JP4363418B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4363418B2 JP4363418B2 JP2006172225A JP2006172225A JP4363418B2 JP 4363418 B2 JP4363418 B2 JP 4363418B2 JP 2006172225 A JP2006172225 A JP 2006172225A JP 2006172225 A JP2006172225 A JP 2006172225A JP 4363418 B2 JP4363418 B2 JP 4363418B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims description 52
- 229910000679 solder Inorganic materials 0.000 abstract description 35
- 238000005520 cutting process Methods 0.000 abstract description 3
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 73
- 239000004020 conductor Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 22
- 230000017525 heat dissipation Effects 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
本形態の支持体とは、半導体素子を配置する搭載部を有する主面と、その主面の反対側に設けられる背面と、を有し、光反射や配線を目的とした金属部材が主面や背面に配置されたものである。
本形態における半導体素子は、発光素子、受光素子、およびそれらの半導体素子を過電圧による破壊から守る保護素子(例えば、ツェナーダイオードやコンデンサー)、あるいはそれらを組み合わせたものとすることができる。ここでは、半導体素子の一例として、発光素子(LEDチップ)について説明する。LEDチップを構成する半導体発光素子としては、ZnSeやGaNなど種々の半導体を使用したものを挙げることができるが、蛍光物質を有する発光装置とする場合には、その蛍光物質を効率良く励起できる短波長が発光可能な窒化物半導体(InXAlYGa1−X−YN、0≦X、0≦Y、X+Y≦1)が好適に挙げられる。半導体層の材料やその混晶度によって発光波長を種々選択することができる。
本形態における被覆部材とは、支持体に載置された半導体素子や導電性ワイヤなどを塵芥、水分や外力などから保護する部材である。被覆部材の材料として、例えば、シリコーン樹脂、エポキシ樹脂あるいはユリア樹脂が挙げられる。被覆部材は、所望に応じて着色剤、光安定化剤、蛍光物質など種々のものを含有させることもできる。具体的には、発光素子の発光波長や受光波長に応じて、不要な波長をカットする目的で顔料や染料などの着色剤を含有させる。
101a、101b・・・切欠部
102a、102b、102c、102d・・・角部
103・・・凹部の開口部
104a、104b、104c・・・セラミックスグリーンシート
201a・・・導体配線の第一の部位
201b・・・第一の延伸部
202a・・・導体配線の第二の部位
202b・・・第二の延伸部
301・・・LEDチップ
302・・・ツェナーダイオード
303・・・導電性ワイヤ
401・・・第一の埋設部
402・・・第二の埋設部
403・・・第三の埋設部
404・・・第四の埋設部
405・・・第五の埋設部
406・・・第六の埋設部
407・・・開口部の内縁
408・・・搭載部
a・・・第一の辺
b・・・第二の辺
c・・・第三の辺
Claims (3)
- 半導体素子と、その半導体素子を配置する支持体とを備え、その支持体は、金属部材と、その金属部材を配置する絶縁性基板と、から構成され、前記絶縁性基板は、前記半導体素子が配置される搭載部を有する主面と、その主面に向かい合う背面と、その背面と前記主面とを接続する複数の側面と、それらの隣り合う側面により設けられた複数の角部と、を有する半導体装置であって、
前記支持体は、隣り合う角部の間に、前記絶縁性基板の一部が前記側面から前記背面にかけて切り欠かれて設けられた直方体状の切欠部を有しており、
前記背面を平面視して、前記金属部材は、前記切欠部の壁面から前記背面の中心方向に延設されており、その金属部材の前記背面の中心側の外縁が、その略矩形の角を面取りした形状とされ、前記切欠部の底面は、前記切欠部の壁面に配置された金属部材によって被覆されることなく前記絶縁性基板の表面が全面に露出されており、
前記角部は、前記金属部材に被覆されることなく前記絶縁性基板の表面が露出された内壁面からなる凹部を有することを特徴とする半導体装置。 - 前記外縁が面取りされた形状は、直線である請求項1に記載の半導体装置。
- 前記切欠部は、前記支持体の互いに向かい合う一対の側面に、前記背面の中心に対して略対称に一対設けられており、それぞれの切欠部から延設された金属部材は、前記背面の中心に対して略対称な外形を有する請求項1または2に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006172225A JP4363418B2 (ja) | 2006-06-22 | 2006-06-22 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006172225A JP4363418B2 (ja) | 2006-06-22 | 2006-06-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008004721A JP2008004721A (ja) | 2008-01-10 |
JP4363418B2 true JP4363418B2 (ja) | 2009-11-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006172225A Active JP4363418B2 (ja) | 2006-06-22 | 2006-06-22 | 半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JP4363418B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009239116A (ja) * | 2008-03-27 | 2009-10-15 | Sharp Corp | 発光装置 |
JP2013219071A (ja) * | 2012-04-04 | 2013-10-24 | Kyocera Corp | 発光素子搭載用部品および発光装置 |
JP2014086631A (ja) * | 2012-10-25 | 2014-05-12 | Kyocera Corp | 発光素子用パッケージおよび発光装置 |
JP2018113293A (ja) * | 2017-01-10 | 2018-07-19 | セイコーエプソン株式会社 | 発光装置、生体情報測定装置および発光装置の製造方法 |
JP7145739B2 (ja) * | 2018-11-28 | 2022-10-03 | 京セラ株式会社 | 配線基板、電子装置および電子モジュール |
JP2023121966A (ja) * | 2022-02-22 | 2023-09-01 | 信越化学工業株式会社 | 熱伝導性積層絶縁基板 |
-
2006
- 2006-06-22 JP JP2006172225A patent/JP4363418B2/ja active Active
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JP2008004721A (ja) | 2008-01-10 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |