GB2337632B - Ion beam apparatus and a method for neutralising space charge in an ion beam - Google Patents

Ion beam apparatus and a method for neutralising space charge in an ion beam

Info

Publication number
GB2337632B
GB2337632B GB9810144A GB9810144A GB2337632B GB 2337632 B GB2337632 B GB 2337632B GB 9810144 A GB9810144 A GB 9810144A GB 9810144 A GB9810144 A GB 9810144A GB 2337632 B GB2337632 B GB 2337632B
Authority
GB
United Kingdom
Prior art keywords
ion beam
space charge
neutralising
beam apparatus
neutralising space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9810144A
Other languages
English (en)
Other versions
GB2337632A (en
GB9810144D0 (en
Inventor
Jonathan Gerald England
Andrew James Timothy Holmes
David George Armour
Den Berg Jaap Van
Stephen Moffatt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to GB9810144A priority Critical patent/GB2337632B/en
Publication of GB9810144D0 publication Critical patent/GB9810144D0/en
Priority to JP2000548903A priority patent/JP4476484B2/ja
Priority to US09/700,206 priority patent/US6515408B1/en
Priority to EP99922294A priority patent/EP1078387A1/en
Priority to PCT/GB1999/001500 priority patent/WO1999059182A1/en
Publication of GB2337632A publication Critical patent/GB2337632A/en
Application granted granted Critical
Publication of GB2337632B publication Critical patent/GB2337632B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Tubes For Measurement (AREA)
GB9810144A 1998-05-12 1998-05-12 Ion beam apparatus and a method for neutralising space charge in an ion beam Expired - Fee Related GB2337632B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB9810144A GB2337632B (en) 1998-05-12 1998-05-12 Ion beam apparatus and a method for neutralising space charge in an ion beam
JP2000548903A JP4476484B2 (ja) 1998-05-12 1999-05-12 イオンビームの空間電荷を中和するためのイオンビーム装置及び方法
US09/700,206 US6515408B1 (en) 1998-05-12 1999-05-12 Ion beam apparatus and a method for neutralizing space charge in an ion beam
EP99922294A EP1078387A1 (en) 1998-05-12 1999-05-12 Ion beam apparatus and a method for neutralising space charge in an ion beam
PCT/GB1999/001500 WO1999059182A1 (en) 1998-05-12 1999-05-12 Ion beam apparatus and a method for neutralising space charge in an ion beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9810144A GB2337632B (en) 1998-05-12 1998-05-12 Ion beam apparatus and a method for neutralising space charge in an ion beam

Publications (3)

Publication Number Publication Date
GB9810144D0 GB9810144D0 (en) 1998-07-08
GB2337632A GB2337632A (en) 1999-11-24
GB2337632B true GB2337632B (en) 2002-05-08

Family

ID=10831903

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9810144A Expired - Fee Related GB2337632B (en) 1998-05-12 1998-05-12 Ion beam apparatus and a method for neutralising space charge in an ion beam

Country Status (5)

Country Link
US (1) US6515408B1 (enExample)
EP (1) EP1078387A1 (enExample)
JP (1) JP4476484B2 (enExample)
GB (1) GB2337632B (enExample)
WO (1) WO1999059182A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6633114B1 (en) * 2000-01-12 2003-10-14 Iowa State University Research Foundation, Inc. Mass spectrometer with electron source for reducing space charge effects in sample beam
US6462817B1 (en) 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
AU2001295060A1 (en) 2000-09-20 2002-04-02 Kla-Tencor-Inc. Methods and systems for semiconductor fabrication processes
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6762423B2 (en) * 2002-11-05 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets
US20040227106A1 (en) * 2003-05-13 2004-11-18 Halling Alfred M. System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway
US6879109B2 (en) * 2003-05-15 2005-04-12 Axcelis Technologies, Inc. Thin magnetron structures for plasma generation in ion implantation systems
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
US7402816B2 (en) * 2004-11-19 2008-07-22 Varian Semiconductor Equipment Associates, Inc. Electron injection in ion implanter magnets
KR20070106982A (ko) * 2004-12-20 2007-11-06 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 저에너지 고전류 리본 빔 이온주입장치에서 빔 중성화의개선
KR100851902B1 (ko) * 2005-01-27 2008-08-13 삼성전자주식회사 이온 중성화 장치
US7005657B1 (en) 2005-02-04 2006-02-28 Varian Semiconductor Equipment Associates, Inc. Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery
US9508375B2 (en) 2009-04-13 2016-11-29 Applied Materials, Inc. Modification of magnetic properties of films using ion and neutral beam implantation
JP5634992B2 (ja) * 2009-06-11 2014-12-03 日新イオン機器株式会社 イオンビーム照射装置及びイオンビーム発散抑制方法
EP3261110A1 (en) * 2016-06-21 2017-12-27 Excillum AB X-ray source with ionisation tool

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161320A (ja) * 1993-12-10 1995-06-23 Nissin Electric Co Ltd イオンビームの空間電荷中和装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886971A (en) * 1987-03-13 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Ion beam irradiating apparatus including ion neutralizer
JPS63274051A (ja) 1987-04-30 1988-11-11 Sumitomo Electric Ind Ltd イオンビ−ム中性化器
JPH09180662A (ja) * 1995-12-27 1997-07-11 Hitachi Ltd イオンビーム装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161320A (ja) * 1993-12-10 1995-06-23 Nissin Electric Co Ltd イオンビームの空間電荷中和装置

Also Published As

Publication number Publication date
JP4476484B2 (ja) 2010-06-09
EP1078387A1 (en) 2001-02-28
JP2002515634A (ja) 2002-05-28
WO1999059182A1 (en) 1999-11-18
GB2337632A (en) 1999-11-24
GB9810144D0 (en) 1998-07-08
US6515408B1 (en) 2003-02-04

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130512