JP4355691B2 - 液浸リソグラフィシステム内の運動によって生じる外乱を低減させるシステムおよび方法 - Google Patents
液浸リソグラフィシステム内の運動によって生じる外乱を低減させるシステムおよび方法 Download PDFInfo
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- JP4355691B2 JP4355691B2 JP2005248267A JP2005248267A JP4355691B2 JP 4355691 B2 JP4355691 B2 JP 4355691B2 JP 2005248267 A JP2005248267 A JP 2005248267A JP 2005248267 A JP2005248267 A JP 2005248267A JP 4355691 B2 JP4355691 B2 JP 4355691B2
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- Prior art keywords
- substrate
- immersion
- optical
- optical element
- photolithography system
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本発明の様々な実施形態が上述されているが、これらの実施形態は、限定ではなく例としてのみ示されていることが理解されるべきである。本発明の思想および範囲から逸脱することなく形式および細部における様々な変更を行い得ることが当業者に対し明らかであろう。すなわち、本発明の広さおよび範囲は、上述の実施例のいずれによっても制限されるべきではなく、以降の請求項および請求項と同等のものに基づいてのみ定義されるべきである。
Claims (17)
- 液浸ホトリソグラフィシステムであって、
少なくとも1つの光学素子と、
基板と、
前記少なくとも1つの光学素子と基板の間にある浸液量を含み、
前記少なくとも1つの光学素子、基板および浸液量は、イメージングの間、一致して動くように構成されており、
前記浸液量は焦点を調整するために変化することを特徴とする液浸ホトリソグラフィシステム。 - 前記浸液量は、前記少なくとも1つの光学素子と基板の間に、浸液の表面張力及びメニスカスによって保持されている、請求項1記載のホトリソグラフィシステム。
- さらに、軸方向変位を補償するために補償光学系を含む、請求項1記載のホトリソグラフィシステム。
- 前記補償光学系は少なくとも1つのレンズを含み、
当該レンズは移動、回転または傾斜のうちの少なくとも1つを行うことができる、請求項3記載のホトリソグラフィシステム。 - 前記補償光学系は投影光学系の一部である、請求項4記載のホトリソグラフィシステム。
- 前記少なくとも1つの光学素子は光パワーを有するフルフィールドレンズアレイである、請求項1記載のホトリソグラフィシステム。
- 前記少なくとも1つの光学素子は光パワーを有するサブフィールドレンズアレイである、請求項1記載のホトリソグラフィシステム。
- 前記少なくとも1つの光学素子は光パワーを有していない、請求項1記載のホトリソグラフィシステム。
- 前記少なくとも1つの光学素子は、投影光学系の出口側レンズである、請求項1記載のホトリソグラフィシステム。
- 前記浸液量は、表面張力によって前記基板の表面上にとどまる、請求項1記載のホトリソグラフィシステム。
- 前記少なくとも1つの光学素子の表面は、浸液のメニスカスと接触している、請求項10記載のホトリソグラフィシステム。
- 前記浸液量は、表面張力によって前記少なくとも1つの光学素子の表面上にとどまる、請求項1記載のホトリソグラフィシステム。
- 前記基板の表面は浸液のメニスカスと接触している、請求項12記載のホトリソグラフィシステム。
- 基板上にパターンをプリントする方法であって、
(a)少なくとも1つの光学素子、浸液量および基板を単一ユニットに結合し、
(b)パターンを搬送する露光ビームに関連して前記単一ユニットを動かし、
(c)露光ビームによって前記単一ユニットを通じて前記基板を露光し、
前記ステップ(a)は、光パワーを有する少なくとも1つの素子と浸液量と基板を単一ユニットに結合することを含み、
(d)解像度と露光ビームの焦点深度のうちの少なくとも1つを修正するために、前記浸液量を調整する、ことをさらに含む
ことを特徴とする、基板上にパターンをプリントする方法。 - (e)露光ビームに関した前記単一ユニットの動きを補償するために、少なくとも1つの光学補償素子を動かす、ことをさらに含む、請求項14記載の方法。
- 前記ステップ(e)における動きは、移動、傾斜または回転の少なくとも1つを含む、請求項15記載の方法。
- 基板上にパターンをプリントする方法であって、
(a)少なくとも1つの光学素子、浸液量および基板を単一ユニットに結合し、
(b)パターンを搬送する露光ビームに関連して前記単一ユニットを動かし、
(c)露光ビームによって前記単一ユニットを通じて前記基板を露光し、
前記ステップ(a)は、光パワーを有していない少なくとも1つの素子と浸液量と基板を単一ユニットに結合することを含み、
(d)露光ビームの焦点深度を修正するために、前記浸液量を調整する、ことをさらに含む
ことを特徴とする、基板上にパターンをプリントする方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/927,394 US20060044533A1 (en) | 2004-08-27 | 2004-08-27 | System and method for reducing disturbances caused by movement in an immersion lithography system |
