WO1999059182A1 - Ion beam apparatus and a method for neutralising space charge in an ion beam - Google Patents
Ion beam apparatus and a method for neutralising space charge in an ion beam Download PDFInfo
- Publication number
- WO1999059182A1 WO1999059182A1 PCT/GB1999/001500 GB9901500W WO9959182A1 WO 1999059182 A1 WO1999059182 A1 WO 1999059182A1 GB 9901500 W GB9901500 W GB 9901500W WO 9959182 A1 WO9959182 A1 WO 9959182A1
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- Prior art keywords
- nominal
- accordance
- ion beam
- magnet
- flight tube
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
Definitions
- the present invention is concerned with neutralising space charge m ion beams travelling through regions of applied magnetic field, and in particular, although not exclusively, with neutralising space charge m an ion beam as it travels through the flight tube of an analysing magnet.
- An analysing magnet generates a substantially uniform magnetic field m its flight tube, causing an ion travelling through the flight tube to follow a curved path in a plane perpendicular to the direction of the magnetic field.
- the analysing magnet can therefore be used to resolve spatially (m a dispersion plane perpendicular to the magnetic field in the flight tube), ions m a beam according to their energy, mass and charge.
- an analysing magnet is used m conjunction with a selection slit to select ions of the required species from an incident beam for implantation in a target semiconductor substrate.
- the incident beam will comprise ions having substantially the same energy, and the magnet is arranged to focus those ions having the desired mass/charge ratio at the selection slit so that only they pass through the slit and go on to impinge on the target.
- analysing magnets are used to resolve ions in a beam according to their mass, energy and charge for separate detection.
- ions in the beam entering the flight tube having the same energy, charge and mass should all be focused by the analysing magnet onto a common line, perpendicular to the dispersion plane, as they exit.
- beam blow up inhibits the spatial resolution of different ions and reduces signal intensity.
- beam blow up inside the magnet is also undesirable. It reduces beam intensity and control accuracy.
- drift space a known technique to neutralise space charge is to flood the region through which the ion beam travels with low energy (typically a few eV) electrons or ions, produced, for example, in a plasma chamber adjacent to the beam flight path. In this drift space the electrons or ions are mobile and can move along and across the beam to minimise beam potential.
- the magnetic field severely limits the mobility of these electrons or ions.
- applied fields of sufficient magnitude to deflect beams of ions with energies in excess of, say, a few keV low energy charged particles, and electrons in particular (with their small mass,) will follow paths having circular projections of very small radii on a plane perpendicular to the direction of applied field.
- the electrons are restricted just to following the magnetic field lines. They have substantially zero mobility perpendicular to the applied field, which in the case of analysing magnets or scanning magnets means that the electrons have substantially zero mobility along the beam axis.
- ion beam apparatus comprising : a analysing magnet including a flight tube for receiving and conveying through the magnet a beam of ions, the magnet being operable to generate a substantially uniform magnetic field in the flight tube to deflect beam ions according to their mass/charge ratio in a dispersion plane perpendicular to the direction of said uniform magnetic field; and a thermionic electron source inside the flight tube, arranged adjacent and outside a nominal cross section of a beam of ions travelling through the magnet and extending along a nominal flight path of a beam travelling through the magnet, the thermionic electron source being further arranged such that the projection of the thermionic electron source on the dispersion plane and the nominal projection on the dispersion plane of an ion beam travelling through the magnet overlap at a plurality of positions along the nominal flight path of the beam.
- magnetic flux generated by the magnet may link the thermionic electron source and a beam of ions travelling through the magnet at a plurality of positions along the flight path, and electrons may be emitted thermionically from the source into the beam at these positions.
- the thermionic electron source is positioned outside the nominal beam envelope to reduce beam contamination resulting from sputtering off the source and the associated erosion of the source .
- electrons emitted from the thermionic electron source will simply follow field lines passing through the source. These field lines will be perpendicular to the dispersion plane of the magnet.
- the thermionic electron source may extend substantially m a plane spaced from and parallel to the dispersion plane.
- the thermionic electron source may therefore be arranged m a plane just above, or just below the nominal beam cross section.
