JP4440554B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4440554B2
JP4440554B2 JP2003098548A JP2003098548A JP4440554B2 JP 4440554 B2 JP4440554 B2 JP 4440554B2 JP 2003098548 A JP2003098548 A JP 2003098548A JP 2003098548 A JP2003098548 A JP 2003098548A JP 4440554 B2 JP4440554 B2 JP 4440554B2
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Japan
Prior art keywords
semiconductor substrate
hole
oxide film
thermal oxide
main surface
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Expired - Fee Related
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JP2003098548A
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English (en)
Japanese (ja)
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JP2004165602A (ja
JP2004165602A5 (enExample
Inventor
勝己 柴山
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Priority to JP2003098548A priority Critical patent/JP4440554B2/ja
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Publication of JP2004165602A5 publication Critical patent/JP2004165602A5/ja
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  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Light Receiving Elements (AREA)
JP2003098548A 2002-09-24 2003-04-01 半導体装置 Expired - Fee Related JP4440554B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003098548A JP4440554B2 (ja) 2002-09-24 2003-04-01 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002277948 2002-09-24
JP2003098548A JP4440554B2 (ja) 2002-09-24 2003-04-01 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009256141A Division JP5198411B2 (ja) 2002-09-24 2009-11-09 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2004165602A JP2004165602A (ja) 2004-06-10
JP2004165602A5 JP2004165602A5 (enExample) 2006-02-02
JP4440554B2 true JP4440554B2 (ja) 2010-03-24

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JP2003098548A Expired - Fee Related JP4440554B2 (ja) 2002-09-24 2003-04-01 半導体装置

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JP (1) JP4440554B2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353997A (ja) * 2004-06-14 2005-12-22 Ricoh Co Ltd 半導体装置及びその製造方法
JP3917649B2 (ja) * 2005-01-04 2007-05-23 株式会社アイ・スクウェアリサーチ 固体撮像装置パッケージ及びその製造方法
JP5414965B2 (ja) * 2006-05-18 2014-02-12 Ｔｄｋ株式会社 光学半導体装置及びその製造方法
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
WO2008108970A2 (en) 2007-03-05 2008-09-12 Tessera, Inc. Chips having rear contacts connected by through vias to front contacts
US8017982B2 (en) 2007-06-12 2011-09-13 Micron Technology, Inc. Imagers with contact plugs extending through the substrates thereof and imager fabrication methods
CN101802990B (zh) * 2007-07-31 2013-03-13 数字光学欧洲有限公司 使用穿透硅通道的半导体封装方法
JP5237648B2 (ja) * 2008-02-05 2013-07-17 スパンション エルエルシー 半導体装置及びその製造方法
JP5343245B2 (ja) 2008-05-15 2013-11-13 新光電気工業株式会社 シリコンインターポーザの製造方法
JP2009295859A (ja) * 2008-06-06 2009-12-17 Oki Semiconductor Co Ltd 半導体装置および半導体装置の製造方法
KR101655331B1 (ko) 2008-10-15 2016-09-07 사일렉스 마이크로시스템스 에이비 비아 상호접속을 제조하는 방법
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5703556B2 (ja) * 2009-10-19 2015-04-22 セイコーエプソン株式会社 半導体装置及び半導体装置の製造方法、回路基板並びに電子機器
JP2011204979A (ja) * 2010-03-26 2011-10-13 Oki Electric Industry Co Ltd 半導体チップ、半導体多層回路、及び、半導体チップの製造方法
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
JP5926921B2 (ja) 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5791461B2 (ja) 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
US8736008B2 (en) * 2012-01-04 2014-05-27 General Electric Company Photodiode array and methods of fabrication
DE102012220416A1 (de) * 2012-11-09 2014-05-15 Siemens Aktiengesellschaft Fotoempfänger mit einer Vielzahl von Fotozellen und Durchkontaktierungen sowie Verfahren zu dessen Herstellung
JP6068955B2 (ja) * 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
JP6068954B2 (ja) 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5911629B2 (ja) * 2015-08-04 2016-04-27 浜松ホトニクス株式会社 光検出装置
JP5989872B2 (ja) * 2015-08-04 2016-09-07 浜松ホトニクス株式会社 光検出装置の接続構造
JP5927334B2 (ja) * 2015-10-28 2016-06-01 浜松ホトニクス株式会社 光検出装置
JP6116728B2 (ja) * 2016-03-29 2017-04-19 浜松ホトニクス株式会社 半導体光検出素子
JP6318190B2 (ja) * 2016-04-25 2018-04-25 浜松ホトニクス株式会社 光検出装置
JP6186038B2 (ja) * 2016-04-25 2017-08-23 浜松ホトニクス株式会社 半導体光検出素子
JP6244403B2 (ja) * 2016-06-01 2017-12-06 浜松ホトニクス株式会社 半導体光検出素子
JP6140868B2 (ja) * 2016-06-17 2017-05-31 浜松ホトニクス株式会社 半導体光検出素子
JP6282368B2 (ja) * 2017-04-25 2018-02-21 浜松ホトニクス株式会社 光検出装置
CN110634792B (zh) * 2019-09-26 2023-01-24 上海航天电子通讯设备研究所 一种电气互连基板制造方法
JP7162775B2 (ja) * 2020-03-12 2022-10-28 三菱電機株式会社 半導体装置
CN119422248A (zh) * 2022-05-27 2025-02-11 索尼半导体解决方案公司 半导体器件，电子装置及制造方法

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