20〇53概 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種生產效率高的成膜裝置及成膜系 統。 【先前技術】 在平行平板型的電漿CVD (化學氣相沈積）裝置中， 與載置基板的基板支撐器對向的設置放電電極。然後，供 給反應氣體’並向放電電極施加高頻電力，使其產、生電漿二 而在基板的表面上進行成膜。如利用電漿CVD裝置在基 f上進行賴，财放電電極及制邊部軸生賴。^ 生成膜對RF電極的放電作用形成妨礙，且使室内環境的 ，淨度下降。作為除去㈣CVD |置的放電電極上所形 2 =物的方法’已知有—種使用吹掃氣體進行清除的 二（專利文獻1)。如利用該方法，可除去RF電極上所 成膜’但卻無法除去在吹掃氣體接觸不到的放電 :=二=生成物。因此，為了對放電電極及 仃 清潔’需要打開室而利用酸和氣流等 小心谨慎地除去生成膜。 八4 [專利文獻U日本專利早期公開之特開2002_2 12730號 么報 ㈣itif成職’放㈣翻來自平板加熱11的放射 二熱而高溫化。因此’為了開始小心謹慎地 :由於作#’必須等待較長的時間直到放電電極冷 部。由於其間不能則魏CVD裝置，所以存在生產效 5 2005¾¾^ 率大大降低這樣的問題。 【發明内容】 本發明提供一種利用基板和電極間的放電作 用而在 述基板上成膜的成膜裝置’包括具有開口部 ^ 板的谷裔、可裝卸地設置在前述開口部上的用於六月】 開口部的開Π密閉構件；其特徵在於前述電極=閉前述 内所收納的前述基板對向安裝，且前述電=迷容器 雄、閉構件成一體的進行交換。 述開口 述基Summary of the 20th invention: [Technical field to which the invention belongs] The present invention relates to a film-forming device and a film-forming system with high production efficiency. [Prior Art] In a parallel plate-type plasma CVD (chemical vapor deposition) apparatus, a discharge electrode is provided to face a substrate support on which a substrate is placed. Then, a reaction gas is supplied, and high-frequency power is applied to the discharge electrode to generate and generate plasma to form a film on the surface of the substrate. If a plasma CVD apparatus is used to perform the process on the substrate f, the discharge electrode and the edge-forming part are generated. ^ The generated film hinders the discharge effect of the RF electrode and reduces the indoor environment's cleanliness. As a method of removing a 2 = substance formed on a discharge electrode set by CVD, there is known a method of removing a purge gas using a purge gas (Patent Document 1). If this method is used, the film formed on the RF electrode can be removed, but the discharge which cannot be contacted by the purge gas cannot be removed: = 2 = product. Therefore, in order to clean the discharge electrode and 仃, it is necessary to open the chamber and carefully remove the formed film by using an acid and a gas stream. 8 [Patent Document U Japanese Patent Laid-Open No. 2002_2 No. 12730 What's New fitif's post 'releases the radiation from the flat panel heating 11 and heats it up. So ‘in order to start cautiously: due to the operation, you have to wait a long time until the cold part of the discharge electrode. Since the CVD device cannot be controlled in the meantime, there is a problem that the production efficiency is greatly reduced. [Summary of the Invention] The present invention provides a film-forming apparatus that uses a discharge action between a substrate and an electrode to form a film on the substrate. June] The opening and closing member of the opening part is characterized in that the aforementioned electrode = closes the aforementioned substrate housed inside the aforementioned and is installed oppositely, and the aforementioned electric = container male and closed member are integrally exchanged. Shukou Shuji
本發明提供一種成膜系統，其特徵在於 ^膜裝置；以及將安裝了前述電極的前述開 土逃的 前述容器上卸下，並將安裝了電極的交換 ^構件從 在前述容器上進行安裝之交換裝置。 松閉構件 則只需要 置的電極 可提南成 如利用本發明，如果電極及其周邊部髒了， 更換開口密閉構件即可，所以能夠縮短對成膜萝 及其周邊部進行清潔時的成膜裝置的停止時間衣 膜製程的生產效率。 曰’ 下下文特舉較佳實施例’並二==° J點=;二 【實施方式】 _參照圖1對本發明的實施形態之電漿CVD裝置進行 。本發明的電漿CVD裝置1，具有構成成膜^的真空 容器102和開口密閉構件1〇1。開口密閉構件ι〇ι以覆蓋 真空容器102的上部所形成的開口 102a之形態，可裝卸地 6 20053職 進行安裝。在開口密閉構 有密封部112。當在真真工谷S 102之間設置 時，為了不使開口 102上安裝開口密閉構件101 有定位銷11卜而且，才」G1的位置產生偏離，而設置 連接。在直空容55 、賴件1G1與高頻電源卿 心上 02的加熱器107上，載詈右用认 作為成膜對象的多數個基板11G之工作用於承載 電極103設置於問n #日日 設師密The present invention provides a film forming system, which is characterized by a film device; and removing the aforementioned container that is installed with the electrode, and removing the electrode-installed exchange member from the container. Switching device. For the closed member, only the electrode that needs to be placed can be used. If the present invention is used, if the electrode and its peripheral part are dirty, the opening sealing member can be replaced. Therefore, the cost of cleaning the film-forming lobe and its peripheral part can be shortened. Membrane device stop time Production efficiency of film-coating process. "A preferred embodiment is enumerated below" and two == ° J point =; two [Embodiment] _ Referring to FIG. 1, a plasma CVD apparatus according to an embodiment of the present invention is performed. The plasma CVD apparatus 1 according to the present invention includes a vacuum container 102 constituting a film formation and an opening sealing member 101. The opening-sealing member ιιm can cover the opening 102a formed in the upper part of the vacuum container 102, and can be detachably installed. The opening is hermetically sealed with a sealing portion 112. When it is installed between the real industrial valley S 102, a connection is provided so that the opening sealing member 101 is not provided with the positioning pin 11 on the opening 102 and the position of G1 is deviated. On the heater 107 of the direct air volume 55, the piece 1G1, and the high-frequency power supply 02 on the heart, the work of the substrate 11G, which is used as the film formation target, is carried on the right side. Daily secret
緣構件丨°作金屬構件進行挾持的三 二二開口賴構件1()1*真空容器搬被電性絕緣。 ，口被閉構件101和真空容器i 〇 2所構成之成膜室的内 4形成減壓或真空的狀態，所以可利用其壓力，使開口密 閉構件101和真空谷為102被固定。而且，雖然利用減壓 或真空的壓力被固定’但也可還利用螺检等進行固定。但 是，為了使開口密閉構件101容易拆卸，需要使該螺栓較 組裝真空容器102時所使用的螺栓容易拆下。在本實施形 您中，由於可將開口密閉構件1〇丨從真空容器1〇2分離， 所以可使開口密閉構件101和電極103成一體的進行交換。 成膜氣體從反應氣體通路105被導入電漿CVD裝置1 的内部。從反應氣體通路105被導入的氣體，為氮氣 氣體、氧氣(〇2)氣體、二氧化氮(N02)氣體、一氧化氮(NO) 氣體、氨氣(NH3)氣體等形成反應性活性材料的原料之氣 體，氬氣(Ar)氣體、氦氣(He)氣體、氖氣(Ne)氣體、氪氣(Kr) 7The edge member 丨 ° is a metal member for holding three, two, two openings, and the vacuum container is electrically insulated. Since the inside of the film-forming chamber 4 formed by the mouth-closed member 101 and the vacuum container 102 is in a decompressed or vacuum state, the pressure of the opening-closed member 101 and the vacuum valley 102 can be fixed. Furthermore, although it is fixed by the pressure of reduced pressure or vacuum ', it may also be fixed by a screw test or the like. However, in order to easily remove the opening-sealing member 101, it is necessary to make the bolt easier to remove than the bolt used when assembling the vacuum container 102. In this embodiment, since the opening-sealing member 10o can be separated from the vacuum container 102, the opening-sealing member 101 and the electrode 103 can be exchanged as a whole. The film-forming gas is introduced into the plasma CVD apparatus 1 from the reaction gas passage 105. The gas introduced from the reaction gas passage 105 is nitrogen gas, oxygen gas (02) gas, nitrogen dioxide (N02) gas, nitric oxide (NO) gas, ammonia gas (NH3) gas, or the like that forms a reactive active material. Raw material gas, argon (Ar) gas, helium (He) gas, neon gas (Ne) gas, krypton gas (Kr) 7
20053獅 6C 氣體.、氣氣(Xe)氣體等稀有氣體，甲矽烷⑻印)氣體、乙石夕 炫(Si2H6)氣體、甲樹Cii4)氣體等形成薄膜的成分之氣體。 從反應氣體通路105所導人的反應氣體，由電極1()3被分 放電極1〇3起到作為向反應氣體施力口電屋之電極的作 用，且還起到使反應氣體分散的作用。電極103由打開有 分散孔的金屬板，或將不銹齡子、雜子等金屬粒子進 行燒結而成形的多孔質材料構成。利用f極103可使反應 氣體被均勻地分散，生成均勻的電漿p。20053 Gases such as rare gas such as 6C gas, gas (Xe) gas, silane gas, Si2H6 gas, Cii4) gas, etc. The reaction gas introduced from the reaction gas path 105 is discharged by the electrode 1 () 3, and the electrode 10 is used as an electrode of the electric house for applying a force to the reaction gas, and it also disperses the reaction gas. effect. The electrode 103 is formed of a metal plate having dispersed holes or a porous material formed by sintering metal particles such as stainless steel and heterodyne. By using the f-pole 103, the reaction gas can be uniformly dispersed to generate a uniform plasma p.
