JP4403882B2 - Deposition system - Google Patents

Deposition system Download PDF

Info

Publication number
JP4403882B2
JP4403882B2 JP2004160758A JP2004160758A JP4403882B2 JP 4403882 B2 JP4403882 B2 JP 4403882B2 JP 2004160758 A JP2004160758 A JP 2004160758A JP 2004160758 A JP2004160758 A JP 2004160758A JP 4403882 B2 JP4403882 B2 JP 4403882B2
Authority
JP
Japan
Prior art keywords
sealing member
opening sealing
electrode
container
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004160758A
Other languages
Japanese (ja)
Other versions
JP2005336590A (en
Inventor
大 北原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP2004160758A priority Critical patent/JP4403882B2/en
Priority to TW094106005A priority patent/TWI262961B/en
Priority to KR1020050036490A priority patent/KR100680239B1/en
Priority to CNA200510072223XA priority patent/CN1757790A/en
Publication of JP2005336590A publication Critical patent/JP2005336590A/en
Application granted granted Critical
Publication of JP4403882B2 publication Critical patent/JP4403882B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B66—HOISTING; LIFTING; HAULING
    • B66F—HOISTING, LIFTING, HAULING OR PUSHING, NOT OTHERWISE PROVIDED FOR, e.g. DEVICES WHICH APPLY A LIFTING OR PUSHING FORCE DIRECTLY TO THE SURFACE OF A LOAD
    • B66F7/00—Lifting frames, e.g. for lifting vehicles; Platform lifts
    • B66F7/28—Constructional details, e.g. end stops, pivoting supporting members, sliding runners adjustable to load dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B66—HOISTING; LIFTING; HAULING
    • B66F—HOISTING, LIFTING, HAULING OR PUSHING, NOT OTHERWISE PROVIDED FOR, e.g. DEVICES WHICH APPLY A LIFTING OR PUSHING FORCE DIRECTLY TO THE SURFACE OF A LOAD
    • B66F7/00—Lifting frames, e.g. for lifting vehicles; Platform lifts
    • B66F7/06—Lifting frames, e.g. for lifting vehicles; Platform lifts with platforms supported by levers for vertical movement
    • B66F7/065—Scissor linkages, i.e. X-configuration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B66—HOISTING; LIFTING; HAULING
    • B66F—HOISTING, LIFTING, HAULING OR PUSHING, NOT OTHERWISE PROVIDED FOR, e.g. DEVICES WHICH APPLY A LIFTING OR PUSHING FORCE DIRECTLY TO THE SURFACE OF A LOAD
    • B66F7/00—Lifting frames, e.g. for lifting vehicles; Platform lifts
    • B66F7/06—Lifting frames, e.g. for lifting vehicles; Platform lifts with platforms supported by levers for vertical movement
    • B66F7/08—Lifting frames, e.g. for lifting vehicles; Platform lifts with platforms supported by levers for vertical movement hydraulically or pneumatically operated

Description

本発明は、生産性の高い成膜装置を有する成膜システムに関する。 The present invention relates to a film forming system having a highly productive film forming apparatus.

平行平板タイプのプラズマＣＶＤ装置では、基板が載置される基板ホルダと対向するように放電電極が設けられている。そして、反応ガスを供給し、放電電極に高周波電力を印加し、プラズマを発生させ、基板の表面に成膜を行う。プラズマＣＶＤ装置によって基板に成膜を行うと、放電電極およびその周辺部に生成膜が形成される。この生成膜はＲＦ電極の放電作用の妨げになったり、チャンバ内雰囲気の清浄度を低下させる。プラズマＣＶＤ装置の放電電極に形成された生成物を除去をする方法として、パージガスを使用して除去する方法が知られている（特許文献１）。この方法を用いるとＲＦ電極に付着した生成膜は除去できるが、パージガスの当たらない放電電極周辺部に付着した生成物を除去できない。このため、放電電極およびその周辺部を完全にクリーニングするためには、チャンバを開放して酸やブラストなどによって丁寧に生成膜を取り除く必要がある。   In a parallel plate type plasma CVD apparatus, a discharge electrode is provided so as to face a substrate holder on which a substrate is placed. Then, a reactive gas is supplied, high frequency power is applied to the discharge electrode, plasma is generated, and film formation is performed on the surface of the substrate. When a film is formed on the substrate by the plasma CVD apparatus, a generated film is formed on the discharge electrode and its peripheral part. This generated film hinders the discharge action of the RF electrode and reduces the cleanliness of the atmosphere in the chamber. As a method for removing a product formed on a discharge electrode of a plasma CVD apparatus, a method using a purge gas is known (Patent Document 1). When this method is used, the product film adhering to the RF electrode can be removed, but the product adhering to the periphery of the discharge electrode not exposed to the purge gas cannot be removed. For this reason, in order to completely clean the discharge electrode and its peripheral portion, it is necessary to open the chamber and carefully remove the generated film by acid or blasting.

