JP4353167B2 - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor light emitting device having a semiconductor laminated structure, and more particularly to a semiconductor light emitting device bonded to a support and a method for manufacturing the same.

A light-emitting element using a semiconductor is one in which an n-type semiconductor layer or a p-type semiconductor layer having a semiconductor multilayer structure is stacked on a substrate, electrodes are provided on each conductive type layer, and light is emitted by energizing the electrodes. . In addition, there is also a device in which a semiconductor element structure formed on a substrate in this manner is attached to a support, and the support and the semiconductor laminated structure are used as a light emitting element (for example, FIG. 2 of Patent Document 1). .
JP 2003-31858 A

  However, the structure of the conventional light-emitting element cannot extract sufficient light-emitting characteristics, and the light-emitting element bonded to the support has sufficient characteristics suitable for the light-emitting element due to manufacturing restrictions. Could not be formed.

  Specifically, in a semiconductor multilayer structure to be bonded to a support, an electrode provided in the semiconductor multilayer structure before bonding can be alloyed by heat treatment or the like after electrode formation. In addition, the heat resistance, reliability during operation of the light emitting element, for example, the heat resistance of the element, adhesion, and the like can be improved. However, the electrode provided in the semiconductor laminated structure after bonding with the support is heat-treated so that the heat resistance of the bonding member, for example, when the bonding strength is reduced due to alteration or deformation of the bonding member due to heat treatment, etc. Sufficient heat treatment cannot be performed due to limitations such as the need to lower the temperature. For this reason, it has been difficult to obtain an electrode provided in the semiconductor multilayer structure after the support is bonded to one having sufficient characteristics.

  Further, as another problem, the electrode structure and electrode arrangement in the semiconductor multilayer structure shield light emission depending on the material of the electrode, and thus the structure needs to be highly designed. On the other hand, if there is a difference in the mobility of carriers in each conductive type layer made of semiconductor, the arrangement of the electrodes formed in each conductive type layer has an important influence on the control of the carrier and hence the luminous efficiency. Will be given. For example, when the area of the light emitting element is increased, even if the area of the light emitting structure portion is larger than the area of the element, some light emitting structure portions do not emit sufficient light due to the electrode structure. In some cases, the light output cannot be improved according to the increase in the element area. Thus, when the area of the light emitting element, the light emitting structure, and the number of light emitting structure portions are increased, problems such as uniformity of light emission occur, and light loss in a portion with low light emission efficiency also becomes a problem. Such an electrode structure and element structure design are important.

  In addition, when the electrode is used as a heat dissipation path, it is necessary to design in consideration of how to arrange the lead-out part for external connection of the electrode and the heat dissipation path from the semiconductor multilayer structure. In order to obtain a semiconductor laminated structure and an electrode structure, a very advanced design is required.

  Further, as a problem in a semiconductor laminated structure having a structure bonded to a support, when an electrode of a light emitting element is provided between the support and the semiconductor laminated structure, an adhesive member thereof, or an electrode and an adhesive member of the semiconductor laminated structure Adhesiveness with the insulating film that insulates them from each other, their in-plane arrangement, and laminated structure are important, and heat treatment of the electrode and heat resistance of the adhesive member need to be considered in the manufacturing process. Further, in order to obtain sufficient reliability in terms of adhesive strength and the like for each member used in the light emitting element, it is important to design a heat dissipation path from the semiconductor multilayer structure to the support.

The present invention solves the above-described problems. In particular, in a semiconductor light-emitting device in which a semiconductor multilayer structure is bonded onto a support, it provides a suitable electrode structure and has excellent characteristics. Is intended to provide.
Specifically, in the semiconductor light emitting device according to the present invention, with respect to the electrode provided in the semiconductor stacked structure, a part of one main surface of the electrode is brought into contact with the semiconductor stacked structure so as to be electrically connected, and the other By exposing the portion for external connection, the above-described various problems are solved.

That is, a semiconductor multilayer structure including a conductive type different first semiconductor layer and the second semiconductor layer from each other, a first electrode connected to said first semiconductor layer, said at the first electrode and the same side and a second electrode connected to the second semiconductor layer, wherein the first electrode and the second electrode side of the semiconductor multilayer structure is a semiconductor light-emitting element bonded to a support, wherein the first electrode and the By providing an adhesive member between two electrodes and the support, the support and the semiconductor laminated structure are bonded, and the first electrode has the first semiconductor layer on one main surface. It has the part which touches so that it may electrically conduct, and an external connection part, It is characterized by the above-mentioned.

In the semiconductor light emitting device according to the present invention configured as described above, the electrode provided in the semiconductor layer constituting the semiconductor multilayer structure is in contact with the semiconductor multilayer structure and performs a predetermined function, and the external The external connection part for connecting to a power supply etc. has on the same surface, and has the following effects.
With the above structure, the degree of freedom of electrode arrangement is increased, and the reliability of the electrode can be increased because the external connection portion can be exposed after the electrode is heat-treated after the electrode is formed in the semiconductor multilayer structure. .

  Further, on one main surface of the electrode, a part of the electrode is a semiconductor contact part that is in contact with the electrode forming part of the semiconductor lamination part, and the other part is an external connection part, whereby the semiconductor contact part and the external connection part are Since it is not necessary to provide a complicated wiring electrode for connection, man-hours related to electrode formation can be reduced, and the structure is simplified, so that the reliability of the electrode is improved. Moreover, since the external connection portion is formed during the semiconductor manufacturing process, it can be formed with extremely high accuracy and can be formed with a minimum area.

  In the semiconductor light emitting device according to the present invention, a pad electrode can be provided in the external connection portion for connection with an external wiring member such as a wire or a metal wiring. As a result, a member excellent in adhesiveness and adhesive strength with the external wiring can be used as the pad electrode material, so that a reliable connection with the external wiring can be ensured.

