CN111458981B - 抗反射用硬掩模组合物 - Google Patents
抗反射用硬掩模组合物 Download PDFInfo
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- CN111458981B CN111458981B CN202010037447.1A CN202010037447A CN111458981B CN 111458981 B CN111458981 B CN 111458981B CN 202010037447 A CN202010037447 A CN 202010037447A CN 111458981 B CN111458981 B CN 111458981B
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- 239000000203 mixture Substances 0.000 title claims abstract description 38
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- 125000003118 aryl group Chemical group 0.000 claims description 8
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- 239000001257 hydrogen Substances 0.000 claims description 5
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- DLDWUFCUUXXYTB-UHFFFAOYSA-N (2-oxo-1,2-diphenylethyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 DLDWUFCUUXXYTB-UHFFFAOYSA-N 0.000 claims description 4
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- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 claims description 4
- QTBPIGIEYBYSPR-UHFFFAOYSA-N (2-nitrophenyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC1=CC=CC=C1[N+]([O-])=O QTBPIGIEYBYSPR-UHFFFAOYSA-N 0.000 claims description 3
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- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 3
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- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
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- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
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- 239000002244 precipitate Substances 0.000 description 2
- OWXVJXMWLBLRCW-UHFFFAOYSA-N pyren-1-ol Chemical compound C1=C2C(O)=CC=C(C=C3)C2=C2C3=CC=CC2=C1.C1=C2C(O)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 OWXVJXMWLBLRCW-UHFFFAOYSA-N 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BCCNTWSBUIVXFE-UHFFFAOYSA-N 1-(dimethoxymethyl)-2-phenylbenzene Chemical compound COC(OC)C1=CC=CC=C1C1=CC=CC=C1 BCCNTWSBUIVXFE-UHFFFAOYSA-N 0.000 description 1
