TWI402373B - A CVD reactor that can replace the reaction chamber roof - Google Patents
A CVD reactor that can replace the reaction chamber roof Download PDFInfo
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- TWI402373B TWI402373B TW95143357A TW95143357A TWI402373B TW I402373 B TWI402373 B TW I402373B TW 95143357 A TW95143357 A TW 95143357A TW 95143357 A TW95143357 A TW 95143357A TW I402373 B TWI402373 B TW I402373B
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- top plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45576—Coaxial inlets for each gas
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
本發明係有關一種在至少一基板上沈積至少一層薄膜之裝置，其包括一在反應器殼體內之反應室，該反應室具一由基板座載板構成之底部、一與該底部相對之頂部及一將包含薄膜成分之反應氣體輸入反應室之進氣機構，反應室頂部設有一頂板，其位在一頂板載板之下方且延伸在基板座載板的整個水平面上方。The present invention relates to an apparatus for depositing at least one film on at least one substrate, comprising a reaction chamber in a reactor housing, the reaction chamber having a bottom portion formed by a substrate carrier plate and a top portion opposite to the bottom portion And an air inlet mechanism for inputting the reaction gas containing the film component into the reaction chamber, and a top plate is disposed at the top of the reaction chamber, which is located below the top plate carrier and extends over the entire horizontal plane of the substrate carrier plate.
DE 102 11 442 A1曾提出此種裝置。該裝置係用於在基板表面沈積薄膜。基板放置在反應室之一基板座載板上，其下方被加熱。反應室的頂部由一進氣機構之下壁構成，該進氣機構具複數個通到反應室之氣體流出口。進氣機構下方設有一擴散板，其構成反應室的真正頂部。Such a device has been proposed in DE 102 11 442 A1. The device is used to deposit a film on the surface of a substrate. The substrate is placed on a substrate carrier of one of the reaction chambers, and is heated below. The top of the reaction chamber is formed by a lower wall of an air intake mechanism having a plurality of gas outflow ports leading to the reaction chamber. Below the air intake mechanism is a diffuser plate that forms the true top of the reaction chamber.
DE 103 20 597 A1亦提出一種CVD反應器。該處之基板亦放置在構成反應室底部之基板座載板上，其下方被加熱。不同於上述之CVD反應器，此處一反應氣體被由基板座載板中心孔，亦即從下方，輸入反應室中。A CVD reactor is also proposed in DE 103 20 597 A1. The substrate at this location is also placed on the substrate carrier plate that forms the bottom of the reaction chamber, and is heated below. Unlike the CVD reactor described above, a reactive gas is introduced into the reaction chamber from the center hole of the substrate carrier, that is, from below.
DE 4037580提出一種濺鍍裝置，該處設有一靶材更換裝置。靶材被推入一更換室中。此外，尚設有使靶材垂直於該方向移動之裝置。DE 4037580 proposes a sputtering device in which a target exchange device is provided. The target is pushed into a replacement chamber. In addition, there is a means for moving the target perpendicular to this direction.
EP 0869199提出一種可以一板形閥門封閉之反應室，板形閥門關閉時，反應室頂部可開啟，以移出該處之靶材。EP 0 869 199 proposes a reaction chamber which can be closed by a plate-shaped valve. When the plate-shaped valve is closed, the top of the reaction chamber can be opened to remove the target there.
US 5769952提出一種群組工具，其包括複數個反應室。其中一反應室具一開口，一基板可經該開口被送入反應室中。基板之邊緣被托住。No. 5,769,952 proposes a group tool comprising a plurality of reaction chambers. One of the reaction chambers has an opening through which a substrate can be fed into the reaction chamber. The edge of the substrate is held.
JP 05195218 A提出一種濺鍍裝置，其頂部設一保護板。JP 05195218 A proposes a sputtering device with a protective plate on the top.
JP 07228970 A同樣提出一種濺鍍裝置，其可更換靶材。JP 07228970 A also proposes a sputtering device which can exchange a target.
JP 05230625 A提出一種在一真空室中沈積薄膜之裝置。該薄膜材料係以雷射光取自一靶材。該靶材可經一真空閘門而自真空室取出。JP 05230625 A proposes a device for depositing a film in a vacuum chamber. The film material is taken from a target with laser light. The target can be removed from the vacuum chamber via a vacuum gate.
