JP4374483B2 - 多層ホトレジストプロセスのための熱硬化性ポリエステル抗反射コーティング - Google Patents

多層ホトレジストプロセスのための熱硬化性ポリエステル抗反射コーティング Download PDF

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Publication number
JP4374483B2
JP4374483B2 JP2000517316A JP2000517316A JP4374483B2 JP 4374483 B2 JP4374483 B2 JP 4374483B2 JP 2000517316 A JP2000517316 A JP 2000517316A JP 2000517316 A JP2000517316 A JP 2000517316A JP 4374483 B2 JP4374483 B2 JP 4374483B2
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composition
group
reflective coating
mixture
dye
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Expired - Lifetime
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Japanese (ja)
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JP2001521187A5 (https=
JP2001521187A (ja
Inventor
シャオ，ジー
ヘスター，コリン
フライム，トニー，ディー．
ブリューワー，テリー，エル．
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ブリューワー・サイエンス・インコーポレイテッド
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Publication of JP2001521187A5 publication Critical patent/JP2001521187A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/109—Polyester

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000517316A 1997-10-20 1998-10-20 多層ホトレジストプロセスのための熱硬化性ポリエステル抗反射コーティング Expired - Lifetime JP4374483B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/954,425 1997-10-20
US08/954,425 US5935760A (en) 1997-10-20 1997-10-20 Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
PCT/US1998/022143 WO1999021058A1 (en) 1997-10-20 1998-10-20 Thermosetting polyester anti-reflective coatings for multilayer photoresist processes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008293674A Division JP4374502B2 (ja) 1997-10-20 2008-11-17 多層ホトレジストプロセスのための熱硬化性ポリエステル抗反射コーティング

Publications (3)

Publication Number Publication Date
JP2001521187A JP2001521187A (ja) 2001-11-06
JP2001521187A5 JP2001521187A5 (https=) 2006-01-05
JP4374483B2 true JP4374483B2 (ja) 2009-12-02

Family

ID=25495407

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000517316A Expired - Lifetime JP4374483B2 (ja) 1997-10-20 1998-10-20 多層ホトレジストプロセスのための熱硬化性ポリエステル抗反射コーティング
JP2008293674A Expired - Lifetime JP4374502B2 (ja) 1997-10-20 2008-11-17 多層ホトレジストプロセスのための熱硬化性ポリエステル抗反射コーティング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008293674A Expired - Lifetime JP4374502B2 (ja) 1997-10-20 2008-11-17 多層ホトレジストプロセスのための熱硬化性ポリエステル抗反射コーティング

Country Status (9)

Country Link
US (3) US5935760A (https=)
EP (1) EP1025462B1 (https=)
JP (2) JP4374483B2 (https=)
KR (1) KR20010031185A (https=)
CN (1) CN1276883A (https=)
CA (1) CA2305461A1 (https=)
DE (1) DE69807913T2 (https=)
TW (1) TW446738B (https=)
WO (1) WO1999021058A1 (https=)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3852889B2 (ja) 1998-09-24 2006-12-06 富士写真フイルム株式会社 フォトレジスト用反射防止膜材料組成物
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
WO2001015211A1 (en) * 1999-08-26 2001-03-01 Brewer Science Improved fill material for dual damascene processes
US20040034134A1 (en) 1999-08-26 2004-02-19 Lamb James E. Crosslinkable fill compositions for uniformly protecting via and contact holes
CN1402840A (zh) * 1999-11-30 2003-03-12 部鲁尔科学公司 用于聚合物防反射涂料的非芳族发色团
JP3795333B2 (ja) * 2000-03-30 2006-07-12 東京応化工業株式会社 反射防止膜形成用組成物
US6323310B1 (en) * 2000-04-19 2001-11-27 Brewer Science, Inc. Anti-reflective coating compositions comprising polymerized aminoplasts
TW556047B (en) 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
CN1398362A (zh) 2000-08-17 2003-02-19 希普列公司 抗蚀剂抗反射涂层组合物
US20020162031A1 (en) * 2001-03-08 2002-10-31 Shmuel Levin Method and apparatus for automatic control of access
TW576859B (en) 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
US20040037768A1 (en) * 2001-11-26 2004-02-26 Robert Jackson Method and system for on-site generation and distribution of a process gas
US20090001524A1 (en) * 2001-11-26 2009-01-01 Siegele Stephen H Generation and distribution of a fluorine gas
US20030121796A1 (en) * 2001-11-26 2003-07-03 Siegele Stephen H Generation and distribution of molecular fluorine within a fabrication facility
US20040151656A1 (en) * 2001-11-26 2004-08-05 Siegele Stephen H. Modular molecular halogen gas generation system
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US6844131B2 (en) 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US8012670B2 (en) 2002-04-11 2011-09-06 Rohm And Haas Electronic Materials Llc Photoresist systems
US7217491B2 (en) * 2002-06-07 2007-05-15 Battelle Memorial Institute Antireflective coatings
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
EP1560070B1 (en) * 2002-10-09 2009-12-30 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
US7038328B2 (en) 2002-10-15 2006-05-02 Brewer Science Inc. Anti-reflective compositions comprising triazine compounds
EP1422565A3 (en) * 2002-11-20 2005-01-05 Shipley Company LLC Multilayer photoresist systems
KR20040044368A (ko) 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
US7264913B2 (en) * 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7008476B2 (en) * 2003-06-11 2006-03-07 Az Electronic Materials Usa Corp. Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof
US20050026084A1 (en) * 2003-07-31 2005-02-03 Garza Cesar M. Semiconductor device and method for elimination of resist linewidth slimming by fluorination
DE102004004865B4 (de) 2004-01-30 2008-01-10 Qimonda Ag Antireflexschicht, die mit einem Photoresist beschichtet ist, enthaltend Polymere auf der Basis von Zimtsäure für die 157 nm Photolithographie
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7081511B2 (en) 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
CN100503756C (zh) * 2004-05-18 2009-06-24 罗姆及海斯电子材料有限公司 与上涂光致抗蚀剂一起使用的涂料组合物
KR101216403B1 (ko) * 2004-07-02 2012-12-28 닛산 가가쿠 고교 가부시키 가이샤 할로겐 원자를 갖는 나프탈렌환을 포함하는 리소그라피용 하층막 형성 조성물
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US20060057501A1 (en) * 2004-09-15 2006-03-16 Hengpeng Wu Antireflective compositions for photoresists
EP1691238A3 (en) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI340296B (en) * 2005-03-20 2011-04-11 Rohm & Haas Elect Mat Coating compositions for use with an overcoated photoresist
EP1876495B1 (en) * 2005-04-19 2011-07-20 Nissan Chemical Industries, Ltd. Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
US7553905B2 (en) * 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
US7638262B2 (en) * 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8017296B2 (en) * 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
KR100997502B1 (ko) * 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100151392A1 (en) * 2008-12-11 2010-06-17 Rahman M Dalil Antireflective coating compositions
WO2010123099A1 (ja) * 2009-04-23 2010-10-28 花王株式会社 電子写真用トナー
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8551686B2 (en) * 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8486609B2 (en) 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
KR101172763B1 (ko) 2010-12-24 2012-08-09 금호석유화학 주식회사 공중합체, 이의 제조방법 및 이를 포함하는 레지스트 조성물
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
CN103387775A (zh) * 2013-08-22 2013-11-13 吴江市冰心文教用品有限公司 一种隔热防水颜料
EP3318337A1 (en) * 2016-11-03 2018-05-09 PPG Industries Ohio, Inc. A coating composition and coating system
KR102417180B1 (ko) * 2017-09-29 2022-07-05 삼성전자주식회사 Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866947A (ja) * 1981-10-16 1983-04-21 Mita Ind Co Ltd 電子写真用感光体
US5234990A (en) * 1992-02-12 1993-08-10 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties for anti-reflective coating applications in deep ultraviolet microlithography
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
US5886102A (en) * 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
JP3053072B2 (ja) * 1996-09-10 2000-06-19 東京応化工業株式会社 レジスト積層体及びそれを用いたパターン形成方法
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions

Also Published As

Publication number Publication date
EP1025462B1 (en) 2002-09-11
TW446738B (en) 2001-07-21
CN1276883A (zh) 2000-12-13
DE69807913D1 (de) 2002-10-17
CA2305461A1 (en) 1999-04-29
JP2001521187A (ja) 2001-11-06
KR20010031185A (ko) 2001-04-16
US6042990A (en) 2000-03-28
DE69807913T2 (de) 2003-01-30
EP1025462A1 (en) 2000-08-09
US6080530A (en) 2000-06-27
JP2009048210A (ja) 2009-03-05
US5935760A (en) 1999-08-10
JP4374502B2 (ja) 2009-12-02
WO1999021058A1 (en) 1999-04-29
EP1025462A4 (en) 2001-01-17

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