JP4450330B2 - セルごとに複数のデータ状態を記録するデュアルセルメモリデバイスをプログラミングする方法 - Google Patents
セルごとに複数のデータ状態を記録するデュアルセルメモリデバイスをプログラミングする方法 Download PDFInfo
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- JP4450330B2 JP4450330B2 JP2006506949A JP2006506949A JP4450330B2 JP 4450330 B2 JP4450330 B2 JP 4450330B2 JP 2006506949 A JP2006506949 A JP 2006506949A JP 2006506949 A JP2006506949 A JP 2006506949A JP 4450330 B2 JP4450330 B2 JP 4450330B2
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- 238000000034 method Methods 0.000 title claims description 27
- 230000009977 dual effect Effects 0.000 title description 6
- 238000003860 storage Methods 0.000 claims description 28
- 230000000295 complement effect Effects 0.000 claims description 8
- 238000012935 Averaging Methods 0.000 claims description 6
- 238000005513 bias potential Methods 0.000 claims description 5
- 210000004027 cell Anatomy 0.000 description 93
- 210000000352 storage cell Anatomy 0.000 description 53
- 238000009826 distribution Methods 0.000 description 16
- 230000006870 function Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000013500 data storage Methods 0.000 description 4
- 239000002784 hot electron Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
Claims (7)
- 第1の導電領域に隣接する第1電荷蓄積領域と、第2の導電領域に隣接する第2の電荷蓄積領域とを備えた連続した絶縁電荷蓄積層を含む電荷捕獲絶縁コアメモリデバイスを制御する方法であって、
第1量の電荷を蓄積するために第1電荷蓄積領域をプログラミングするステップを備え、前記第1量の電荷はブランクプログラムレベルおよび複数のチャージプログラムレベルのうちの1つから選択される第1領域のデータ状態に対応するものであって、
第2量の電荷を蓄積するために前記第2電荷蓄積領域をプログラミングするステップを備え、前記第2量の電荷はブランクプログラムレベルおよび複数のチャージプログラムレベルのうちの1つから選択される第2領域のデータ状態に対応するものであって、
複数の基準電流に対して前記第1の導電領域と前記第2の導電領域の間に配置されたチャネルを通る電流を比較することによって、前記電荷蓄積領域のうちの1つを読み出し、前記読み出し電荷蓄積領域がプログラムされるデータ状態を判断するステップを備え、複数の動的基準は前記コアメモリデバイスと関連付けられており、かつ、前記基準電流は第1の関連付けられた動的基準の最大相補ビット妨害閾値電圧条件と、第2の関連付けられた動的基準の最小プログラムレベル閾値電圧条件とを平均化することによってもたらされる第1の基準電流を含む、
方法。 - 前記電荷蓄積領域のうちの1つに対する各データ状態はメモリデバイスに対する識別可能な閾値電圧を確立する、請求項1記載の方法。
- 前記第1の電荷蓄積領域を前記チャージプログラムレベルのうちの1つへプログラミングする間に、バイアス電位が前記第2の導電領域へ印加される、請求項1又は2記載の方法。
- 前記第2の電荷蓄積領域を前記チャージプログラムレベルのうちの1つへプログラミングする間に、バイアス電位が前記第1の導電領域へ印加される、請求項1、2または3記載の方法。
- 前記複数のチャージプログラムレベルは、最小プログラムレベル、中間プログラムレベル、及び最大プログラムレベルを含む、請求項1から4のいずれか1項に記載の方法。
- 前記読み出し電荷蓄積領域に対して判断された前記データ状態に関連づけられた第1のデジタルワード値を出力するステップを更に有し、前記第1のデジタルワードは少なくとも2ビット長である、請求項1から5のいずれか1項に記載の方法。
- 前記その他の前記電荷蓄積領域を読み出すステップと、前記その他の前記電荷蓄積領域に対して前記データ状態と関連付けられた第2のデジタルワード値を出力するステップを更に含み、前記第2のデジタルワードは少なくとも2ビット長である、請求項6記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/413,800 US6956768B2 (en) | 2003-04-15 | 2003-04-15 | Method of programming dual cell memory device to store multiple data states per cell |
PCT/US2004/007026 WO2004095469A1 (en) | 2003-04-15 | 2004-03-08 | Method of programming dual cell memory device to store multiple data states per cell |
Publications (2)
Publication Number | Publication Date |
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JP2006523908A JP2006523908A (ja) | 2006-10-19 |
JP4450330B2 true JP4450330B2 (ja) | 2010-04-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006506949A Expired - Lifetime JP4450330B2 (ja) | 2003-04-15 | 2004-03-08 | セルごとに複数のデータ状態を記録するデュアルセルメモリデバイスをプログラミングする方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6956768B2 (ja) |
JP (1) | JP4450330B2 (ja) |
KR (1) | KR20060002982A (ja) |
CN (1) | CN1774769A (ja) |
DE (1) | DE112004000658B4 (ja) |
GB (1) | GB2415843B (ja) |
TW (1) | TWI362666B (ja) |
WO (1) | WO2004095469A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US7130210B2 (en) * | 2005-01-13 | 2006-10-31 | Spansion Llc | Multi-level ONO flash program algorithm for threshold width control |