利用電極103被分散的反應氣體，藉由高頻電源1〇9 所施加的高頻電力被電離，生成電漿p。利用該電聚p， 在基板110上生成薄膜。 - 明的開口密閉構件101從真空容 ^ 進饤7刀離所形成的拆卸，參照圖2進行說明。 的-Π!構件101利用與電聚cvd裝置1分別設置 行拆卸，並被移動。關於交換裝置的詳細情 =在後面細說明。2G1為在交換裝置上所設置的臂， 且m〇r方向被驅動。在臂2〇1上設置有氣缸2〇3, 且^缸203的杆部頂端絲有扣合部 203，可使扣合部202沿圖的左 5動孔缸 MAi. im 的左右方向進行移動。開口密閉 構件101如下面所說明的那樣被拆卸。 將臂2 01移動至與開口密閉構 1〇6相同的高度。然後，利用氣上，置的吊具 移動，並與吊具1〇6扣合。块後 ^扣&部202違行 時，如圖2所示，使開口密閉201向上方移動 才j偁件101和電極103成一體 8 20053^¾ 的從真空容器102上被拆除。 這樣，本發明的實施形態之電漿CVD裝置丨 ^ 極103與開口密閉構件101成—體的被拆除，所以 裝了新品或清潔完畢的電極⑽之另外的心女 ιοί進行交換。由於交換後可立即使電漿CVD巢冓件 所以為了維護而使電漿CVD裴置1停止的時間，σ作， 口谘閉構件101的交換時間，從而可謀求因維:為開 電聚CVD裝置停止時間的大幅縮短。 ° ^成之 下面’參照圖3⑷及⑴對交換裝置 圖3 (a)為交換裝置301的側面圖。圖3 (b)拖罢 3〇1的平面圖。除了交換裝置3〇1以外，為了進行置 還表示了開口密閉構件！ (M、真空容器！ 〇 2、在電y ^ ’ 裝置上為了搬入工作托盤1〇8而設置的裝載鎖定' D 在父換裝置301上設置有上述的臂2〇1。臂2〇ι 方向（箭形符號A)及高度方向（箭形符號B)二7、’ =臂2〇1上還具有上述的扣合部2〇2、氣虹2〇3。= 讀裝置301可在軌道观上沿橫方向（箭形符號C)進 仃移動。在真空容器102的附近設置有電極倉庫撕 =倉庫304中上下設置有多數個料架，且使拆除的開口 ίΐ構件1〇1載置在其中的一個料架上。而且，在另外的 r杀上載置新品或清潔完畢的開口密閉構件。 、 交換裝置301拆除開口密閉構件1〇1， f移動到電極倉庫綱處。然後，在電極倉庫fot置放 拆除的開口密閉構件觀。接著，利用臂2〇1取出新品或 9 20053855.4 清潔完畢的開口密閉構件101。然後，在軌道302上移動 到真空容器102的位置。接著，將新品或清潔完畢的開口 密閉構件101安裝到真空容器1〇2上後，升起電漿CVD 裝置1。被搬運到電極倉庫304的開口密閉構件101，放置 到可進行清潔作業的溫度，然後對開口密閉構件1〇1進行 清潔等維護作業。The reaction gas in which the electrode 103 is dispersed is ionized by the high-frequency power applied by the high-frequency power source 109 to generate plasma p. A thin film is formed on the substrate 110 by this electropolymerization p. -The dismantling of the opening opening and closing member 101 from the vacuum container ^ into the vacuum chamber 7 will be described with reference to FIG. 2. The -Π! Component 101 is separately disassembled with the electro-cvd device 1 and moved. Details of the exchange device = Details will be described later. 2G1 is an arm provided on the switching device, and is driven in the direction of mor. The cylinder 201 is provided on the arm 201, and the engaging portion 203 is threaded on the top end of the rod portion of the cylinder 203, so that the engaging portion 202 can be moved in the left-right direction of the 5 moving hole cylinder MAi. Im in the figure. . The opening-sealing member 101 is removed as described below. Move the arm 2 01 to the same height as the open-closed structure 106. Then, the suspended spreader is used to move and fasten with the spreader 106. When the block & section 202 violates the rules, as shown in FIG. 2, the opening seal 201 is moved upward so that the member 101 and the electrode 103 are integrated 8 20053 ^ ¾ is removed from the vacuum container 102. In this way, the plasma CVD apparatus according to the embodiment of the present invention is removed integrally with the electrode 103 and the opening sealing member 101. Therefore, a new product or a cleaned electrode is replaced by another woman. Since the plasma CVD nest can be made immediately after the exchange, the time for which the plasma CVD is set to 1 for maintenance, σ, and the exchange time of the opening and closing member 101 can be obtained. Significantly reduced device downtime. ° ^ 成 之下 ’Referring to FIG. 3 (a) and (b), the exchange device is shown in FIG. 3 (a) is a side view of the exchange device 301. Figure 3 (b) A plan view of Tuo301. In addition to the exchange unit 301, an open-closed member is shown for placement! (M, vacuum container! 