- the thermionic electron source is positioned as close as possible to the nominal beam cross section to maximise the proportion of the flight tube cross section available for beam transport.
- the thermionic electron source comprises a longitudinal electrically conductive filament running along the nominal flight path, above and substantially parallel to the nominal centre of an ion beam travelling through the analysing magnet.
- the filament may therefore be linked to the beam by magnetic flux along a substantial part of its length, and so can be used to emit electrons thermionically to neutralise space charge along a large fraction of the beam's path length through the magnet .
- a plurality of spaced-apart longitudinal filaments may be used to neutralise space charge both along the length and across the width of a beam.
- the thermionic electron source comprises a plurality of transverse filaments, spaced along the flight path, and each extending across the nominal beam width.
- the transverse filaments may for example, be connected to bus bars at opposite sides of the beam, or may be in the form of hairpins, connected to two separate bus bars at the same side of the beam.
- Hairpin geometry provides the advantage that the filaments are less prone to breaking as a result of relative movement of the bus bars, or thermal expansion or contraction.
- the transverse filaments provide the advantage of enabling space charge to be neutralised across the beam at a plurality of locations along its path through the magnet.
- the thermionic electron source may comprise an array or grid of filaments, which may be planar and, for example, be machined or cut from a graphite sheet. Heat shields may be incorporated between the thermionic electron source and the inside of the flight tube to reduce the power needed to maintain the source at a temperature sufficient to yield a desired emission current.
- filament or filaments A wide variety of materials may be used for the filament or filaments , including, for example, tungsten .
- graphite filaments are employed.
- graphite filaments are desirable because carbon sputtered off the filaments as a result of beam strike is a more tolerable beam contaminant than are metal atoms or ions .
- the thermionically emitted electrons may neutralise the beam space charge directly.
- the electrons travel along flux lines into the beam, and once inside contribute to space charge neutralisation.
- thermionic electrons may be used to ionise residual gas atoms or molecules in the partial vacuum of the flight tube.
- the positive ions produced by collisions between the thermionic electrons and the residual atoms or molecules may then contribute to the neutralisation of beam space charge .
- charge-neutral atoms or molecules may deliberately be introduced into the flight tube for ionisation by thermionically emitted electrons.
- a thermionically emitted electron entering the beam will, in general, only remain in the beam if it suffers a collision inside the beam, and as a result loses energy. Otherwise, it will have sufficient energy to escape any beam potential well and will cease to contribute to beam space charge neutralisation.
- Collisions with ions or neutral atoms may be elastic or inelastic. At very low energies, below the thresholds for excitation and ionisation, elastic collisions, which involve very small energy transfers, dominate and the electrons may simply bounce off their collision partners and escape from the beam. Collisions with other electrons would involve greater energy transfer, but the collision cross-section is very small.
- the inelastic collision cross-sections can be increased significantly by increasing the electron energy by applying a negative bias to the thermionic electron source. In preferred embodiments therefore, the thermionic electron source is negatively biased with respect to the flight tube, and this bias voltage may be adjusted to control the energy of the emitted electrons .
- This bias enables the injection of electrons into the beam to be controlled and also provides the energy required to ionise the background (i.e. residual) gas which is important in the case of the space charge neutralisation of negative ion beams.
- Control of electron emission energy is also important m the case of positive ion beams in that slow positive ions produced by collisions between residual, or deliberately introduced, neutral gas atoms or molecules and low energy emitted electrons are an important feature of space charge neutralization because they help to trap electrons. If slow negative ions are produced, an unlikely process in most gases, they too would assist m the neutralization of the positive ion space charge.
- a beam of positive ions may be surrounded by a sheath of negative space charge which provides a potential barrier to the entry of thermionically emitted electrons into the core of the beam. Biasing the source can provide the emitted electrons with sufficient energy to penetrate this barrier. Depending on the particular application, optimum biases in the range 3V to 70V have been found, although optimum values outside this range may be expected.
- one or more electron repellers may be arranged inside the flight tube and outside the nominal beam envelope to reflect electrons escaping the beam back into the beam.
- the electron repellers are negatively biased with respect to the thermionic source, and the bias may be adjustable. In one application, a weak optimum bias of 3V was found.