特開２００２−２１２７３０号公報JP 2002-221730 A

しかしながら、成膜直後は、放電電極は、プレートヒータからの放射熱や放電により過熱され高温化している。よって、丁寧に生成膜を取り除く作業を始めるためには、放電電極が冷めるまで長時間待たなければならない。その間はプラズマＣＶＤ装置を使用できないので、生産能率の低下が大きいという問題点があった。   However, immediately after the film formation, the discharge electrode is overheated due to radiant heat and discharge from the plate heater and is heated. Therefore, in order to start the operation of carefully removing the generated film, it is necessary to wait for a long time until the discharge electrode cools down. In the meantime, since the plasma CVD apparatus cannot be used, there is a problem that the production efficiency is greatly reduced.

（１）請求項１の発明による成膜システムは、基板と電極との間の放電作用を利用して前記基板に成膜する装置であって、上部に開口部を有し、前記基板が納められる容器、および、前記開口部に脱着可能に設けられ、前記基板と対向するように前記開口部を密閉するとともに、前記容器内の基板と対向する電極装着部に前記電極を装着した第１開口密閉部材を備える成膜装置と、前記第1開口密閉部材の電極装着部周辺が清掃された交換用の第２開口密閉部材を収容するストッカと、前記容器内の前記基板に対して鉛直方向に離れる方向に移動して前記第１開口密閉部材を前記容器から取り外すとともに、前記ストッカから前記第２開口密閉部材を取り出して前記容器の上方まで搬送するとともに、前記容器内の前記基板に対して鉛直方向に接近する方向に移動して前記第２開口密閉部材を前記容器に設置する交換装置とを備えることを特徴とする。(1) A film forming system according to a first aspect of the present invention is an apparatus for forming a film on the substrate by utilizing a discharge action between the substrate and an electrode, and has an opening in the upper portion, and the substrate is accommodated And a first opening that is detachably provided in the opening, seals the opening so as to face the substrate, and attaches the electrode to an electrode attachment that faces the substrate in the container. A film forming apparatus including a sealing member, a stocker that houses a replacement second opening sealing member in which the periphery of the electrode mounting portion of the first opening sealing member is cleaned, and a vertical direction with respect to the substrate in the container While moving away from the container, the first opening sealing member is removed from the container, the second opening sealing member is taken out from the stocker and conveyed to the upper side of the container, and is perpendicular to the substrate in the container. In the direction And an exchange device that moves in the approaching direction and installs the second opening sealing member in the container.
（２）請求項２の発明は、請求項１の成膜システムにおいて、前記交換装置は、前記第１および第２開口密閉部材を保持するアームと、前記アームが保持する前記第１開口密閉部材を前記容器から取り外してストッカに搬送し、前記第１開口密閉部材が取り外された前記開口部に前記アームで保持した前記第２開口密閉部材を搬送する搬送機構とを備え、前記第１および第２開口密閉部材には、前記アームと係合するための係合部が設けられ、(2) The invention according to claim 2 is the film forming system according to claim 1, wherein the exchange device includes an arm that holds the first and second opening sealing members, and the first opening sealing member that the arms hold. And a transport mechanism for transporting the second opening sealing member held by the arm to the opening from which the first opening sealing member has been removed. The two-opening sealing member is provided with an engaging portion for engaging with the arm,
前記アームには、前記係合部に係合して前記第1および第２開口密閉部材を保持する保持機構が設けられていることを特徴とする。  The arm is provided with a holding mechanism that engages with the engaging portion and holds the first and second opening sealing members.
（３）請求項３の発明は、請求項２の成膜システムにおいて、前記成膜装置を複数備えるとともに、前記複数の成膜装置に対して前記交換装置を１台設けることを特徴とする。(3) According to a third aspect of the present invention, in the film forming system according to the second aspect, a plurality of the film forming apparatuses are provided, and one exchange device is provided for the plurality of film forming apparatuses.

本発明によれば、電極およびその周辺部がよごれたら開口密閉部材を取り換えればよいので、成膜装置の電極およびその周辺部をクリーニングする際の成膜装置の停止時間を短くすることができ、成膜工程の生産能率を高くすることができる。   According to the present invention, when the electrode and its peripheral part are dirty, the opening sealing member may be replaced. Therefore, the time for stopping the film forming apparatus when cleaning the electrode of the film forming apparatus and its peripheral part can be shortened. The production efficiency of the film forming process can be increased.