〇2, the load lock provided on the electric y ^ device for carrying in the work tray 108) D The above-mentioned arm 201 is provided on the parent changing device 301. The direction of the arm 200 is (Arrow-shaped symbol A) and height direction (arrow-shaped symbol B) II. 7, '= arm 021 also has the above-mentioned fastening portion 202, air rainbow 203. = The reading device 301 can be viewed from the orbit The upper part moves in a horizontal direction (arrow symbol C). An electrode warehouse is provided near the vacuum container 102. A plurality of racks are arranged up and down in the warehouse 304, and the removed opening member 101 is placed on the One of the racks. Furthermore, a new or cleaned opening-closing member is placed on another r-kill. The exchange device 301 removes the opening-closing member 101, and then moves to the electrode warehouse. Then, the electrode warehouse The fot is placed with the view of the removed opening-sealing member. Next, use the arm 201 to take out the new product or 9 20053855.4 cleaned opening-sealing member 101. Then, move it to the position of the vacuum container 102 on the rail 302. Next, the new product or clean The completed opening-sealing member 101 is attached to a vacuum After the container 102 is put on, the plasma CVD apparatus 1 is lifted up. The opening sealing member 101 is transported to the electrode warehouse 304 and placed at a temperature at which cleaning operations can be performed, and then the opening sealing member 101 is cleaned and maintained.
在這種具有電漿CVD裝置！和交換裝置3〇1的成膜 中]由於可將附著了生成物的電極1〇3及開口密閉構件收 ，清潔完畢的電極103及開口密閉構件1〇1成一體的進 又換所以可在父換後立即升起電漿There is a plasma CVD device in this! During the film formation with the exchange device 3101] The electrode 103 and the opening-sealing member with the product attached can be retracted, and the cleaned electrode 103 and the opening-sealing member 101 can be integrated and replaced. Raise the plasma immediately after the father changes
==因電極⑽及其料部_朗造叙電衆CVD ^像太時間’可提高成膜製程的生產性。本發明對 於像太％電_防反射卿絲_樣，電極1G3及雷托 次高的成膜製程具有較高的效果。而且ΐ 冷部為止的關長，所財發_作収果增大。 f電極周_清料間，不會對電衆 u展置1的停止時間帶來影塑 兒水 慎地進行清潔作業。藉由利用可曰間小心謹 地進行維護之電極〗03及開用口費時間小心謹慎 膜製程的成品率。 〜閉構彳⑼，能夠提高成 如利用這種成臈裝置及成膜裝置和 、、先，可得到下面這樣的作用效果。 置的成膜系 ⑴藉由縮短因電極及其周邊部的維護所造成之成膜 20053盔5孤 裝置的停止咖，可提高生產效率。 ()由於可花費時間小心謹慎地進行電極及复 的維護，所以能夠提高成膜製程的成品率。 f j上的實施形態中，是對一台電漿CVD裝置}設 置一台父換裝置301，但也可對多數台電漿cVD步 ΐ二30卜在重視生產性之量產製程的生產線 iso! ^ 電漿CVD裝置卜由於本發明的交換裝== Because of the electrode ⑽ and its material department _Lang Zuoshu Dianzhong CVD ^ Image too time 'can improve the productivity of the film formation process. The present invention has a high effect on the film formation process with the electrode 1G3 and the second highest retort like the electric anti-reflection wire. In addition, the directors of the cold department have increased their earnings. felectrode week_Cleaning room, will not bring shadow to children's stop time when u is set to 1, and clean carefully. By using electrodes that can be maintained carefully and carefully, it takes time and care to open the mouth. The yield of the membrane process. ~ Closed structure can improve the performance. By using such a structure forming device and film forming device, first, the following effects can be obtained. The film-forming system that is installed 缩短 can shorten the film formation caused by the maintenance of the electrode and its peripheral parts. 20053 Helmet 5 isolation device can improve production efficiency. () Since the maintenance of the electrode and the complex can be performed with care and time, the yield of the film formation process can be improved. In the embodiment of fj, a parent CVD device 301 is provided for a plasma CVD device, but it can also be used for most plasma cVD steps. The 30 is a production line iso production line that emphasizes productivity! ^ Electric Due to the exchange device of the present invention,
置01可在轨道302上進行移動，所以利用—台 3六〇1可進行多數台電聚CVD裝置i的開口密閉構件⑻、的 广換藉此，本申請發明的成膜系統在並列了多數個電漿 ί置丄之多數個量產製程的生產線上，可起到更大的效 果。圖4所示為它的一個例子。 利用電聚CVD裝置1之量產製程的生產線，由斤制 ，40卜盒設置部4〇2、運載機4〇3、運載平臺4〇4、^載 室405及 CVD裝置i構成，且該量產製程的生產線 如L1至L3所示，3條並列設置。在從L1到u的3條生 產線的電漿CVD裝置丨附近，鋪設有執道3〇2，且在其上 面設置有交換裝置301。控制部401為對構成量產製程生 產線的裝置進行控制的裝置。盒設置部4〇2為置放各4⑽ 的位置’且盒406用於置入成膜了的基板11〇或载^有成 膜了的基板110之工作托盤108。運載機403是使置入了 工作托盤108的盒406在盒設置部402和運载平臺4〇4之 間進行移動的裝置。運載平臺404是從盒中將载^ 了某板 no之工作托盤108取出並搬入到裝載室4〇5中，ς裝 2005輝6, 載室405中將載置了基板110之工 盒部40ό中的裝置。裝載室405是 ς 出並置入 作托盤108搬入到電漿CVD裝置、 土板110的工 置！中搬出的裝置。 置1内，或從電聚㈣裝 例如，在量產製程生產、線L1的電聚cv 極及其周邊部弄辦，需要進行電極 =^ 換裝置301在執道3〇2上進行 It况下，使父 產線U的電漿CVD裝置】附近。秋後移動=產製程生 下電襞CVD裝置1的開口密閉構件101 所示，取 庫304中與新品或清洗了的開口密妾=在，極倉 然後，移動到量產製程生產線L1的電漿c VD订父換。 安褒開口密閉構件101。對量產f 4置1附近， 咖裝置電f 置3〇1提局多數條量產製程生產線的生產性。。又換裝 雖，在本發明的實施形態中表 置即可，並無制地限定。 和實施例的對應關係進行說明。 2。申:==第圍二1的器相當於真空容器 或清潔完畢的開口密閉構ς 1〇/口在閉構件相當於新品 限定發：上’然其並非用以 和範圍内，當可作此=纟不麟本發明之精神 乍二夺之更動與潤飾，因此本發明之保護 20053,§5ρ74 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為根據本發明的實施形態之電漿CVD裝置的構 成圖。 圖2為本發明的實施形態之電漿CVD裝置開口密閉 構件的拆卸說明圖。 圖3 (a)為本發明的實施形態之成膜系統所使用的交 換裝置的側面圖，（b)為交換裝置的平面圖。 ®、圖4將本發明的實施形態之成膜系統應用於量產製程 時的設計圖。 【主要元件符號說明】 1 :電漿CVD裝置 101 :開口密閉構件 101a :邊緣部 102 :真空容器 參 102a :開口 103 :電極 104 :絕緣構件 105 :反應氣體通路 106 :吊具 107 :加熱器 108 :工作托盤 10 9 ·南頻電源 13 20053^4 110 :基板 111 :定位銷 112 :密封部 201 :臂 202 :扣合部 203 :氣缸 301 ··交換裝置 302 :執道 303 :裝載鎖定室 304 :電極倉庫 401 :控制部 402 :盒設置部 403 :運載機 404 :運載平臺 405 :裝載室 406 ·•盒 P :電漿 14The position 01 can be moved on the track 302. Therefore, the number of opening and closing members 电 of the galvanic CVD device i can be changed by using 台 3601. Therefore, the film-forming system of the present invention has a plurality of Plasma sets up most of the production lines of mass production processes, can play a greater effect. Figure 4 shows an example of this. The production line using the mass production process of the electropolymerization CVD apparatus 1 is composed of a kilogram, a 40 box setting section 402, a carrier 403, a carrier platform 404, a carrier chamber 405, and a CVD apparatus i. The production lines of the mass production process are shown in L1 to L3, and three are arranged side by side. In the vicinity of the plasma CVD apparatus of the three production lines from L1 to u, a duct 302 is laid, and an exchange device 301 is provided thereon. The control unit 401 is a device that controls devices constituting a production line of a mass production process. The box setting section 402 is a position for placing each of 4 '', and the box 406 is used to place the film-formed substrate 110 or the work tray 108 on which the film-formed substrate 110 is placed. The carrier 403 is a device that moves the box 406 in which the work tray 108 is placed between the box setting section 402 and the carrier platform 404. The carrying platform 404 is to take out the work tray 108 carrying a certain board from the box and carry it into the loading chamber 405, and install the 2005 Hui 6, the loading chamber 405 will be the box section 40 on which the substrate 110 is placed. Device. The loading chamber 405 is a place where the tray 108 is moved into the plasma CVD device and the soil plate 110. Device being carried out. Set in 1 or install it from an electric polymer. For example, in the mass production process production, the electric polymer cv electrode of line L1 and its surroundings need to be replaced by an electrode. ^ Replacement device 301 is performed on the road 302. The plasma CVD apparatus of the parent production line U is brought to the vicinity. After the autumn movement = As shown in the opening and closing member 101 of the electro-chemical CVD apparatus 1 in the production process, the pick-up in the storage 304 is the same as that of the new or cleaned opening = at the pole warehouse. Then, move the electric Pulp c VD order for the father.安 褒 opening closed member 101. For mass production, set f1 to near 1, and coffee plant to set f301 to increase the productivity of most production lines. . Refitting Although it may be set in the embodiment of the present invention, it is not limited. The correspondence relationship with the embodiment will be described. 2. Shen: == The second device is equivalent to a vacuum container or a cleaned closed opening. 1/10 / The closed member is equivalent to a new product. It is not intended to be used within the scope. It can be used as such. = Bian Bulin The spirit of the present invention has been changed and retouched at first. Therefore, the scope of protection of the present invention 20053, §5ρ74 shall be determined by the scope of the attached patent application. [Brief Description of the Drawings] Fig. 1 is a configuration diagram of a plasma CVD apparatus according to an embodiment of the present invention. Fig. 2 is an exploded view of the opening and closing member of the plasma CVD apparatus according to the embodiment of the present invention. Fig. 3 (a) is a side view of a switching device used in a film forming system according to an embodiment of the present invention, and (b) is a plan view of the switching device. ®, Fig. 4 is a design diagram when the film-forming system according to the embodiment of the present invention is applied to a mass production process. [Description of Symbols of Main Components] 1: Plasma CVD device 101: Opening and sealing member 101a: Edge 102: Vacuum container 102a: Opening 103: Electrode 104: Insulating member 105: Reaction gas path 106: Hanger 107: Heater 108 : Work Tray 10 9 · Nanbei Power Supply 13 20053 ^ 4 110: Substrate 111: Locating Pin 112: Sealing Section 201: Arm 202: Fastening Section 203: Air Cylinder 301 · Exchange Device 302: Execution Channel 303: Load Locking Room 304 : Electrode warehouse 401: Control unit 402: Box setting unit 403: Carrier 404: Carrying platform 405: Loading room 406 · Box P: Plasma 14