  In the present invention, the semiconductor stacked structure includes a first conductive type first semiconductor layer and a second conductive type second semiconductor layer, and a first electrode is formed in the first semiconductor layer. In the case where the second electrode is formed on the second semiconductor layer, both the first electrode and the second electrode can be formed as electrodes having a semiconductor contact portion and an external connection portion on the same surface. Alternatively, only the first electrode may be an electrode having a semiconductor contact portion and an external connection portion on the same surface, and the second electrode may be configured differently.

  That is, only the first electrode is an electrode having a semiconductor contact portion and an external connection portion on the same surface side, and the second electrode is, for example, electrically connected to the second semiconductor layer on one main surface thereof. The other main surface side of the second electrode may be used as an external connection portion of the second electrode.

Similarly to the first electrode, the second electrode is configured such that a part of the main surface of the second electrode is a semiconductor contact part and the other part is an external connection part, whereby the external connection part of the first electrode and the second electrode The first electrode and the second electrode can be provided so that the external connection portion is in the same direction, and for example, it is possible to connect by wire bonding or the like from the same direction (see, for example, FIG. 9).
Thereby, with the electrode structure layer on which the first electrode and the second electrode are formed as a boundary, the one side can be a support body that is a mounting surface side, and the other side can be a light emitting unit provided with a semiconductor multilayer structure, A suitable arrangement can be realized.

  Further, when the second electrode is different from the first electrode and has one main surface serving as a semiconductor contact portion and the other main surface serving as an external connection portion, for example, when mounting a semiconductor light emitting element In addition, since the external connection portion of the second electrode is connected to the mounting substrate so that the external connection portion of the first electrode can be connected from the opposite surface, three-dimensional wiring is possible and higher density is achieved. A wiring structure that can be mounted can be obtained (see, for example, FIG. 8). Further, an element structure capable of efficiently controlling the light emission side and the heat dissipation path is obtained.

  In addition, when the first and second electrodes are formed so that the first and second electrode forming surfaces of the element structure face each other and the element structure is sandwiched between the first and second electrodes, Since the structure can be arranged on the same surface side of the light emitting element, the light emitting element can be an external wiring on the same surface side, and the second electrode can be provided with an external connection portion on the upper surface of the electrode in the semiconductor laminated structure, A light-emitting element having a structure advantageous for a light-emitting element having a small mounting area and packaging density can be obtained.

Also, the first electrode and the second electrode are formed on the same surface side (electrode formation surface side) of the semiconductor multilayer structure, and the first electrode has a semiconductor contact portion and an external connection portion on one main surface thereof When the second electrode has an electrode structure having a semiconductor contact portion on one main surface and an external connection portion on the other main surface, the second electrode has a structure other than the electrode formation surface side of the semiconductor multilayer structure. Since the surface is not covered with the electrode, the light emitted from the semiconductor stacked structure can be emitted from a surface other than the electrode formation surface side so as not to be blocked by the electrode.
In the light emitting device of the present invention, in the structure in which the semiconductor multilayer structure is bonded to the support such as the support, as described above, the first electrode and the second electrode are interposed between the support and the semiconductor multilayer structure. By arranging the above, light can be efficiently extracted from the exposed surface of the semiconductor multilayer structure other than the bonding surface.

  In the case where the semiconductor multilayer structure is an element structure having a plurality of separated partial electrodes, a conductive member for connecting each partial electrode can be provided between the support and the semiconductor multilayer structure. As a result, various structures can be adopted as the semiconductor multilayer structure, and furthermore, since the semiconductor contact portion and the external connection portion are provided on the same surface side, the design flexibility is high. A conductive member for connecting the partial electrode to the structure side and the support side can be easily provided. Specifically, in the case of having the first electrode and the second electrode having a partial electrode on the semiconductor multilayer structure, an insulating film is provided between the first and second electrodes, and on the bonding side of the support, The conductive member that connects the partial electrodes to each other can be formed in a larger area than the formation surface of the entire partial electrodes of the semiconductor multilayer structure. In addition, since an adhesive member for bonding the support and the semiconductor laminated structure also serves as a conductive member for connecting the partial electrodes, a more efficient element structure can be obtained.

  In addition, the method for manufacturing a light-emitting element according to the present invention solves the problems in manufacturing the element of the conventional example. Specifically, after an electrode connected to the semiconductor multilayer structure is formed on one surface of the semiconductor multilayer structure, a part of the semiconductor multilayer structure is exposed until a part of the electrode formed in the semiconductor multilayer structure is exposed. The electrode surface that is removed and exposed is used as an electrode portion for external connection.

  Specifically, after a semiconductor multilayer structure is formed with a semiconductor, an electrode is provided on the electrode formation surface of the semiconductor multilayer structure, and then the semiconductor multilayer structure is exposed in order to expose the electrode surface on the semiconductor multilayer structure side for external connection. A light emitting element is manufactured by a process of removing a part of the structure. By such a method, the conventional problem is solved.

  That is, since the external connection electrode is normally provided as a wiring electrode on the support side, it is necessary to form a relatively large external connection wiring electrode in consideration of the alignment accuracy at the time of bonding. However, in the manufacturing method of the present invention, since the external connection electrodes are first formed in the semiconductor multilayer structure by semiconductor processing technology, the external connection portion and the semiconductor contact portion are independent of the alignment accuracy at the time of bonding. A predetermined position is secured. Therefore, since the external connection portion can be provided with a remarkably superior accuracy as compared with the conventional example, a high-precision and high-density element structure can be obtained, and high-density element mounting is possible.

In addition, in the case of bonding to a support, since the electrodes are formed in the semiconductor laminated structure before the bonding, heat treatment of the formed electrodes is not limited by the heat resistance of the adhesive member used at the time of bonding. Is possible. Also, heat treatment of other elements, for example, reduction of resistance of p-type nitride semiconductor by thermal annealing, formation of p-type semiconductor, etc. should be performed without being limited by the heat resistance of the adhesive member used at the time of bonding. Can do. As described above, various steps can be performed before bonding, even if the first and second electrodes are provided in advance in the semiconductor multilayer structure, at least one of the electrodes is bonded to the support. This is because an external connection portion can be provided by subsequent semiconductor processing, and a manufacturing process similar to that of a light-emitting element that is not attached to a support can be performed.
Here, when a growth substrate that is easy to process such as etching is used, for example, a semiconductor substrate such as a GaN substrate can be removed together with the growth substrate in the partial removal of the semiconductor in the electrode exposure step. . On the other hand, a growth substrate such as a sapphire substrate that is difficult to etch may be used as the growth substrate. In that case, in the manufacturing method of the present invention, it is preferable that the semiconductor multilayer structure is bonded to the support and the growth substrate having the semiconductor multilayer structure is removed.
As shown in FIG. 13E, when the semiconductor layer is removed in the electrode exposure step and the wafer having a plurality of element regions is manufactured as shown in FIG. 13, the element structure portions 13 that become the element regions are separated from each other. Can be made.

In the method for manufacturing a light-emitting element of the present invention, a pad electrode suitable for external wiring can be provided in an external connection portion of the provided electrode after an element processing step such as an electrode exposure step.
Furthermore, in the light emitting device of the present invention, as described above, an insulating film that insulates between the electrodes and a member for bonding to the support are formed on the semiconductor multilayer structure side, and then the support is attached. It is possible to adopt a method that goes through a matching step, and each member can be formed with high accuracy. In addition, since an insulating film is formed, an adhesive member that covers, for example, almost the entire surface of the element structure can be provided so as to overlap the two electrode formation surfaces of the element structure, thereby improving the adhesion to the support. Can do.

In the present invention, by providing a part of the electrode provided on the semiconductor laminated structure side as an external connection electrode, an element structure having a high-density electrode structure can be realized and can be formed with high accuracy. Thus, various electrode structures and semiconductor laminated structures can be realized, and various light-emitting elements can be provided depending on applications.
In the case of a light emitting device in which a semiconductor multilayer structure is bonded to a support, the first and second electrodes of the semiconductor multilayer structure can be arranged with high density and high precision on the bonding surface side, and the bonding accuracy is also high. A light-emitting element having a high level can be manufactured, and even a light-emitting element having a complicated structure can be manufactured with a high yield.

  Hereinafter, the light emitting device of the present invention will be described in detail with respect to the configuration of the present invention and elements constituting the same, using the embodiments and examples. However, the present invention is limited to the following examples and embodiments. Is not to be done. The contents described in some examples and embodiments may be used in other examples and embodiments. The drawings described in the examples and embodiments may be partially exaggerated in order to help understanding of the present invention.

(Semiconductor laminated structure)
The semiconductor multilayer structure of the present invention can be configured by forming a predetermined conductivity type layer made of a desired semiconductor material on a growth substrate 1 on which a semiconductor is grown.
As a material constituting the semiconductor multilayer structure according to the present invention, for example, a nitride semiconductor material can be used. As the nitride semiconductor material is not particularly limited, specifically, GaN, AlN, or InN, or a group III-V nitride semiconductor is a mixed crystal thereof _{(In α Al β Ga 1-} α-β N , 0 ≦ α, 0 ≦ β, α + β ≦ 1), and in addition to this, a part or all of B is used as a group III element, or a part of N is used as a group V element. Alternatively, a mixed crystal substituted with As, Sb, or the like may be used.

  Examples of other semiconductor materials that can be used in the light emitting device of the present invention include GaAs-based materials such as AlGaAs and InGaAs, InP-based materials such as AlGaInP, and other III-V groups such as InGaAsP which is a mixed crystal thereof. A compound semiconductor is mentioned. The nitride semiconductor is described in the examples and embodiments of the present invention, but the present invention is not limited to this.

  The semiconductor stacked structure is vapor phase growth such as MOVPE (metal organic vapor phase epitaxy), HDVPE (halide vapor phase epitaxy), MBE (molecular beam vapor phase epitaxy), MOMBE (organic metal molecular vapor phase epitaxy). A semiconductor device such as a nitride semiconductor can be grown as an n-type layer, a p-type layer, or the like on a substrate using an apparatus. A desired semiconductor multilayer structure can be formed using such various materials and growth methods.

As a specific semiconductor stacked structure, for example, on a sapphire substrate of a semiconductor growth substrate,
A low-temperature growth buffer layer of GaN (non-doped) with a film thickness of 20 nm, a first underlayer of GaN (non-doped) with a film thickness of 5 μm, and a composition gradient of Al mixed crystal from 0 to 0.07, and Si from 0 to 1 A thickness gradient of 0.4 μm and a composition concentration gradient (AlGaN) layer as a second underlayer with a concentration gradient up to × 10 ¹⁹ / cm ³ are formed as an underlayer of the element structure,
An n-type Al _0.07 Ga _0.93 N doped with Si at 1 × 10 ¹⁹ / cm ³ and a thickness of 1.7 μm, and an n-type Al ₀ doped with Si at 2 × 10 ¹⁷ / cm ³ _An n-type layer in which a second n-type layer having a thickness of 0.8 μm is stacked with _0.07 Ga _0.93 N;
20 nm barrier layer (B) made of Al _0.09 Ga _0.91 N doped with Si 1 × 10 ¹⁹ / cm ^3, 15 nm well layer (W) made of non-doped In _0.01 Ga _0.99 N An active layer in which B / W / B / W / B / W / B / W / B / W / B are stacked in this order,
A first p-type layer (p-type cladding layer) made of Al _0.38 Ga _0.62 N with a thickness of 20 nm doped with 1 × 10 ²⁰ / cm ³ Mg, and a thickness doped with 4 × 10 ¹⁸ / cm ³ Mg A second p-type layer made of Al _0.07 Ga _0.93 N at 0.1 μm, and a third p made of Al _0.07 Ga _0.93 N with a thickness of 0.02 μm doped with 1 × 10 ²⁰ / cm ^{3 of} Mg A p-type layer in which a mold layer (p-type contact layer) is stacked;
An element structure in which is laminated is used. The semiconductor laminated structure exemplified above is an element structure for realizing an ultraviolet light emitting element used by being bonded to a support, and the underlying layer portion is removed together with the growth substrate after bonding.