図１を参照しながら本発明の実施形態のプラズマＣＶＤ装置を説明する。本発明のプラズマＣＶＤ装置１は、成膜チャンバを構成する真空容器１０２と開口密閉部材１０１を有している。開口密閉部材１０１は、真空容器１０２の上部に形成された開口１０２ａを覆うように着脱可能に取り付けられている。開口密閉部材１０１と真空容器１０２との間にはシール１１２が設けられている。真空容器１０２に開口密閉部材１０１を取り付ける際、開口密閉部材１０１の位置がずれないようにするため、位置決めピン１１１が設けられている。また、開口密閉部材１０１は高周波電源１０９と接続している。真空容器１０２のヒータ１０７上には、成膜対象である複数の基板１１０を載せたワークトレイ１０８が載置される。   A plasma CVD apparatus according to an embodiment of the present invention will be described with reference to FIG. The plasma CVD apparatus 1 of the present invention has a vacuum container 102 and an opening sealing member 101 that constitute a film forming chamber. The opening sealing member 101 is detachably attached so as to cover the opening 102 a formed in the upper part of the vacuum vessel 102. A seal 112 is provided between the opening sealing member 101 and the vacuum container 102. When the opening sealing member 101 is attached to the vacuum container 102, a positioning pin 111 is provided so that the position of the opening sealing member 101 does not shift. The opening sealing member 101 is connected to a high frequency power source 109. On the heater 107 of the vacuum vessel 102, a work tray 108 on which a plurality of substrates 110 to be deposited is placed.

電極１０３は、開口密閉部材１０１の底部に設けられ、吊り具１０６は開口密閉部材１０１の上部に設けられている。また、開口密閉部材１０１には反応ガス路１０５が設けられている。開口密閉部材１０１の縁部１０１ａは絶縁部材１０４と金属部材で狭持した三層構造となっており、開口密閉部材１０１と真空容器１０２は電気的に絶縁されている。開口密閉部材１０１と真空容器１０２で構成される成膜チャンバの内部は減圧または真空の状態になるので、その圧力によって、開口密閉部材１０１と真空容器１０２は固定される。また、減圧または真空の圧力により固定されるが、さらにボルトなどを利用して固定してもよい。ただし、開口密閉部材１０１が容易に取り外せるようにするため、真空容器１０２を組み立てる際用いられるボルトよりも容易に外せるようにする必要がある。本実施の形態では、開口密閉部材１０１を真空容器１０２から分離することができるので、開口密閉部材１０１と電極１０３とを一体で交換することが可能である。   The electrode 103 is provided at the bottom of the opening sealing member 101, and the hanging tool 106 is provided at the top of the opening sealing member 101. The opening sealing member 101 is provided with a reaction gas path 105. The edge 101a of the opening sealing member 101 has a three-layer structure sandwiched between an insulating member 104 and a metal member, and the opening sealing member 101 and the vacuum vessel 102 are electrically insulated. Since the inside of the film forming chamber composed of the opening sealing member 101 and the vacuum container 102 is in a reduced pressure or vacuum state, the opening sealing member 101 and the vacuum container 102 are fixed by the pressure. Moreover, although it fixes by pressure reduction or a vacuum pressure, you may fix using a volt | bolt etc. further. However, in order to allow the opening sealing member 101 to be easily removed, it is necessary to make it easier to remove than the bolt used when assembling the vacuum vessel 102. In this embodiment, since the opening sealing member 101 can be separated from the vacuum container 102, it is possible to replace the opening sealing member 101 and the electrode 103 integrally.

成膜ガスは、反応ガス路１０５からプラズマＣＶＤ装置１の内部に導入される。反応ガス路１０５から導入されるガスは、Ｎ２ガス、Ｏ２ガス、Ｈ２ガス、ＮＯ２ガス、ＮＯガス、ＮＨ３ガスなどの反応性活性種の原料となるガス、Ａｒガス、Ｈｅガス、Ｎｅガス、Ｋｒガス、Ｘｅガスなどの希ガス、ＳｉＨ４ガス、Ｓｉ２Ｈ６ガス、ＣＨ４ガスなどの薄膜の成分となるガスである。反応ガス路１０５から導入された反応ガスは電極１０３によって分散される。電極１０３は、反応ガスに電圧を印加する電極としての役割を果たすとともに反応ガスを分散させる役割も果たす。電極１０３は、分散孔をあけた金属板、またはステンレス粒子、ニッケル粒子など金属粒子を焼結して成形した多孔質材で構成される。電極１０３により反応ガスは均一に分散され、均質なプラズマＰを生成することができる。 The film forming gas is introduced into the plasma CVD apparatus 1 from the reaction gas path 105. The gas introduced from the reaction gas path 105 is a gas that is a raw material for reactive active species such as N 2 gas, O 2 gas, H 2 gas, NO 2 gas, NO gas, and NH 3 gas, Ar gas, and He gas. , Ne gas, Kr gas, Xe gas, and other rare gases, SiH 4 gas, Si 2 H 6 gas, CH 4 gas, and other gas components. The reaction gas introduced from the reaction gas path 105 is dispersed by the electrode 103. The electrode 103 serves as an electrode for applying a voltage to the reaction gas and also serves to disperse the reaction gas. The electrode 103 is composed of a metal plate having dispersed holes, or a porous material formed by sintering metal particles such as stainless particles and nickel particles. The reaction gas is uniformly dispersed by the electrode 103, and a homogeneous plasma P can be generated.

電極１０３によって分散された反応ガスは、高周波電源１０９によって印加された高周波電力によって電離され、プラズマＰが発生する。このプラズマＰを利用して基板１１０上に薄膜を生成する。   The reaction gas dispersed by the electrode 103 is ionized by the high frequency power applied by the high frequency power source 109, and plasma P is generated. A thin film is generated on the substrate 110 using the plasma P.