- the reflectors may be positioned on opposite sides of the beam, and enable the lifetime of electrons in the beam volume to be extended. Energetic electrons which, in the absence of collisions, would not remain in the beam, may be reflected back and forth substantially along field lines linking opposing repellers. The "confinement" of electrons between opposing repellers is possible because the mobility of electrons in directions perpendicular to the applied magnetic field is severely restricted.
- the repellers may be planar, and may comprise graphite sheets.
- the repellers may in fact also function as heat shields.
- ion beam apparatus comprising: an analysing magnet including a flight tube for receiving and conveying through the magnet a beam of ions, the magnet being operable to generate a substantially uniform magnetic field in the flight tube to deflect beam ions according to their mass/charge ratio in a dispersion plane perpendicular to the direction of said uniform magnetic field; and a thermionic electron source inside the flight tube, extending along the nominal flight path of said beam and being arranged inside the nominal envelope of said beam.
- envelope is used to denote the three- dimensional surface nominally bounding the beam, i.e. it represents the nominal extent of the beam. An object placed inside the nominal beam envelope will, therefore, nominally be struck by the beam. An object inside the nominal beam envelope is m the nominal path of the beam.
- the source inside the beam may comprise an array of filaments, which may be planar or may follow a curved surface including the nominal beam centre line.
- the array may extend over at least part of the height and/or the width of the beam to provide more homogeneous space charge neutralisation.
- the array may comprise straight, curved, hair-pin or other geometry filaments, and may be a grid.
- the source may be electrically conductive, may comprise carbon, and/or may comprise refractory material .
- the source may be arranged to be heated electrically, or by the beam, or both.
- the parts of the thermionic electron source inside the nominal beam envelope i.e. these parts nominally subjected to beam strike
- ion beam apparatus comprising: a magnet arranged to generate a magnetic field in a flight tube to deflect a beam of ions travelling through said flight tube; and a thermionic electron source inside said flight tube, extending along the nominal flight path of said beam and arranged to emit electrons thermionically into said beam.
- the source may be arranged outside the nominal beam envelope and further arranged to be linked to the beam at a plurality of positions along its path by magnetic flux generated by the magnet, or the source may be arranged at least partially inside the nominal beam envelope.
- the source may comprise an array of filaments, and the apparatus may further comprise electron repellers, heat shields, and means for biasing the source and the repellers.
- a method of neutralising space charge in a beam of ions travelling m a flight tube through a magnet comprising the steps of: providing a source of thermionic electrons inside the flight tube, adjacent and outside the nominal cross section of the beam and extending along the nominal flight path of the beam; arranging the thermionic electron source to be linked to the beam at a plurality of positions along the nominal flight path by magnetic flux generated by the magnet; and emitting electrons thermionically from the thermionic electron source.
- a method of neutralising space charge in a beam of ions travelling m a flight tube through a magnet comprising the steps of: providing a source of thermionic electrons inside the beam, said source extending along the beam; and emitting electrons thermionically from said source.
- the magnet may, for example, be an analysing magnet , a scanning magnet , or a magnet arranged to deflect the beam for other purposes.
- the term “flight tube” is used simply to denote the region of space inside the magnet through which ion beam travels.
- the "flight tube” in general need have no sides as such, but typically comprises an electrically conductive tube inside which the electric field is arranged to be zero.
- Fig 1 is a schematic plan view of a first embodiment of the present invention:
- Fig. 2 is a schematic perspective view of part of the embodiment shown in Fig 1 ;
- Fig. 3 is a schematic plan view of a further embodiment
- Fig. 4 is a schematic plan view of an embodiment of the present invention
- Fig. 5 is a schematic cross section of part of the embodiment shown in Fig 4 ;
- Fig. 6 is a schematic cross section of part of a further embodiment
- Fig. 7 is a schematic diagram of part of the embodiment of Fig. 6;
- Fig. 8 is a schematic perspective view of part of a further embodiment ;
- Fig. 9 is a schematic diagram of the cross section of part of an embodiment of the present invention.
- FIG 1 shows a highly schematic plan view of an analysing magnet 1 generating a substantially uniform magnet flux density B throughout its flight tube 2.
- the direction of the magnetic flux B is into and perpendicular to the plane of the paper and so the dispersion plane is parallel to the plane of the paper.
- a beam 3 of positive ions enters the flight tube 2 and is deflected by the magnetic field.
- the beam is slightly divergent as it enters the flight tube, and the analysing magnet is arranged to focus only those ions in the beam that have the desired mass/charge ratio on a selection slit 11 n a selection electrode 10 positioned downstream of the exit from the flight tube.
- the nominal profile of the path through the magnet of the desired ions from the incident beam 3 is shown bounded by broken lines 31. As the figure is a plan view, this nominal profile 31 is also the nominal projection on the dispersion plane of the path of the desired component of the incident beam.
- Ions in the incident beam which have different mass/charge ratios will follow curved paths of different radii through the magnet and w ll strike the walls of the flight tube 2 or the selection electrode 10.
- a thermionic electron source in the form of a single electrically conductive filament 5 is positioned inside the flight tube, above the nominal beam path to reduce the number of ions striking the filament and sputter etching it away.
- the filament 5 extends along the entire length of the beam path in the magnet and out into drift space.
- the filament may be shorter, located wholly within the flight tube.
- the filament may comprise a plurality of straight sections, rather than being a continuous curve .
- the filament 5 is located in the flight tube above the beam by means not shown in the figure, and runs substantially parallel to the nominal centre of the beam. In fact, in this embodiment the projection of the filament onto the dispersion plane is coincident with the projection of the nominal beam centre line.
- a power supply 9 is connected to the filament 5 to heat it to a temperature sufficient to cause the filament to emit electrons thermionically.
- the positioning of the filament 5 ensures that it is linked to the nominal beam profile 31 along its entire length inside the flight tube 2 by magnetic flux B.
- a perspective view of a section of the filament linked by magnetic flux to the nominal beam profile is shown schematic in Fig 2. Also shown in the figure is the path of an electron thermionically emitted from the filament.
- the electron follows a helical path along the magnetic flux passing through the filament, although the figure greatly exaggerates the radius of the circular component of this helical motion.
- the electron is only able to enter the beam because this flux also links the beam; electron mobility perpendicular to the applied field direction is almost zero.
- a tungsten filament was suspended above the nominal median ray of a beam inside a flight tube and electrically heated to temperatures of approximately 2000°C and higher to cause thermionic emission of electrons into the beam.
- a beam of 2keV boron ions as the filament temperature was increased to increase thermionic electron emission current, an increase m peak intensity and a decrease in the width of the beam emerging from the analysing magnet was observed, a result attributable to neutralisation of space charge m the beam by thermionically emitted electrons. It was also observed, however, that too high an emission current could actually reduce the beam current exiting the magnet, and so control of filament temperature is desirable to optimise space charge neutralisation.
- thermionic emission from a tungsten filament was found to enhance only the exiting beam corresponding to one isotope. This effect is attributable to poor spacial overlap between the projections of the filament and the path of ions of the other isotope onto the dispersion plane.
- a plurality of substantially longitudinal filaments may be employed. Such an embodiment is shown in Fig 3.
- five substantially parallel filaments are located so as to be linked by the flight tube magnetic field to the beam at a plurality of positions along its length and across its width.
- Means for heating the filaments which may of course comprise any suitable material, are provided (although not shown in the figure) , as are means for supporting the filaments in position in the flight tube.
- An alternative way of providing space charge neutralisation at a plurality of positions along the beam and across its width is to employ a series of substantially transverse filaments, as shown schematically in Fig 4.
- transverse filaments, and electrical connection to the filaments in particular are easier to engineer than longitudinal filaments.
- the filaments 5 are spaced from each other along the length of the beam, and each transverse filament 5 extends across the nominal beam width, connecting to bus bars 6 on either side of the beam flight path.
- the filaments are distributed along the beam and form a substantially planar array.
- the filaments 5 and bus bars 6 are shown as separate components electrically connected, in alternative embodiments the filaments and bus bars may be formed from a single graphite sheet.
- the space charge neutralisation apparatus inside the flight tube 2 is incorporated m an assembly 50, whose cross section is shown schematically in Fig 5.
