JP4476484B2 - イオンビームの空間電荷を中和するためのイオンビーム装置及び方法 - Google Patents

イオンビームの空間電荷を中和するためのイオンビーム装置及び方法 Download PDF

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Publication number
JP4476484B2
JP4476484B2 JP2000548903A JP2000548903A JP4476484B2 JP 4476484 B2 JP4476484 B2 JP 4476484B2 JP 2000548903 A JP2000548903 A JP 2000548903A JP 2000548903 A JP2000548903 A JP 2000548903A JP 4476484 B2 JP4476484 B2 JP 4476484B2
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Japan
Prior art keywords
ion beam
magnet
filament
source
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2000548903A
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English (en)
Japanese (ja)
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JP2002515634A (ja
JP2002515634A5 (enExample
Inventor
ジョナサン， ジェラルド イングランド，
アンドリュー ホームズ，
デイヴィッド アーマー，
デン バーグ， ジャープ ヴァン
ステファン モファット，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Publication of JP2002515634A publication Critical patent/JP2002515634A/ja
Publication of JP2002515634A5 publication Critical patent/JP2002515634A5/ja
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Publication of JP4476484B2 publication Critical patent/JP4476484B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Tubes For Measurement (AREA)
JP2000548903A 1998-05-12 1999-05-12 イオンビームの空間電荷を中和するためのイオンビーム装置及び方法 Expired - Lifetime JP4476484B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9810144.7 1998-05-12
GB9810144A GB2337632B (en) 1998-05-12 1998-05-12 Ion beam apparatus and a method for neutralising space charge in an ion beam
PCT/GB1999/001500 WO1999059182A1 (en) 1998-05-12 1999-05-12 Ion beam apparatus and a method for neutralising space charge in an ion beam

Publications (3)

Publication Number Publication Date
JP2002515634A JP2002515634A (ja) 2002-05-28
JP2002515634A5 JP2002515634A5 (enExample) 2009-09-03
JP4476484B2 true JP4476484B2 (ja) 2010-06-09

Family

ID=10831903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000548903A Expired - Lifetime JP4476484B2 (ja) 1998-05-12 1999-05-12 イオンビームの空間電荷を中和するためのイオンビーム装置及び方法

Country Status (5)

Country Link
US (1) US6515408B1 (enExample)
EP (1) EP1078387A1 (enExample)
JP (1) JP4476484B2 (enExample)
GB (1) GB2337632B (enExample)
WO (1) WO1999059182A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6633114B1 (en) * 2000-01-12 2003-10-14 Iowa State University Research Foundation, Inc. Mass spectrometer with electron source for reducing space charge effects in sample beam
US6462817B1 (en) 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7196782B2 (en) 2000-09-20 2007-03-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thin film characteristic and an electrical property of a specimen
US6762423B2 (en) * 2002-11-05 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets
US20040227106A1 (en) * 2003-05-13 2004-11-18 Halling Alfred M. System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway
US6879109B2 (en) * 2003-05-15 2005-04-12 Axcelis Technologies, Inc. Thin magnetron structures for plasma generation in ion implantation systems
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
US7402816B2 (en) * 2004-11-19 2008-07-22 Varian Semiconductor Equipment Associates, Inc. Electron injection in ion implanter magnets
US7439526B2 (en) * 2004-12-20 2008-10-21 Varian Semiconductor Equipment Associates, Inc. Beam neutralization in low-energy high-current ribbon-beam implanters
KR100851902B1 (ko) * 2005-01-27 2008-08-13 삼성전자주식회사 이온 중성화 장치
US7005657B1 (en) 2005-02-04 2006-02-28 Varian Semiconductor Equipment Associates, Inc. Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery
SG10201401425RA (en) 2009-04-13 2014-08-28 Applied Materials Inc Modification of magnetic properties of films using ion and neutral beam implantation
JP5634992B2 (ja) * 2009-06-11 2014-12-03 日新イオン機器株式会社 イオンビーム照射装置及びイオンビーム発散抑制方法
EP3261110A1 (en) * 2016-06-21 2017-12-27 Excillum AB X-ray source with ionisation tool

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886971A (en) * 1987-03-13 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Ion beam irradiating apparatus including ion neutralizer
JPS63274051A (ja) * 1987-04-30 1988-11-11 Sumitomo Electric Ind Ltd イオンビ−ム中性化器
JPH07161320A (ja) * 1993-12-10 1995-06-23 Nissin Electric Co Ltd イオンビームの空間電荷中和装置
JPH09180662A (ja) 1995-12-27 1997-07-11 Hitachi Ltd イオンビーム装置

Also Published As

Publication number Publication date
WO1999059182A1 (en) 1999-11-18
GB9810144D0 (en) 1998-07-08
GB2337632B (en) 2002-05-08
JP2002515634A (ja) 2002-05-28
EP1078387A1 (en) 2001-02-28
US6515408B1 (en) 2003-02-04
GB2337632A (en) 1999-11-24

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