次に、本発明の開口密閉部材１０１の真空容器１０２からの分離による取り外しについて、図２を参照して説明する。
開口密閉部材１０１は、プラズマＣＶＤ装置１とは別に設けられた交換装置によって取り外され、移動される。交換装置についての詳細は後述する。２０１は交換装置に設けられたアームであり、アーム２０１は上下方向に駆動される。アーム２０１には、エアシリンダ２０３が設けられており、エアシリンダ２０３のロッドの先端には係合部２０２が取り付けられている。エアシリンダ２０３を駆動すると、係合部２０２が図の左右方向に移動する。開口密閉部材１０１は次のようにして取り外される。 Next, removal by separation of the opening sealing member 101 of the present invention from the vacuum vessel 102 will be described with reference to FIG.
The opening sealing member 101 is removed and moved by an exchange device provided separately from the plasma CVD apparatus 1. Details of the exchange device will be described later. Reference numeral 201 denotes an arm provided in the exchange device, and the arm 201 is driven in the vertical direction. The arm 201 is provided with an air cylinder 203, and an engagement portion 202 is attached to the tip of the rod of the air cylinder 203. When the air cylinder 203 is driven, the engaging portion 202 moves in the left-right direction in the figure. The opening sealing member 101 is removed as follows.

アーム２０１を開口密閉部材１０１に設けられた吊り具１０６と同じ高さまで移動する。そして、エアシリンダ２０３により係合部２０２を移動して吊り具１０６と係合させる。そしてアーム２０１を上方へ移動すると図２に示すように、開口密閉部材１０１と電極１０３とが一体に真空容器１０２から取り外される。   The arm 201 is moved to the same height as the hanger 106 provided on the opening sealing member 101. Then, the engagement portion 202 is moved by the air cylinder 203 and engaged with the hanger 106. When the arm 201 is moved upward, the opening sealing member 101 and the electrode 103 are integrally removed from the vacuum vessel 102 as shown in FIG.

このように、本発明の実施形態のプラズマＣＶＤ装置１では、電極１０３が開口密閉部材１０１と一体に取り外せるので、新品またはクリーニング済みの電極１０３が取り付けられた別の開口密閉部材１０１と取り換えることができる。交換後、直ちにプラズマＣＶＤ装置を稼働することができるので、メンテナンスのためにプラズマＣＶＤ装置１を停止させる時間は、開口密閉部材１０１の交換時間だけであるので、メンテナンスによるプラズマＣＶＤ装置の停止時間の短縮を大いに図ることができる。   As described above, in the plasma CVD apparatus 1 according to the embodiment of the present invention, the electrode 103 can be removed integrally with the opening sealing member 101, so that it can be replaced with another opening sealing member 101 to which a new or cleaned electrode 103 is attached. it can. Since the plasma CVD apparatus can be operated immediately after the replacement, the time for stopping the plasma CVD apparatus 1 for maintenance is only the replacement time of the opening sealing member 101. The reduction can be greatly achieved.

次に、交換装置について、図３（ａ）および（ｂ）を参照して説明する。図３（ａ）は交換装置３０１の側面図である。図３（ｂ）は交換装置３０１の平面図である。交換装置３０１とともに、開口密閉部材１０１、真空容器１０２、プラズマＣＶＤ装置にワークトレイ１０８を搬入するために設けられているロードロックチャンバー３０３も参考のため示す。交換装置３０１には上述のアーム２０１が設けられている。アーム２０１は水平方向（矢印Ａ）および高さ方向（矢印Ｂ）の移動が可能である。交換アーム２０１には、上述した係合部２０２、エアシリンダ２０３が備えられている。また、交換装置３０１はレール３０２上を横方向（矢印Ｃ）に移動可能である。真空容器１０２の隣には電極ストッカ３０４が設けられている。電極ストッカ３０４には複数の棚が上下に設けられており、そのうちの一つの棚に取り外した開口密閉部材１０１が置かれる。また、他の棚には新品またはクリーニング済みの開口密閉部材１０１が置いてある。   Next, the exchange device will be described with reference to FIGS. 3 (a) and 3 (b). FIG. 3A is a side view of the exchange device 301. FIG. 3B is a plan view of the exchange device 301. Along with the exchange device 301, an opening sealing member 101, a vacuum vessel 102, and a load lock chamber 303 provided for carrying the work tray 108 into the plasma CVD apparatus are also shown for reference. The exchange device 301 is provided with the arm 201 described above. The arm 201 can move in the horizontal direction (arrow A) and the height direction (arrow B). The exchange arm 201 is provided with the engaging portion 202 and the air cylinder 203 described above. Further, the exchange device 301 can move on the rail 302 in the horizontal direction (arrow C). Next to the vacuum vessel 102, an electrode stocker 304 is provided. The electrode stocker 304 is provided with a plurality of shelves above and below, and the opening sealing member 101 removed is placed on one of the shelves. In addition, a new or cleaned opening sealing member 101 is placed on another shelf.

交換装置３０１は開口密閉部材１０１を取り外し、レール３０２上を電極ストッカ３０４まで移動する。そして電極ストッカ３０４に取り外した開口密閉部材１０１を置く。次に新品またはクリーニング済みの開口密閉部材１０１をアーム２０１で取り出す。そしてレール３０２上を真空容器１０２の位置まで移動する。次に新品またはクリーニング済みの開口密閉部材１０１を真空容器１０２の上に取り付けた後に、プラズマＣＶＤ装置１を立ち上げる。電極ストッカ３０４に搬送された開口密閉部材１０１は、クリーニング作業が可能な温度になるまで放置され、その後開口密閉部材１０１はクリーニングなどのメンテナンス作業が行われる。   The exchange device 301 removes the opening sealing member 101 and moves on the rail 302 to the electrode stocker 304. Then, the removed opening sealing member 101 is placed on the electrode stocker 304. Next, the new or cleaned opening sealing member 101 is taken out by the arm 201. Then, it moves on the rail 302 to the position of the vacuum vessel 102. Next, after installing a new or cleaned opening sealing member 101 on the vacuum vessel 102, the plasma CVD apparatus 1 is started up. The opening sealing member 101 conveyed to the electrode stocker 304 is allowed to stand until a temperature at which the cleaning operation can be performed, and then the opening sealing member 101 is subjected to maintenance operations such as cleaning.

このようなプラズマＣＶＤ装置１と交換装置３０１とを備える成膜では、生成物の付着した電極１０３および開口密閉部材１０１をクリーニング済みの電極１０３および開口密閉部材１０１と一体で交換することができるので、交換後直ちにプラズマＣＶＤ装置１を立ち上げることができる。よって電極１０３およびその周辺部のメンテナンスのためのプラズマＣＶＤ装置１の停止時間を短くすることができ、成膜工程の生産性を上げることができる。本発明は、太陽電池の反射防止膜形成工程のように、電極１０３および電極まわりのクリーニングの頻度の高い成膜工程に対して効果が高い。また、特に４００℃以上の高温で成膜する場合、電極１０３が冷めるまでの時間が長いので、本発明の作用効果は大きくなる。   In the film formation including the plasma CVD apparatus 1 and the exchanging apparatus 301, the electrode 103 and the opening sealing member 101 to which the product is attached can be replaced with the cleaned electrode 103 and the opening sealing member 101 integrally. The plasma CVD apparatus 1 can be started up immediately after the replacement. Therefore, the stop time of the plasma CVD apparatus 1 for maintenance of the electrode 103 and its peripheral part can be shortened, and the productivity of the film forming process can be increased. The present invention is highly effective for a film forming process having a high frequency of cleaning around the electrode 103 and the electrodes, such as an antireflection film forming process of a solar cell. In particular, when the film is formed at a high temperature of 400 ° C. or higher, the time until the electrode 103 cools down is long, so that the effect of the present invention is increased.

電極１０３および電極周りのクリーニング時間は、プラズマＣＶＤ装置１の停止時間に影響を与えないので、時間をかけて丁寧にクリーニング作業を行うことができる。このように時間をかけて丁寧にメンテナンスされた電極１０３および開口密閉部材１０１を用いることによって、成膜工程の歩留りを上げることができる。   Since the cleaning time of the electrode 103 and the periphery of the electrode does not affect the stop time of the plasma CVD apparatus 1, it is possible to perform the cleaning work carefully over time. Thus, by using the electrode 103 and the opening sealing member 101 that are carefully maintained over time, the yield of the film forming process can be increased.

このような成膜装置および、成膜装置と交換装置との成膜システムによれば次のような作用効果が得られる。
（１）電極およびその周辺部のメンテナンスによる成膜装置の停止時間を短くすることによって、生産能率を高めることができる。
（２）電極およびその周辺部のメンテナンスを時間をかけて丁寧に行うことができるので、成膜工程の歩留りを上げることができる。 According to such a film forming apparatus and a film forming system of the film forming apparatus and the exchange device, the following operational effects can be obtained.
(1) The production efficiency can be increased by shortening the stop time of the film forming apparatus due to the maintenance of the electrode and its peripheral part.
(2) Since the maintenance of the electrode and its peripheral part can be performed carefully over time, the yield of the film forming process can be increased.

