JP4481925B2 - マルチ真空蒸着システム - Google Patents
マルチ真空蒸着システム Download PDFInfo
- Publication number
- JP4481925B2 JP4481925B2 JP2005361051A JP2005361051A JP4481925B2 JP 4481925 B2 JP4481925 B2 JP 4481925B2 JP 2005361051 A JP2005361051 A JP 2005361051A JP 2005361051 A JP2005361051 A JP 2005361051A JP 4481925 B2 JP4481925 B2 JP 4481925B2
- Authority
- JP
- Japan
- Prior art keywords
- wall
- evaporation source
- crucible
- heating
- vacuum deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Description
0<(t−1)/s≦0.5を満足する式、
θ=360゜×(t−1)/sで回転する。
θ=360゜×(t−1)/s ・・・式(1)
で、ここで前記式(1)は、
0<(t−1)/s≦0.5 ・・・式(2)
を満足しなければならない。
この時、前記総蒸発源の数sは、
s≧2
を満足して、また前記自然数tは、
1<t≦s
を満足しなければならない。
20 基板
100 蒸着装置
110 蒸発源
111 るつぼ
112 加熱体
113 電源端子
114 ケース
114a 内壁
114b 外壁
114c シール材
120 回転部
122 ベアリング
130 固定ハウジング
132 蒸着遮断板
140 電源部
150 リフレクター
150a 第1のリフレクター
150b 第2のリフレクター
160 閉鎖空間
162 冷却水
164 供給管
166 排出管
170 冷却カバー
190 冷却水誘導管
Claims (7)
- ケースの内部にるつぼと該るつぼを加熱する加熱体とを内蔵してなる蒸発源と、
該蒸発源が移動されてある位置に停止されると前記蒸発源に収容された蒸着物質が拡散排出されて前方の基板に蒸着されるように前記蒸発源を加熱する加熱装置と、
前記蒸発源が加熱される間に外部に伝達される熱が遮断されるように前記蒸発源に設置された冷却装置と、が具備され、
前記冷却装置は、前記るつぼと前記加熱体とを収容したケースが内壁及び外壁の二重構造を有し、前記内壁及び外壁の間の閉鎖された閉鎖空間に、供給管と排出管を通じて冷却水が供給及び排出され、さらに、これら供給管と排出管は、前記外壁の下部と上部にそれぞれ配置されるとともに、前記閉鎖空間内の隔壁により相互隔離されるように、かつ該隔壁と隣接する位置に配置されたことを特徴とするマルチ真空蒸着システム。 - 前記冷却装置には、前記加熱体及び前記るつぼの熱が遮断されるように前記るつぼの外縁に設置された前記加熱体を囲むように少なくとも一つのリフレクターが配置されたことを特徴とする請求項1に記載のマルチ真空蒸着システム。
- 前記閉鎖空間は、前記内壁と外壁、及び、該内壁と外壁の上部と下部に設置されたシール材によって形成されたことを特徴とする請求項1に記載のマルチ真空蒸着システム。
- 前記外壁の下部と上部に前記供給管と前記排出管が設置されて、前記供給管と前記排出管は相互対称する位置に設置されたことを特徴とする請求項1に記載のマルチ真空蒸着システム。
- 前記閉鎖空間には前記外壁の下部と上部に設置された前記供給管と前記排出管が両端部に装着された少なくとも一つの冷却誘導管が配置されたことを特徴とする請求項1に記載のマルチ真空蒸着システム。
- 前記るつぼとケースとの間の開放された上部を塞ぐためにケースに支持されて前記るつぼ側に延長されてなる冷却カバーが設置されたことを特徴とする請求項2に記載のマルチ真空蒸着システム。
- 蒸発源が加熱される間に外部に伝達される熱を遮断する冷却装置が設置されて移動される多数個の蒸発源と、
該蒸発源の中でn番目の蒸発源が第1の加熱装置によって本加熱されて、前記蒸発源の中で本加熱を待つn−1番目の蒸発源が第2の加熱装置によって予備加熱される加熱装置と、
が具備され、
前記冷却装置は、前記るつぼと前記加熱体とを収容したケースが内壁及び外壁の二重構造を有し、前記内壁及び外壁の間の閉鎖された閉鎖空間に、供給管と排出管を通じて冷却水が供給及び排出され、さらに、これら供給管と排出管は、前記外壁の下部と上部にそれぞれ配置されるとともに、前記閉鎖空間内の隔壁により相互隔離されるように、かつ該隔壁と隣接する位置に配置されたことを特徴とするマルチ真空蒸着システム。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050019645A KR100671673B1 (ko) | 2005-03-09 | 2005-03-09 | 다중 진공증착장치 및 제어방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006249575A JP2006249575A (ja) | 2006-09-21 |
| JP4481925B2 true JP4481925B2 (ja) | 2010-06-16 |
Family
ID=36971275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005361051A Expired - Fee Related JP4481925B2 (ja) | 2005-03-09 | 2005-12-14 | マルチ真空蒸着システム |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8025735B2 (ja) |
| JP (1) | JP4481925B2 (ja) |
| KR (1) | KR100671673B1 (ja) |
| CN (1) | CN1854332A (ja) |
| TW (1) | TWI339684B (ja) |
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| CN1995445B (zh) * | 2006-12-29 | 2010-08-11 | 友达光电股份有限公司 | 真空蒸镀机台的蒸镀源装置及其蒸镀方法 |
| WO2009060739A1 (ja) * | 2007-11-05 | 2009-05-14 | Ulvac, Inc. | 蒸着源、有機el素子の製造装置 |
| CN101451230B (zh) * | 2007-11-28 | 2011-06-01 | 上海华虹Nec电子有限公司 | 金属蒸发设备 |
