JP4429575B2 - レーザー照射装置及び半導体装置の作製方法 - Google Patents

レーザー照射装置及び半導体装置の作製方法 Download PDF

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Publication number
JP4429575B2
JP4429575B2 JP2002232253A JP2002232253A JP4429575B2 JP 4429575 B2 JP4429575 B2 JP 4429575B2 JP 2002232253 A JP2002232253 A JP 2002232253A JP 2002232253 A JP2002232253 A JP 2002232253A JP 4429575 B2 JP4429575 B2 JP 4429575B2
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Prior art keywords
laser
substrate
laser light
semiconductor film
irradiated
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Expired - Fee Related
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JP2002232253A
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Japanese (ja)
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JP2003133254A5 (OSRAM
JP2003133254A (ja
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幸一郎 田中
舜平 山崎
正明 ▲ひろ▼木
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002232253A priority Critical patent/JP4429575B2/ja
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Publication of JP2003133254A5 publication Critical patent/JP2003133254A5/ja
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JP2002232253A 2001-08-10 2002-08-09 レーザー照射装置及び半導体装置の作製方法 Expired - Fee Related JP4429575B2 (ja)

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JP2002232253A JP4429575B2 (ja) 2001-08-10 2002-08-09 レーザー照射装置及び半導体装置の作製方法

Applications Claiming Priority (3)

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JP2001245095 2001-08-10
JP2001-245095 2001-08-10
JP2002232253A JP4429575B2 (ja) 2001-08-10 2002-08-09 レーザー照射装置及び半導体装置の作製方法

Related Child Applications (1)

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JP2009099709A Division JP5058205B2 (ja) 2001-08-10 2009-04-16 レーザー照射装置

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JP2003133254A JP2003133254A (ja) 2003-05-09
JP2003133254A5 JP2003133254A5 (OSRAM) 2005-12-22
JP4429575B2 true JP4429575B2 (ja) 2010-03-10

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JP2002232253A Expired - Fee Related JP4429575B2 (ja) 2001-08-10 2002-08-09 レーザー照射装置及び半導体装置の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4361762B2 (ja) * 2003-06-11 2009-11-11 東京エレクトロン株式会社 熱処理方法
JP2005011941A (ja) * 2003-06-18 2005-01-13 Tokyo Electron Ltd 半導体製造装置及び熱処理方法
JP4854244B2 (ja) * 2005-09-20 2012-01-18 東芝モバイルディスプレイ株式会社 レーザアニール方法およびその装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6239138A (ja) * 1985-08-13 1987-02-20 Omron Tateisi Electronics Co Ｘｙステ−ジ
JPH0788850B2 (ja) * 1986-01-14 1995-09-27 光洋精工株式会社 磁気浮上スライド
JPH0763055B2 (ja) * 1986-03-18 1995-07-05 富士通株式会社 レ−ザアニ−ル装置
JPH02181419A (ja) * 1989-01-06 1990-07-16 Hitachi Ltd レーザアニール方法
JP2780837B2 (ja) * 1990-01-24 1998-07-30 住友重機械工業株式会社 可動ステージ装置
JPH05104276A (ja) * 1991-10-16 1993-04-27 Toshiba Corp レーザ加工装置およびレーザによる加工方法
JPH05238548A (ja) * 1992-02-27 1993-09-17 Ntn Corp エアスライド装置
JPH0679487A (ja) * 1992-05-28 1994-03-22 Nec Corp レーザ加工機
JPH07168040A (ja) * 1993-12-14 1995-07-04 Nippon Steel Corp 半導体レーザー集光装置
JP3119803B2 (ja) * 1995-11-15 2000-12-25 アルプス電気株式会社 Ｘｙテーブル
JP2000019362A (ja) * 1998-07-07 2000-01-21 Nec Corp アレイ型半導体レーザ用光結合装置及び該アレイ型半導体レーザを用いた固体レーザ装置
JP3504528B2 (ja) * 1999-03-18 2004-03-08 株式会社日本製鋼所 レーザ光照射装置
JP3451477B2 (ja) * 1999-11-26 2003-09-29 住友重機械工業株式会社 レーザアニーリング装置
JP2002231655A (ja) * 2001-01-30 2002-08-16 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール装置

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