JP4459666B2 - 除去装置 - Google Patents

除去装置 Download PDF

Info

Publication number
JP4459666B2
JP4459666B2 JP2004070051A JP2004070051A JP4459666B2 JP 4459666 B2 JP4459666 B2 JP 4459666B2 JP 2004070051 A JP2004070051 A JP 2004070051A JP 2004070051 A JP2004070051 A JP 2004070051A JP 4459666 B2 JP4459666 B2 JP 4459666B2
Authority
JP
Japan
Prior art keywords
substrate
film
plasma
gas
reaction vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004070051A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005260015A (ja
JP2005260015A5 (cg-RX-API-DMAC7.html
Inventor
彰 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004070051A priority Critical patent/JP4459666B2/ja
Publication of JP2005260015A publication Critical patent/JP2005260015A/ja
Publication of JP2005260015A5 publication Critical patent/JP2005260015A5/ja
Application granted granted Critical
Publication of JP4459666B2 publication Critical patent/JP4459666B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Cleaning In General (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2004070051A 2004-03-12 2004-03-12 除去装置 Expired - Fee Related JP4459666B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004070051A JP4459666B2 (ja) 2004-03-12 2004-03-12 除去装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004070051A JP4459666B2 (ja) 2004-03-12 2004-03-12 除去装置

Publications (3)

Publication Number Publication Date
JP2005260015A JP2005260015A (ja) 2005-09-22
JP2005260015A5 JP2005260015A5 (cg-RX-API-DMAC7.html) 2007-04-26
JP4459666B2 true JP4459666B2 (ja) 2010-04-28

Family

ID=35085444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004070051A Expired - Fee Related JP4459666B2 (ja) 2004-03-12 2004-03-12 除去装置

Country Status (1)

Country Link
JP (1) JP4459666B2 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
JP2009302401A (ja) * 2008-06-16 2009-12-24 Tokyo Seimitsu Co Ltd チャックテーブル洗浄方法、チャックテーブル洗浄装置及び半導体ウェーハ平面加工装置
JP4696165B2 (ja) * 2009-02-03 2011-06-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2020102085A1 (en) 2018-11-14 2020-05-22 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
KR102731166B1 (ko) 2018-12-20 2024-11-18 램 리써치 코포레이션 레지스트들의 건식 현상 (dry development)
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102746578B1 (ko) 2020-01-15 2024-12-26 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
KR102781895B1 (ko) * 2020-07-07 2025-03-18 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
CN115152008A (zh) 2020-11-13 2022-10-04 朗姆研究公司 用于干法去除光致抗蚀剂的处理工具
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
CN120958566A (zh) 2023-03-17 2025-11-14 朗姆研究公司 用于单一处理室中euv图案化的干法显影与蚀刻工艺的集成

Also Published As

Publication number Publication date
JP2005260015A (ja) 2005-09-22

Similar Documents

Publication Publication Date Title
JP4667529B2 (ja) 半導体装置の作製方法
JP4437544B2 (ja) 半導体装置の作製方法
US7824520B2 (en) Plasma treatment apparatus
US8318601B2 (en) Method for manufacturing thin film transistor and display device
US7247529B2 (en) Method for manufacturing display device
US8912546B2 (en) Thin film transistor and display device
US7176069B2 (en) Manufacture method of display device
CN102184969B (zh) 薄膜晶体管
US7642038B2 (en) Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
US8158517B2 (en) Method for manufacturing wiring substrate, thin film transistor, display device and television device
US7939888B2 (en) Display device and television device using the same
CN1906650B (zh) 显示装置及其制造方法
JP4459666B2 (ja) 除去装置
US20050196710A1 (en) Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
JP4741192B2 (ja) 半導体装置の作製方法
TW200522368A (en) Method for manufacturing liquid crystal display device
JP4578826B2 (ja) 半導体装置の作製方法
JP4656843B2 (ja) 半導体装置の作製方法
JP4503324B2 (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070308

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070308

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081030

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091221

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100209

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100210

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140219

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees