JP4421081B2 - パワーモジュールとその製造方法 - Google Patents

パワーモジュールとその製造方法 Download PDF

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Publication number
JP4421081B2
JP4421081B2 JP2000169388A JP2000169388A JP4421081B2 JP 4421081 B2 JP4421081 B2 JP 4421081B2 JP 2000169388 A JP2000169388 A JP 2000169388A JP 2000169388 A JP2000169388 A JP 2000169388A JP 4421081 B2 JP4421081 B2 JP 4421081B2
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JP
Japan
Prior art keywords
insulator layer
power module
lead
semiconductor chip
thermosetting resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000169388A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001057408A5 (enrdf_load_stackoverflow
JP2001057408A (ja
Inventor
誠一 中谷
浩一 平野
光洋 松尾
浩之 半田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2000169388A priority Critical patent/JP4421081B2/ja
Publication of JP2001057408A publication Critical patent/JP2001057408A/ja
Publication of JP2001057408A5 publication Critical patent/JP2001057408A5/ja
Application granted granted Critical
Publication of JP4421081B2 publication Critical patent/JP4421081B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2000169388A 1999-06-09 2000-06-06 パワーモジュールとその製造方法 Expired - Fee Related JP4421081B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000169388A JP4421081B2 (ja) 1999-06-09 2000-06-06 パワーモジュールとその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-162541 1999-06-09
JP16254199 1999-06-09
JP2000169388A JP4421081B2 (ja) 1999-06-09 2000-06-06 パワーモジュールとその製造方法

Publications (3)

Publication Number Publication Date
JP2001057408A JP2001057408A (ja) 2001-02-27
JP2001057408A5 JP2001057408A5 (enrdf_load_stackoverflow) 2007-04-19
JP4421081B2 true JP4421081B2 (ja) 2010-02-24

Family

ID=26488297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000169388A Expired - Fee Related JP4421081B2 (ja) 1999-06-09 2000-06-06 パワーモジュールとその製造方法

Country Status (1)

Country Link
JP (1) JP4421081B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4200285B2 (ja) * 2003-04-02 2008-12-24 パナソニック株式会社 回路基板の製造方法
EP1686512A1 (fr) * 2005-02-01 2006-08-02 NagraID S.A. Procédé de placement d'un ensemble électronique sur un substrat et dispositif de placement d'un tel ensemble
EP1909324A4 (en) 2005-09-27 2012-09-26 Panasonic Corp THERMAL DISSIPATION WIRING BOARD, ITS MANUFACTURING METHOD AND ELECTRICAL DEVICE EMPLOYING THE SAME
JP4978235B2 (ja) * 2007-02-26 2012-07-18 パナソニック株式会社 混成実装用熱伝導基板とその製造方法及び回路モジュール
JP2009071059A (ja) * 2007-09-13 2009-04-02 Sanyo Electric Co Ltd 半導体装置
KR100957218B1 (ko) * 2007-12-27 2010-05-11 삼성전기주식회사 발광 다이오드 유니트
JP2010161425A (ja) * 2010-04-26 2010-07-22 Panasonic Corp モジュールの製造方法と、その製造設備
JP2012099697A (ja) * 2010-11-04 2012-05-24 Denki Kagaku Kogyo Kk 回路基板、電子機器
JP2012169440A (ja) * 2011-02-14 2012-09-06 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2013110264A (ja) * 2011-11-21 2013-06-06 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法
JP6048481B2 (ja) * 2014-11-27 2016-12-21 株式会社豊田自動織機 電子機器

Also Published As

Publication number Publication date
JP2001057408A (ja) 2001-02-27

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