JP4458906B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP4458906B2
JP4458906B2 JP2004111380A JP2004111380A JP4458906B2 JP 4458906 B2 JP4458906 B2 JP 4458906B2 JP 2004111380 A JP2004111380 A JP 2004111380A JP 2004111380 A JP2004111380 A JP 2004111380A JP 4458906 B2 JP4458906 B2 JP 4458906B2
Authority
JP
Japan
Prior art keywords
semiconductor
heat
semiconductor device
insulating film
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004111380A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005294760A5 (enExample
JP2005294760A (ja
Inventor
浩和 高田
幸一 石見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004111380A priority Critical patent/JP4458906B2/ja
Publication of JP2005294760A publication Critical patent/JP2005294760A/ja
Publication of JP2005294760A5 publication Critical patent/JP2005294760A5/ja
Application granted granted Critical
Publication of JP4458906B2 publication Critical patent/JP4458906B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2004111380A 2004-04-05 2004-04-05 半導体装置 Expired - Fee Related JP4458906B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004111380A JP4458906B2 (ja) 2004-04-05 2004-04-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004111380A JP4458906B2 (ja) 2004-04-05 2004-04-05 半導体装置

Publications (3)

Publication Number Publication Date
JP2005294760A JP2005294760A (ja) 2005-10-20
JP2005294760A5 JP2005294760A5 (enExample) 2007-05-10
JP4458906B2 true JP4458906B2 (ja) 2010-04-28

Family

ID=35327313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004111380A Expired - Fee Related JP4458906B2 (ja) 2004-04-05 2004-04-05 半導体装置

Country Status (1)

Country Link
JP (1) JP4458906B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142276A (ja) * 2005-11-21 2007-06-07 Toshiba Corp 半導体装置及びその製造方法
TW200735308A (en) * 2005-12-23 2007-09-16 Koninkl Philips Electronics Nv On-chip interconnect-stack cooling using sacrificial interconnect segments
KR100737162B1 (ko) * 2006-08-11 2007-07-06 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
FR2951871B1 (fr) * 2009-10-23 2011-12-16 St Microelectronics Sa Plaque d'interface entre circuits integres
FR2961017B1 (fr) * 2010-06-02 2013-10-11 Commissariat Energie Atomique Puce electronique, composants electroniques et bras de commutation incorporant cette puce electronique
US8680674B2 (en) * 2012-05-31 2014-03-25 Freescale Semiconductor, Inc. Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices
JP2018018908A (ja) * 2016-07-26 2018-02-01 パナソニックＩｐマネジメント株式会社 熱電変換器
JP6323527B2 (ja) * 2016-10-17 2018-05-16 Tdk株式会社 半導体チップおよび磁気記録装置
KR102652928B1 (ko) 2017-02-06 2024-03-29 엘지이노텍 주식회사 열전 소자
KR20200099795A (ko) * 2019-02-15 2020-08-25 에스케이하이닉스 주식회사 반도체 장치
US11908766B2 (en) * 2021-04-05 2024-02-20 Jmj Korea Co., Ltd. Cooling system where semiconductor component comprising semiconductor chip and cooling apparatus are joined
CN113249692B (zh) * 2021-04-29 2023-10-20 三河同飞制冷股份有限公司 一种大功率半导体元器件的冷却板
CN119289549B (zh) * 2024-12-10 2025-02-11 安徽农业大学 一种半导体制冷结构以及冷凝器

Also Published As

Publication number Publication date
JP2005294760A (ja) 2005-10-20

Similar Documents

Publication Publication Date Title
CN102347316B (zh) 三维集成电路结构
US8030113B2 (en) Thermoelectric 3D cooling
EP2304792B1 (en) Active thermal control for stacked ic devices
US7663230B2 (en) Methods of forming channels on an integrated circuit die and die cooling systems including such channels
TWI529877B (zh) 半導體裝置
US8674491B2 (en) Semiconductor device
JP4458906B2 (ja) 半導体装置
US20120063090A1 (en) Cooling mechanism for stacked die package and method of manufacturing the same
CN101427368A (zh) 电渗透泵和微通道
TWI878643B (zh) 具有熱增強的三維ｉｃ封裝
KR20160021752A (ko) 집적된 열전 냉각
JP4942807B2 (ja) フリップチップ半導体素子の熱電冷却器
CN105938821A (zh) 热增强的散热器
CN101292348A (zh) 具有增强的热和器件性能的可堆叠晶片或管芯封装
CN115579336A (zh) 三维集成结构及其制作方法
CN110277361A (zh) 热辐射装置、包括其的半导体封装件和半导体装置
CN102194811B (zh) 热电装置
CN110571206B (zh) 半导体结构及其形成方法和芯片的形成方法
CN110660759B (zh) 散热结构及制造散热结构的方法
CN116884929B (zh) 一种三维芯片封装结构及其制造方法
CN121054495A (zh) 形成封装结构的方法、以及封装结构
TW202527264A (zh) 封裝結構、冷卻特徵、用於冷卻封裝結構之方法
CN119517867A (zh) 半导体装置、集成电路器件及其制造方法
CN119317343A (zh) 热电致冷芯片及其制作方法和封装结构

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070316

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070316

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090818

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100106

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100202

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100209

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140219

Year of fee payment: 4

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees