JP4459568B2 - マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置 - Google Patents

マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置 Download PDF

Info

Publication number
JP4459568B2
JP4459568B2 JP2003287487A JP2003287487A JP4459568B2 JP 4459568 B2 JP4459568 B2 JP 4459568B2 JP 2003287487 A JP2003287487 A JP 2003287487A JP 2003287487 A JP2003287487 A JP 2003287487A JP 4459568 B2 JP4459568 B2 JP 4459568B2
Authority
JP
Japan
Prior art keywords
charged beam
lens
exposure apparatus
electron
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003287487A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005057110A5 (enExample
JP2005057110A (ja
Inventor
兼一 長永
治人 小野
明佳 谷本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Canon Inc filed Critical Hitachi High Technologies Corp
Priority to JP2003287487A priority Critical patent/JP4459568B2/ja
Priority to US10/902,789 priority patent/US7060984B2/en
Priority to EP04254720.8A priority patent/EP1505629B1/en
Publication of JP2005057110A publication Critical patent/JP2005057110A/ja
Publication of JP2005057110A5 publication Critical patent/JP2005057110A5/ja
Application granted granted Critical
Publication of JP4459568B2 publication Critical patent/JP4459568B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/023—Means for mechanically adjusting components not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2003287487A 2003-08-06 2003-08-06 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置 Expired - Lifetime JP4459568B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003287487A JP4459568B2 (ja) 2003-08-06 2003-08-06 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
US10/902,789 US7060984B2 (en) 2003-08-06 2004-08-02 Multi-charged beam lens and charged beam exposure apparatus using the same
EP04254720.8A EP1505629B1 (en) 2003-08-06 2004-08-05 Electrostatic lens and charged beam exposure apparatus using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003287487A JP4459568B2 (ja) 2003-08-06 2003-08-06 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置

Publications (3)

Publication Number Publication Date
JP2005057110A JP2005057110A (ja) 2005-03-03
JP2005057110A5 JP2005057110A5 (enExample) 2006-09-07
JP4459568B2 true JP4459568B2 (ja) 2010-04-28

Family

ID=33550027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003287487A Expired - Lifetime JP4459568B2 (ja) 2003-08-06 2003-08-06 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置

Country Status (3)

Country Link
US (1) US7060984B2 (enExample)
EP (1) EP1505629B1 (enExample)
JP (1) JP4459568B2 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2575144B1 (en) * 2003-09-05 2017-07-12 Carl Zeiss Microscopy GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
JP2007019192A (ja) * 2005-07-06 2007-01-25 Canon Inc 荷電ビームレンズ、及び荷電ビーム露光装置
JP4745739B2 (ja) * 2005-07-06 2011-08-10 キヤノン株式会社 静電レンズ装置、露光装置、及びデバイス製造方法
JP5663717B2 (ja) * 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
JP2007231324A (ja) * 2006-02-28 2007-09-13 Canon Inc マルチ荷電ビーム加工装置
KR101252001B1 (ko) * 2006-06-15 2013-04-08 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
JP5048283B2 (ja) * 2006-07-20 2012-10-17 キヤノン株式会社 偏向器アレイ、描画装置およびデバイス製造方法
TWI479530B (zh) * 2008-10-01 2015-04-01 Mapper Lithography Ip Bv 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法
NL2004872A (en) * 2009-06-18 2010-12-20 Asml Netherlands Bv Lithographic projection apparatus.
JP5669636B2 (ja) * 2011-03-15 2015-02-12 キヤノン株式会社 荷電粒子線レンズおよびそれを用いた露光装置
NL2007392C2 (en) 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP5777445B2 (ja) * 2011-08-12 2015-09-09 キヤノン株式会社 荷電粒子線描画装置及び物品の製造方法
JP5813123B2 (ja) * 2011-09-30 2015-11-17 京セラ株式会社 静電レンズおよびそれを用いた荷電粒子ビーム装置
JP2013084638A (ja) 2011-10-05 2013-05-09 Canon Inc 静電レンズ
EP2629317B1 (en) * 2012-02-20 2015-01-28 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with dynamic focus and method of operating thereof
JP5970213B2 (ja) * 2012-03-19 2016-08-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
WO2013142068A1 (en) * 2012-03-19 2013-09-26 Kla-Tencor Corporation Pillar-supported array of micro electron lenses
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US9824851B2 (en) * 2013-01-20 2017-11-21 William M. Tong Charge drain coating for electron-optical MEMS
CN105874559B (zh) 2013-11-14 2018-11-23 迈普尔平版印刷Ip有限公司 多电极电子光学系统
DE102015202172B4 (de) 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
KR20160102588A (ko) * 2015-02-20 2016-08-31 선문대학교 산학협력단 나노구조 팁의 전자빔의 밀도를 향상시키는 전자방출원을 구비한 초소형전자칼럼
US10242839B2 (en) * 2017-05-05 2019-03-26 Kla-Tencor Corporation Reduced Coulomb interactions in a multi-beam column
KR102460680B1 (ko) 2017-10-02 2022-10-28 에이에스엠엘 네델란즈 비.브이. 하전 입자 빔들을 사용하는 장치
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
CN112055886A (zh) 2018-02-27 2020-12-08 卡尔蔡司MultiSEM有限责任公司 带电粒子多束系统及方法
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
DE102018115012A1 (de) * 2018-06-21 2019-12-24 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
DE102018124219A1 (de) 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
DE102019008249B3 (de) 2019-11-27 2020-11-19 Carl Zeiss Multisem Gmbh Teilchenstrahl-System mit einer Multistrahl-Ablenkeinrichtung und einem Strahlfänger, Verfahren zum Betreiben des Teilchenstrahl-Systems und zugehöriges Computerprogrammprodukt
WO2021156198A1 (en) 2020-02-04 2021-08-12 Carl Zeiss Multisem Gmbh Multi-beam digital scan and image acquisition
JP7409946B2 (ja) * 2020-04-13 2024-01-09 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム照射装置及びマルチ荷電粒子ビーム検査装置
TW202220012A (zh) 2020-09-30 2022-05-16 德商卡爾蔡司多重掃描電子顯微鏡有限公司 在可調工作距離附近具快速自動對焦之多重粒子束顯微鏡及相關方法
DE102021200799B3 (de) 2021-01-29 2022-03-31 Carl Zeiss Multisem Gmbh Verfahren mit verbesserter Fokuseinstellung unter Berücksichtigung eines Bildebenenkipps in einem Vielzahl-Teilchenstrahlmikroskop
DE102021116969B3 (de) 2021-07-01 2022-09-22 Carl Zeiss Multisem Gmbh Verfahren zur bereichsweisen Probeninspektion mittels eines Vielstrahl-Teilchenmikroskopes, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop zur Halbleiterprobeninspektion
US20230041174A1 (en) * 2021-08-08 2023-02-09 ViaMEMS Technologies, Inc. Electrostatic devices to influence beams of charged particles

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3839962B2 (ja) * 1998-06-25 2006-11-01 キヤノン株式会社 荷電ビーム用マスク及び、該マスクを用いたデバイス製造方法
JP2000232053A (ja) * 1999-02-09 2000-08-22 Canon Inc マスクパターン転写方法、該マスクパターン転写方法を用いたマスクパターン転写装置及びデバイス製造方法
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
AU1926501A (en) * 1999-11-23 2001-06-04 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
JP2001283756A (ja) * 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
JP4585661B2 (ja) * 2000-03-31 2010-11-24 キヤノン株式会社 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
JP2001284230A (ja) * 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
JP4947841B2 (ja) 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
JP4947842B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
JP2001283755A (ja) 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイとこの作製方法、荷電粒子線露光装置ならびにデバイス製造方法
JP3728217B2 (ja) * 2000-04-27 2005-12-21 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法

Also Published As

Publication number Publication date
EP1505629A2 (en) 2005-02-09
US7060984B2 (en) 2006-06-13
US20050077475A1 (en) 2005-04-14
EP1505629A3 (en) 2011-06-01
JP2005057110A (ja) 2005-03-03
EP1505629B1 (en) 2016-05-25

Similar Documents

Publication Publication Date Title
JP4459568B2 (ja) マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
US6946662B2 (en) Multi-charged beam lens, charged-particle beam exposure apparatus using the same, and device manufacturing method
JP4647820B2 (ja) 荷電粒子線描画装置、および、デバイスの製造方法
US7109494B2 (en) Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus using deflector
US7038226B2 (en) Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method
US6818911B2 (en) Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
JP4615816B2 (ja) 電子レンズ、その電子レンズを用いた荷電粒子線露光装置、デバイス製造方法
JP2007266525A (ja) 荷電粒子線レンズアレイ、該荷電粒子線レンズアレイを用いた荷電粒子線露光装置
JP3834271B2 (ja) マルチ荷電ビームレンズ及びこれを用いた荷電粒子線露光装置ならびにデバイス製造方法
JP4541798B2 (ja) 荷電粒子線レンズアレイ、及び該荷電粒子線レンズアレイを用いた荷電粒子線露光装置
JP4252813B2 (ja) 荷電ビーム用レンズ、荷電ビーム露光装置及びデバイス製造方法
JP5159035B2 (ja) レンズアレイ及び該レンズアレイを含む荷電粒子線露光装置
JP2006049703A (ja) 荷電粒子線レンズアレイ、及び該荷電粒子線レンズアレイを用いた荷電粒子線露光装置
JP2007019248A (ja) 偏向器、荷電粒子線露光装置およびデバイス製造方法
JP2005136114A (ja) 電極基板およびその製造方法、ならびに該電極基板を用いた荷電ビーム露光装置
JP4532184B2 (ja) 電極およびその製造方法ならびに偏向器アレイ構造体の製造方法
JP4116316B2 (ja) アレイ構造体の製造方法、荷電粒子ビーム露光装置並びにデバイス製造方法
JP2008066359A (ja) 荷電ビームレンズアレイ、露光装置及びデバイス製造方法
JP2014033077A (ja) 貫通孔の形成方法
JP4455846B2 (ja) 電極基板およびその製造方法、該電極基板を用いた偏向器、ならびに該偏向器を用いた荷電粒子線露光装置
JP2007019192A (ja) 荷電ビームレンズ、及び荷電ビーム露光装置
JP4402077B2 (ja) 荷電粒子線レンズアレイ、露光装置及びデバイス製造方法
JP2006013390A (ja) 偏向器、偏向器アレイ、偏向器の作製方法、荷電粒子線露光装置およびデバイス製造方法
JP2007019242A (ja) 偏向器、荷電粒子線露光装置及びデバイス製造方法
JP2007019250A (ja) 偏向器、荷電ビーム露光装置およびデバイス製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060725

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060725

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090413

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090709

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090918

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100115

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100210

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4459568

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140219

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term