JP4456016B2 - 金属シース二ホウ化マグネシウム超電導線材及びその製造方法 - Google Patents
金属シース二ホウ化マグネシウム超電導線材及びその製造方法 Download PDFInfo
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- JP4456016B2 JP4456016B2 JP2005029136A JP2005029136A JP4456016B2 JP 4456016 B2 JP4456016 B2 JP 4456016B2 JP 2005029136 A JP2005029136 A JP 2005029136A JP 2005029136 A JP2005029136 A JP 2005029136A JP 4456016 B2 JP4456016 B2 JP 4456016B2
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- metal sheath
- wire
- superconducting
- superconducting wire
- magnesium diboride
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- 229910052751 metal Inorganic materials 0.000 title claims description 74
- 239000002184 metal Substances 0.000 title claims description 74
- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 21
- 239000000463 material Substances 0.000 claims description 58
- 238000005121 nitriding Methods 0.000 claims description 35
- 239000002887 superconductor Substances 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 238000005491 wire drawing Methods 0.000 claims description 12
- 238000005255 carburizing Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910000831 Steel Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000010959 steel Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000011282 treatment Methods 0.000 description 14
- 239000000843 powder Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000000873 masking effect Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000010955 niobium Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000011133 lead Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000011135 tin Substances 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 5
- 239000005751 Copper oxide Substances 0.000 description 5
- 229910000431 copper oxide Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- 229910001275 Niobium-titanium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000007885 magnetic separation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 238000000886 hydrostatic extrusion Methods 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910001105 martensitic stainless steel Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/202—Permanent superconducting devices comprising metal borides, e.g. MgB2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0856—Manufacture or treatment of devices comprising metal borides, e.g. MgB2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/704—Wire, fiber, or cable
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Description
Claims (13)
- 金属シース中に二ホウ化マグネシウムよりなる超電導体が内包されている超電導線材において、前記金属シースが、線材に加工する前の段階でビッカース硬さが400以下の材料からなり、内面に窒化処理又は浸炭処理により拡散硬化層を形成して内面の硬さを外面の硬さよりも大きくしたことを特徴とする金属シース二ホウ化マグネシウム超電導線材。
- 請求項1において、前記金属シースの材料が鋼よりなることを特徴とする金属シース二ホウ化マグネシウム超電導線材。
- 請求項2において、前記鋼がクロムモリブデン鋼またはステンレス鋼よりなることを特徴とする金属シース二ホウ化マグネシウム超電導線材。
- 請求項1において、前記金属シースに前記超電導体とともに銅、インジウム、錫、鉛、鉄、アルミニウム、マグネシウム、チタン、タングステン、酸化珪素、炭化珪素および窒化珪素から選ばれた少なくとも1種が内包されていることを特徴とする金属シース二ホウ化マグネシウム超電導線材。
- 請求項4において、前記銅、インジウム、錫、鉛、鉄、アルミニウム、マグネシウム、チタン、タングステン、酸化珪素、炭化珪素および窒化珪素から選ばれた少なくとも1種が0.2〜30体積%含まれていることを特徴とする金属シース二ホウ化マグネシウム超電導線材。
- 第一の金属シース中に二ホウ化マグネシウムよりなる超電導体が内包された超電導線材を複数本ツイストして撚り線材とし、この撚り線材の複数本をさらに第二の金属シース中に内包してなる超電導多芯線材であって、前記第一の金属シースが、線材に加工する前の段階でビッカース硬さが400以下の材料からなり、内面に窒化処理又は浸炭処理により拡散硬化層を形成して内面の硬さを外面の硬さよりも大きくしたことを特徴とする超電導多芯線材。
- 請求項6において、前記第二の金属シースにおける内面の硬さを外面の硬さよりも大きくしたことを特徴とする超電導線多芯線材。
- 管状の金属シース中に二ホウ化マグネシウムよりなる超電導体を充填し、伸線加工を施して線材に加工する金属シース二ホウ化マグネシウム超電導線材の製造方法において、前記金属シースが、線材に加工する前の段階でビッカース硬さが400以下の材料からなり、内面に窒化処理又は浸炭処理により拡散硬化層を形成して内面の硬さを外面の硬さよりも大きくし、その状態で伸線加工を施すようにしたことを特徴とする金属シース二ホウ化マグネシウム超電導線材の製造方法。
- 請求項8において、前記金属シースの材料が鋼よりなることを特徴とする金属シース二ホウ化マグネシウム超電導線材の製造方法。
- 請求項8において、前記超電導体の密度が理論密度の90%以上になるまで伸線加工を施すことを特徴とする金属シース二ホウ化マグネシウム超電導線材の製造方法。
- 請求項8において、前記金属シースの内面のビッカース硬さが600以上になるまで伸線加工を施すことを特徴とする金属シース二ホウ化マグネシウム超電導線材の製造方法。
- 請求項8において、前記金属シース中に前記超電導体とともに銅、インジウム、錫、鉛、鉄、アルミニウム、マグネシウム、チタン、タングステン、酸化珪素、炭化珪素および窒化珪素から選ばれた少なくとも1種を充填することを特徴とする金属シース二ホウ化マグネシウム超電導線材の製造方法。
- 請求項12において、前記銅、インジウム、錫、鉛、鉄、アルミニウム、マグネシウム、チタン、タングステン、酸化珪素、炭化珪素および窒化珪素から選ばれた少なくとも1種を0.2〜30体積%の範囲内で混合することを特徴とする金属シース二ホウ化マグネシウム超電導線材の製造方法。
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JP2005029136A JP4456016B2 (ja) | 2005-02-04 | 2005-02-04 | 金属シース二ホウ化マグネシウム超電導線材及びその製造方法 |
US11/346,317 US7569520B2 (en) | 2005-02-04 | 2006-02-03 | Metal sheath magnesium diboride superconducting wire and its manufacturing method |
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JP2005029136A JP4456016B2 (ja) | 2005-02-04 | 2005-02-04 | 金属シース二ホウ化マグネシウム超電導線材及びその製造方法 |
Publications (2)
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JP2006216443A JP2006216443A (ja) | 2006-08-17 |
JP4456016B2 true JP4456016B2 (ja) | 2010-04-28 |
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JP2005029136A Expired - Fee Related JP4456016B2 (ja) | 2005-02-04 | 2005-02-04 | 金属シース二ホウ化マグネシウム超電導線材及びその製造方法 |
Country Status (2)
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US (1) | US7569520B2 (ja) |
JP (1) | JP4456016B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4533254B2 (ja) * | 2005-06-21 | 2010-09-01 | 株式会社日立製作所 | 金属面の接合方法 |
JP4602237B2 (ja) * | 2005-12-07 | 2010-12-22 | 株式会社日立製作所 | 高性能MgB2超電導線及び製造方法 |
DE102008049672B4 (de) * | 2008-09-30 | 2015-11-26 | Bruker Eas Gmbh | Supraleiterverbund mit einem Kern oder mit mehreren Filamenten, die jeweils eine MgB2-Phase aufweisen, sowie Vorprodukt und Verfahren zur Herstellung eines Supraleiterverbundes |
JP2013152784A (ja) | 2012-01-24 | 2013-08-08 | Hitachi Ltd | MgB2超電導線材の前駆体及びその製造方法 |
JP6047341B2 (ja) * | 2012-08-29 | 2016-12-21 | 株式会社日立製作所 | 伝導冷却式永久電流スイッチ及び超電導線材の製造方法 |
FR3034365B1 (fr) | 2015-03-31 | 2017-05-19 | Metrolab | Cryostat, vehicule de transport a sustentation magnetique et systeme de transport a sustentation magnetique associes |
KR102002372B1 (ko) * | 2019-01-31 | 2019-07-23 | 케이.에이.티.(주) | 테이핑 방식에 의한 MgB2 초전도 선재 제조방법, 이에 의하여 제조된 MgB2 초전도 선재 및 초전도 다심선재 제조장치 |
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JPH02294463A (ja) * | 1989-05-10 | 1990-12-05 | Mazda Motor Corp | 窒化鋼部材の製造方法 |
WO2002069353A1 (en) * | 2001-02-28 | 2002-09-06 | Industrial Research Limited | Superconducting borides and wires made thereof |
US20030207765A1 (en) * | 2001-03-12 | 2003-11-06 | Bower Christopher A. | Method for fabricating a metal-clad superconductive body, and article comprising body |
JP4667638B2 (ja) * | 2001-05-09 | 2011-04-13 | 古河電気工業株式会社 | MgB2超電導線の製造方法 |
JP4055375B2 (ja) | 2001-06-15 | 2008-03-05 | 株式会社日立製作所 | 超電導線材とその作製方法及びそれを用いた超電導マグネット |
JP2003031057A (ja) * | 2001-07-17 | 2003-01-31 | National Institute For Materials Science | MgB2超伝導線材の製造方法 |
JP3775304B2 (ja) * | 2002-01-25 | 2006-05-17 | 日立電線株式会社 | 二ホウ化マグネシウム超電導線材の製造方法 |
JP4481584B2 (ja) * | 2003-04-11 | 2010-06-16 | 株式会社日立製作所 | 複合シースMgB2超電導線材およびその製造方法 |
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2005
- 2005-02-04 JP JP2005029136A patent/JP4456016B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-03 US US11/346,317 patent/US7569520B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2006216443A (ja) | 2006-08-17 |
US7569520B2 (en) | 2009-08-04 |
US20090170710A1 (en) | 2009-07-02 |
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