KR100616214B1 (ko) | 2005-06-30 | 2006-08-28 | 주식회사 하이닉스반도체 | 멀티-레벨 셀을 가지는 플래시 메모리 장치의 프로그램제어 회로 및 그 프로그램 제어 방법 |
US7630253B2 (en) * | 2006-04-05 | 2009-12-08 | Spansion Llc | Flash memory programming and verification with reduced leakage current |
US7489560B2 (en) | 2006-04-05 | 2009-02-10 | Spansion Llc | Reduction of leakage current and program disturbs in flash memory devices |
US7773412B2 (en) * | 2006-05-22 | 2010-08-10 | Micron Technology, Inc. | Method and apparatus for providing a non-volatile memory with reduced cell capacitive coupling |
US7852669B2 (en) * | 2007-03-16 | 2010-12-14 | Spansion Llc | Division-based sensing and partitioning of electronic memory |
US7904222B2 (en) * | 2007-06-27 | 2011-03-08 | GM Global Technology Operations LLC | Trailer articulation angle estimation |
US7692962B2 (en) * | 2007-12-18 | 2010-04-06 | Spansion Llc | Reduced state quadbit |
TWI397071B (zh) * | 2008-12-31 | 2013-05-21 | A Data Technology Co Ltd | 記憶體儲存裝置及其控制方法 |
US8077513B2 (en) * | 2009-09-24 | 2011-12-13 | Macronix International Co., Ltd. | Method and apparatus for programming a multi-level memory |
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EP0904588B1 (en) * | 1996-06-14 | 2001-07-25 | Infineon Technologies AG | A device and method for multi-level charge/storage and reading out |
KR20000005467A (ko) | 1996-08-01 | 2000-01-25 | 칼 하인쯔 호르닝어 | 저장 셀 장치의 동작 방법 |
US5764568A (en) * | 1996-10-24 | 1998-06-09 | Micron Quantum Devices, Inc. | Method for performing analog over-program and under-program detection for a multistate memory cell |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6243289B1 (en) | 1998-04-08 | 2001-06-05 | Micron Technology Inc. | Dual floating gate programmable read only memory cell structure and method for its fabrication and operation |
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JP3829161B2 (ja) | 1999-10-14 | 2006-10-04 | スパンション インク | 多ビット情報を記録する不揮発性メモリ回路 |
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KR100386296B1 (ko) * | 2000-12-30 | 2003-06-02 | 주식회사 하이닉스반도체 | 멀티레벨을 가지는 플래쉬 메모리를 프로그램/리드하기위한 회로 및 그 방법 |
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-
2003
- 2003-04-15 US US10/413,800 patent/US6956768B2/en not_active Expired - Lifetime
-
2004
- 2004-03-08 KR KR1020057019398A patent/KR20060002982A/ko not_active Application Discontinuation
- 2004-03-08 CN CNA2004800102974A patent/CN1774769A/zh active Pending
- 2004-03-08 GB GB0518385A patent/GB2415843B/en not_active Expired - Fee Related
- 2004-03-08 WO PCT/US2004/007026 patent/WO2004095469A1/en active Application Filing
- 2004-03-08 DE DE112004000658.9T patent/DE112004000658B4/de not_active Expired - Fee Related
- 2004-03-08 JP JP2006506949A patent/JP4450330B2/ja not_active Expired - Lifetime
- 2004-03-18 TW TW093107244A patent/TWI362666B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1774769A (zh) | 2006-05-17 |
TWI362666B (en) | 2012-04-21 |
KR20060002982A (ko) | 2006-01-09 |
TW200428397A (en) | 2004-12-16 |
WO2004095469A1 (en) | 2004-11-04 |
GB0518385D0 (en) | 2005-10-19 |
US20040208057A1 (en) | 2004-10-21 |
DE112004000658T5 (de) | 2007-09-20 |
GB2415843A (en) | 2006-01-04 |
GB2415843B (en) | 2006-04-26 |
JP2006523908A (ja) | 2006-10-19 |
US6956768B2 (en) | 2005-10-18 |
DE112004000658B4 (de) | 2014-12-31 |
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EXPY | Cancellation because of completion of term |