- SHSIOGMJIUZWGE-UHFFFAOYSA-N 1-naphthalen-1-ylfluorene-9,9-diol Chemical compound OC1(C2=CC=CC=C2C=2C=CC=C(C1=2)C1=CC=CC2=CC=CC=C12)O SHSIOGMJIUZWGE-UHFFFAOYSA-N 0.000 description 1
- NXKOSHBFVWYVIH-UHFFFAOYSA-N 2-n-(butoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound CCCCOCNC1=NC(N)=NC(N)=N1 NXKOSHBFVWYVIH-UHFFFAOYSA-N 0.000 description 1
- KFVIYKFKUYBKTP-UHFFFAOYSA-N 2-n-(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCNC1=NC(N)=NC(N)=N1 KFVIYKFKUYBKTP-UHFFFAOYSA-N 0.000 description 1
- YWFPGFJLYRKYJZ-UHFFFAOYSA-N 9,9-bis(4-hydroxyphenyl)fluorene Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 YWFPGFJLYRKYJZ-UHFFFAOYSA-N 0.000 description 1
- QGNVGSLSGBDHCO-UHFFFAOYSA-N C(C1=CC=CC=C1)=O.C1(=CC=CC2=CC=CC=C12)O Chemical compound C(C1=CC=CC=C1)=O.C1(=CC=CC2=CC=CC=C12)O QGNVGSLSGBDHCO-UHFFFAOYSA-N 0.000 description 1
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- 150000001299 aldehydes Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229950011260 betanaphthol Drugs 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 125000001891 dimethoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
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- 229940116333 ethyl lactate Drugs 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical class N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- WROPKKRZYSGSDN-UHFFFAOYSA-N indolo[3,2-c]carbazole Chemical compound C1=C2C(=CC=C1)N=C1C=CC3=C4C=CC=CC4=NC3=C12.C1=C2C(=CC=C1)N=C1C=CC3=C4C=CC=CC4=NC3=C12 WROPKKRZYSGSDN-UHFFFAOYSA-N 0.000 description 1
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- XWLUFINGMMDFPD-UHFFFAOYSA-N naphthalen-1-ol Chemical compound C1=CC=C2C(O)=CC=CC2=C1.C1=CC=C2C(O)=CC=CC2=C1 XWLUFINGMMDFPD-UHFFFAOYSA-N 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
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- CBXWGGFGZDVPNV-UHFFFAOYSA-N so4-so4 Chemical compound OS(O)(=O)=O.OS(O)(=O)=O CBXWGGFGZDVPNV-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- 150000003672 ureas Chemical class 0.000 description 1
Classifications
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G14/02—Condensation polymers of aldehydes or ketones with two or more other monomers covered by at least two of the groups C08G8/00 - C08G12/00 of aldehydes