DE 102004035335 A1提出一種純淨空間塗佈裝置，其在一真空室中使基板上沈積出玻璃、玻璃陶瓷及/或陶瓷薄膜。DE 102004035335 A1 proposes a clean space coating device which deposits a glass, glass ceramic and/or ceramic film on a substrate in a vacuum chamber.
DE 102004045046 A1提出一種在一基板上塗佈一層導電透明薄膜之方法及裝置。DE 102004045046 A1 proposes a method and a device for coating a layer of electrically conductive transparent film on a substrate.
US 6321680 B2提出一種CVD裝置，其以電漿輔助薄膜之沈積。基板被保存於一存放匣中，該存放匣可藉由一操作裝置移入一存放室中。No. 6,321,680 B2 proposes a CVD apparatus which is a plasma-assisted deposition of a film. The substrate is stored in a storage tray that can be moved into a storage compartment by an operating device.
本發明之目的為在工作技術上進一步改良上述裝置。It is an object of the invention to further improve the above described apparatus in the art of operation.
本目的由申請專利範圍所述之本發明達成，各申請專利範圍可獨立存在。This object is achieved by the present invention as set forth in the scope of the patent application, and the scope of each patent application can exist independently.
依據本發明，設在反應室中心之進氣機構由基板座載板之一開口輸入氣體。所有反應氣體皆由下方輸入反應室中。較有利的是，使進氣機構穿過基板座載板的開口。尤其是將兩種不同的反應氣體輸入反應室中，其中第一反應氣體是一金屬有機化合物，第二反應氣體是一金屬氫化物，故視所選擇的反應氣體可沈積出第三及第五族或第二及第六族元素。本發明之特徵為頂板可分離地固定於一頂板載板上。頂板可被適當的扣鉤或快速鎖緊裝置固定在頂板載板上。反應器殼體具一側邊開口，頂板可由該開口而被更換。頂板載板可被冷卻。頂板載板由金屬製成，頂板本身則由石墨或石英或藍寶石製成。由於頂板延伸在頂板載板的整個下側，且頂板與進氣機構頂側有一空隙，故頂板的更換容易。為使更換頂板的開口為最小，或將此開口亦使用作為放入及取出基板之開口，本發明使頂板載板可垂直移動。頂板載板可由一反應位置下降至一頂板更換位置。在頂板更換位置時，頂板載板約位在側邊開口的中央，亦即開口上緣的下方，故一機器手臂可伸入反應室中，以握持頂板並將其取出反應室，而更換一新的頂板。將頂板固定於頂板載板的快速鎖緊裝置需被鬆脫。反應位置亦可是基板的裝卸位置，機器手臂可如習知伸到基板座載板上，取出該處之基板而更換一欲塗佈之基板。基板座載板較佳為圓環形。進氣機構周圍環繞數個基板。基板座載板由下方被驅動旋轉，故進氣機構構成一可被旋轉的中空軸。中空軸中可設複數個氣體輸入通道，以將反應氣體輸送至氣體流出口，再由該氣體流出口以水平方向流出。氣體流出口較佳為設在圓周方向上，並互為上下關係，亦即使氣體流出口位在一圓柱形周壁上。基板座載板經由下方加熱，反應器殼體內設一高頻加熱線圈。在一較佳設計中，不僅頂板載板可與頂板一起垂直移動，基板座載板包括進氣機構亦可垂直移動。側邊開口可被一門密封。頂板載板被懸吊在反應室殼體頂部，並可使頂板載板下降。其懸吊支撐裝置可通過一冷媒。According to the present invention, the air intake mechanism provided at the center of the reaction chamber is supplied with gas from one of the openings of the substrate carrier. All reaction gases are fed into the reaction chamber from below. Advantageously, the air intake mechanism is passed through the opening of the substrate carrier. In particular, two different reaction gases are introduced into the reaction chamber, wherein the first reaction gas is a metal organic compound, and the second reaction gas is a metal hydride, so that the selected reaction gas can be deposited third and fifth. Family or second and sixth family elements. The invention is characterized in that the top plate is detachably fixed to a top board. The top plate can be secured to the top carrier by suitable hooks or quick locks. The reactor housing has a side opening and the top plate can be replaced by the opening. The top carrier can be cooled. The top carrier is made of metal and the top itself is made of graphite or quartz or sapphire. Since the top plate extends over the entire lower side of the top plate carrier and the top plate has a gap with the top side of the air intake mechanism, the replacement of the top plate is easy. In order to minimize the opening of the replacement top plate, or to use the opening as an opening for inserting and removing the substrate, the present invention allows the top carrier to be vertically movable. The top carrier can be lowered from a reactive position to a top replacement position. In the top plate replacement position, the top plate carrier is located at the center of the side opening, that is, below the upper edge of the opening, so that a robotic arm can extend into the