- the outer casing of the assembly 50 can in fact also be referred to as a flight tube as it surrounds the ion beam as it travels through the magnet 1.
- the casing 50 is electrically conductive and earthed to screen the beam from external electric fields.
- the filaments 5 are negatively biased with respect to the casing 50 and flight tube 2, and this negative bias is adjustable to control the energy of the thermionically emitted electrons .
- the transverse filament 5 is fixed and electrically connected to bus bars 6 by means of fixing screws 52 and is linked to the nominal cross section of the beam envelope 32 across its whole width by the magnetic field in the flight tube.
- the transverse filaments are positioned above the nominal beam cross section and lie in a plane spaced from and substantially parallel to the dispersion plane.
- the neutralising assembly 50 further comprises heat shields 51, 51a arranged between the filaments 5 and the top and bottom walls of the flight tube 50. These heat shields reduce the power required to heat the filaments to temperatures sufficient to yield the required emission currents.
- the heat shields in this example are substantially planar graphite sheets extending along the nominal beam flight path and fully across the nominal beam width.
- the inner heat shields 51a are negatively biased with respect to the filaments 5 and act as electron repellers, able to reflect electrons travelling away from the beam, along magnetic flux lines, back towards the beam.
- the repellers may reflect the electron back towards the beam and so increase its contribution to space charge neutralisation.
- the bias voltage applied to the inner heat shields 51a is variable, and may be adjusted to achieve optimum neutralisation. For one application, a weak optimum was observed with a bias voltage of -3V.
- the filament 5 may be formed from any suitable material, including for example tungsten or graphite.
- suitable material including for example tungsten or graphite.
- graphite filaments it may be preferable to use graphite filaments, as carbon contamination of the beam (and hence of the target substrate) caused by parts of the beam striking the filaments and sputtering off material is much more tolerable than metal contamination.
- any carbon deposits inside the apparatus resulting from sputtering off the filaments are more easily removed, for example by oxidation and evacuation.
- a thermionic electron source comprising a combination of transverse and longitudinal filaments may be employed, for example m the form of a fine wire mesh positioned "over" the beam path.
- Fig. 6 shows a schematic cross section of a neutraliser assembly 50 in accordance with a further embodiment of the present invention.
- the casing of the assembly is optional, but in this example is made from aluminium and is grounded.
- the casing may be integrated with the vacuum flight tube 2 or even the analyser magnet poles themselves.
- a plurality of substantially hairpm-like graphite filaments 5 are spaced along the nominal beam flight path, each filament extending in a plane parallel to the dispersion plane and across the beam width (i.e. they are substantially transverse filaments) .
- Connecting means 52 connect each filament 5 to bus bars 6 positioned on the same side of the beam.
- the filaments form a substantially planar array. The direction of the flight tube magnetic field is shown, and, in the arbitrary orientation of the figure, the filaments are accordingly positioned adjacent and underneath the nominal beam cross section 32.
- Outer graphite heat shields 51b are grounded, as are the inner side heat shields. In contrast, the inner top and bottom heat shields 51a are negatively biased with respect to the filaments 5 to act as electron repellers.
- the support posts 59 are non-conduc ive and may, for example, be alumina, or graphite with alumina collars .
- Fig. 7 shows a highly schematic plan view of the arrangement of just the transverse hairpin filaments 5 and bus bars 6 of the embodiment of Fig 6.
- the bus bars follow curved paths substantially parallel to the beam (ie. following the arc of the analysing magnet) and the hairpin filaments are equispaced along the bus bars.
- the hairpin filaments are V-shaped, although of course other geometries are possible.
- the hairpin or V- shaped geometries, where the filaments connect to bus bars on the same side of the beam are particularly advantageous for graphite filaments, which are brittle. Brittle straight graphite filaments connected to bus bars on either side of the beam have a tendency to break as a result of relative movement of the bus bars and/or thermal expansion effects. Hairpin geometry alleviates this problem.
- Fig. 8 shows part of another embodiment in which the thermionic electron source is arranged inside the flight tube 2 (or beam vacuum chamber) and at least partially in the nominal path of the beam.
