JP4478352B2 - プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法 Download PDF

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Publication number
JP4478352B2
JP4478352B2 JP2001097001A JP2001097001A JP4478352B2 JP 4478352 B2 JP4478352 B2 JP 4478352B2 JP 2001097001 A JP2001097001 A JP 2001097001A JP 2001097001 A JP2001097001 A JP 2001097001A JP 4478352 B2 JP4478352 B2 JP 4478352B2
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plasma processing
plasma
microwave
processing apparatus
slots
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JP2001345312A5 (https=
JP2001345312A (ja
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伸昌 鈴木
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Canon Inc
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Canon Inc
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  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
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JP2001097001A 2000-03-29 2001-03-29 プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法 Expired - Lifetime JP4478352B2 (ja)

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JP2001097001A JP4478352B2 (ja) 2000-03-29 2001-03-29 プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法

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JP2000091709 2000-03-29
JP2000-91709 2000-03-29
JP2001097001A JP4478352B2 (ja) 2000-03-29 2001-03-29 プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法

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JP2001345312A JP2001345312A (ja) 2001-12-14
JP2001345312A5 JP2001345312A5 (https=) 2008-05-22
JP4478352B2 true JP4478352B2 (ja) 2010-06-09

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3874726B2 (ja) 2001-01-18 2007-01-31 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ生成方法
JP3625197B2 (ja) 2001-01-18 2005-03-02 東京エレクトロン株式会社 プラズマ装置およびプラズマ生成方法
JP5312411B2 (ja) * 2003-02-14 2013-10-09 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
CN100527365C (zh) * 2003-03-25 2009-08-12 东京毅力科创株式会社 等离子成膜方法以及等离子成膜装置
JP4369264B2 (ja) * 2003-03-25 2009-11-18 東京エレクトロン株式会社 プラズマ成膜方法
JP2006040609A (ja) * 2004-07-23 2006-02-09 Naohisa Goto プラズマ処理装置および方法、並びにフラットパネルディスプレイ装置の製造方法
JP2009224455A (ja) * 2008-03-14 2009-10-01 Tokyo Electron Ltd 平面アンテナ部材およびこれを備えたプラズマ処理装置
US9928993B2 (en) 2015-01-07 2018-03-27 Applied Materials, Inc. Workpiece processing chamber having a rotary microwave plasma antenna with slotted spiral waveguide

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