 本体幅
fl マイクロフラップ長
ft マイクロフラップ厚
fw マイクロフラップ幅
gt ギャップ厚
lt 下部電極厚
ot 誘電体層厚
ut 上部層厚
Claims (1)
- 基板上に形成された第1の電極層と、
第2の電極層と、
前記第1の電極層と前記第2の電極層とに挟持された誘電体層とを有し、
前記誘電体層と前記第2の電極層とは、
第1本体部と該第1本体部に隣接する第2本体部を有する層状体を形成し、
前記第2本体部は、前記誘電体層の側部に水平陥凹部を有し、
前記第1本体部は、前記第2本体部から前記第1本体部方向に、前記第2の電極層が水平に、均一幅で延在する張出部を有し、
該張出部と第1の電極層とでギャップを形成して、
前記張出部が、マイクロフラップ幅、マイクロフラップ厚さ、及びマイクロフラップ長の共振マイクロフラップを形成して成り、
前記第1本体部と前記第2本体部との隣接面方向の幅において、前記第1本体部の幅は、前記第2本体部の幅より大きく、前記第1本体部の前記第2の電極層の幅と前記第1本体部の前記誘電体層の幅とが等しいことを特徴とするマイクロフラップ型ナノ・マイクロ機械共振子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04076003A EP1585219A1 (en) | 2004-04-06 | 2004-04-06 | A micro-flap type nano/micro mechanical device and fabrication method thereof |
PCT/IB2005/000895 WO2005099087A1 (en) | 2004-04-06 | 2005-04-06 | A μ-FLAP TYPE NANO/MICRO MECHANICAL DEVICE AND FABRICATION METHOD THEREOF |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007533186A JP2007533186A (ja) | 2007-11-15 |
JP4497202B2 true JP4497202B2 (ja) | 2010-07-07 |
Family
ID=34896058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007506859A Expired - Fee Related JP4497202B2 (ja) | 2004-04-06 | 2005-04-06 | マイクロフラップ型ナノ・マイクロ機械素子、及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7705693B2 (ja) |
EP (1) | EP1585219A1 (ja) |
JP (1) | JP4497202B2 (ja) |
CN (1) | CN100555852C (ja) |
WO (1) | WO2005099087A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1777815A1 (en) | 2005-10-18 | 2007-04-25 | Seiko Epson Corporation | Flap resonator, method of manufacturing a flap resonator, and integrated circuit including the flap resonator |
EP1777816A1 (en) | 2005-10-18 | 2007-04-25 | Seiko Epson Corporation | MEMS resonator and method of enhancing an output signal current from a MEMS resonator |
KR101330140B1 (ko) | 2007-12-21 | 2013-11-18 | 재단법인서울대학교산학협력재단 | 공진 수단의 구동 장치 및 방법 |
JP2010166201A (ja) * | 2009-01-14 | 2010-07-29 | Seiko Epson Corp | Memsデバイス及びその製造方法 |
JP2012129605A (ja) | 2010-12-13 | 2012-07-05 | Seiko Epson Corp | Mems振動子、発振器、およびmems振動子の製造方法 |
JP2012209885A (ja) | 2011-03-30 | 2012-10-25 | Seiko Epson Corp | Mems振動子および発振器 |
JP2013030905A (ja) | 2011-07-27 | 2013-02-07 | Seiko Epson Corp | Mems振動子および発振器 |
DE102011119660B4 (de) * | 2011-11-29 | 2014-12-11 | Epcos Ag | Mikroakustisches Bauelement mit Wellenleiterschicht |
JP2013211650A (ja) * | 2012-03-30 | 2013-10-10 | Seiko Epson Corp | Mems振動子およびmems振動子の製造方法 |
JP2014072876A (ja) | 2012-10-02 | 2014-04-21 | Seiko Epson Corp | Mems素子および発振器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023503A (en) * | 1990-01-03 | 1991-06-11 | Motorola, Inc. | Super high frequency oscillator/resonator |
JPH08102544A (ja) | 1994-09-29 | 1996-04-16 | Yoichi Sato | 金属の陽極処理膜による微小機械装置 |
US5578976A (en) | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
JPH10290036A (ja) | 1997-04-11 | 1998-10-27 | Nissan Motor Co Ltd | 表面マイクロマシンの製造方法 |
FI20000339A (fi) * | 2000-02-16 | 2001-08-16 | Nokia Mobile Phones Ltd | Mikromekaaninen säädettävä kondensaattori ja integroitu säädettävä resonaattori |
JP3454239B2 (ja) * | 2000-08-31 | 2003-10-06 | 株式会社村田製作所 | 弾性表面波フィルタ |
US6448103B1 (en) * | 2001-05-30 | 2002-09-10 | Stmicroelectronics, Inc. | Method for making an accurate miniature semiconductor resonator |
JP3890952B2 (ja) * | 2001-10-18 | 2007-03-07 | ソニー株式会社 | 容量可変型キャパシタ装置 |
JP3755460B2 (ja) * | 2001-12-26 | 2006-03-15 | ソニー株式会社 | 静電駆動型mems素子とその製造方法、光学mems素子、光変調素子、glvデバイス、レーザディスプレイ、及びmems装置 |
US6714105B2 (en) * | 2002-04-26 | 2004-03-30 | Motorola, Inc. | Micro electro-mechanical system method |
JP4007115B2 (ja) * | 2002-08-09 | 2007-11-14 | ソニー株式会社 | マイクロマシンおよびその製造方法 |
JP4007172B2 (ja) * | 2002-12-03 | 2007-11-14 | ソニー株式会社 | マイクロマシンおよびその製造方法 |
-
2004
- 2004-04-06 EP EP04076003A patent/EP1585219A1/en not_active Withdrawn
-
2005
- 2005-04-06 CN CN200580018234.8A patent/CN100555852C/zh not_active Expired - Fee Related
- 2005-04-06 JP JP2007506859A patent/JP4497202B2/ja not_active Expired - Fee Related
- 2005-04-06 US US11/547,530 patent/US7705693B2/en not_active Expired - Fee Related
- 2005-04-06 WO PCT/IB2005/000895 patent/WO2005099087A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1585219A1 (en) | 2005-10-12 |
JP2007533186A (ja) | 2007-11-15 |
WO2005099087A1 (en) | 2005-10-20 |
US7705693B2 (en) | 2010-04-27 |
CN100555852C (zh) | 2009-10-28 |
US20070279140A1 (en) | 2007-12-06 |
CN1965476A (zh) | 2007-05-16 |
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