JP4444668B2 - 露光制御を使用して表面を検査する方法およびシステム - Google Patents
露光制御を使用して表面を検査する方法およびシステム Download PDFInfo
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- JP4444668B2 JP4444668B2 JP2003580842A JP2003580842A JP4444668B2 JP 4444668 B2 JP4444668 B2 JP 4444668B2 JP 2003580842 A JP2003580842 A JP 2003580842A JP 2003580842 A JP2003580842 A JP 2003580842A JP 4444668 B2 JP4444668 B2 JP 4444668B2
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- 238000000034 method Methods 0.000 title claims description 18
- 230000010354 integration Effects 0.000 claims description 65
- 235000012431 wafers Nutrition 0.000 description 44
- 238000007689 inspection Methods 0.000 description 41
- 238000005286 illumination Methods 0.000 description 27
- 230000035945 sensitivity Effects 0.000 description 15
- 238000001914 filtration Methods 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8896—Circuits specially adapted for system specific signal conditioning
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N2021/9513—Liquid crystal panels
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- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
ライン照射システムでは、レーザがライン状にウェハ表面を照射する。照射線は、例えば、幅が約1〜3ミクロン以下など非常に狭く、長さが約0.1〜約10mm以上など比較的長くなっているものが好ましい。幅の狭い照射線にはスポット走査システムの長所があるので、複数の傾斜結像システム(例えば、図1および図2の集光器117〜119)が、マルチチャネルフィルタリングの性能を発揮できるようになる。一方、長い照射線には投光照射システムの長所があるので、フーリエフィルタリングが効果的に提供される。
図3は、図1および図2のシステム100,200に使用することのできるCCD300の一例を示す。一実施形態では、図3のCCD300は画素ラインを有する1次元アレイセンサである。CCDの用途として512,1024,2048,または4096画素を使用する場合がほとんどであるが、CCDは、任意の所望の画素数を有していてもよい。図3のCCD300は64画素を有する。CCD300はさらにいくつかのタップ301を有していてもよい。「タップ」とは、画素のグループのことである。タップ内の画素は連続的に読み出されるが、タップは、CCDのデータ速度が速くなるように、平行して読み出される。図3のCCD300は8個のタップ301を有し、各タップは8画素302を制御する。実際の検査システム用のCCDが有する画素数およびタップ数はどのような値でもよい。ライン照射検査システムではタップの数を増やすとより効果的であるが、複雑なカメラ設計が必要になると考えられる。
手動式露光制御では、異なる領域に対し異なるCCD積分時間をシステムが適用することができるように、異なる光散乱領域の正確な位置を知ることが検査システムに求められる。
検査システムが異なる散乱領域の正確な位置を知っている必要があるため、上述した実施形態は手動式露光制御を使用する。CCDのフルダイナミックを利用する課題に取り組む別の方法には、タップごとに自動的に積分時間を調節する自動式露光制御を使用する方法がある。散乱強度が強すぎる場合、予め定められたグレイレベルにCCDが達するようにCCDは積分時間を低減させることができる。他方、散乱強度が弱すぎる場合、予め定められたグレイレベルにCCDが達するようにCCDは積分時間を増加させることができる。この自動式露光制御方法の利点の一つは、検査システムが種々の散乱領域の正確な位置を知る必要がないことである。欠点の一つは、古いグレイレベルと新しいグレイレベルとの間で像に遅延が見られることである。
Claims (2)
- 光を異なって散乱させる少なくとも二つの領域を備えるウェハを検査するように構成されるシステムであって、
前記ウェハから散乱した光を集めるように構成される集光器を備え、前記集光器は電荷結合素子(CCD)を備え、前記CCDは、
第1および第2のタップを含む複数のタップを備え、各タップは一連の画素を備え、第1の積分時間を第1の領域から散乱した光を集めるように設けられる第1のタップ用に設定し、第2の積分時間を第2の領域から散乱した光を集めるように設けられる第2のタップ用に設定し、前記第1の積分時間は前記第2の積分時間とは異なるものであるシステム。 - 光を異なって散乱させる二つの領域を備える表面を走査するように構成される電荷結合素子(CCD)中の複数のタップの積分時間を設定する方法であって、
第1の領域から散乱した光を集めるように設けられる第1のタップの第1の積分時間を設定するステップと、
第2の領域から散乱した光を集めるように設けられる第2のタップの第2の積分時間を設定するステップであって、前記第1の積分時間は前記第2の積分時間とは異なるものである第2の積分時間を設定するステップと、
前記第1および第2の領域から散乱した光を集めるステップと、
を含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/113,145 US6724473B2 (en) | 2002-03-27 | 2002-03-27 | Method and system using exposure control to inspect a surface |
PCT/US2003/009842 WO2003083453A1 (en) | 2002-03-27 | 2003-03-26 | Method and system using exposure control to inspect a surface |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005521876A JP2005521876A (ja) | 2005-07-21 |
JP2005521876A5 JP2005521876A5 (ja) | 2006-05-18 |
JP4444668B2 true JP4444668B2 (ja) | 2010-03-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003580842A Expired - Lifetime JP4444668B2 (ja) | 2002-03-27 | 2003-03-26 | 露光制御を使用して表面を検査する方法およびシステム |
Country Status (3)
Country | Link |
---|---|
US (1) | US6724473B2 (ja) |
JP (1) | JP4444668B2 (ja) |
WO (1) | WO2003083453A1 (ja) |
Families Citing this family (45)
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WO2005100961A2 (en) * | 2004-04-19 | 2005-10-27 | Phoseon Technology, Inc. | Imaging semiconductor strucutures using solid state illumination |
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2002
- 2002-03-27 US US10/113,145 patent/US6724473B2/en not_active Expired - Lifetime
-
2003
- 2003-03-26 JP JP2003580842A patent/JP4444668B2/ja not_active Expired - Lifetime
- 2003-03-26 WO PCT/US2003/009842 patent/WO2003083453A1/en active Application Filing
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Publication number | Publication date |
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US6724473B2 (en) | 2004-04-20 |
JP2005521876A (ja) | 2005-07-21 |
US20030223058A1 (en) | 2003-12-04 |
WO2003083453A1 (en) | 2003-10-09 |
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