reaction chamber to hold the top plate and take it out of the reaction chamber. Replace the new top plate. The quick-locking device that fixes the top plate to the top plate carrier needs to be loosened. The reaction position may also be a loading and unloading position of the substrate, and the robot arm may be extended to the substrate carrier plate as is conventionally, and the substrate to be coated is taken out to replace the substrate to be coated. The substrate carrier plate is preferably annular. The air intake mechanism surrounds several substrates. The substrate carrier plate is driven to rotate from below, so that the air intake mechanism constitutes a hollow shaft that can be rotated. A plurality of gas input passages may be disposed in the hollow shaft to transport the reaction gas to the gas outlet, and then flow out in the horizontal direction from the gas outlet. The gas outflow ports are preferably arranged in the circumferential direction and in a top-bottom relationship with each other, even if the gas outflow port is located on a cylindrical peripheral wall. The substrate carrier plate is heated via the lower side, and a high frequency heating coil is disposed in the reactor housing. In a preferred design, not only the top carrier can be moved vertically with the top plate, but the substrate carrier also includes an air intake mechanism for vertical movement. The side opening can be sealed by a door. The top carrier is suspended from the top of the reaction chamber housing and allows the top carrier to be lowered. Its suspension support device can pass through a refrigerant.
本發明尚有關一種在上述反應室之至少一基板上沈積至少一層薄膜之方法。在每個製程步驟後皆取出亦被沈積之頂板。機器手臂取出頂板並將其放入一存放匣中。然後從反應器殼體外之蝕刻室中取出一清潔過的頂板並放入反應室中而固定在頂板載板下方。蝕刻室是一氣密反應室，其進行一乾式蝕刻，例如使用氣態的HCl，而在適當的反應溫度下蝕刻掉沈積在頂板上的金屬層。清潔過後的頂板被保留在清潔狀態，直到再被使用。蝕刻步驟的時間較反應器中所進行製程步驟的時間短時，清潔過的頂板可被存放在該處一保護氣體之下。但亦可先將欲清潔之頂板送入蝕刻室中，然後將清潔過的頂板存放在存放匣中。The invention further relates to a method of depositing at least one film on at least one substrate of the reaction chamber. The top plate that was also deposited was taken after each process step. The robot removes the top plate and places it in a storage bowl. A cleaned top plate is then removed from the etch chamber outside the reactor housing and placed in the reaction chamber to be secured beneath the top plate carrier. The etch chamber is an airtight reaction chamber that performs a dry etch, such as using gaseous HCl, while etching away the metal layer deposited on the top plate at the appropriate reaction temperature. The cleaned top plate is left in a clean state until it is used again. The time of the etching step is shorter than the time of the process step performed in the reactor, and the cleaned top plate can be stored under a shielding gas there. However, the top plate to be cleaned may be first fed into the etching chamber, and then the cleaned top plate may be stored in the storage bowl.
將頂板固定於頂板載板的固定件較佳為設在頂板邊緣。固定件可在多處，尤其是在三個相同角度位置，以末端的扣鉤頂持圓形頂板。固定件可為桿狀，其由上方穿過反應室頂部並可垂直移動。該固定桿可旋轉，而使扣鉤扣住及離開頂板。The fixing member for fixing the top plate to the top plate carrier is preferably provided at the edge of the top plate. The fixing member can be held in multiple places, especially at three identical angular positions, with the end of the hook holding the circular top plate. The fixture may be rod-shaped that passes over the top of the reaction chamber from above and is vertically movable. The fixing rod is rotatable, and the hook is fastened and released from the top plate.
以下將依據附圖，詳細說明本發明一實施例。An embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
反應器殼體1由一氣密金屬殼體構成。欲進行維修時，可取下反應器殼體1蓋板。反應器殼體1蓋板上固定一頂板載板5。兩同時是一冷媒之輸入及輸出管的支撐件18、19使頂板載板5冷卻。頂板載板5具一冷卻室16。The reactor housing 1 is constructed of a gas tight metal housing. The cover of the reactor housing 1 can be removed for maintenance. A top plate carrier 5 is fixed to the cover of the reactor housing 1. The support members 18, 19, which are both the input and output tubes of a refrigerant, cool the top carrier 5 at the same time. The top carrier 5 has a cooling chamber 16.
支撐件18、19使得頂板載板5與反應器殼體1蓋板之距離可被改變。冷媒輸入及輸出管18、19可例如為伸縮式。The supports 18, 19 allow the distance between the top carrier 5 and the cover of the reactor housing 1 to be varied. The refrigerant input and output tubes 18, 19 can be, for example, telescopic.
頂板載板5下側為一圓盤形與一頂板6接觸之平坦接觸面。頂板載板5由金屬，例如鋁或高級鋼製成。頂板6之輪廓基板上與頂板載板5下側相同。The lower side of the top carrier 5 is a flat contact surface in which a disk is in contact with a top plate 6. The top carrier 5 is made of metal such as aluminum or high grade steel. The contour substrate of the top plate 6 is identical to the lower side of the top plate carrier 5.
頂板6亦為圓盤形，本實施例中之頂板覆蓋頂板載板5整個下側，亦即頂板6沒有開孔。亦沒有任何反應器構件穿過頂板6。但頂板6可以可鬆脫之固定件固定於頂板載板5。該固定件可為扣鉤。亦可將頂板6設作旋塞式蓋體而與頂板載板5連接。The top plate 6 is also in the shape of a disk. The top plate in this embodiment covers the entire lower side of the top plate carrier 5, that is, the top plate 6 has no openings. Nor does any reactor member pass through the top plate 6. However, the top plate 6 can be fixed to the top carrier 5 by a detachable fixing member. The fixing member can be a hook. The top plate 6 may also be provided as a plug type cover to be connected to the top plate carrier 5.
頂板6下方為反應室3，故頂板6構成其頂部。反應室3亦為旋轉對稱。反應室3中心設有一進氣機構7，其將反應氣體輸入反應室3中。圓柱形之進氣機構7由下方穿過基板座載板4之一中心孔8。頂板6基本上係由熱及電絕緣材料，例如石英或石墨製成。基板座載板4則較佳由石墨製成。圓盤形基板座載板4具複數個排列在圓周方向上的凹槽，其開口朝上並各容置一圓盤形基板座15，該基板座15可被凹槽中的氣體旋轉軸承旋轉。每一基板座15上放置一欲塗佈之基板2。Below the top plate 6 is the reaction chamber 3, so the top plate 6 constitutes its top. The reaction chamber 3 is also rotationally symmetrical. An intake mechanism 7 is provided in the center of the reaction chamber 3, and the reaction gas is introduced into the reaction chamber 3. The cylindrical intake mechanism 7 passes through a central opening 8 of the substrate carrier plate 4 from below. The top plate 6 is basically made of a thermal and electrically insulating material such as quartz or graphite. The substrate carrier plate 4 is preferably made of graphite. The disc-shaped substrate carrier plate 4 has a plurality of grooves arranged in the circumferential direction, the openings of which face upward and each accommodate a disc-shaped substrate holder 15, which can be rotated by a gas rotating bearing in the groove . A substrate 2 to be coated is placed on each of the substrate holders 15.
基板座4下方有一加熱燈絲11，其可是一電阻加熱裝置。但較佳為使用一高頻線圈，其可在導電的基板座載板4感應產生渦流，而使得基板座載板4增溫。Below the substrate holder 4 is a heating filament 11, which may be a resistive heating device. Preferably, however, a high frequency coil is used which induces eddy currents on the conductive substrate carrier 4 to warm the substrate carrier 4 .
進氣機構7由一中空軸12構成，該中空軸12穿過反應器殼體1之底部。中空軸12較佳為被驅動旋轉，其支撐基板座載板4，故中空軸12可帶動基板座載板4旋轉。中空軸可供應上述氣體旋轉軸承之氣體。中空軸12亦可輸入反應氣體，其可為第三或第二族元素之一氫化物及第五或第六族元素之一金屬有機化合物。氫化物與金屬有機化合物各與一載氣一起被輸入反應室中。其通道13、14彼此分開。氫化物，如AsH3 、PH3 或NH3 ，由中央的氣體通道13流至進氣機構7頂側7’下方。在該處反應氣體垂直氣流被偏轉為水平氣流。反應氣體徑向流出流出口14’，該流出口位在圓柱形周壁上朝向反應室3。氣體通道14之流出口14’下方的圓柱形周壁上為一金屬有機化合物流出口13’。該流出口13’構成氣體通道13之末端，金屬有機化合物與其載氣由該流出口13’水平流出，故金屬有機化合物同樣被由反應器殼體1下側輸入。下流出口13’位在基板座載板4朝向反應室3之表面的正上方，流出口14’則位在反應室3的軸中央。The air intake mechanism 7 is constituted by a hollow shaft 12 which passes through the bottom of the reactor housing 1. The hollow shaft 12 is preferably driven to rotate, and supports the substrate carrier plate 4, so that the hollow shaft 12 can drive the substrate carrier plate 4 to rotate. The hollow shaft can supply the gas of the above gas rotary bearing. The hollow shaft 12 may also be fed with a reactive gas which may be a metal hydride of one of the third or second group elements and one of the fifth or sixth group elements. The hydride and the organometallic compound are each fed into the reaction chamber together with a carrier gas. Its channels 13, 14 are separated from each other. A hydride such as AsH 3 , PH 3 or NH 3 flows from the central gas passage 13 to the top side 7' of the inlet mechanism 7. At this point the vertical flow of reactive gas is deflected into a horizontal flow. The reaction gas flows radially out of the outflow opening 14', which is located on the cylindrical peripheral wall towards the reaction chamber 3. On the cylindrical peripheral wall below the outlet 14' of the gas passage 14, there is a metal organic compound outlet 13'. The outflow port 13' constitutes the end of the gas passage 13, and the metal organic compound and its carrier gas flow horizontally from the outflow port 13', so that the organometallic compound is also input from the lower side of the reactor casing 1. The lower outlet 13' is located directly above the surface of the substrate carrier 4 facing the reaction chamber 3, and the outlet 14' is located at the center of the axis of the reaction chamber 3.
本實施例中，不僅頂板載板5可與固定於其下側之頂板6一起朝圖1箭頭A所示方向下降，基板座載板4及進氣機構7所構成基板支撐裝置以及其下方之加熱燈絲11亦可朝箭頭B所示方向下降。In this embodiment, not only the top carrier 5 can be lowered together with the top plate 6 fixed to the lower side thereof in the direction indicated by the arrow A in FIG. 1, and the substrate supporting plate 4 and the air inlet mechanism 7 constitute the substrate supporting device and the lower portion thereof. The heating filament 11 can also descend in the direction indicated by the arrow B.
如此使得整個反應室3可如電梯般移動。This allows the entire reaction chamber 3 to move like an elevator.
圖1顯示反應器之裝卸位置。反應室尤其是基板座載板4在該垂直位置時，基板座載板4朝向反應室3的表面位在反應器殼體1側面開口9處。基板座載板4朝向反應室3的表面在開口9下緣的上方及開口9上緣的下方。密封開口9的密封門17開啟時，一機器手臂可伸入反應室3中，而取出已塗佈之基板2並放入一欲塗佈之基板2。基板座載板4則持續配合旋轉一適當角度。Figure 1 shows the loading and unloading position of the reactor. In the reaction chamber, particularly when the substrate carrier 4 is in the vertical position, the surface of the substrate carrier 4 facing the reaction chamber 3 is located at the side opening 9 of the reactor housing 1. The surface of the substrate carrier 4 facing the reaction chamber 3 is above the lower edge of the opening 9 and below the upper edge of the opening 9. When the sealing door 17 of the sealing opening 9 is opened, a robot arm can be inserted into the reaction chamber 3, and the coated substrate 2 is taken out and placed in a substrate 2 to be coated. The substrate carrier 4 is continuously rotated to an appropriate angle.
整個反應室由圖1所示位置向下移動時，另一機器手臂可由開口9伸入反應室3中，以握持頂板6。在該位置時，基板座載板4朝向上方的表面可在開口9下緣下方。頂板6則位在開口上緣與下緣之間。故機器手臂只需垂直移動。機器手臂鬆脫而將頂板6固定於頂板載板5之固定件，並以圖2側面開口9處之雙箭頭方向取出頂板6，並將一新的頂板6固定在頂板載板5下側。When the entire reaction chamber is moved downward from the position shown in Fig. 1, another robotic arm can be inserted into the reaction chamber 3 from the opening 9 to hold the top plate 6. In this position, the upwardly facing surface of the substrate carrier plate 4 can be below the lower edge of the opening 9. The top plate 6 is located between the upper and lower edges of the opening. Therefore, the robot arm only needs to move vertically. The machine arm is loosened to fix the top plate 6 to the fixing member of the top plate carrier 5, and the top plate 6 is taken out in the direction of the double arrow at the side opening 9 of FIG. 2, and a new top plate 6 is fixed under the top plate carrier 5. side.
頂板的更換係在各塗佈製程之間進行，以清潔頂板。由於頂板在製程中之溫度低於基板座載板4，故無法避免頂板6亦被塗佈。頂板之塗佈通常為不利，因沈積在頂板6表面的材料顆粒會掉落到基板上。定期更換頂板6可使沈積於其上之材料維持在一可容忍之範圍內。The replacement of the top plate is performed between the coating processes to clean the top plate. Since the temperature of the top plate in the process is lower than that of the substrate carrier 4, it is unavoidable that the top plate 6 is also coated. Coating of the top plate is generally disadvantageous because material particles deposited on the surface of the top plate 6 may fall onto the substrate. Regular replacement of the top plate 6 maintains the material deposited thereon within a tolerable range.
頂板載板5可被適當的，尤其是設在反應室3外部的連接件而與基板座載板4連接。故頂板載板5與基板座載板4可不分開地在垂直方向上移動，其垂直驅動可利用穿過反應器殼體1底部開口的中空軸12。旋轉驅動亦可利用中空軸12，而使進行沈積製程時基板座載板4可繞其中心軸旋轉。亦可以將旋轉驅動及/或垂直驅動裝置設在反應器殼體1內部。The top carrier 5 can be connected to the substrate carrier 4 by suitable connectors, particularly those provided outside the reaction chamber 3. Therefore, the top carrier 5 and the substrate carrier 4 can be moved in a vertical direction without being separated, and the vertical driving can utilize the hollow shaft 12 passing through the bottom opening of the reactor housing 1. The rotary drive can also utilize the hollow shaft 12 such that the substrate carrier plate 4 can be rotated about its central axis during the deposition process. It is also possible to provide a rotary drive and/or a vertical drive unit inside the reactor housing 1.
圖1所示實施例中之元件符號20為擺動鉤，其可由外部操作。該擺動鉤末端的扣鉤將頂板6壓緊在頂板載板5上。The component symbol 20 in the embodiment shown in Fig. 1 is a swing hook which can be operated externally. The hook at the end of the swinging hook presses the top plate 6 against the top carrier 5 .
