JP4355968B2 - 加工物にイオン注入するためのイオン注入装置 - Google Patents

加工物にイオン注入するためのイオン注入装置 Download PDF

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Publication number
JP4355968B2
JP4355968B2 JP52953197A JP52953197A JP4355968B2 JP 4355968 B2 JP4355968 B2 JP 4355968B2 JP 52953197 A JP52953197 A JP 52953197A JP 52953197 A JP52953197 A JP 52953197A JP 4355968 B2 JP4355968 B2 JP 4355968B2
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Prior art keywords
load lock
workpiece
chamber
ion
panel
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP52953197A
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English (en)
Japanese (ja)
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JP2000504876A5 (enExample
JP2000504876A (ja
Inventor
ピーター エッチ． ローズ，
ジュリアン ジー． ブレイク，
アダム エイ． ブレイラブ，
ゾーングミン ヤング，
リチャード エフ． マックレイ，
ジェイ． ヒューエイ，バーバラ
Original Assignee
アクセリス テクノロジーズ インコーポレーテッド
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Publication of JP2000504876A5 publication Critical patent/JP2000504876A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3411—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/184—Vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/204—Means for introducing and/or outputting objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
JP52953197A 1996-02-16 1997-02-14 加工物にイオン注入するためのイオン注入装置 Expired - Fee Related JP4355968B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US60198396A 1996-02-16 1996-02-16
US08/601,983 1996-02-16
US08/756,133 1996-11-26
US08/756,133 US5793050A (en) 1996-02-16 1996-11-26 Ion implantation system for implanting workpieces
PCT/US1997/002411 WO1997030470A1 (en) 1996-02-16 1997-02-14 Ion implantation system for implanting workpieces

Publications (3)

Publication Number Publication Date
JP2000504876A JP2000504876A (ja) 2000-04-18
JP2000504876A5 JP2000504876A5 (enExample) 2004-11-04
JP4355968B2 true JP4355968B2 (ja) 2009-11-04

Family

ID=27084012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52953197A Expired - Fee Related JP4355968B2 (ja) 1996-02-16 1997-02-14 加工物にイオン注入するためのイオン注入装置

Country Status (6)

Country Link
US (2) US5793050A (enExample)
EP (1) EP0880797A1 (enExample)
JP (1) JP4355968B2 (enExample)
KR (1) KR100474875B1 (enExample)
AU (1) AU1960097A (enExample)
WO (1) WO1997030470A1 (enExample)

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JP3239779B2 (ja) * 1996-10-29 2001-12-17 日新電機株式会社 基板処理装置および基板処理方法
JP3286240B2 (ja) * 1998-02-09 2002-05-27 日本エー・エス・エム株式会社 半導体処理用ロードロック装置及び方法
KR100296651B1 (ko) * 1998-07-09 2001-10-26 윤종용 반도체진공설비및이를이용하는방법
US6161311A (en) * 1998-07-10 2000-12-19 Asm America, Inc. System and method for reducing particles in epitaxial reactors
AU6763000A (en) * 1999-08-11 2001-03-05 Multilevel Metals, Inc. Load lock system for foups
US6726429B2 (en) * 2002-02-19 2004-04-27 Vertical Solutions, Inc. Local store for a wafer processing station
US6878240B2 (en) * 2002-06-28 2005-04-12 International Business Machines Corporation Apparatus and method for obtaining symmetrical junctions between a read sensor and hard bias layers
US20050110292A1 (en) * 2002-11-26 2005-05-26 Axcelis Technologies, Inc. Ceramic end effector for micro circuit manufacturing
US20040100110A1 (en) * 2002-11-26 2004-05-27 Axcelis Technologies, Inc. Ceramic end effector for micro circuit manufacturing
US7207766B2 (en) * 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
JP2005174871A (ja) * 2003-12-15 2005-06-30 Mitsui Eng & Shipbuild Co Ltd イオン注入装置
JP2005174870A (ja) * 2003-12-15 2005-06-30 Mitsui Eng & Shipbuild Co Ltd イオン注入方法及びイオン注入装置
US6987272B2 (en) * 2004-03-05 2006-01-17 Axcelis Technologies, Inc. Work piece transfer system for an ion beam implanter
US7575220B2 (en) * 2004-06-14 2009-08-18 Applied Materials, Inc. Curved slit valve door
JP2006032930A (ja) * 2004-06-14 2006-02-02 Semiconductor Energy Lab Co Ltd ドーピング装置
US7497414B2 (en) * 2004-06-14 2009-03-03 Applied Materials, Inc. Curved slit valve door with flexible coupling
US20070006936A1 (en) * 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
US7845891B2 (en) 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
KR20070096669A (ko) * 2006-03-27 2007-10-02 브룩스오토메이션아시아(주) 로드락 챔버
US7547897B2 (en) * 2006-05-26 2009-06-16 Cree, Inc. High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
US8124907B2 (en) 2006-08-04 2012-02-28 Applied Materials, Inc. Load lock chamber with decoupled slit valve door seal compartment
US8450193B2 (en) * 2006-08-15 2013-05-28 Varian Semiconductor Equipment Associates, Inc. Techniques for temperature-controlled ion implantation
US7935942B2 (en) * 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
JP2013532354A (ja) 2010-05-28 2013-08-15 アクセリス テクノロジーズ， インコーポレイテッド 冷却されるイオン注入システムのための加熱回転式のシールおよび軸受け
US8481969B2 (en) 2010-06-04 2013-07-09 Axcelis Technologies, Inc. Effective algorithm for warming a twist axis for cold ion implantations
US9711324B2 (en) * 2012-05-31 2017-07-18 Axcelis Technologies, Inc. Inert atmospheric pressure pre-chill and post-heat
CN108780766B (zh) * 2016-03-08 2022-03-04 瑞士艾发科技 用于衬底脱气的室
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Also Published As

Publication number Publication date
KR100474875B1 (ko) 2005-07-07
US6025602A (en) 2000-02-15
WO1997030470A1 (en) 1997-08-21
EP0880797A1 (en) 1998-12-02
JP2000504876A (ja) 2000-04-18
AU1960097A (en) 1997-09-02
US5793050A (en) 1998-08-11
KR19990082589A (ko) 1999-11-25

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