JP4467940B2 - レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 - Google Patents

レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 Download PDF

Info

Publication number
JP4467940B2
JP4467940B2 JP2003345277A JP2003345277A JP4467940B2 JP 4467940 B2 JP4467940 B2 JP 4467940B2 JP 2003345277 A JP2003345277 A JP 2003345277A JP 2003345277 A JP2003345277 A JP 2003345277A JP 4467940 B2 JP4467940 B2 JP 4467940B2
Authority
JP
Japan
Prior art keywords
laser
optical system
lens
irradiation apparatus
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003345277A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004158837A (ja
JP2004158837A5 (enExample
Inventor
洋正 大石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003345277A priority Critical patent/JP4467940B2/ja
Publication of JP2004158837A publication Critical patent/JP2004158837A/ja
Publication of JP2004158837A5 publication Critical patent/JP2004158837A5/ja
Application granted granted Critical
Publication of JP4467940B2 publication Critical patent/JP4467940B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Thin Film Transistor (AREA)
JP2003345277A 2002-10-16 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法 Expired - Fee Related JP4467940B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003345277A JP4467940B2 (ja) 2002-10-16 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002301896 2002-10-16
JP2003345277A JP4467940B2 (ja) 2002-10-16 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004158837A JP2004158837A (ja) 2004-06-03
JP2004158837A5 JP2004158837A5 (enExample) 2006-10-12
JP4467940B2 true JP4467940B2 (ja) 2010-05-26

Family

ID=32827928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003345277A Expired - Fee Related JP4467940B2 (ja) 2002-10-16 2003-10-03 レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4467940B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4527479B2 (ja) * 2004-09-10 2010-08-18 サンテック株式会社 波長走査型ファイバレーザ光源
JP2012109417A (ja) * 2010-11-17 2012-06-07 Komatsu Ltd スラブ型増幅装置、レーザ装置および極端紫外光源装置
JPWO2012164626A1 (ja) * 2011-06-02 2014-07-31 パナソニック株式会社 薄膜半導体装置の製造方法、薄膜半導体アレイ基板の製造方法、結晶性シリコン薄膜の形成方法、及び結晶性シリコン薄膜の形成装置
JP2012099834A (ja) * 2011-12-19 2012-05-24 Fuji Electric Co Ltd Ｍｏｓゲート型炭化珪素半導体装置の製造方法
KR102427155B1 (ko) * 2015-08-25 2022-07-29 삼성디스플레이 주식회사 레이저 결정화 장치
EP3514821B1 (en) * 2018-01-18 2020-05-27 Laser Systems & Solutions of Europe Method of laser irradiation of a patterned semiconductor device
CN111952159B (zh) * 2020-08-17 2024-01-26 北京中科镭特电子有限公司 一种激光退火装置

Also Published As

Publication number Publication date
JP2004158837A (ja) 2004-06-03

Similar Documents

Publication Publication Date Title
US7405114B2 (en) Laser irradiation apparatus and method of manufacturing semiconductor device
US7800080B2 (en) Laser irradiation apparatus and method of manufacturing semiconductor device
KR101019137B1 (ko) 레이저 조사방법 및 레이저 조사장치, 및 반도체장치의제조방법
US6979605B2 (en) Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light
JP4429586B2 (ja) 半導体装置の作製方法
EP1468774B1 (en) Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
KR100915104B1 (ko) 반도체 장치의 제조 방법
CN100479116C (zh) 激光照射设备和制造半导体器件的方法
KR101024959B1 (ko) 빔 호모지나이저, 레이저 조사장치 및 반도체 장치의제조방법
US7135389B2 (en) Irradiation method of laser beam
US7566669B2 (en) Laser irradiation apparatus and laser irradiation method
JP4498716B2 (ja) レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法
JP4467940B2 (ja) レーザ照射装置及び前記レーザ照射装置を用いた半導体装置の作製方法
JP5244832B2 (ja) 半導体装置の作製方法
JP4519400B2 (ja) 半導体装置の作製方法
JP3878126B2 (ja) 半導体装置の作製方法
JP4531330B2 (ja) レーザ光の照射方法
JP2004193201A6 (ja) レーザー照射方法
JP5132637B2 (ja) 半導体装置の作製方法
JP3878118B2 (ja) 半導体装置の作製方法
JP2005072565A (ja) ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060829

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060829

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091120

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100129

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100223

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100224

R150 Certificate of patent or registration of utility model

Ref document number: 4467940

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130305

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130305

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130305

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140305

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees