JP4393021B2 - エッチング液の製造方法 - Google Patents

エッチング液の製造方法 Download PDF

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Publication number
JP4393021B2
JP4393021B2 JP2001227784A JP2001227784A JP4393021B2 JP 4393021 B2 JP4393021 B2 JP 4393021B2 JP 2001227784 A JP2001227784 A JP 2001227784A JP 2001227784 A JP2001227784 A JP 2001227784A JP 4393021 B2 JP4393021 B2 JP 4393021B2
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Japan
Prior art keywords
etching
acid
solution
etching solution
weight
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Expired - Lifetime
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JP2001227784A
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English (en)
Japanese (ja)
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JP2002115083A (ja
JP2002115083A5 (enExample
Inventor
貞雄 波賀
勝治 伊藤
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Mitsubishi Chemical Corp
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Nippon Kasei Chemical Co Ltd
Mitsubishi Chemical Corp
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Application filed by Nippon Kasei Chemical Co Ltd, Mitsubishi Chemical Corp filed Critical Nippon Kasei Chemical Co Ltd
Priority to JP2001227784A priority Critical patent/JP4393021B2/ja
Publication of JP2002115083A publication Critical patent/JP2002115083A/ja
Publication of JP2002115083A5 publication Critical patent/JP2002115083A5/ja
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JP2001227784A 2000-07-31 2001-07-27 エッチング液の製造方法 Expired - Lifetime JP4393021B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001227784A JP4393021B2 (ja) 2000-07-31 2001-07-27 エッチング液の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-231018 2000-07-31
JP2000231018 2000-07-31
JP2001227784A JP4393021B2 (ja) 2000-07-31 2001-07-27 エッチング液の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005117882A Division JP4258489B2 (ja) 2000-07-31 2005-04-15 エッチング液の製造方法およびエッチング方法
JP2007205123A Division JP2007318172A (ja) 2000-07-31 2007-08-07 エッチング液の製造方法

Publications (3)

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JP2002115083A JP2002115083A (ja) 2002-04-19
JP2002115083A5 JP2002115083A5 (enExample) 2005-06-16
JP4393021B2 true JP4393021B2 (ja) 2010-01-06

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JP2001227784A Expired - Lifetime JP4393021B2 (ja) 2000-07-31 2001-07-27 エッチング液の製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210265181A1 (en) * 2016-04-22 2021-08-26 Toshiba Memory Corporation Substrate treatment apparatus and substrate treatment method

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005097715A (ja) * 2003-08-19 2005-04-14 Mitsubishi Chemicals Corp チタン含有層用エッチング液及びチタン含有層のエッチング方法
JP2005217193A (ja) * 2004-01-29 2005-08-11 Shinryo Corp シリコン基板のエッチング方法
JP4595048B2 (ja) * 2007-04-18 2010-12-08 滋 木谷 酸洗用水溶液およびその製造方法ならびに資源回収方法
JP5195394B2 (ja) * 2008-12-19 2013-05-08 東ソー株式会社 エッチング液の再生方法
JP2013519098A (ja) * 2010-02-12 2013-05-23 レナ ゲーエムベーハー 硝酸の濃度の測定方法
KR101180517B1 (ko) 2010-11-23 2012-09-06 주식회사 씨에스켐텍 폐액을 이용한 유리 표면의 식각방법 및 식각용 조성물
JP6110814B2 (ja) * 2013-06-04 2017-04-05 富士フイルム株式会社 エッチング液およびそのキット、これらを用いたエッチング方法、半導体基板製品の製造方法および半導体素子の製造方法
CN115433580B (zh) * 2022-10-27 2023-08-18 湖北九宁化学科技有限公司 一种光电行业蚀刻液的生产方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210265181A1 (en) * 2016-04-22 2021-08-26 Toshiba Memory Corporation Substrate treatment apparatus and substrate treatment method
US12046487B2 (en) * 2016-04-22 2024-07-23 Kioxia Corporation Substrate treatment apparatus and substrate treatment method

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