JP4410068B2 - 半導体ウエハ支持板及び半導体装置の製造方法 - Google Patents
半導体ウエハ支持板及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4410068B2 JP4410068B2 JP2004264730A JP2004264730A JP4410068B2 JP 4410068 B2 JP4410068 B2 JP 4410068B2 JP 2004264730 A JP2004264730 A JP 2004264730A JP 2004264730 A JP2004264730 A JP 2004264730A JP 4410068 B2 JP4410068 B2 JP 4410068B2
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- Prior art keywords
- semiconductor wafer
- support plate
- wafer support
- hole
- semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (5)
- 両面を貫通する貫通孔が設けられ、前記貫通孔の部分により素子を形成する表面の電極が、反対側の裏面へ引き出される半導体ウエハを、支持するための半導体ウエハ支持板であって、
少なくとも1 個以上の前記貫通孔を含む範囲に、両面を貫通し、前記半導体ウエハの貫通孔よりも開口面積が広い開口部が設けられたことを特徴とする半導体ウエハ支持板。 - 両面を貫通する貫通孔が設けられ、前記貫通孔の部分により、素子を形成する表面の電極が、反対側の裏面へ引き出される半導体ウエハを、支持するための半導体ウエハ支持板であって、
前記半導体ウエハを支持する側の面の少なくとも1 個以上の前記貫通孔を含む範囲に、前記半導体ウエハの貫通孔よりも開口面積が広い凹部が設けられたことを特徴とする半導体ウエハ支持板。 - 前記凹部の一部が、両面を貫通していることを特徴とする請求項2記載の半導体ウエハ支持板。
- 前記半導体ウエハの位置を合わせるための位置合わせ用のマークを有することを特徴とする請求項1〜3いずれか1項記載の半導体ウエハ支持板。
- 請求項1〜4いずれか1項記載の半導体ウエハ支持板によって前記半導体ウエハを支持し、少なくとも前記貫通孔部分に加工を施すことを特徴とする半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004264730A JP4410068B2 (ja) | 2004-09-10 | 2004-09-10 | 半導体ウエハ支持板及び半導体装置の製造方法 |
TW094130167A TWI277167B (en) | 2004-09-10 | 2005-09-02 | Semiconductor wafer supporting plate and method for manufacturing semiconductor device |
US11/221,763 US20060102290A1 (en) | 2004-09-10 | 2005-09-09 | Wafer support plate, holding method of thin wafer, and manufacturing method of semiconductor device |
KR1020050083991A KR100650464B1 (ko) | 2004-09-10 | 2005-09-09 | 웨이퍼 지지판, 박막 웨이퍼의 유지 방법 및 반도체 장치의제조 방법 |
CN2005101025793A CN1747154B (zh) | 2004-09-10 | 2005-09-12 | 晶片支持板、薄膜晶片的保持方法和半导体器件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004264730A JP4410068B2 (ja) | 2004-09-10 | 2004-09-10 | 半導体ウエハ支持板及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006080398A JP2006080398A (ja) | 2006-03-23 |
JP4410068B2 true JP4410068B2 (ja) | 2010-02-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004264730A Expired - Fee Related JP4410068B2 (ja) | 2004-09-10 | 2004-09-10 | 半導体ウエハ支持板及び半導体装置の製造方法 |
Country Status (1)
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JP (1) | JP4410068B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014110262A (ja) * | 2012-11-30 | 2014-06-12 | Dainippon Printing Co Ltd | 剥離装置および剥離方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2014318702B2 (en) | 2013-09-11 | 2019-11-21 | Aim Targeted Therapies, Inc. | Hypertonic antimicrobial therapeutic compositions |
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2004
- 2004-09-10 JP JP2004264730A patent/JP4410068B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014110262A (ja) * | 2012-11-30 | 2014-06-12 | Dainippon Printing Co Ltd | 剥離装置および剥離方法 |
Also Published As
Publication number | Publication date |
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JP2006080398A (ja) | 2006-03-23 |
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