- the thermionic electron source comprises an array of filaments 5, arranged in a "zig-zag" pattern between the top and bottom of the flight tube 2 and extending along the nominal centre line of the beam. The array thus lies substantially on a curved path along the beam centre and extends over the full "height" of the beam (the "height" being defined as the extent of the beam in a direction parallel to the applied field B) .
- the filaments are attached to the flight tube 2 by a series of insulators 60.
- the filaments 5 are formed from refractory material and are arranged to be heated by the beam only.
- the filaments may be heated electrically at least in part, and may be connected electrically in series or in parallel. In these other embodiments, appropriate electrical feedthroughs to the filaments are provided.
- the thermionic electron source may be a grid arranged at least partially inside the nominal beam envelope.
- Fig. 9 shows a schematic cross section of part of another embodiment, in which the thermionic electron source comprises a substantially planar array of filaments 5 arranged across the nominal centre of the beam envelope 31, the filaments being heated, at least in part, electrically by a current supplied by means of bus bars 6 at the sides of the beam path.
- the flight tube 2 is earthed, and the array of filaments 5 is negatively biased with respect to the flight tube to control the energy of electrons injected into the beam.
- Electron repellers 51a are arranged above and below the nominal beam envelope 31 and are each negatively biased with respect to the filament array 5. All bias voltages are adjustable.
- Low energy emitted electrons 70 may be confined
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000548903A JP4476484B2 (ja) | 1998-05-12 | 1999-05-12 | イオンビームの空間電荷を中和するためのイオンビーム装置及び方法 |
| US09/700,206 US6515408B1 (en) | 1998-05-12 | 1999-05-12 | Ion beam apparatus and a method for neutralizing space charge in an ion beam |
| EP99922294A EP1078387A1 (en) | 1998-05-12 | 1999-05-12 | Ion beam apparatus and a method for neutralising space charge in an ion beam |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9810144.7 | 1998-05-12 | ||
| GB9810144A GB2337632B (en) | 1998-05-12 | 1998-05-12 | Ion beam apparatus and a method for neutralising space charge in an ion beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1999059182A1 true WO1999059182A1 (en) | 1999-11-18 |
Family
ID=10831903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1999/001500 Ceased WO1999059182A1 (en) | 1998-05-12 | 1999-05-12 | Ion beam apparatus and a method for neutralising space charge in an ion beam |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6515408B1 (enExample) |
| EP (1) | EP1078387A1 (enExample) |
| JP (1) | JP4476484B2 (enExample) |
| GB (1) | GB2337632B (enExample) |
| WO (1) | WO1999059182A1 (enExample) |
Cited By (8)
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|---|---|---|---|---|
| US6462817B1 (en) | 2000-05-12 | 2002-10-08 | Carlos Strocchia-Rivera | Method of monitoring ion implants by examination of an overlying masking material |
| WO2004042772A3 (en) * | 2002-11-05 | 2004-10-07 | Varian Semiconductor Equipment | Methods and apparatus for ion beam neutralization in magnets |
| US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US6891610B2 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining an implant characteristic and a presence of defects on a specimen |
| US6919957B2 (en) | 2000-09-20 | 2005-07-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
| US7106425B1 (en) | 2000-09-20 | 2006-09-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of defects and a thin film characteristic of a specimen |
| US7130029B2 (en) | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
| US7349090B2 (en) | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
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| US6633114B1 (en) * | 2000-01-12 | 2003-10-14 | Iowa State University Research Foundation, Inc. | Mass spectrometer with electron source for reducing space charge effects in sample beam |
| US20040227106A1 (en) * | 2003-05-13 | 2004-11-18 | Halling Alfred M. | System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway |
| US6879109B2 (en) * | 2003-05-15 | 2005-04-12 | Axcelis Technologies, Inc. | Thin magnetron structures for plasma generation in ion implantation systems |