| KR100941131B1 (ko) * | 2007-12-13 | 2010-02-09 | 한국표준과학연구원 | 초고진공용 다중 전자빔 증착 장치 |
| TWI386499B (zh) * | 2007-12-14 | 2013-02-21 | Hon Hai Prec Ind Co Ltd | 蒸鍍裝置 |
| WO2010019213A2 (en) | 2008-08-11 | 2010-02-18 | Veeco Instruments Inc. | Vacuum deposition sources having heated effusion orifices |
| US8729435B2 (en) * | 2008-12-01 | 2014-05-20 | Inductotherm Corp. | Purification of silicon by electric induction melting and directional partial cooling of the melt |
| US20100285218A1 (en) * | 2008-12-18 | 2010-11-11 | Veeco Instruments Inc. | Linear Deposition Source |
| WO2011065998A1 (en) * | 2008-12-18 | 2011-06-03 | Veeco Instruments Inc. | Linear deposition source |
| US20100159132A1 (en) * | 2008-12-18 | 2010-06-24 | Veeco Instruments, Inc. | Linear Deposition Source |
| JP5346268B2 (ja) * | 2009-10-09 | 2013-11-20 | 株式会社アルバック | 蒸着装置及び蒸着方法 |
| EP2507403A4 (en) * | 2009-11-30 | 2013-10-23 | Veeco Instr Inc | LINEAR DEPOSIT SOURCE |
| DE102010017896A1 (de) * | 2010-04-21 | 2011-10-27 | Ald Vacuum Technologies Gmbh | Vorrichtung und Verfahren zum Beschichten von Substraten nach dem EB/PVD-Verfahren |
| US20130160712A1 (en) * | 2010-09-01 | 2013-06-27 | Sharp Kabushiki Kaisha | Evaporation cell and vacuum deposition system the same |
| JP2012089591A (ja) * | 2010-10-18 | 2012-05-10 | Hitachi High-Technologies Corp | 真空処理装置及び真空処理方法 |
| KR101245532B1 (ko) * | 2010-12-30 | 2013-03-21 | 엘아이지에이디피 주식회사 | 박막 증착 장치 |
| JP2012207263A (ja) * | 2011-03-29 | 2012-10-25 | Hitachi High-Technologies Corp | 蒸着方法および蒸着装置 |
| JP6061944B2 (ja) * | 2011-12-09 | 2017-01-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 加熱管を冷却する熱交換器、蒸発器の加熱管、加熱管を備える蒸発器および蒸発器の加熱管を冷却する方法 |
| KR101450598B1 (ko) * | 2012-01-04 | 2014-10-15 | 에스엔유 프리시젼 주식회사 | 연속박막증착장치 |
| KR20140078284A (ko) * | 2012-12-17 | 2014-06-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 포함하는 증착 장치 |
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| KR102155735B1 (ko) * | 2013-07-25 | 2020-09-15 | 삼성디스플레이 주식회사 | 증착장치용 증착원 |
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-
2005
- 2005-03-09 KR KR1020050019645A patent/KR100671673B1/ko not_active Expired - Fee Related
- 2005-12-14 JP JP2005361051A patent/JP4481925B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-08 TW TW095107740A patent/TWI339684B/zh not_active IP Right Cessation
- 2006-03-08 US US11/370,033 patent/US8025735B2/en not_active Expired - Lifetime
- 2006-03-09 CN CNA2006100916386A patent/CN1854332A/zh active Pending
-
2011
- 2011-08-23 US US13/215,434 patent/US8623455B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060097087A (ko) | 2006-09-13 |
| US20060204648A1 (en) | 2006-09-14 |
| CN1854332A (zh) | 2006-11-01 |
| TWI339684B (en) | 2011-04-01 |
| US8025735B2 (en) | 2011-09-27 |
| JP2006249575A (ja) | 2006-09-21 |
| TW200632118A (en) | 2006-09-16 |
| US20110305834A1 (en) | 2011-12-15 |
| KR100671673B1 (ko) | 2007-01-19 |
| US8623455B2 (en) | 2014-01-07 |
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