- C08G14/04—Condensation polymers of aldehydes or ketones with two or more other monomers covered by at least two of the groups C08G8/00 - C08G12/00 of aldehydes with phenols
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/34—Condensation polymers of aldehydes or ketones with monomers covered by at least two of the groups C09D161/04, C09D161/18 and C09D161/20
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/006—Anti-reflective coatings
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- H—ELECTRICITY
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Abstract
提供一种抗反射硬掩模组合物，包含(a)由以下述化学式1表示的聚合物或包含其的聚合物混合物(blend)；及(b)有机溶剂，[化学式1]
Description
技术领域
本发明涉及具有对平版印刷工序有用的抗反射膜特性的硬掩模(hard mask)组合物，涉及一种含有在紫外线波长区域具有强吸收的吲哚并咔唑(indolocarbazole)类芳香族环(aromatic ring)的聚合物及包含其的硬掩模组合物。
背景技术
最近，在半导体产业逐渐要求微细化工艺的情形下，为了实现这种超微细技术，有效的平版印刷(lithographic)工序是必不可少的。特别是，对在蚀刻过程中不可或缺的硬掩模工序的新型材料的要求正在增加是目前的实际情况。
一般而言，硬掩模膜质起到作为中间膜的作用，所述中间膜通过选择性蚀刻过程将光刻胶的微细图案转写到下部基板层。因此，硬掩模层要求耐化学性、耐热性及蚀刻抵抗性等特性，以便在多次蚀刻过程期间能够挺住。就原来使用的硬掩模膜质而言，使用以化学气相沉积(CVD)方式制造而成的ACL(amorphous carbon layer(非晶碳层))膜质，而针对其的缺点是设备投资单价高，而且在由进行工序时发生的颗粒(particle)及膜质不透明引起的照相平版印刷工序时的对准(photolithographic align)问题等，因此在使用方面，存在诸多很不便之处。
最近，导入以旋涂(spin on coating)方法形成的硬掩模方式(spin-onhardmask)来替代这种化学气相沉积方法。旋涂方法是利用对溶剂具有溶解性的有机高分子物质来形成硬掩模组合物，此时最重要的特性是需要形成同时具有耐蚀刻性的有机高分子涂膜。
但是，就对作为这种在有机硬掩模层所要求的两种特性的溶解性与耐蚀刻性的特性而言，针对彼此相互矛盾关系，需要一种能够全部满足它们的硬掩模组合物。最近介绍了在满足这种有机硬掩模材料特性的同时导入半导体平版印刷工艺的材料(公布专利10-2009-0120827，公布专利10-2008-0107210，专利WO 2013100365 A1)，它们是利用了共聚物的硬掩模材料，该共聚物是利用羟基芘(hydroxypyrene)并以原有酚醛树脂制备法合成的且具有适当的高分子分子量。
但是，在最近随着半导体平版印刷工艺经过更进一步微细化的过程的情形下，由于这种有机硬掩模材料相比原有无机硬掩模材料，在蚀刻工序中的蚀刻选择比不足，陷入了难以充分执行掩模作用的境地。因此，迫切需要导入在蚀刻工序中更优化的有机硬掩模材料。
发明内容
要解决的问题
本发明目的在于提供一种高分子溶解性优异的同时蚀刻选择性高且对多次蚀刻(multi etching)的耐性足够的硬掩模聚合物及包含其的组合物。
本发明目的在于提供一种能够使抗蚀剂与背衬层间的反射性最小化、可以用于执行平版印刷技术的新型硬掩模聚合物及包含其的组合物。
解决问题的方案
根据本发明的一个实施例的硬掩模组合物包含：(a)由以下述化学式1表示的聚合物或包含其的聚合物混合物(blend)；及
(b)有机溶剂，
[化学式1]
发明的效果
本发明一个实施例的基于吲哚并咔唑类高分子的硬掩模组合物相比于原有酚醛类高分子，聚合速度非常快。
本发明一个实施例的基于吲哚并咔唑类高分子的硬掩模组合物，封装密度非常高，从而在形成薄膜的情况下，在膜密度提高的情形下，具有耐蚀刻性非常优异的特性。因此，相比于原有有机硬掩模，蚀刻选择比高，从而对多次蚀刻的耐性足够，可以提供具有优异的图案评价结果的平版印刷结构物。
本发明一个实施例的基于吲哚并咔唑类高分子的硬掩模组合物，在形成膜时，具有在ArF(193nm)、KrF(248nm)等深紫外线(Deep UV)区域的作为抗反射膜有用范围的折射率及吸收度，从而可以使抗蚀剂与背衬层间的反射性最小化。
具体实施方法
根据本发明，提供一种包含(a)以下述化学式1表示的聚合物或包含其的聚合物混合物(blend)及(b)有机溶剂的抗反射硬掩模组合物。
[化学式1]
在所述式中，R1及R2基团分别为选自由氢(H)、C1～C10的烷基(alkyl)及C6～C20的芳基(aryl)组成的组的任一个，R1及R2可以彼此相同或不同。
R1及R2可以为由具有醛、缩醛、缩酮、二甲氧基、二乙氧基官能团的化合物衍生的取代基。优选地，R1及R2分别由氢或如下芳香族化合物形态构成。
R1及R2中至少一个为氢，另一个使用中的任一个，这在高分子溶解度方面是可以优选的。
另一方面，A可以由C6～C40的具有羟基(OH)的芳香族化合物构成。优选地，A选自在下述结构的化合物中的任一个化合物构成。
作为A当使用中的任一个时，在高分子溶解度方面更推荐。
其中，具有m/(m+n)＝0.05～0.9范围，全体共聚物的重均分子量(Mw)具有1,000～30,000之间的范围，优选地，可以具有2,000～5,000之间的范围。
另一方面，为了制备硬掩模组合物，就由上述(a)所述化学式1表示的聚合物而言，相对于使用的(b)有机溶剂100重量份，优选使用1～30％重量份。当由吲哚并咔唑(indolocarbazole)制备的聚合物的使用不足1重量份时，达不到所希望的涂覆厚度，或者当吲哚并咔唑制备的聚合物的使用超过30重量份时，超过所希望的涂覆厚度，难以匹配为准确的涂覆厚度。
而且，作为有机溶剂，只要是对上述含芳香族环聚合物具有充分溶解性的有机溶剂，则不被特别地限定，例如，可以列举丙二醇单甲醚乙酸酯(PGMEA)、环己酮、乳酸乙酯等。
另外，本发明的抗反射硬掩模组合物还可以追加包含(c)交联剂组分及(d)酸(acid)催化剂。
本发明的硬掩模组合物中使用的所述(c)交联剂组分，优选能够由产生的酸在催化作用的反应中，根据加热而将聚合物的重复单位进行交联，所述(d)酸催化剂优选为由热活化的酸催化剂。
使用与本发明的硬掩模组合物的所述(c)交联剂组分，只要是可以以由生成的酸来进行催化作用的方式与含有芳香族环聚合物的羟基进行反应的交联剂，则不被特别地限定。对此具体举例，可以例如醚化的氨基树脂，甲基化的或丁基化的三聚氰胺树脂及甲基化的或丁基化的脲醛树脂(Urea Resin)、甘脲化合物或双环氧化合物等。所述甲基化的或丁基化的三聚氰胺树脂具体例为N-甲氧甲基-三聚氰胺树脂或N-丁氧甲基-三聚氰胺树脂，所述双环氧化合物具体例为2,6-双(羟甲基)-p-甲酚化合物。
在本发明的硬掩模组合物中使用的所述(d)酸催化剂，可以使用诸如对甲苯磺酸一水化物(p-toluenesulfonic acid monohydrate)的有机酸，并且也可以使用谋求保管稳定性的TAG(Thermal Acid Generater：热酸发生剂)系统的化合物作为催化剂。TAG为在热处理时会释放酸的酸发生剂化合物，例如优选使用吡啶对甲苯磺酸盐(Pyridinium P-toluene sulfon ate)、2,4,4,6-四溴环己二烯酮、安息香甲苯磺酸酯(benzointosylate)、2-硝基苯基甲苯磺酸酯及有机磺酸的烷基酯等。
本发明的硬掩模组合物中使用的所述(d)酸催化剂，可以使用诸如对甲苯磺酸一水化物(p-toluenesulfonic acid monohydrate)的有机酸，并且也可以使用谋求保管稳定性的TAG(Thermal Acid Generater：热酸发生剂)系统的化合物作为催化剂。TAG为在热处理时会释放酸的酸发生剂化合物，例如优选使用吡啶对甲苯磺酸盐(Pyridinium P-toluene sulfonat e)、2,4,4,6-四溴环己二烯酮、安息香甲苯磺酸酯、2-硝基苯基甲苯磺酸酯及有机磺酸的烷基酯等。
在最终硬掩模组合物中，在还包含(c)交联剂组分及(d)酸催化剂来形成时，本发明的硬掩模组合物(a)使用从在紫外线区域具有强吸收特性的吲哚并咔唑制备的聚合物或包含该聚合物的聚合物混合物(blend)1～30重量％，更优选3～15重量％，(c)使用交联剂组分0.1～5重量％，更优选0.1～3重量％，(d)使用酸催化剂0.001～0.05重量％，更优选0.001～0.03重量％，(b)作为剩余组分使用有机溶剂，从而形成为总100重量％，优选地，有机溶剂含有75～98重量％。
其中，当所述含芳香族环(aromatic ring)聚合物不足1重量％时，达不到所希望的涂覆厚度，当所述含芳香族环(aromatic ring)聚合物超过30重量％时，超过所希望的涂覆厚度，难以匹配为准确的涂覆厚度。
而且，所述交联剂组分不足0.1重量％时，可能不会显示交联特性，超过5重量％时，因过量投入从而涂膜的光学特性会变更。
另外，所述酸催化剂不足0.001重量％时，可能不会很好地显示交联特性，超过0.05重量％时，因过量投入而导致的酸度增加，会给保管稳定性造成影响。
下面通过实施例，更详细地说明本发明，但下述实施例只是用于说明目的，并非用于限制本发明的权利范围。
制备例1)
在250mL圆形烧瓶中，将吲哚并咔唑(5,11-Dihydroindolo[3,2-b]carb azole(5,11-二氢吲哚并[3,2-b]咔唑))13g(50mmol)和苯甲醛(benzal dehyde)12.7g(120mmol)以及1-萘酚(1-naphthol)7.2g(50mmol)，在60度温度下，完全溶解于γ-丁内酯(GBL；γ-Butyrolactone)98g后，向其中添加硫酸(sulfuric acid)原液1g。
将反应温度保持在约120℃左右，聚合约12小时左右后，
将反应物置入过量的甲醇/水(7:3)共溶剂后，利用三乙胺(TEA)进行中和。将生成的沉淀物重新溶解于适当量的GBL溶剂后，利用过量的乙醇/水(8:2)共溶剂进行再沉淀。
对生成的沉淀物进行过滤，在50度真空烘箱中干燥约20小时左右后，可以获得重均分子量(Mw)为2,400的高分子。
制备例2)
将吲哚并咔唑13g(50mmol)和苯甲醛12.7g(120mmol)以及1-羟基芘(1-Pyrenol)11g(50mmol)以与制备例1相同的方式合成高分子。
高分子提纯后，可以获得重均分子量(Mw)为2,500的高分子。
制备例3)
将吲哚并咔唑13g(50mmol)和2-萘醛(2-naphthaldehyde)18.7g(120mmol)以及1-羟基芘11g(50mmol)以与制备例1相同的方式合成高分子。
高分子提纯后，可以获得重均分子量(Mw)为2,300的高分子。
制备例4)
将吲哚并咔唑18g(70mmol)和苯甲醛12.7g(120mmol)以及9,9-双羟苯基芴{9,9-Bis(4-hydroxyphenyl)fluorene}10.5g(30mmol)以与制备例1相同的方式合成高分子。
高分子提纯后，可以获得重均分子量(Mw)为2,600的高分子。
制备例5)
将吲哚并咔唑18g(70mmol)和苯甲醛12.7g(120mmol)以及9,9-双羟基萘基芴{9,9-Bis(4-hydroxynaphtyl)fluorene(9,9-双(4-羟基萘基)芴)}13.5g(30mmol)以与制备例1相同的方式合成高分子。
高分子提纯后，可以获得重均分子量(Mw)为2,400的高分子。
制备例6)
将吲哚并咔唑18g(70mmol)和联苯甲醛(biphenyl aldehyde)21.8g(120mmol)以及9,9-双羟苯基芴10.5g(30mmol)，以与制备例1相同的方式合成高分子。
高分子提纯后，可以获得重均分子量(Mw)为2,500的高分子。
制备例7)
将吲哚并咔唑13g(50mmol)和联苯甲醛二甲基缩醛(biphenylaldeh yde dimthylacetal)25g(110mmol)以及1-羟基芘11g(50mmol)以与制备例1相同的方式合成高分子。
高分子提纯后，可以获得重均分子量(Mw)为2,600的高分子。
制备例8)
将吲哚并咔唑13g(50mmol)和4-苯氧基苯甲醛(4-Phenoxybenzalde hyde)24g(120mmol)以及1-羟基芘11g(50mmol)，以与制备例1相同的方式合成高分子。
高分子提纯后，可以获得重均分子量(Mw)为2,500的高分子。
制备例9)
将吲哚并咔唑13g(50mmol)和1-萘醛18.7g(120mmol)以及2-萘酚7.2g(50mmol)以与制备例1相同的方式合成高分子。
高分子提纯后，可以获得重均分子量(Mw)为2,400的高分子。
比较制备例)酚醛类聚合物合成
将9,9-双羟苯基芴35g(100mmol)和苯甲醛12.7g(120mmol)溶解于PGMEA115g后，向其中添加浓硫酸1g。
以与制备例1相同的方式聚合后，提纯高分子，在真空烘箱中干燥后，可以获得重均分子量为3,300的高分子。
[制备例1～9及比较制备例]
硬掩模组合物制备
将从制备例1～9及比较制备例制备的高分子分别称量0.9g，将它们分别与甘脲化合物交联剂(Powderlink 1174)0.1g和吡啶对甲苯磺酸盐(Pyridinium P-toluenesulfonate)1mg一起分别加入至丙二醇单甲醚乙酸酯(PGMEA)9g，进行溶化后过滤，从而分别制成了制备例1～9及比较制备例的样品溶液。
将由制备例1～9及比较制备例制备的样品溶液分别旋涂于硅片，在240℃下烤60秒，形成厚度的膜。此时，分别求出所形成的膜的折射率(refractive index)n和吸光系数(extinction coefficient)k。使用设备为椭偏仪(Ellipsometer,J.A.Woollam公司)，将其测量结果显示于表1中。
评价结果，确认了在ArF(193nm)及KrF(248nm)波长下具有能够用作抗反射膜的折射率及吸收度。通常而言，用作半导体抗反射膜的材料折射率范围为1.4～1.8左右，重要的是吸光系数，通常k数值如果为0.3以上，则在用作抗反射膜方面没有问题，因此可知根据本发明一个实施例的硬掩模组合物可以用作抗反射膜。
[表1]
对抗反射硬掩模组合物的平版印刷评价
将在制备例2、3、4、6及比较制备例样品溶液分别旋涂于覆盖有铝的硅片上，在240℃下烤60秒，形成厚度的涂膜。
在形成的各个涂膜上，涂覆KrF用光刻胶，在110℃下烤60秒，使用阿斯麦(ASML，XT:1400、NA 0.93)公司的曝光装备分别进行曝光后，利用TMAH(tetramethyl ammoniumhydroxide：四甲基氢氧化铵)2.38wt％水溶液分别显影60秒。然后，使用V-SEM分别考查90nm线与空间(line and space)图案的结果，获得了如下表2所示的结果。考查根据曝光量变化导致的EL(expose latitude：曝光宽容度)裕度(margine)和与光源的距离变动导致的DoF(depth of focus：聚集深度)裕度(margine)并记录于表2。图案评价结果，可以确认在轮廓或裕度方面的良好结果，可知满足平版图案评价要求的EL裕度和DoF裕度。
[表2]
对抗反射硬掩模组合物的蚀刻特性评价
将由制备例2、3、6及比较制备例样品溶液分别图案化的试片，利用CHF3/CF4混合气体，以PR作为掩模，对下部SiON抗反射膜(BARC)进行干法蚀刻，接着，利用O2/N2混合气体，以SiON抗反射膜作为掩模，再次进行本硬掩模的干法蚀刻。然后，利用CHF3/CF4混合气体，以硬掩模作为掩模，对氮化硅(SiN)膜质进行干法蚀刻后，针对剩下的硬掩模及有机物，进行O2灰化(ashing)及湿式(wet)除胶工序。
在硬掩模蚀刻及氮化硅蚀刻后立即利用V-SEM对各个试片分别考查剖面并将结果记录于表3。蚀刻评价结果，硬掩模蚀刻后及氮化硅蚀刻后图案模样没有出现各自的弯曲(bowing)现象且均良好，从而可以确认由蚀刻过程的耐性充分而良好的执行了氮化硅膜质的蚀刻工序。
[表3]
| 样品 | 图案模样(硬掩模蚀刻后) | 图案模样(SiN蚀刻后) |
| 制备例2 | 竖直模样 | 竖直模样 |
| 制备例3 | 竖直模样 | 竖直模样 |
| 制备例6 | 竖直模样 | 竖直模样 |
| 比较制备例 | 稍稍弯曲模样 | 弯曲模样 |
Claims (7)
1. 一种抗反射硬掩模组合物，包含：
（a）由以下述化学式1表示的聚合物或包含其的聚合物混合物；及
（b）有机溶剂，
[化学式1]
在所述式中，R1及R2分别独立地为选自由氢、C1~C10的烷基及C6~C20的芳基组成的组的任一个，R1及R2能够彼此相同或不同，
A为C6~C40的具有羟基的芳香族化合物，
m/（m+n）=0.05~0.9，
重均分子量为1,000~30,000。
2.根据权利要求1所述的抗反射硬掩模组合物，其中，
所述R1及R2中的一个为氢，另一个为分别选自下述取代基中的任一个，
。
3.根据权利要求1所述的抗反射硬掩模组合物，其中，
所述A为选自下述结构的化合物中的任一个，
。
4.根据权利要求1或2所述的抗反射硬掩模组合物，其中，
所述硬掩模组合物还包含交联剂及酸催化剂组分。
5.根据权利要求4所述的抗反射硬掩模组合物，其中，
所述硬掩模组合物由如下组成：
（a）由所述化学式1表示的聚合物或包含其的聚合物混合物1~30重量%；
（b）交联剂组分0.1~5重量%；
（c）酸催化剂0.001~0.05重量%；及
（d）作为剩余组分使用有机溶剂而达到总100重量%。
6.根据权利要求5所述的抗反射硬掩模组合物，其中，
所述交联剂为选自由氨基树脂、甘脲化合物及双环氧化合物组成的组的任一个。
7.根据权利要求5所述的抗反射硬掩模组合物，其中，
所述酸催化剂选自由对甲苯磺酸一水化物、吡啶对甲苯磺酸盐、2,4,4,6-四溴环己二烯酮、安息香甲苯磺酸酯、2-硝基苯基甲苯磺酸酯及有机磺酸的烷基酯组成的组。
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107340688A (zh) * | 2016-04-29 | 2017-11-10 | 东友精细化工有限公司 | 硬掩模用组合物 |
| CN108292098A (zh) * | 2015-12-01 | 2018-07-17 | 日产化学工业株式会社 | 包含吲哚并咔唑酚醛清漆树脂的抗蚀剂下层膜形成用组合物 |
| CN109426077A (zh) * | 2017-08-30 | 2019-03-05 | 信越化学工业株式会社 | 有机膜形成用组合物、半导体装置制造用基板、有机膜的形成方法、图案形成方法及聚合物 |
| CN109426076A (zh) * | 2017-08-28 | 2019-03-05 | 信越化学工业株式会社 | 有机膜形成用组合物、半导体装置制造用基板、有机膜的形成方法、图案形成方法及聚合物 |
| KR20210034316A (ko) * | 2019-09-20 | 2021-03-30 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
| CN116264810A (zh) * | 2021-12-14 | 2023-06-16 | 乐金显示有限公司 | 有机发光二极管和包括该有机发光二极管的有机发光显示装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100908601B1 (ko) | 2007-06-05 | 2009-07-21 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법 |
| KR100930673B1 (ko) * | 2007-12-24 | 2009-12-09 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용한재료의 패턴화 방법 |
| KR100950318B1 (ko) | 2008-05-20 | 2010-03-31 | 제일모직주식회사 | 방향족 고리 함유 중합체, 이를 포함하는 반사방지하드마스크 조성물 및 이를 이용한 재료의 패턴화 방법 |
| JP5641253B2 (ja) | 2009-06-19 | 2014-12-17 | 日産化学工業株式会社 | カルバゾールノボラック樹脂 |
| KR101413069B1 (ko) | 2011-12-30 | 2014-07-02 | 제일모직 주식회사 | 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
| KR101788091B1 (ko) * | 2014-09-30 | 2017-11-15 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물, 유기막, 및 패턴형성방법 |
| KR101770749B1 (ko) * | 2016-01-11 | 2017-08-23 | 최상준 | 반사방지용 하드마스크 조성물 |
| KR20170126750A (ko) * | 2016-05-10 | 2017-11-20 | 최상준 | 반사방지용 하드마스크 조성물 |
-
2019
- 2019-01-18 KR KR1020190006959A patent/KR102109919B1/ko active IP Right Grant
-
2020
- 2020-01-14 CN CN202010037447.1A patent/CN111458981B/zh active Active
- 2020-01-17 US US16/745,481 patent/US11493849B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108292098A (zh) * | 2015-12-01 | 2018-07-17 | 日产化学工业株式会社 | 包含吲哚并咔唑酚醛清漆树脂的抗蚀剂下层膜形成用组合物 |
| CN107340688A (zh) * | 2016-04-29 | 2017-11-10 | 东友精细化工有限公司 | 硬掩模用组合物 |
| CN109426076A (zh) * | 2017-08-28 | 2019-03-05 | 信越化学工业株式会社 | 有机膜形成用组合物、半导体装置制造用基板、有机膜的形成方法、图案形成方法及聚合物 |
| CN109426077A (zh) * | 2017-08-30 | 2019-03-05 | 信越化学工业株式会社 | 有机膜形成用组合物、半导体装置制造用基板、有机膜的形成方法、图案形成方法及聚合物 |
| KR20210034316A (ko) * | 2019-09-20 | 2021-03-30 | 동우 화인켐 주식회사 | 하드마스크용 조성물 |
| CN116264810A (zh) * | 2021-12-14 | 2023-06-16 | 乐金显示有限公司 | 有机发光二极管和包括该有机发光二极管的有机发光显示装置 |
Non-Patent Citations (1)
| Title |
|---|
| Three-Dimensional Charge Transport in Organic Semiconductor Single Crystals;Tao He，等;advanced material;第24卷(第16期);2171-2175 * |
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