Publications (2)
Publication Number | Publication Date |
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JP2006066921A JP2006066921A (ja) | 2006-03-09 |
JP4355691B2 true JP4355691B2 (ja) | 2009-11-04 |
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JP2005248267A Expired - Fee Related JP4355691B2 (ja) | 2004-08-27 | 2005-08-29 | 液浸リソグラフィシステム内の運動によって生じる外乱を低減させるシステムおよび方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US20060044533A1 (ja) |
EP (1) | EP1630616A3 (ja) |
JP (1) | JP4355691B2 (ja) |
KR (1) | KR100728844B1 (ja) |
CN (1) | CN100485528C (ja) |
SG (1) | SG120300A1 (ja) |
TW (1) | TWI308675B (ja) |
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CN100592210C (zh) | 2004-02-13 | 2010-02-24 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
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JP2008517473A (ja) * | 2004-10-22 | 2008-05-22 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィ用の投影露光装置 |
JP2007194484A (ja) * | 2006-01-20 | 2007-08-02 | Toshiba Corp | 液浸露光方法 |
CN100456138C (zh) * | 2006-06-13 | 2009-01-28 | 上海微电子装备有限公司 | 浸没式光刻机浸液流场维持系统 |
WO2009061196A1 (en) * | 2007-11-08 | 2009-05-14 | Asml Netherlands B.V. | Lithographic projection apparatus and method of compensating perturbation factors |
CN103513324A (zh) * | 2012-06-25 | 2014-01-15 | 鸿富锦精密工业(深圳)有限公司 | 光纤装置 |
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-
2004
- 2004-08-27 US US10/927,394 patent/US20060044533A1/en not_active Abandoned
-
2005
- 2005-08-15 TW TW094127753A patent/TWI308675B/zh active
- 2005-08-24 EP EP05018430A patent/EP1630616A3/en not_active Withdrawn
- 2005-08-26 KR KR1020050078892A patent/KR100728844B1/ko not_active IP Right Cessation
- 2005-08-26 CN CNB2005100967186A patent/CN100485528C/zh not_active Expired - Fee Related
- 2005-08-26 SG SG200505493A patent/SG120300A1/en unknown
- 2005-08-29 JP JP2005248267A patent/JP4355691B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-29 US US11/693,525 patent/US20070165201A1/en not_active Abandoned
- 2007-03-29 US US11/693,517 patent/US20070165200A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR100728844B1 (ko) | 2007-06-14 |
EP1630616A2 (en) | 2006-03-01 |
TWI308675B (en) | 2009-04-11 |
EP1630616A3 (en) | 2007-10-31 |
JP2006066921A (ja) | 2006-03-09 |
CN1740916A (zh) | 2006-03-01 |
US20070165201A1 (en) | 2007-07-19 |
SG120300A1 (en) | 2006-03-28 |
KR20060050711A (ko) | 2006-05-19 |
CN100485528C (zh) | 2009-05-06 |
TW200608155A (en) | 2006-03-01 |
US20070165200A1 (en) | 2007-07-19 |
US20060044533A1 (en) | 2006-03-02 |
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