JP4463392B2 - El表示装置の作製方法 - Google Patents
El表示装置の作製方法 Download PDFInfo
- Publication number
- JP4463392B2 JP4463392B2 JP2000221836A JP2000221836A JP4463392B2 JP 4463392 B2 JP4463392 B2 JP 4463392B2 JP 2000221836 A JP2000221836 A JP 2000221836A JP 2000221836 A JP2000221836 A JP 2000221836A JP 4463392 B2 JP4463392 B2 JP 4463392B2
- Authority
- JP
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- Prior art keywords
- light emitting
- emitting layer
- metal element
- anode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000000034 method Methods 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910052783 alkali metal Inorganic materials 0.000 claims description 27
- 150000001340 alkali metals Chemical class 0.000 claims description 27
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 27
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 27
- 229910052736 halogen Inorganic materials 0.000 claims description 24
- 150000002367 halogens Chemical class 0.000 claims description 24
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 239000011737 fluorine Substances 0.000 claims description 15
- 229910052792 caesium Inorganic materials 0.000 claims description 12
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 12
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 9
- 229910052700 potassium Inorganic materials 0.000 claims description 9
- 239000011591 potassium Substances 0.000 claims description 9
- 239000011575 calcium Substances 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 36
- 230000005525 hole transport Effects 0.000 description 16
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 239000003566 sealing material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 239000000565 sealant Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/221—Static displays, e.g. displaying permanent logos
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000221836A JP4463392B2 (ja) | 1999-07-23 | 2000-07-24 | El表示装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20920399 | 1999-07-23 | ||
| JP11-209203 | 1999-07-23 | ||
| JP2000221836A JP4463392B2 (ja) | 1999-07-23 | 2000-07-24 | El表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001102176A JP2001102176A (ja) | 2001-04-13 |
| JP2001102176A5 JP2001102176A5 (enExample) | 2007-07-19 |
| JP4463392B2 true JP4463392B2 (ja) | 2010-05-19 |
Family
ID=16569069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000221836A Expired - Fee Related JP4463392B2 (ja) | 1999-07-23 | 2000-07-24 | El表示装置の作製方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6620528B1 (enExample) |
| EP (1) | EP1071145B1 (enExample) |
| JP (1) | JP4463392B2 (enExample) |
| KR (2) | KR100793042B1 (enExample) |
| CN (2) | CN101916828B (enExample) |
| DE (1) | DE60045463D1 (enExample) |
| TW (1) | TW465119B (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4472056B2 (ja) * | 1999-07-23 | 2010-06-02 | 株式会社半導体エネルギー研究所 | エレクトロルミネッセンス表示装置及びその作製方法 |
| US6936485B2 (en) * | 2000-03-27 | 2005-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device |
| US6605826B2 (en) * | 2000-08-18 | 2003-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and display device |
| JP4292245B2 (ja) | 2001-02-05 | 2009-07-08 | 三星モバイルディスプレイ株式會社 | 発光体、発光素子、及び発光表示装置 |
| US6661180B2 (en) * | 2001-03-22 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, driving method for the same and electronic apparatus |
| JP4593019B2 (ja) * | 2001-06-25 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP4865165B2 (ja) | 2001-08-29 | 2012-02-01 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP4345278B2 (ja) * | 2001-09-14 | 2009-10-14 | セイコーエプソン株式会社 | パターニング方法、膜形成方法、パターニング装置、有機エレクトロルミネッセンス素子の製造方法、カラーフィルタの製造方法、電気光学装置の製造方法、及び電子装置の製造方法 |
| US6949883B2 (en) * | 2001-12-06 | 2005-09-27 | Seiko Epson Corporation | Electro-optical device and an electronic apparatus |
| JP4651916B2 (ja) * | 2002-03-07 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| EP1343206B1 (en) | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
| TWI362128B (en) | 2002-03-26 | 2012-04-11 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP4545385B2 (ja) * | 2002-03-26 | 2010-09-15 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US7474045B2 (en) * | 2002-05-17 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device having TFT with radiation-absorbing film |
| JP2004069395A (ja) * | 2002-08-02 | 2004-03-04 | Nec Corp | マイクロチップ、マイクロチップの製造方法および成分検出方法 |
| CA2412379A1 (en) * | 2002-11-22 | 2004-05-22 | Luxell Technolgies Inc. | Transparent-cathode for top-emission organic light-emitting diodes |
| KR100490553B1 (ko) * | 2003-03-18 | 2005-05-17 | 삼성에스디아이 주식회사 | 평판형 표시장치의 제조방법 및 이 방법을 이용한 박형평판 표시장치. |
| US7540978B2 (en) | 2004-08-05 | 2009-06-02 | Novaled Ag | Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component |
| DE602004006275T2 (de) * | 2004-10-07 | 2007-12-20 | Novaled Ag | Verfahren zur Dotierung von einem Halbleitermaterial mit Cäsium |
| JP2006309955A (ja) * | 2005-04-26 | 2006-11-09 | Sony Corp | 有機電界発光素子の製造方法および有機電界発光素子 |
| EP1727221B1 (de) * | 2005-05-27 | 2010-04-14 | Novaled AG | Transparente organische Leuchtdiode |
| EP2045843B1 (de) * | 2005-06-01 | 2012-08-01 | Novaled AG | Lichtemittierendes Bauteil mit einer Elektrodenanordnung |
| EP1894262B1 (fr) * | 2005-06-10 | 2013-01-23 | Thomson Licensing | Diode organique electroluminescente ne comprenant au plus que deux couches de materiaux organiques differents |
| EP1739765A1 (de) * | 2005-07-01 | 2007-01-03 | Novaled AG | Organische Leuchtdiode und Anordnung mit mehreren organischen Leuchtdioden |
| US8288180B2 (en) | 2005-07-04 | 2012-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light emitting device |
| EP1780816B1 (en) | 2005-11-01 | 2020-07-01 | Novaled GmbH | A method for producing an electronic device with a layer structure and an electronic device |
| EP1939320B1 (de) * | 2005-12-07 | 2013-08-21 | Novaled AG | Verfahren zum Abscheiden eines Aufdampfmaterials |
| WO2007077715A1 (ja) * | 2006-01-05 | 2007-07-12 | Konica Minolta Holdings, Inc. | ボトムエミッション型有機エレクトロルミネッセンスパネル |
| US9065055B2 (en) | 2006-03-21 | 2015-06-23 | Novaled Ag | Method for preparing doped organic semiconductor materials and formulation utilized therein |
| JP2009535779A (ja) | 2006-05-04 | 2009-10-01 | エルジー・ケム・リミテッド | 発光パターンを有する有機発光素子、その製造方法および装置 |
| US7898610B2 (en) * | 2006-06-30 | 2011-03-01 | Lg. Display Co., Ltd. | Liquid crystal display device and method of fabricating the same |
| DE102007015468A1 (de) * | 2007-03-30 | 2008-10-02 | Osram Opto Semiconductors Gmbh | Organische strahlungsemittierende Vorrichtung, deren Verwendung sowie ein Herstellungsverfahren für die Vorrichtung |
| US7875881B2 (en) * | 2007-04-03 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| KR101482760B1 (ko) * | 2007-06-14 | 2015-01-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 전자기기, 및 발광장치의 제조 방법 |
| JP5086184B2 (ja) * | 2007-06-14 | 2012-11-28 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置および照明装置 |
| US8093806B2 (en) * | 2007-06-20 | 2012-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and electronic apparatus |
| JP5208591B2 (ja) | 2007-06-28 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 発光装置、及び照明装置 |
| DE102009022902B4 (de) | 2009-03-30 | 2023-10-26 | Pictiva Displays International Limited | Organisches optoelektronisches Bauteil und Verfahren zur Herstellung eines organischen optoelektronischen Bauteils |
| JP2012182443A (ja) | 2011-02-11 | 2012-09-20 | Semiconductor Energy Lab Co Ltd | 発光素子及び発光装置 |
| KR20150068411A (ko) * | 2012-10-03 | 2015-06-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 전자 기기 및 조명 장치 |
| JP2016095502A (ja) * | 2014-11-11 | 2016-05-26 | 株式会社半導体エネルギー研究所 | 表示システム、表示装置 |
| JP6538339B2 (ja) * | 2014-12-12 | 2019-07-03 | 株式会社Joled | 有機el素子および有機el素子の製造方法 |
| EP4225612A4 (en) * | 2020-10-09 | 2024-04-17 | Flex-N-Gate Advanced Product Development, LLC | ILLUMINATED MARKERS SYSTEM |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US221701A (en) * | 1879-11-18 | Improvement in hub-attaching devices | ||
| US4376145A (en) * | 1980-12-22 | 1983-03-08 | W. H. Brady Co. | Electroluminescent display |
| US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| US4885211A (en) * | 1987-02-11 | 1989-12-05 | Eastman Kodak Company | Electroluminescent device with improved cathode |
| JP3069139B2 (ja) * | 1990-03-16 | 2000-07-24 | 旭化成工業株式会社 | 分散型電界発光素子 |
| US5047687A (en) * | 1990-07-26 | 1991-09-10 | Eastman Kodak Company | Organic electroluminescent device with stabilized cathode |
| US5093698A (en) * | 1991-02-12 | 1992-03-03 | Kabushiki Kaisha Toshiba | Organic electroluminescent device |
| US5328854A (en) * | 1993-03-31 | 1994-07-12 | At&T Bell Laboratories | Fabrication of electronic devices with an internal window |
| JP2639355B2 (ja) | 1994-09-01 | 1997-08-13 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5684365A (en) | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
| DE69535970D1 (de) | 1994-12-14 | 2009-08-06 | Eastman Kodak Co | Elektrolumineszente Vorrichtung mit einer organischen elektrolumineszenten Schicht |
| NZ304057A (en) * | 1995-03-16 | 1999-04-29 | British Nuclear Fuels Plc | Solid solution separator of zirconia urania and yttria for fuel cell |
| JPH09148066A (ja) | 1995-11-24 | 1997-06-06 | Pioneer Electron Corp | 有機el素子 |
| EP0835597B1 (en) * | 1996-04-25 | 2003-02-19 | Koninklijke Philips Electronics N.V. | Organic electroluminescent device |
| DE69716715T2 (de) * | 1996-07-16 | 2003-08-14 | Koninklijke Philips Electronics N.V., Eindhoven | Organische elektroluminizierte vorrichtung |
| US5902688A (en) * | 1996-07-16 | 1999-05-11 | Hewlett-Packard Company | Electroluminescent display device |
| JP3622874B2 (ja) | 1996-07-31 | 2005-02-23 | パイオニア株式会社 | 有機エレクトロルミネセンス素子 |
| US5766779A (en) * | 1996-08-20 | 1998-06-16 | Eastman Kodak Company | Electron transporting materials for organic electroluminescent devices |
| JPH10270171A (ja) * | 1997-01-27 | 1998-10-09 | Junji Kido | 有機エレクトロルミネッセント素子 |
| CN1155115C (zh) | 1997-11-17 | 2004-06-23 | Lg电子株式会社 | 有机场致发光器件 |
| US6248458B1 (en) * | 1997-11-17 | 2001-06-19 | Lg Electronics Inc. | Organic electroluminescent device with improved long-term stability |
| US6064151A (en) * | 1997-12-08 | 2000-05-16 | Motorola, Inc. | Organic electroluminescent device with enhanced performance |
| US6137223A (en) * | 1998-07-28 | 2000-10-24 | Eastman Kodak Company | Electron-injecting layer formed from a dopant layer for organic light-emitting structure |
| US6188134B1 (en) | 1998-08-20 | 2001-02-13 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with rubidium barrier film and process for making same |
| US6169359B1 (en) * | 1998-09-14 | 2001-01-02 | Planar Systems, Inc. | Electroluminescent phosphor thin films with increased brightness that includes an alkali halide |
| US6137233A (en) * | 1998-10-16 | 2000-10-24 | Electro-Mag International, Inc. | Ballast circuit with independent lamp control |
| US6259138B1 (en) | 1998-12-18 | 2001-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith |
| US6114088A (en) | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
| US6281627B1 (en) * | 1999-01-21 | 2001-08-28 | Tdk Corporation | Organic electroluminescent device with a high resistant inorganic electron injecting layer |
| JP4472056B2 (ja) * | 1999-07-23 | 2010-06-02 | 株式会社半導体エネルギー研究所 | エレクトロルミネッセンス表示装置及びその作製方法 |
| US6278236B1 (en) | 1999-09-02 | 2001-08-21 | Eastman Kodak Company | Organic electroluminescent devices with electron-injecting layer having aluminum and alkali halide |
| US6936485B2 (en) * | 2000-03-27 | 2005-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device |
-
2000
- 2000-07-07 TW TW089113485A patent/TW465119B/zh not_active IP Right Cessation
- 2000-07-18 DE DE60045463T patent/DE60045463D1/de not_active Expired - Lifetime
- 2000-07-18 EP EP00115503A patent/EP1071145B1/en not_active Expired - Lifetime
- 2000-07-19 US US09/619,485 patent/US6620528B1/en not_active Expired - Lifetime
- 2000-07-22 KR KR1020000042139A patent/KR100793042B1/ko not_active Expired - Fee Related
- 2000-07-24 JP JP2000221836A patent/JP4463392B2/ja not_active Expired - Fee Related
- 2000-07-24 CN CN201010155667.0A patent/CN101916828B/zh not_active Expired - Fee Related
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- 2005-07-22 KR KR1020050066862A patent/KR100722180B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001102176A (ja) | 2001-04-13 |
| KR100793042B1 (ko) | 2008-01-10 |
| CN101916828A (zh) | 2010-12-15 |
| EP1071145A2 (en) | 2001-01-24 |
| CN1282064A (zh) | 2001-01-31 |
| TW465119B (en) | 2001-11-21 |
| CN1282064B (zh) | 2010-05-12 |
| CN101916828B (zh) | 2014-07-09 |
| KR20050082165A (ko) | 2005-08-22 |
| EP1071145A3 (en) | 2004-04-14 |
| US20040028807A1 (en) | 2004-02-12 |
| US6620528B1 (en) | 2003-09-16 |
| KR100722180B1 (ko) | 2007-05-29 |
| DE60045463D1 (de) | 2011-02-17 |
| KR20010029987A (ko) | 2001-04-16 |
| EP1071145B1 (en) | 2011-01-05 |
| US7205019B2 (en) | 2007-04-17 |
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