圖3顯示包括反應器殼體1、一蝕刻室22及一存放匣21之整個設備的示意圖。該三空間1、21、22之間設有一多關節機器手臂23。該機器手臂之抓取器可伸入圖1所示之反應室3頂板6下方的空隙10中，接著垂直向上移動，至接觸到頂板6為止。然後旋轉擺動鉤20，使得頂板6被釋放，並使抓取器垂直下降，而使頂板6脫離頂板載板5。再將抓取器與頂板6一起移出反應室3，並將頂板放入存放匣21中。機器手臂23將一清潔過的頂板6取離蝕刻室22並放入反應室3中，該頂板6再被擺動鉤20固定在頂板載板5上。3 shows a schematic view of the entire apparatus including a reactor housing 1, an etch chamber 22, and a storage cassette 21. A multi-joint robotic arm 23 is disposed between the three spaces 1, 21, 22. The gripper of the robot arm can extend into the gap 10 below the top plate 6 of the reaction chamber 3 shown in Fig. 1, and then move vertically upward until it contacts the top plate 6. The swing hook 20 is then rotated so that the top plate 6 is released and the gripper is lowered vertically, and the top plate 6 is detached from the top plate carrier 5. The gripper is then removed from the reaction chamber 3 together with the top plate 6, and the top plate is placed in the storage bowl 21. The robot arm 23 takes a cleaned top plate 6 away from the etching chamber 22 and places it in the reaction chamber 3, which is then fixed to the top plate carrier 5 by the swinging hooks 20.
擺動鉤20伸入反應室3的末端為折曲，該折曲可包覆圓盤形頂板6的外緣。可設三或多個擺動鉤，其由反應器殼體之穿孔伸入反應器內部。擺動鉤20不僅可被旋轉，以使其扣鉤旋轉到鉤持位置。必要時，擺動鉤20亦可垂直移動，而降低頂板6。The end of the swinging hook 20 extending into the reaction chamber 3 is bent, and the bending can cover the outer edge of the disc-shaped top plate 6. Three or more swinging hooks may be provided which extend into the interior of the reactor from the perforations of the reactor housing. The swing hook 20 can be rotated not only to rotate its clasp to the hooking position. If necessary, the swing hook 20 can also move vertically to lower the top plate 6.
有利的是，使頂板6只被可鬆脫之固定件托住邊緣。亦為有利的是，頂板只有部份邊緣被托住。Advantageously, the top plate 6 is held against the edge by only the releasable fastener. It is also advantageous that only a portion of the edge of the top plate is held.
蝕刻室22是一氣密反應容器，可被控溫。其可被適當加熱裝置加熱至一反應溫度，而在蝕刻室22中進行一乾式蝕刻。為此需將一蝕刻氣體輸入蝕刻室22中。該氣體可為乾的HCl。蝕刻室22中亦可輸入一惰性氣體，以沖刷蝕刻室22。蝕刻後的清潔頂板6需留在蝕刻室22中的保護氣體中，直至機器手臂23將其取出，而在上述之密封門17開啟後，送入反應器殼體中。The etching chamber 22 is an airtight reaction vessel that can be temperature controlled. It can be heated to a reaction temperature by a suitable heating device and a dry etch is performed in the etch chamber 22. An etching gas is required to be introduced into the etching chamber 22 for this purpose. This gas can be dry HCl. An inert gas may also be introduced into the etching chamber 22 to flush the etching chamber 22. The etched clean top plate 6 is left in the shielding gas in the etching chamber 22 until the robot arm 23 takes it out, and after the above-described sealing door 17 is opened, it is fed into the reactor casing.
所有揭示特徵本身皆具有發明性質。本發明揭示之特徵完全包含於本案之申請專利範圍中。All revealing features are inherently inventive in nature. The features disclosed in the present invention are fully included in the scope of the patent application of the present application.
1．．．反應器殼體1. . . Reactor housing
2．．．基板2. . . Substrate
3．．．反應室3. . . Reaction chamber
4．．．基板座載板4. . . Substrate carrier board
5．．．頂板載板5. . . Roof carrier
6．．．頂板6. . . roof
7．．．進氣機構7. . . Intake mechanism
7’．．．頂側7’. . . Top side
8．．．中心孔8. . . Center hole
9．．．側邊開口9. . . Side opening
10．．．空隙10. . . Void
11．．．加熱燈絲11. . . Heating filament
12．．．中空軸12. . . Hollow shaft
13．．．氣體通道13. . . Gas passage
13’．．．流出口13’. . . Outflow
14．．．氣體通道14. . . Gas passage
14’．．．流出口14’. . . Outflow
15．．．基板座15. . . Substrate holder
16．．．冷卻室16. . . Cooling room
17．．．密封門17. . . Sealed door
18．．．支撐件18. . . supporting item
19．．．支撐件19. . . supporting item
20．．．擺動鉤20. . . Swing hook
21．．．存放匣twenty one. . . Storage 匣
22．．．蝕刻室twenty two. . . Etching chamber
23．．．機器手臂twenty three. . . Robotic arm
圖1係本發明反應器之截面圖，其位在反應位置，該位置亦為基板裝卸位置。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view of a reactor of the present invention positioned at a reaction site, which is also a substrate loading and unloading position.