| US6891174B2 (en) * | 2003-07-31 | 2005-05-10 | Axcelis Technologies, Inc. | Method and system for ion beam containment using photoelectrons in an ion beam guide |
| US7402816B2 (en) * | 2004-11-19 | 2008-07-22 | Varian Semiconductor Equipment Associates, Inc. | Electron injection in ion implanter magnets |
| KR20070106982A (ko) * | 2004-12-20 | 2007-11-06 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 저에너지 고전류 리본 빔 이온주입장치에서 빔 중성화의개선 |
| KR100851902B1 (ko) * | 2005-01-27 | 2008-08-13 | 삼성전자주식회사 | 이온 중성화 장치 |
| US7005657B1 (en) | 2005-02-04 | 2006-02-28 | Varian Semiconductor Equipment Associates, Inc. | Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery |
| US9508375B2 (en) | 2009-04-13 | 2016-11-29 | Applied Materials, Inc. | Modification of magnetic properties of films using ion and neutral beam implantation |
| JP5634992B2 (ja) * | 2009-06-11 | 2014-12-03 | 日新イオン機器株式会社 | イオンビーム照射装置及びイオンビーム発散抑制方法 |
| EP3261110A1 (en) * | 2016-06-21 | 2017-12-27 | Excillum AB | X-ray source with ionisation tool |
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| JPH07161320A (ja) * | 1993-12-10 | 1995-06-23 | Nissin Electric Co Ltd | イオンビームの空間電荷中和装置 |
-
1998
- 1998-05-12 GB GB9810144A patent/GB2337632B/en not_active Expired - Fee Related
-
1999
- 1999-05-12 WO PCT/GB1999/001500 patent/WO1999059182A1/en not_active Ceased
- 1999-05-12 EP EP99922294A patent/EP1078387A1/en not_active Withdrawn
- 1999-05-12 JP JP2000548903A patent/JP4476484B2/ja not_active Expired - Lifetime
- 1999-05-12 US US09/700,206 patent/US6515408B1/en not_active Expired - Fee Related
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| US4886971A (en) * | 1987-03-13 | 1989-12-12 | Mitsubishi Denki Kabushiki Kaisha | Ion beam irradiating apparatus including ion neutralizer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6462817B1 (en) | 2000-05-12 | 2002-10-08 | Carlos Strocchia-Rivera | Method of monitoring ion implants by examination of an overlying masking material |
| US6950196B2 (en) | 2000-09-20 | 2005-09-27 | Kla-Tencor Technologies Corp. | Methods and systems for determining a thickness of a structure on a specimen and at least one additional property of the specimen |
| US7106425B1 (en) | 2000-09-20 | 2006-09-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of defects and a thin film characteristic of a specimen |
| US6891610B2 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining an implant characteristic and a presence of defects on a specimen |
| US6917419B2 (en) | 2000-09-20 | 2005-07-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining flatness, a presence of defects, and a thin film characteristic of a specimen |
| US6917433B2 (en) | 2000-09-20 | 2005-07-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to an etch process |
| US6919957B2 (en) | 2000-09-20 | 2005-07-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
| US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US6946394B2 (en) | 2000-09-20 | 2005-09-20 | Kla-Tencor Technologies | Methods and systems for determining a characteristic of a layer formed on a specimen by a deposition process |
| US7006235B2 (en) | 2000-09-20 | 2006-02-28 | Kla-Tencor Technologies Corp. | Methods and systems for determining overlay and flatness of a specimen |
| US7460981B2 (en) | 2000-09-20 | 2008-12-02 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of macro and micro defects on a specimen |
| US7130029B2 (en) | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
| US7139083B2 (en) | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
| US7196782B2 (en) | 2000-09-20 | 2007-03-27 | Kla-Tencor Technologies Corp. | Methods and systems for determining a thin film characteristic and an electrical property of a specimen |
| US7349090B2 (en) | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
| KR100831442B1 (ko) * | 2002-11-05 | 2008-05-21 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 자석의 이온 빔 중성화를 위한 방법 및 장치 |
| WO2004042772A3 (en) * | 2002-11-05 | 2004-10-07 | Varian Semiconductor Equipment | Methods and apparatus for ion beam neutralization in magnets |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4476484B2 (ja) | 2010-06-09 |
| EP1078387A1 (en) | 2001-02-28 |
| JP2002515634A (ja) | 2002-05-28 |
| GB2337632B (en) | 2002-05-08 |
| GB2337632A (en) | 1999-11-24 |
| GB9810144D0 (en) | 1998-07-08 |
| US6515408B1 (en) | 2003-02-04 |
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