JP4372939B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4372939B2
JP4372939B2 JP2000032888A JP2000032888A JP4372939B2 JP 4372939 B2 JP4372939 B2 JP 4372939B2 JP 2000032888 A JP2000032888 A JP 2000032888A JP 2000032888 A JP2000032888 A JP 2000032888A JP 4372939 B2 JP4372939 B2 JP 4372939B2
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Japan
Prior art keywords
film
forming
insulating film
semiconductor layer
tft
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Expired - Fee Related
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JP2000032888A
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English (en)
Japanese (ja)
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JP2000299468A5 (enrdf_load_stackoverflow
JP2000299468A (ja
Inventor
舜平 山崎
幸夫 田中
潤 小山
光明 納
智史 村上
英人 大沼
悦子 藤本
英人 北角
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000032888A priority Critical patent/JP4372939B2/ja
Publication of JP2000299468A publication Critical patent/JP2000299468A/ja
Publication of JP2000299468A5 publication Critical patent/JP2000299468A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000032888A 1999-02-12 2000-02-10 半導体装置の作製方法 Expired - Fee Related JP4372939B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000032888A JP4372939B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3366799 1999-02-12
JP11-33667 1999-02-12
JP2000032888A JP4372939B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006038853A Division JP4860293B2 (ja) 1999-02-12 2006-02-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000299468A JP2000299468A (ja) 2000-10-24
JP2000299468A5 JP2000299468A5 (enrdf_load_stackoverflow) 2006-04-27
JP4372939B2 true JP4372939B2 (ja) 2009-11-25

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Family Applications (1)

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JP2000032888A Expired - Fee Related JP4372939B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

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JP (1) JP4372939B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184710A (ja) * 2000-12-18 2002-06-28 Sony Corp 半導体層のドーピング方法、薄膜半導体素子の製造方法、及び薄膜半導体素子
US7294517B2 (en) 2001-06-18 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of fabricating the same
JP4798907B2 (ja) 2001-09-26 2011-10-19 株式会社半導体エネルギー研究所 半導体装置
JP2006243753A (ja) * 2006-05-19 2006-09-14 Seiko Epson Corp 基板装置、電気光学装置及び電子機器
JP5153921B2 (ja) * 2011-06-27 2013-02-27 株式会社半導体エネルギー研究所 表示装置、及び携帯情報端末
US20130187150A1 (en) * 2012-01-20 2013-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102282866B1 (ko) * 2012-07-20 2021-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치를 포함하는 전자 장치

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JP2000299468A (ja) 2000-10-24

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