JP4478302B2 - 干渉装置及びそれを搭載した半導体露光装置 - Google Patents
干渉装置及びそれを搭載した半導体露光装置 Download PDFInfo
- Publication number
- JP4478302B2 JP4478302B2 JP2000199435A JP2000199435A JP4478302B2 JP 4478302 B2 JP4478302 B2 JP 4478302B2 JP 2000199435 A JP2000199435 A JP 2000199435A JP 2000199435 A JP2000199435 A JP 2000199435A JP 4478302 B2 JP4478302 B2 JP 4478302B2
- Authority
- JP
- Japan
- Prior art keywords
- path length
- optical path
- fizeau
- light beam
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02055—Reduction or prevention of errors; Testing; Calibration
- G01B9/02056—Passive reduction of errors
- G01B9/02057—Passive reduction of errors by using common path configuration, i.e. reference and object path almost entirely overlapping
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02055—Reduction or prevention of errors; Testing; Calibration
- G01B9/02062—Active error reduction, i.e. varying with time
- G01B9/02064—Active error reduction, i.e. varying with time by particular adjustment of coherence gate, i.e. adjusting position of zero path difference in low coherence interferometry
- G01B9/02065—Active error reduction, i.e. varying with time by particular adjustment of coherence gate, i.e. adjusting position of zero path difference in low coherence interferometry using a second interferometer before or after measuring interferometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
- G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000199435A JP4478302B2 (ja) | 2000-06-30 | 2000-06-30 | 干渉装置及びそれを搭載した半導体露光装置 |
| US09/893,636 US6661522B2 (en) | 2000-06-30 | 2001-06-29 | Interference system and semiconductor exposure apparatus having the same |
| US10/693,880 US6961132B2 (en) | 2000-06-30 | 2003-10-28 | Interference system and semiconductor exposure apparatus having the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000199435A JP4478302B2 (ja) | 2000-06-30 | 2000-06-30 | 干渉装置及びそれを搭載した半導体露光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002013908A JP2002013908A (ja) | 2002-01-18 |
| JP2002013908A5 JP2002013908A5 (enExample) | 2007-08-16 |
| JP4478302B2 true JP4478302B2 (ja) | 2010-06-09 |
Family
ID=18697454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000199435A Expired - Lifetime JP4478302B2 (ja) | 2000-06-30 | 2000-06-30 | 干渉装置及びそれを搭載した半導体露光装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US6661522B2 (enExample) |
| JP (1) | JP4478302B2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4478302B2 (ja) * | 2000-06-30 | 2010-06-09 | キヤノン株式会社 | 干渉装置及びそれを搭載した半導体露光装置 |
| DE10123844A1 (de) * | 2001-04-09 | 2002-10-17 | Bosch Gmbh Robert | Interferometrische Messvorrichtung |
| JP2004271305A (ja) * | 2003-03-07 | 2004-09-30 | Canon Inc | 測定装置、露光装置及びデバイス製造方法 |
| JP4387359B2 (ja) * | 2003-09-26 | 2009-12-16 | カール・ツァイス・エスエムティー・アーゲー | 光学特性の測定方法、及び波面検出系を備えた投影露光システム |
| JP2005156403A (ja) * | 2003-11-27 | 2005-06-16 | Canon Inc | シアリング干渉を利用した測定方法及び装置、それを利用した露光方法及び装置、並びに、デバイス製造方法 |
| JP2006112903A (ja) * | 2004-10-14 | 2006-04-27 | Olympus Corp | 紫外光光源ユニット及びこれを用いた干渉計並びに干渉計の調整方法 |
| JP2006319064A (ja) * | 2005-05-11 | 2006-11-24 | Canon Inc | 測定装置、露光方法及び装置 |
| JP2007036193A (ja) * | 2005-06-23 | 2007-02-08 | Canon Inc | 露光装置 |
| JP2008108852A (ja) | 2006-10-24 | 2008-05-08 | Canon Inc | 投影露光装置、光学部品及びデバイス製造方法 |
| JP5932306B2 (ja) * | 2011-11-16 | 2016-06-08 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| CN102749188B (zh) * | 2012-07-19 | 2014-12-17 | 苏州慧利仪器有限责任公司 | 应用于光学系统的检测装置 |
| CN103697822B (zh) * | 2013-12-26 | 2016-09-14 | 北京信息科技大学 | 光学三角测头的光路系统 |
| CN103940588B (zh) * | 2014-03-21 | 2016-06-29 | 哈尔滨工程大学 | 基于光学相干偏振测量的偏振衰落抑制装置的抑制方法 |
| CN103900797B (zh) * | 2014-03-28 | 2016-05-04 | 哈尔滨工程大学 | 带有光程扫描位置和速度校正的光学相干域偏振测量装置 |
| CN104006948B (zh) * | 2014-06-12 | 2016-06-22 | 天津大学 | 基于多峰分裂周期解调保偏光纤偏振耦合点位置的方法 |
| CN105758329A (zh) * | 2014-12-18 | 2016-07-13 | 财团法人金属工业研究发展中心 | 光学式表面轮廓扫描系统 |
| CN116105594A (zh) * | 2022-12-20 | 2023-05-12 | 上海现代先进超精密制造中心有限公司 | 一种适应检测面反射率实现高干涉对比度的菲索干涉仪 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4627731A (en) * | 1985-09-03 | 1986-12-09 | United Technologies Corporation | Common optical path interferometric gauge |
| US4938596A (en) * | 1989-01-05 | 1990-07-03 | The University Of Rochester | Phase conjugate, common path interferometer |
| US5815268A (en) * | 1996-06-28 | 1998-09-29 | Raytheon Company | Lithographic lens wavefront and distortion tester |
| US5898501A (en) * | 1996-07-25 | 1999-04-27 | Nikon Corporation | Apparatus and methods for measuring wavefront aberrations of a microlithography projection lens |
| US6650421B2 (en) * | 1997-08-26 | 2003-11-18 | Nikon Corporation | Method and apparatus for inspecting optical device |
| US6037579A (en) * | 1997-11-13 | 2000-03-14 | Biophotonics Information Laboratories, Ltd. | Optical interferometer employing multiple detectors to detect spatially distorted wavefront in imaging of scattering media |
| US6312373B1 (en) * | 1998-09-22 | 2001-11-06 | Nikon Corporation | Method of manufacturing an optical system |
| JP3796368B2 (ja) * | 1999-03-24 | 2006-07-12 | キヤノン株式会社 | 投影露光装置 |
| JP3796369B2 (ja) * | 1999-03-24 | 2006-07-12 | キヤノン株式会社 | 干渉計を搭載した投影露光装置 |
| US6266147B1 (en) * | 1999-10-14 | 2001-07-24 | The Regents Of The University Of California | Phase-shifting point diffraction interferometer phase grating designs |
| JP4478302B2 (ja) * | 2000-06-30 | 2010-06-09 | キヤノン株式会社 | 干渉装置及びそれを搭載した半導体露光装置 |
-
2000
- 2000-06-30 JP JP2000199435A patent/JP4478302B2/ja not_active Expired - Lifetime
-
2001
- 2001-06-29 US US09/893,636 patent/US6661522B2/en not_active Expired - Fee Related
-
2003
- 2003-10-28 US US10/693,880 patent/US6961132B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002013908A (ja) | 2002-01-18 |
| US20040085548A1 (en) | 2004-05-06 |
| US6961132B2 (en) | 2005-11-01 |
| US20020024005A1 (en) | 2002-02-28 |
| US6661522B2 (en) | 2003-12-09 |
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