JP4393085B2 - 放射線検出装置 - Google Patents

放射線検出装置 Download PDF

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Publication number
JP4393085B2
JP4393085B2 JP2003060062A JP2003060062A JP4393085B2 JP 4393085 B2 JP4393085 B2 JP 4393085B2 JP 2003060062 A JP2003060062 A JP 2003060062A JP 2003060062 A JP2003060062 A JP 2003060062A JP 4393085 B2 JP4393085 B2 JP 4393085B2
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JP
Japan
Prior art keywords
thin film
film transistor
capacitor
layer
photoelectric conversion
Prior art date
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Expired - Fee Related
Application number
JP2003060062A
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English (en)
Japanese (ja)
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JP2003333427A (ja
JP2003333427A5 (enExample
Inventor
慶一 野村
正和 森下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003060062A priority Critical patent/JP4393085B2/ja
Publication of JP2003333427A publication Critical patent/JP2003333427A/ja
Publication of JP2003333427A5 publication Critical patent/JP2003333427A5/ja
Application granted granted Critical
Publication of JP4393085B2 publication Critical patent/JP4393085B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2003060062A 2002-03-06 2003-03-06 放射線検出装置 Expired - Fee Related JP4393085B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003060062A JP4393085B2 (ja) 2002-03-06 2003-03-06 放射線検出装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002060570 2002-03-06
JP2002-60570 2002-03-06
JP2003060062A JP4393085B2 (ja) 2002-03-06 2003-03-06 放射線検出装置

Publications (3)

Publication Number Publication Date
JP2003333427A JP2003333427A (ja) 2003-11-21
JP2003333427A5 JP2003333427A5 (enExample) 2006-04-20
JP4393085B2 true JP4393085B2 (ja) 2010-01-06

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ID=29713792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003060062A Expired - Fee Related JP4393085B2 (ja) 2002-03-06 2003-03-06 放射線検出装置

Country Status (1)

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JP (1) JP4393085B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100720610B1 (ko) 2005-09-12 2007-05-21 아이쓰리시스템 주식회사 방사선 검출기
JP5131508B2 (ja) * 2005-11-14 2013-01-30 Ｎｌｔテクノロジー株式会社 受光回路
US9473714B2 (en) * 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
JP5745369B2 (ja) 2010-09-06 2015-07-08 株式会社半導体エネルギー研究所 電子機器
JP5830867B2 (ja) * 2011-02-03 2015-12-09 ソニー株式会社 放射線撮像装置および放射線撮像表示システム
CN114460620B (zh) * 2020-11-10 2025-07-22 京东方科技集团股份有限公司 一种平板探测器及其驱动方法
JP7264182B2 (ja) * 2021-02-03 2023-04-25 ソニーグループ株式会社 撮像素子、積層型撮像素子、撮像装置及び電子装置

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JP2003333427A (ja) 2003-11-21

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