JP4402387B2 - ＡｌＮ焼結体の製造方法 - Google Patents

ＡｌＮ焼結体の製造方法 Download PDF

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Publication number
JP4402387B2
JP4402387B2 JP2003199987A JP2003199987A JP4402387B2 JP 4402387 B2 JP4402387 B2 JP 4402387B2 JP 2003199987 A JP2003199987 A JP 2003199987A JP 2003199987 A JP2003199987 A JP 2003199987A JP 4402387 B2 JP4402387 B2 JP 4402387B2
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Japan
Prior art keywords
sintered body
sintering
aln
mirror
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003199987A
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English (en)
Japanese (ja)
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JP2004250318A5 (https=
JP2004250318A (ja
Inventor
田中　　滋
秋雄 千葉
康隆 鈴木
一弘 廣瀬
民人 川東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2003199987A priority Critical patent/JP4402387B2/ja
Publication of JP2004250318A publication Critical patent/JP2004250318A/ja
Publication of JP2004250318A5 publication Critical patent/JP2004250318A5/ja
Application granted granted Critical
Publication of JP4402387B2 publication Critical patent/JP4402387B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Ceramic Products (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2003199987A 2002-12-27 2003-07-22 ＡｌＮ焼結体の製造方法 Expired - Fee Related JP4402387B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003199987A JP4402387B2 (ja) 2002-12-27 2003-07-22 ＡｌＮ焼結体の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002381630 2002-12-27
JP2003199987A JP4402387B2 (ja) 2002-12-27 2003-07-22 ＡｌＮ焼結体の製造方法

Publications (3)

Publication Number Publication Date
JP2004250318A JP2004250318A (ja) 2004-09-09
JP2004250318A5 JP2004250318A5 (https=) 2005-08-25
JP4402387B2 true JP4402387B2 (ja) 2010-01-20

Family

ID=33031872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003199987A Expired - Fee Related JP4402387B2 (ja) 2002-12-27 2003-07-22 ＡｌＮ焼結体の製造方法

Country Status (1)

Country Link
JP (1) JP4402387B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6412886B2 (ja) * 2014-01-14 2018-10-24 株式会社アライドマテリアル ＡｌＮ基板

Also Published As

Publication number Publication date
JP2004250318A (ja) 2004-09-09

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