以上の実施の形態では、一台のプラズマＣＶＤ装置１に対して一台の交換装置３０１を設けたが、複数のプラズマＣＶＤ装置１に対して一台の交換装置３０１を設けてもよい。生産性が重視される量産工程のラインにおいて、複数のプラズマＣＶＤ装置１が設置される。本発明の交換装置３０１はレール３０２上を移動が可能であるので、一台の交換装置３０１によって複数のプラズマＣＶＤ装置１の開口密閉部材１０１の交換が可能である。よって本願発明の成膜システムは、複数のプラズマＣＶＤ装置１が並んだ複数の量産工程のラインにおいてさらに大きな効果を奏する。その一例を図４に示す。   In the above embodiment, one exchange apparatus 301 is provided for one plasma CVD apparatus 1, but one exchange apparatus 301 may be provided for a plurality of plasma CVD apparatuses 1. A plurality of plasma CVD apparatuses 1 are installed in a mass production process line where productivity is important. Since the exchanging apparatus 301 of the present invention can move on the rail 302, the opening sealing member 101 of the plurality of plasma CVD apparatuses 1 can be exchanged by one exchanging apparatus 301. Therefore, the film forming system of the present invention is more effective in a plurality of mass production process lines in which a plurality of plasma CVD apparatuses 1 are arranged. An example is shown in FIG.

プラズマＣＶＤ装置１による量産工程のラインは、制御部４０１、カセット設置部４０２、移載機４０３、移載プラットホーム４０４、ロード室４０５およびプラズマＣＶＤ装置１より構成され、この量産工程のラインはＬ１からＬ３に示されるように３つ並んでいる。Ｌ１からＬ３の３つのラインのプラズマＣＶＤ装置１の隣にはレール３０２が敷かれ、その上に交換装置３０１が設置されている。工程ラインＬ３の隣には電極ストッカ３０４が設けられている。制御部４０１は、量産工程のラインを構成する装置を制御するための装置である。カセット設置部４０２は、成膜される基板１１０または、成膜された基板１１０を載せたワークトレイ１０８が入っているカセット４０６が置かれている箇所である。移載機４０３は、ワークトレイ１０８の入ったカセット４０６をカセット設置部４０２と移載プラットホーム４０４の間で移動させる装置である。移載プラットホーム４０４は、カセットから基板１１０を載せたワークトレイ１０８を取り出しロード室４０５に搬入または、ロード室４０５から基板１１０を載せたワークトレイ１０８を取り出しカセット４０６に入れる装置である。ロード室４０５は基板１１０を載せたワークトレイ１０８をプラズマＣＶＤ装置１内に搬入または、プラズマＣＶＤ装置１から搬出する装置である。   The mass production process line by the plasma CVD apparatus 1 includes a control unit 401, a cassette installation unit 402, a transfer machine 403, a transfer platform 404, a load chamber 405, and the plasma CVD apparatus 1. This mass production process line starts from L1. As shown in L3, three are arranged. A rail 302 is laid next to the plasma CVD apparatus 1 in the three lines L1 to L3, and an exchange apparatus 301 is installed thereon. An electrode stocker 304 is provided next to the process line L3. The control unit 401 is a device for controlling devices constituting the mass production process line. The cassette setting unit 402 is a place where a cassette 406 containing a substrate 110 on which a film is formed or a work tray 108 on which the substrate 110 is formed is placed. The transfer machine 403 is a device that moves the cassette 406 containing the work tray 108 between the cassette setting unit 402 and the transfer platform 404. The transfer platform 404 is a device that takes out the work tray 108 loaded with the substrate 110 from the cassette and loads it into the load chamber 405, or takes out the work tray 108 loaded with the substrate 110 from the load chamber 405 and puts it into the cassette 406. The load chamber 405 is a device that carries the work tray 108 on which the substrate 110 is placed into or out of the plasma CVD apparatus 1.

たとえば、量産工程のラインＬ１のプラズマＣＶＤ装置１の電極およびその周辺部がよごれ、電極のメンテナンスが必要となった場合、交換装置３０１はレール３０２上を移動して、量産工程のラインＬ１のプラズマＣＶＤ装置１の隣に移動する。そして、図２のようにプラズマＣＶＤ装置１の開口密閉部材１０１を取り外す。次に、電極ストッカ３０４で新品またはクリーニングされた開口密閉部材１０１と交換する。そして量産工程のラインＬ１のプラズマＣＶＤ装置１の隣まで移動し、開口密閉部材１０１を取り付ける。量産工程のラインＬ２、Ｌ３のプラズマＣＶＤ装置１についても同様に交換する。このようにして、一台の交換装置３０１によって複数の量産工程のラインの生産性を高めることができる。   For example, when the electrode of the plasma CVD apparatus 1 in the mass production process line L1 and its peripheral portion are dirty and the electrode needs to be maintained, the exchange device 301 moves on the rail 302, and plasma in the mass production process line L1. It moves next to the CVD apparatus 1. And the opening sealing member 101 of the plasma CVD apparatus 1 is removed as shown in FIG. Next, the electrode stocker 304 is replaced with a new or cleaned opening sealing member 101. And it moves to the next to the plasma CVD apparatus 1 of the line L1 of a mass production process, and the opening sealing member 101 is attached. The plasma CVD apparatus 1 on the lines L2 and L3 in the mass production process is similarly replaced. In this way, the productivity of a line for a plurality of mass production processes can be increased by one exchange device 301.

本発明の実施形態ではプラズマＣＶＤ装置を示したが、成膜する試料が入った容器の上部に電極を有する成膜装置であれば、特に限定されない。   Although the plasma CVD apparatus is shown in the embodiment of the present invention, the present invention is not particularly limited as long as it is a film forming apparatus having electrodes on the upper part of a container containing a sample to be formed.

特許請求の範囲と実施例との対応関係を説明する。
請求項１の発明の容器は、真空容器２に相当する。請求項２の交換用開口密閉部材は、新品またはクリーニング済みの開口密閉部材１０１に相当する。 The correspondence relationship between the claims and the embodiments will be described.
The container of the invention of claim 1 corresponds to the vacuum container 2. The replacement opening sealing member according to claim 2 corresponds to a new or cleaned opening sealing member 101.

本発明の実施形態によるプラズマＣＶＤ装置の構成図である。It is a block diagram of the plasma CVD apparatus by embodiment of this invention. 本発明の実施形態であるプラズマＣＶＤ装置の開口密閉部材の取り外しを説明する図である。It is a figure explaining the removal of the opening sealing member of the plasma CVD apparatus which is embodiment of this invention. （ａ）は、本発明の実施形態で成膜システムに使用する交換装置の側面図であり、（ｂ）は、交換装置の平面図である。(A) is a side view of the exchange apparatus used for the film-forming system by embodiment of this invention, (b) is a top view of an exchange apparatus. 本発明の実施形態である成膜システムを量産工程に応用したときのレイアウト図である。It is a layout figure when the film-forming system which is embodiment of this invention is applied to a mass production process.

符号の説明Explanation of symbols

１ プラズマＣＶＤ装置
１０１ 開口密閉部材
１０２ 真空容器
１０３ 電極
１０６ 吊り具
２０１ アーム
２０２ 係合部
３０１ 交換装置
３０２ レール
３０４ 電極ストッカ DESCRIPTION OF SYMBOLS 1 Plasma CVD apparatus 101 Opening sealing member 102 Vacuum container 103 Electrode 106 Lifting tool 201 Arm 202 Engagement part 301 Exchanger 302 Rail 304 Electrode stocker

Claims (3)

基板と電極との間の放電作用を利用して前記基板に成膜する装置であって、上部に開口部を有し、前記基板が納められる容器、および、前記開口部に脱着可能に設けられ、前記基板と対向するように前記開口部を密閉するとともに、前記容器内の基板と対向する電極装着部に前記電極を装着した第１開口密閉部材を備える成膜装置と、
前記第1開口密閉部材の電極装着部周辺が清掃された交換用の第２開口密閉部材を収容するストッカと、
前記容器内の前記基板に対して鉛直方向に離れる方向に移動して前記第１開口密閉部材を前記容器から取り外すとともに、前記ストッカから前記第２開口密閉部材を取り出して前記容器の上方まで搬送するとともに、前記容器内の前記基板に対して鉛直方向に接近する方向に移動して前記第２開口密閉部材を前記容器に設置する交換装置とを備えることを特徴とする成膜システム。 An apparatus for forming a film on the substrate by utilizing a discharge action between the substrate and an electrode , having an opening at the top, a container in which the substrate is accommodated , and a detachably provided in the opening A film forming apparatus including a first opening sealing member that seals the opening so as to face the substrate, and mounts the electrode on an electrode mounting portion facing the substrate in the container;
A stocker for accommodating a replacement second opening sealing member in which the periphery of the electrode mounting portion of the first opening sealing member is cleaned;
The first opening sealing member is removed from the container by moving in a direction away from the substrate in the container in the vertical direction, and the second opening sealing member is taken out from the stocker and conveyed to above the container. And a replacement device that moves in a direction approaching the vertical direction with respect to the substrate in the container and installs the second opening sealing member in the container. 請求項１の成膜システムにおいて、
前記交換装置は、前記第１および第２開口密閉部材を保持するアームと、前記アームが保持する前記第１開口密閉部材を前記容器から取り外してストッカに搬送し、前記第１開口密閉部材が取り外された前記開口部に前記アームで保持した前記第２開口密閉部材を搬送する搬送機構とを備え、
前記第１および第２開口密閉部材には、前記アームと係合するための係合部が設けられ、
前記アームには、前記係合部に係合して前記第1および第２開口密閉部材を保持する保持機構が設けられていることを特徴とする成膜システム。 In the film-forming system of Claim 1 ,
The exchange device removes the arm holding the first and second opening sealing members and the first opening sealing member held by the arms from the container and transports them to the stocker, and the first opening sealing member is removed. A transport mechanism for transporting the second opening sealing member held by the arm to the opened opening,
The first and second opening sealing members are provided with engaging portions for engaging with the arms,
The film forming system , wherein the arm is provided with a holding mechanism that engages with the engaging portion to hold the first and second opening sealing members . 請求項２の成膜システムにおいて、  In the film-forming system of Claim 2,
前記成膜装置を複数備えるとともに、  A plurality of the film forming apparatuses are provided,
前記複数の成膜装置に対して前記交換装置を１台設けることを特徴とする成膜システム。  One film forming system is provided for the plurality of film forming apparatuses.
JP2004160758A 2004-05-31 2004-05-31 Deposition system Expired - Fee Related JP4403882B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004160758A JP4403882B2 (en) 2004-05-31 2004-05-31 Deposition system
TW094106005A TWI262961B (en) 2004-05-31 2005-03-01 Film formation apparatus and film formation system using the same
KR1020050036490A KR100680239B1 (en) 2004-05-31 2005-04-30 Apparatus of forming a film and system of forming a film using the same
CNA200510072223XA CN1757790A (en) 2004-05-31 2005-05-20 Film deposition apparatus, and film deposition system using the film deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004160758A JP4403882B2 (en) 2004-05-31 2004-05-31 Deposition system

Publications (2)

Publication Number Publication Date
JP2005336590A JP2005336590A (en) 2005-12-08
JP4403882B2 true JP4403882B2 (en) 2010-01-27

Family

ID=35490476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004160758A Expired - Fee Related JP4403882B2 (en) 2004-05-31 2004-05-31 Deposition system

Country Status (4)

Country Link
JP (1) JP4403882B2 (en)
KR (1) KR100680239B1 (en)
CN (1) CN1757790A (en)
TW (1) TWI262961B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100212592A1 (en) * 2007-06-19 2010-08-26 Tokyo Electron Limited Vacuum processing apparatus
US20110120370A1 (en) * 2008-06-06 2011-05-26 Ulvac, Inc. Thin-film solar cell manufacturing apparatus
JP5154491B2 (en) * 2009-03-30 2013-02-27 住友重機械工業株式会社 Chamber line
TWI384091B (en) * 2010-05-10 2013-02-01 Asiatree Technology Co Ltd Detachable feeding/discharging structure and conductive film-forming device including the same
JP5560909B2 (en) * 2010-05-31 2014-07-30 東京エレクトロン株式会社 Lid holding jig
TWI415208B (en) * 2010-09-21 2013-11-11 Sumitomo Heavy Industries Chamber line
CN102433539B (en) * 2010-09-29 2014-07-09 住友重机械工业株式会社 Cavity series
JP6960830B2 (en) * 2017-11-17 2021-11-05 株式会社日立ハイテク Vacuum processing equipment and operation method of vacuum processing equipment

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3651977B2 (en) * 1995-08-28 2005-05-25 キヤノン株式会社 Roll-to-roll film forming apparatus and film forming method thereof
JP4010068B2 (en) * 1998-11-12 2007-11-21 日新電機株式会社 Vacuum processing apparatus and multi-chamber type vacuum processing apparatus
CN1187795C (en) * 1999-04-20 2005-02-02 东京电子株式会社 Method for single chamber processing of PECVD-Ti and CVD-Ti films in IC mfg.

Also Published As

Publication number Publication date
KR100680239B1 (en) 2007-02-07
CN1757790A (en) 2006-04-12
TWI262961B (en) 2006-10-01
JP2005336590A (en) 2005-12-08
KR20060047678A (en) 2006-05-18
TW200538576A (en) 2005-12-01

Similar Documents

Publication Publication Date Title
TW202329241A (en) Maintenance apparatus
KR101132237B1 (en) Substrate processing apparatus
TWI402373B (en) A CVD reactor that can replace the reaction chamber roof
JP5188326B2 (en) Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus
US20100255196A1 (en) Treatment system for flat substrates
US20130291798A1 (en) Thin film deposition apparatus and substrate treatment system including the same
WO2010103732A1 (en) Atomic layer deposition apparatus
KR100680239B1 (en) Apparatus of forming a film and system of forming a film using the same
JP2008297584A (en) Film-forming apparatus
US20050205209A1 (en) Replacing chamber components in a vacuum environment
JP2019062091A (en) Substrate processing apparatus, substrate processing method, and computer storage medium
JP5575286B2 (en) Shower head for MOCVD reactor, MOCVD reactor, MOCVD apparatus and cleaning method
JP2018514945A (en) Substrate processing apparatus and chamber cleaning method
EP3414357B1 (en) An apparatus for atomic layer deposition
KR20110072354A (en) Substrate processing system and cleaning module for the same
JP7188256B2 (en) Vapor deposition method and vapor deposition apparatus
KR101011152B1 (en) Apparatus having a substrate holder for film forming
KR101121432B1 (en) Coating apparatus for susceptor and coating method for susceptor
JP5720624B2 (en) Deposition equipment
CN108666231B (en) Substrate processing system, substrate transfer apparatus and transfer method
JP2004304116A (en) Substrate processing apparatus
KR101942511B1 (en) Apparatus for processing substrate and method for processing substrate using the same
JP2006222242A (en) Equipment and method for producing semiconductor
JPH05160031A (en) Cvd device
JP2002517081A (en) Method and apparatus for increasing wafer throughput during cleaning of a semiconductor processing reactor

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060712

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090210

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090413

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091013

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091026

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121113

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 4403882

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121113

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121113

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131113

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees