JP4403967B2 - 圧電デバイスの製造方法 - Google Patents
圧電デバイスの製造方法 Download PDFInfo
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- JP4403967B2 JP4403967B2 JP2004511233A JP2004511233A JP4403967B2 JP 4403967 B2 JP4403967 B2 JP 4403967B2 JP 2004511233 A JP2004511233 A JP 2004511233A JP 2004511233 A JP2004511233 A JP 2004511233A JP 4403967 B2 JP4403967 B2 JP 4403967B2
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- piezoelectric
- piezoelectric ceramic
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- piezoelectric device
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 11
- 239000000919 ceramic Substances 0.000 claims description 93
- 239000000203 mixture Substances 0.000 claims description 69
- 239000000843 powder Substances 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 238000010304 firing Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000010298 pulverizing process Methods 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 16
- 238000005452 bending Methods 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 239000011701 zinc Substances 0.000 description 11
- 239000007772 electrode material Substances 0.000 description 8
- 239000002003 electrode paste Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910001252 Pd alloy Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
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- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
参考例1における圧電磁器組成物と、その製造方法を説明する。
参考例2における圧電磁器組成物について説明する。参考例2では、参考例1と同じ基本組成式Pb(Zn1/3Nb2/3)xZryTizO3(で金属元素Pbを1とした時の金属元素Zn1/3Nb2/3のモル比をx、金属元素Zrのモル比をy、金属元素Tiのモル比をzである圧電磁器組成物を用いた。
参考例3における圧電磁器組成物について説明する。
本発明の参考例4では、参考例1〜3による圧電磁器組成物を用いた積層圧電デバイスとして積層圧電トランスとその製造方法を説明する。
本発明の実施の形態の形態及び比較例による積層圧電デバイスである積層圧電トランスを説明する。
2a,2b 入力用内部電極
2c 出力用内部電極
3a,3b 入力用外部電極
3c 出力用外部電極
4 圧電セラミック
Claims (6)
- Pb(Zn1/3Nb2/3)O3とPbTiO3とPbZrO3との三成分系であり、基本組成式がPb(Zn1/3Nb2/3)xZryTizO3、0.90<x+y+z<1.0、0.01<x<0.20、0.25<y<0.60、0.25<z<0.60である組成物の原料を準備する工程と、前記原料を焼く工程と、前記焼かれた原料を粉砕する工程と、前記粉砕された原料でセラミックシートを作製する工程と、前記セラミックシートと銀を含むペーストとを積層して積層体を作製する工程と、前記積層体を焼成温度が830℃以上900℃以下で焼成する工程と、を備え、前記焼かれた原料を粉砕する工程は、前記焼かれた原料を平均粒子径が0.6μm以上1.5μm以下となるよう粉砕する工程を含む、圧電デバイスの製造方法。
- 前記積層体を焼成する工程で得られる焼結体の平均結晶粒子径は2μm以上4μm以下である、請求項1に記載の圧電デバイスの製造方法。
- 前記ペーストは、前記焼かれた原料を粉砕する工程で得られる粉を含有する、請求項1に記載の圧電デバイスの製造方法。
- 前記ペーストは、Zn、Nb、Ti、Zr、Sn、Mnから選ばれる少なくとも1つの元素の化合物をさらに含有する、請求項3に記載の圧電デバイスの製造方法。
- 前記組成物は、Snを含む化合物を、SnO2に換算して2.0重量%以下含有する、請求項1に記載の圧電デバイスの製造方法。
- 前記組成物は、Mnを含む化合物を、MnO2に換算して2.0重量%以下含有する、請求項1に記載の圧電デバイスの製造方法。
Applications Claiming Priority (3)
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JP2002163939 | 2002-06-05 | ||
JP2002163939 | 2002-06-05 | ||
PCT/JP2003/006919 WO2003104163A1 (ja) | 2002-06-05 | 2003-06-02 | 圧電磁器組成物とこれを用いた積層圧電デバイスおよびその製造方法 |
Publications (2)
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JPWO2003104163A1 JPWO2003104163A1 (ja) | 2005-10-06 |
JP4403967B2 true JP4403967B2 (ja) | 2010-01-27 |
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JP2004511233A Expired - Fee Related JP4403967B2 (ja) | 2002-06-05 | 2003-06-02 | 圧電デバイスの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7323073B2 (ja) |
JP (1) | JP4403967B2 (ja) |
KR (1) | KR100630417B1 (ja) |
CN (1) | CN1323983C (ja) |
AU (1) | AU2003241724A1 (ja) |
WO (1) | WO2003104163A1 (ja) |
Cited By (1)
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US9391258B2 (en) | 2011-02-18 | 2016-07-12 | Panasonic Intellectual Property Management Co., Ltd. | Piezoelectric element |
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CN100344576C (zh) * | 2005-09-09 | 2007-10-24 | 中国科学院上海硅酸盐研究所 | 镧掺杂铌锌锆钛酸铅压电陶瓷材料及其制备方法 |
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JP5028834B2 (ja) * | 2006-03-22 | 2012-09-19 | Tdk株式会社 | 積層型圧電素子の製造方法 |
SI2207758T1 (en) * | 2007-10-18 | 2018-01-31 | Ceramtec Gmbh | Piezoceramic multilayer element |
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JP2010103521A (ja) * | 2008-09-29 | 2010-05-06 | Fujifilm Corp | 圧電アクチュエータの製造方法、液体吐出ヘッド、及び画像形成装置 |
US11064023B2 (en) | 2009-05-27 | 2021-07-13 | Verizon Media Inc. | Method for actively sharing available bandwidth to consumer nodes in a peer-to-peer network for delivery of video streams |
JP2010018514A (ja) * | 2009-07-13 | 2010-01-28 | Seiko Epson Corp | 圧電材料の製造方法、圧電素子および圧電発電機 |
KR101248797B1 (ko) * | 2010-09-30 | 2013-04-03 | 티디케이가부시기가이샤 | 압전 자기 및 이를 구비하는 압전 소자, 및 이러한 압전 소자를 구비하는 압전 디바이스 |
JP5482607B2 (ja) * | 2010-09-30 | 2014-05-07 | Tdk株式会社 | 圧電磁器、圧電素子及び圧電デバイス |
CN102603297B (zh) * | 2012-04-05 | 2013-07-10 | 天津大学 | 一种低温烧结微波介质陶瓷及其制备方法 |
CN106518070B (zh) * | 2016-10-19 | 2019-06-04 | 常州大学 | 一种多元系高压电活性压电陶瓷材料及其制备方法 |
CN111606707B (zh) * | 2020-06-05 | 2021-11-30 | 江苏波速传感器有限公司 | 一种容温稳定性压电陶瓷材料以及制备方法 |
CN113651614B (zh) * | 2021-07-15 | 2022-11-15 | 北京工业大学 | 一种压电能量收集用兼具高和热稳定压电性能的陶瓷材料及制备 |
CN115385683B (zh) * | 2022-08-29 | 2023-07-25 | 西安交通大学 | 一种兼具高居里温度和高压电系数的压电陶瓷材料及其制备方法 |
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-
2003
- 2003-06-02 AU AU2003241724A patent/AU2003241724A1/en not_active Abandoned
- 2003-06-02 KR KR1020047019018A patent/KR100630417B1/ko not_active IP Right Cessation
- 2003-06-02 JP JP2004511233A patent/JP4403967B2/ja not_active Expired - Fee Related
- 2003-06-02 US US10/489,710 patent/US7323073B2/en not_active Expired - Fee Related
- 2003-06-02 WO PCT/JP2003/006919 patent/WO2003104163A1/ja active Application Filing
- 2003-06-02 CN CNB038127849A patent/CN1323983C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9391258B2 (en) | 2011-02-18 | 2016-07-12 | Panasonic Intellectual Property Management Co., Ltd. | Piezoelectric element |
Also Published As
Publication number | Publication date |
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KR100630417B1 (ko) | 2006-09-29 |
JPWO2003104163A1 (ja) | 2005-10-06 |
US7323073B2 (en) | 2008-01-29 |
AU2003241724A1 (en) | 2003-12-22 |
CN1659115A (zh) | 2005-08-24 |
KR20050008737A (ko) | 2005-01-21 |
CN1323983C (zh) | 2007-07-04 |
US20040238100A1 (en) | 2004-12-02 |
WO2003104163A1 (ja) | 2003-12-18 |
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