圖2係本發明反應器如圖1之圖，其位在頂板更換位置。Figure 2 is a diagram of the reactor of the present invention as shown in Figure 1, which is in the top plate replacement position.
圖3係反應器殼體1、蝕刻室22及存放匣21之圖。3 is a view of the reactor housing 1, the etching chamber 22, and the storage cassette 21.
1．．．反應器殼體1. . . Reactor housing
2．．．基板2. . . Substrate
3．．．反應室3. . . Reaction chamber
4．．．基板座載板4. . . Substrate carrier board
5．．．頂板載板5. . . Roof carrier
6．．．頂板6. . . roof
7．．．進氣機構7. . . Intake mechanism
7’．．．頂側7’. . . Top side
8．．．中心孔8. . . Center hole
9．．．側邊開口9. . . Side opening
10．．．空隙10. . . Void
11．．．加熱燈絲11. . . Heating filament
12．．．中空軸12. . . Hollow shaft
13．．．氣體通道13. . . Gas passage
13’．．．流出口13’. . . Outflow
14．．．氣體通道14. . . Gas passage
14’．．．流出口14’. . . Outflow
15．．．基板座15. . . Substrate holder
16．．．冷卻室16. . . Cooling room
17．．．密封門17. . . Sealed door
18．．．支撐件18. . . supporting item
19．．．支撐件19. . . supporting item
20．．．擺動鉤20. . . Swing hook
Claims (13)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200510056324 DE102005056324A1 (en) | 2005-11-25 | 2005-11-25 | CVD reactor with exchangeable process chamber ceiling |
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| TW200728496A TW200728496A (en) | 2007-08-01 |
| TWI402373B true TWI402373B (en) | 2013-07-21 |
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| DE (1) | DE102005056324A1 (en) |
| TW (1) | TWI402373B (en) |
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| DE202011103798U1 (en) * | 2011-07-28 | 2012-10-29 | Michael Harro Liese | Quick release for reactors and converters |
| WO2013022128A1 (en) * | 2011-08-09 | 2013-02-14 | 삼성전자주식회사 | Vapor deposition apparatus |
| CN103422071B (en) * | 2012-05-18 | 2015-06-17 | 中国地质大学（北京） | Vacuum cavity chamber capable of rapidly changing gas-homogenizing mode |
| DE102012110125A1 (en) | 2012-10-24 | 2014-04-24 | Aixtron Se | Device for treating substrates with a replaceable ceiling plate and method for replacing such a ceiling plate |
| KR102376429B1 (en) * | 2013-12-18 | 2022-03-17 | 램 리써치 코포레이션 | Seminconductor substrate processing apparatus including uniformity baffles |
| US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
| DE202018100363U1 (en) * | 2018-01-23 | 2019-04-24 | Aixtron Se | Device for connecting a susceptor to a drive shaft |
| DE102020103947A1 (en) | 2020-02-14 | 2021-08-19 | AIXTRON Ltd. | CVD reactor and method of handling a process chamber ceiling plate |
| DE102023128850A1 (en) | 2023-03-21 | 2024-09-26 | Aixtron Se | Device for simultaneously depositing a layer on several substrates |
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|---|---|---|---|---|
| JPH09104986A (en) * | 1992-06-24 | 1997-04-22 | Anelva Corp | Treatment of substrate and cvd treatment method |
| TW448239B (en) * | 1998-11-04 | 2001-08-01 | Anelva Corp | CVD apparatus and CVD method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200728496A (en) | 2007-08-01 |
| DE102005056324A1 (en) | 2007-06-06 |
| EP1954852A1 (en) | 2008-08-13 |
| WO2007060143A1 (en) | 2007-05-31 |
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