  Further, as an example of the electrode formed in the element structure, a part of the laminated structure as shown in FIG. 2A is partially etched, and a part of the n-type layer 2 (first conductivity type layer) is shown in FIG. 2B. Rh and Ti—Al are formed as the first and second electrodes 21 and 31 on the p-type layer 3 (second conductivity type layer) and the n-type layer 2 (second conductivity type layer), respectively. Further, after the electrodes are formed and before the growth substrate is exposed, an insulating film that insulates the positive and negative electrodes from each other, an adhesive layer 5a that serves as an adhesive member for bonding to the support, an adhesive layer 5a, the insulating film 4 and the electrode A base layer 5 ′ of the adhesive layer 5 a to be connected can be formed, and a heat treatment step can be performed on the formed electrode.

(Electrode of element structure)
In the light emitting device of the present invention, the electrode unique to the present invention constituting the device functions as an ohmic contact part on the electrode surface on the side in contact with the semiconductor multilayer structure, and the other part is a semiconductor multilayer structure. It is pulled out to the outside and exposed for external connection. In the light emitting device of this embodiment, at least one of the electrodes connected to the semiconductor stacked structure has such a specific configuration.

  As described above, the electrode unique to the present invention is a semiconductor contact surface in which part of one main surface (first main surface) is in contact with the semiconductor multilayer structure, and one main surface excluding that part. The remaining surface is an external connection surface for external connection.

  Conventionally, a method using a via hole in which an electrode is provided by providing a hole from the bottom of a semiconductor multilayer structure to one conductivity type layer, bonding to a support, and mounting on a mounting surface, the support side and the mounting surface side There was a structure where external connection wiring was provided in the provided wiring part, but in this case, one of the opposing surfaces of the electrode was the surface connected to the semiconductor, and the other surface was the external circuit The electrode surface for connection to the.

  When one of the two electrode surfaces facing each other is used as an electrode surface (contact surface with a semiconductor layer) for connection with an element and the other is used as an external connection surface, manufacturing restrictions (manufacturing) Restrictions on the process and the order thereof) and the device structure design are problems. However, in the present invention, at least one electrode provided in the semiconductor multilayer structure has a semiconductor contact portion provided so as to be in direct contact with the element and an external connection portion exposed to the outside on the same surface side. Therefore, an electrode excellent in design flexibility and excellent in electrode reliability, for example, adhesion to the element structure, electrical characteristics, adhesion to external wiring, and the like can be easily obtained.

  In the light-emitting element of the present invention, one of the electrodes (first electrode) provided in the semiconductor multilayer structure has the above-described electrode structure, but the other electrode has a semiconductor contact portion on the same surface side as the first electrode. And one of the opposing surfaces of the electrode may be a semiconductor contact portion, and the other surface may be an external connection portion. This depends on the degree of design freedom of the element structure, and various electrode structures can be adopted depending on what mounting method and electrode arrangement are required for the entire light emitting element.

  In addition, as shown in the examples to be described later, the semiconductor stacked structure is, for example, a structure having a light emitting layer between first and second conductivity type layers, and having a first electrode in one conductivity type layer, Although the second conductive type layer has the second electrode, the semiconductor stacked structure may be a structure including a plurality of light emitting structure portions as shown in FIGS. 1 to 3, 5, 6, and 11 B. 4 and 11A, it may be constituted by one light emitting structure part, and the one light emitting structure part may have a structure having first and two electrodes. Here, the light emitting structure part is a part having a light emitting structure in the light emitting element structure. Specifically, in the element structure, the pn junction surface, the light emitting part or the active layer, A structure having a junction of two conductivity type layers. As a specific example, as shown in the drawings and examples, a structure having at least an interface between the active layer or the first and second conductivity type layers and the second conductivity type layer 3 It is.

  Specifically, the light emitting structure portion is etched, for example, in a semiconductor stacked structure in which a first conductive type layer, a light emitting layer, and a second conductive type layer are stacked, until the first conductive type layer is exposed, The second conductivity type layer is formed by being separated into islands or stripes. In addition, when the light emitting structure parts are separated from each other in this way, the second electrodes provided in the respective light emitting structure parts need to be connected to each other.

  The light-emitting element of the present invention may have a plurality of semiconductor stacked structures as shown in FIG. 7, and in addition to the light-emitting structure part and the element structure, the electrodes provided in each conductive type layer are separated. A plurality of them can be provided. In this way, various element structures, light emitting structures, and electrode structures can be realized by the electrode configuration unique to the present invention described above.

(Structure of light emitting element)
As described above, the structure of the light-emitting element may be such that at least one electrode of the semiconductor multilayer structure has the semiconductor contact portion and the external connection portion on the same surface side, and a specific configuration thereof will be described below with reference to the drawings. . In the following example, a semiconductor stacked structure having p-type and n-type layers and electrodes are formed on the respective layers will be described.

  FIG. 1 is a cross-sectional view showing a configuration of a light emitting device according to an embodiment of the present invention. In the cross section, two light emitting structure portions 12 are separated from each other, and p-type layers of each light emitting structure portion 12 are provided. 3, the second electrode 31 is formed on each. Here, the 2nd electrode 31 of the light emission structure part 12 is electrically connected mutually by making the adhesive member 5 between the support bodies 7 electroconductive. On the other hand, in the first electrode 21, the electrode disposed outside the light emitting structure 12 is an electrode including the semiconductor contact portion 21 b and the external connection portion 21 a on the same surface side. The first electrode 21 and the second electrode 31 are insulated from each other on the semiconductor multilayer structure by the insulating film 4. In addition, the first electrode 21 that is drawn between the light emitting structure parts and separated from the other first electrodes is actually arranged on the outer side by wiring (not shown) on the semiconductor stacked structure. It is connected to the first electrode 21.

  The second electrodes 31 are separated from each other in cross section, and are separated from each other even on the semiconductor multilayer structure. On the other hand, similar to the first electrode 21, continuous electrodes connected to each other on the semiconductor multilayer structure can be used. In this embodiment, as described above, the adhesive member 5 is made conductive and the support 7 is made a conductive substrate, whereby one main surface of the second electrode 31 is brought into contact with the p-type layer 3, External connection can be made from the other main surface side of the second electrode 31. That is, one main surface of the second electrode 31 is a surface for contacting the semiconductor, and the other main surface of the second electrode 31 functions as a surface for external connection. Then, using the support 7 to be bonded as a conductive material, the support 7 can be electrically connected to the second electrode 31, and the back side facing the surface on the semiconductor multilayer structure side can be externally connected to the second electrode. For example, it is possible to connect to an external circuit via an electrode provided on the back surface of the support 7. Thereby, for example, an electrode structure in which an electrode connected to the second electrode is provided on the back surface of the support 7 and the external connection portion 21a of the first electrode 21 is provided on the semiconductor multilayer structure side can be realized. In addition, when the support is an insulating material, the electrode of the support formed on the semiconductor laminated structure side and the electrode formed on the back surface on the opposite side may be connected by the wiring electrode. The electrode can be taken out from the back side of the support.

  As shown in the cross-sectional view, the light emitting element of FIG. 3C has a plurality of light emitting structure portions 12, and the plurality of light emitting structure portions 12 are connected to each other by a common second electrode 32. The second electrode 32 overlaps the first electrode 21 with the insulating film 4 interposed therebetween. In the light emitting device of FIG. 3C, a part of the electrode surface in contact with the p-type layer 3 of the second electrode 32 is exposed by removing a part of the semiconductor multilayer structure, and the exposed part is an external connection of the second electrode. Part 32a. In the light emitting device of FIG. 3C, one of the first electrodes 21 is part of one main surface which is a surface in contact with the n-type layer 2 of the first electrode 21 as in the light emitting device shown in FIG. 1. It is exposed by removing a part of the structure, and the exposed portion is the external connection portion 21a of the first electrode. As described above, in the light emitting device of FIG. 3, both the first electrode 21 and the second electrode 32 have the semiconductor contact portion and the external connection portion on the same surface side. Unlike a light emitting element, it is not for external connection, and therefore an insulating substrate can be used. That is, both the first electrode 21 and the second electrode 32 have the same electrode structure, and one of them is a common electrode that connects the separated light emitting structures, and the other electrode is a semiconductor laminated layer. Wiring electrodes are connected to each other on the structure. As in FIGS. 1 and 2, the light emitting structure can be separated in the plane or can be connected and branched. 3, 5 and 9, the second electrodes 32 and 34 are provided in the second semiconductor layer of the light emitting structure. However, each light emitting structure has an ohmic property and electrode formation accuracy. It is preferable that an ohmic electrode is provided on each of the second semiconductor layers 3 and a wiring electrode for connecting the electrodes of the light emitting structure part to each other, for example, a wiring electrode for providing an external connection part is further provided.

  In the light emitting device of FIG. 4, the first electrode and the second electrode are formed on the electrode forming surface side of the semiconductor laminated structure, as in FIG. 3C, and the first and second electrodes are both semiconductor contact portions on one main surface. And an external connection portion, and an electrode structure that can be externally connected from the semiconductor multilayer structure side. Further, the difference from FIG. 3C is that there is one light emitting structure 12, so that the first electrode 23 and the second electrode 33 are one each without overlapping each other, and the semiconductor laminated structure and the support 7 Since the insulating film 4 is provided between them, and the structure is insulated from each other, the reliability is excellent. In FIGS. 3C and 4 above, the adhesive member 5 to the support 7 may be insulating because it does not conduct to the support. However, in consideration of the heat dissipation of the light emitting element, a metal such as an alloy having excellent thermal conductivity. A member is preferably used.

The light emitting element of FIG. 5 is different from the light emitting element of FIG. 3C in that a conductive adhesive member is used as the adhesive member 51 in the same manner as the light emitting element of FIG. This is a surface that is brought into contact with the mold layer 3 and the other main surface of the second electrode 34 is a surface that is externally connected. Similar to the light emitting element of FIG. 1, by using a conductive substrate as the support 7, for example, the lower surface of the support 7 is connected to an external circuit.
5 has a plurality of light emitting structure portions 12 similar to the light emitting device of FIG. 3C, and the plurality of light emitting structure portions 12 are connected to each other by a common second electrode 34. The common electrode is advantageous in manufacturing as compared with the light emitting element of FIG. 1, but is inferior in reliability because it overlaps with the first electrode as in FIG. 3C and no electrode is individually formed in each light emitting structure.

  The element shown in FIG. 6 is different from the element structure shown in FIG. 1 in that the structures of the first and second electrodes are reversed. Specifically, since the second electrode 35 becomes a wiring electrode connected to each other on the semiconductor stacked structure, the light emitting structure 12 can be connected to each other. On the other hand, the first electrodes 25 are connected to each other by a conductive adhesive member. Thus, when only one electrode has the semiconductor contact portion and the external connection portion on the same surface, the electrode may be the first electrode (n electrode) or the second electrode (p electrode).

  In the light emitting device of FIG. 7, two semiconductor stacked structure portions 10a separated from each other are connected to each other by a first electrode 26 of a common electrode that provides a semiconductor contact portion, and externally connected to the same surface side of the first electrode 26. It has a structure with a connection part. Specifically, a part of one main surface of the first electrode 26 is exposed by removing a part of the semiconductor multilayer structure 10 to be an external connection part 26a. Further, both sides of the external connection portion 26a on one main surface of the first electrode 26 are in contact with the n-type layers of the two separated semiconductor stacked structure portions 10a. Thus, in the light emitting device of FIG. 7, the first electrode 26 is an electrode having the semiconductor contact portion 26b and the external connection portion 26a on the same surface side.

On the other hand, in the light emitting element of FIG. 7, by using the adhesive member as a conductive adhesive member and the support 7 as a conductive substrate, one main surface of the second electrode 36 is brought into contact with the p-type layer 3, External connection can be made from the other main surface side of the two electrodes 36. That is, one main surface of the second electrode 36 is a surface for contacting the semiconductor, and the other main surface of the second electrode 36 functions as a surface for external connection.
Here, the two semiconductor multilayer structures are a plurality of semiconductor multilayer structures separated from each other. As in this example, the light emitting element of the present invention can be provided with a plurality of semiconductor multilayer structures in one light emitting element. . By having a plurality of laminated structures separated in this way, it is possible to suppress the absorption loss due to the propagation of light in each laminated structure 10 and to obtain a light emitting element structure excellent in external extraction efficiency.

(electrode)
The electrode materials for the first and second electrodes 21 and 31, particularly the electrode material for the p-type nitride semiconductor layer, are nickel (Ni), platinum (Pt) palladium (Pd), rhodium (Rh), ruthenium (Ru). , Osmium (Os), Iridium (Ir), Titanium (Ti), Zirconium (Zr), Hafnium (Hf), Vanadium (V), Niobium (Nb), Tantalum (Ta), Cobalt (Co), Iron (Fe) At least one selected from the group consisting of manganese (Mn), molybdenum (Mo), chromium (Cr), tungsten (W), lanthanum (La), copper (Cu), silver (Ag), and yttrium (Y) Including metals, alloys, laminated structures, and their compounds, for example, conductive oxides and nitrides, conductive metal oxides (oxide semiconductors) also dopin tin Indium oxide thickness 5nm~10μm that (Indium Tin Oxide; ITO), ZnO, such as doped and _In 2 _{O 3} or SnO _2, or a nitride semiconductor of the group III element such as those in Ga, can be cited It is preferably used as an electrode having translucency. In the case of an oxide semiconductor material, the conductive layers 2 and 3 and the electrodes 21 and 31 have intermediate functions, and the conductivity of the conductive layers 2 and 3 and the metal oxide is the same. When an oxide semiconductor layer having a different conductivity type is used as an electrode, an intervening layer (reverse conductivity type layer, oxide semiconductor, metal layer) may be further interposed between the semiconductor stacked structure 10 and the semiconductor laminate structure 10. In addition, since it functions as a diffusion conductor, such a semiconductor layer or electrode material may be used as the diffusion conductor on the first conductivity type layer 2 side. In the case where the electrode 21 is a metal layer, it can be formed of a thin film that ensures translucency in order to be translucent, and in the case of a reflective electrode, a highly reflective metal, for example, Al, Ag, and Rh can be used.
Here, as the first electrode, a Ti layer (first layer) for the ohmic contact with the first conductivity type layer and the nitride semiconductor layer, such as Ti / Al, and the insulating film 4. An Al layer (second layer) for bonding to the bonding member 5 or bonding, preferably gold, Al, or a platinum group can be used. Further, a high melting point as a barrier layer between the first layer for ohmic (for example, W, Mo, Ti is preferable for ohmic contact with the first conductivity type layer) and the second layer for bonding or padding. Structure for providing a metal layer (W, Mo, platinum group), for example W / Pt / Al, Ti / Rh (barrier layer 1) / Pt (barrier layer 2) / Al, Ti / Al / Ti / Pt (barrier layer) / Al is used, and is particularly preferably used as the first electrode (for ohmic contact). In addition, as the ohmic electrode 23 of the second conductivity type layer 3, a conductive oxide such as ITO is used in addition to a two-layer structure of Ni / Au and Co / Au laminated in order from the p-type layer side. Metals of platinum group elements and laminated structures / alloys thereof, for example, a two-layer structure of Rh / Ir, Pt / Pd, etc. are preferably used.
Further, in the light emitting device structure of the present invention, when the electrode formation surface and the surface facing the support in the semiconductor multilayer structure are the light extraction surface side as shown in FIG. By this uneven | corrugated process, suitable light extraction can be implement | achieved and external quantum efficiency can increase. Such an uneven portion 9 is formed on the end surface, side surface, exposed surface, interface, etc. of the semiconductor multilayer structure 10 serving as the light extraction surface of the light emitting element, such as an interface between different materials, for example, the surface of the semiconductor layer, the substrate surface, the metal formation surface. Alternatively, it may be formed at any of the film interface and the surface of the insulating film. Moreover, it can also form in the reflective surface side, for example, a support body side, so that it may contribute to reflection. For example, the film can be processed on the surface of the transparent insulating film 8 in FIG. 6 to form irregularities. Here, as the shape of the concavo-convex portion 6, a convex portion (top surface) or a concave portion (bottom surface) of various shapes such as a dot shape, a lattice shape, a honeycomb shape, a branch shape, a rectangular shape, a polygonal shape, a circular shape, etc. The cross-sectional shape may be a rectangular shape, a trapezoidal shape, a cone cross-section, or the like. The size is appropriately set. Specifically, the distance between the opening, the convex portion, and the concave portion, the length of one side (rectangular shape, polygonal shape), the diameter (dot shape, circular shape), 1 to 10 μm, preferably 2 to 5 μm.

(Support and its bonding structure)
The structure for bonding the support and the semiconductor laminated structure can be in various forms as seen in FIGS. This bonding mode is roughly classified into those used for external connection of one electrode and those not used. That is, the conductive adhesive member electrically separates one electrode of the semiconductor multilayer structure and the support 7 or the electrode formed on the support from the semiconductor multilayer structure. There is a structure. Further, it can be further classified by the in-plane arrangement of the first and second electrodes on the semiconductor laminated structure, the arrangement of the insulating film that insulates both electrodes, and the laminated structure thereof. That is, the electrodes on the semiconductor laminated structure are separated in the plane (FIGS. 1, 2, 6 etc.), and one electrode overlaps the other electrode through an insulating film (FIGS. 3, 5 etc.) There are two types, and the former is one in which the electrodes are continuously connected to each other by wiring on the semiconductor laminated structure (FIG. 11A), and the other is separated and connected to each other by a conductive adhesive member (FIG. 11B). Divided.
Here, as a growth substrate on which the semiconductor multilayer structure 10 is grown, in the case of a nitride semiconductor element, sapphire or spinel (MgA1 ₂ O ₄ ) whose principal surface is one of the C-plane, R-plane, and A-plane is used. Insulating substrates such as silicon carbide (6H, 4H, 3C), silicon, ZnS, ZnO, Si, GaAs, diamond, and oxide substrates such as lithium niobate and neodymium gallate that are lattice-bonded to nitride semiconductors. Can be mentioned. In addition, a nitride semiconductor substrate such as GaN or AlN can be used as long as it is thick enough to allow device processing (several tens of μm or more). The heterogeneous substrate may be off-angle, and when using the sapphire C-plane, the range is 0.01 ° to 3.0 °, preferably 0.05 ° to 0.5 °.
Various materials can be used as the material of the support 7 depending on the purpose, and in order to increase the heat dissipation of the element, a metal material substrate or a semiconductor material substrate is used as the heat dissipation conductive substrate. In addition, insulating substrates such as ceramics and sintered bodies can also be used. Specific materials include a semiconductor substrate made of a semiconductor such as Si, SiC, GaAs, GaP, InP, ZnSe, ZnS, ZnO, or a single metal substrate, or two types having a small non-solid solubility or solid solution limit. A metal substrate made of a composite of the above metals can be used. Specifically, the metal material is one or more metals selected from highly conductive metals such as Ag, Cu, Au, and Pt, and W, Mo. , Cr, Ni, etc., and one or more metals selected from metals with high hardness can be used. Here, as shown in FIG. 10, when a support 7 made of a semiconductor material is used, the support 7 of the semiconductor element can be made by adding an element function, for example, a Zener diode. Furthermore, it is preferable to use a Cu—W or Cu—Mo composite as the metal substrate. When taking out light from the support 7 side by selecting the material of the support 7 and the bonding method in consideration of the absorption and loss of light of the light emitting element by the support 7 and the adhesion to the semiconductor laminated structure 10. The light-transmitting material is selected, and the light-transmitting adhesive member 5 such as a resin material or a partial bonding method is used to reduce the light loss. In the case of the direction, the external extraction efficiency can be improved by providing a reflective film such as Al or Ag or a reflective electrode on a part of the adhesive member 5 or the support 7, the insulating film 4 or the semiconductor laminated structure 10. It is good to raise.
In addition, as a material and structure of the adhesive member, in addition to a mixture such as an Ag paste, a carbon paste, an ITO paste, a composite composition (organic substance), a solder material, heat resistance from the light emitting element 120 is taken into consideration. As an excellent material and structure, metals such as Au, Sn, Pd, and In or their laminates and alloys are effective for the large area, large current drive and high heat generating element of the present invention. The combination of the eutectic forming layers is preferably Au—Sn, Sn—Pd, or In—Pd. In addition, metal / metal bonding such as metal bumps and Au-Au bonding can also be used.
By bonding the adhesive member to the support, the bonding can be performed without providing a gap between the semiconductor multilayer structure and the support at the bonded portion. As a result, light emission from the semiconductor multilayer structure is not lost due to a gap between the support and the substrate, and efficient light emission is possible. In addition, by using a conductive material as the adhesive member, it is possible to electrically connect a plurality of partial electrodes separated on the semiconductor multilayer structure, and to electrically connect to the support side through the adhesive member. You can also When electrically connecting the electrode on the semiconductor laminated structure and the support side, it is possible to form a wiring part for connecting to an external circuit on the support side. Even when the accuracy is low, it is advantageous in that excellent light emission characteristics can be secured without being affected by the positional accuracy and the manufacturing yield can be improved.

  That is, in FIG. 11A, the first electrode 21 and the second electrode 31 are each connected on the semiconductor multilayer structure by the wiring electrode 81, and in FIG. 11B, the first electrode 21 is connected on the semiconductor multilayer structure by the wiring electrode 81. The separated second electrodes 31 are connected to each other by, for example, a conductive adhesive member used when being bonded to the support.

(Light emitting device)
Hereinafter, an example of a light-emitting device configured using the light-emitting element of the embodiment will be described.
FIG. 8 shows an example in which the light emitting device shown in FIG.
In the light emitting device of FIG. 5, one (for example, p-side) support electrode for external connection is formed on the mounting surface side of the support 7, and the support electrode and one lead 101a are electrically conductive. They are joined and electrically connected by an adhesive member 51. Further, the n-side first electrode 24 of the light emitting element is connected to the other lead 102a by a conductive wire at the external connection portion 24a.

FIG. 9 illustrates an example of a light-emitting device configured using the light-emitting element of FIG. In this example, the external connection portion 23a of the first electrode 23 and the external connection portion 33a of the second electrode 33 are respectively connected to the lead 101b and the lead 102b by conductive wires. Thus, when both the first electrode 23 and the second electrode 33 have an electrode structure peculiar to the present invention, the support side is mounted on, for example, a heat dissipation base, and each electrode of the semiconductor laminated structure A form in which the lead 101b and the lead 102b are electrically connected from the connecting portion by the wiring member can be taken.
In addition, in FIG. 9, what is shown with the code | symbol 110 is the heat radiator which consists of metals, for example.

  In another example, as shown in FIG. 10, a light-emitting device is configured by mounting a support body as a protective element of a light-emitting element, for example, a Zener diode, and forming a protective circuit in a package. . Specifically, a zener diode is formed in the support body 70 so that a zener diode as a protection element is connected in reverse parallel to the light emitting diode of the semiconductor multilayer structure, and the external connection portion 21a of the first electrode 21 and the zener diode The positive electrode 71a is connected with the wiring electrode 81, and further connected to the lead frame 101c with a conductive wire. The second electrode 31 is connected to the negative electrode 72a of the Zener diode and further connected to the lead frame 102c by a conductive wire.

  In the example shown in FIG. 10, the package includes a lead frame 101c and a lead frame 102c, and includes a stem 105 and a cap 106 that seals the light emitting element. The cap 106 includes a window portion 106a. ing.

(Manufacturing method of light emitting element)
The manufacturing method of the light emitting device of the present invention will be described with reference to the following Examples 1 to 3.
In addition, Example 1 shows the method of manufacturing the light emitting element shown in FIG. 12 using FIG. 13, Example 2 shows the method of manufacturing a light emitting element using FIG. 2 in Example 2, and FIG. Show.

In Example 1, first, an electrode formation for forming a first electrode (n electrode) by growing a semiconductor stacked structure 10 in which an n-type layer and a p-type layer made of a nitride semiconductor are stacked on a growth substrate 1 is performed. A portion 11 (a portion where the surface of the n-type layer 2 is exposed) is formed (FIG. 13A). Here, the above-described semiconductor stacked structure is used as a specific stacked structure. As shown in FIG. 13A, the semiconductor multilayer structure 10 on the growth substrate 1 is provided with a plurality of element structure portions 13, and the element structure portion 13 includes a first electrode formation portion 11 and a light emitting structure portion 12 adjacent thereto. Is provided. Here, the electrode forming portion 11 is connected to the forming portion 11a sandwiched between the light emitting structure portions 12 and the electrodes 21x as shown in FIG. An external exposed portion 11b provided with an external connection electrode 21y is provided. Next, a first electrode (n electrode) 21 having a structure in which Ti—Al—Ti—Pt—Al is sequentially stacked on the electrode forming portion 11 and the light emitting structure portion 12 and a structure in which Rh—Ir—Pt are sequentially stacked. A second electrode (p electrode) 31 is formed (FIG. 13B). At this time, annealing is performed at 600 ° C. after electrode formation.
Next, as shown in FIG. 13C, the SiO ₂ is formed as the insulating film 4 on the semiconductor multilayer structure 10 via the electrodes 21 and 31, and is electrically connected to the support side. A part of the electrode 31 is exposed. Further, as shown in FIG. 13D, a bonding layer in which Ti—Pt—Au is stacked on the insulating film 4 as a base layer of the adhesive member and also serves as the pad electrode 37 electrically connected to the second electrode 31. The layer 5 'is formed in advance on the light emitting structure 12 (second electrode 31) and on the electrode forming portion 11 (insulating film 4, first electrode 21) to cover almost the entire surface of the element structure 13, and its bonding layer A member in which Sn—Au is laminated is formed as an adhesive member 5 a that covers the element structure portion 13 over almost the entire surface. On the other side of the support 7 (here, Cu—W is used), a bonding layer of Ti—Pt—Au as a base layer and an adhesive member 5b made of Sn—Au thereon are formed.
Next, as shown in FIG. 13E, the element-side and support-side adhesive members 5 (5a and 5b) are thermocompression bonded to each other, bonded, and then irradiated with laser light from the substrate side to remove the growth substrate 1. Then, the base layer and a part of the n-type layer, which are part of the semiconductor multilayer structure 10, are removed by polishing or the like to expose the n-type layer. Subsequently, the semiconductor laminated structure 10 of the externally exposed portion 11b is removed by etching, and a part of the first electrode 21 on the formation surface side is exposed leaving the semiconductor contact portion 21b and separated from each other on the support. An external connection portion 21a provided on the exposed portion 11b protruding outward from the semiconductor laminated structure portion 10a and each structure portion 10a is formed. A pad electrode is provided on the electrode portion 21a, and a light-transmitting protective film (not shown) that covers almost the entire surface of the element laminated structure 10 is formed. Here, a pad electrode in which Ti / Pt / Au is sequentially laminated is formed on the external connection portion 21a. Finally, the element structure 13 (DD line shown in FIG. 13E) is cut with a dicer to obtain the light emitting element 120.
The light emitting element 101 obtained as described above has a structure as shown in FIG. 12, and will be specifically described below. FIG. 12A is a plan view for explaining the upper surface of the light emitting element structure after the electrodes 21 and 31 are formed as viewed from the electrode forming surface side. The first conductivity type layer (n-type layer) 2 is exposed, and the formed first electrode (n electrode) 21 is provided, and is surrounded by the linear electrode 21x, and is separated from each other by a plurality of islands. On the second conductivity type layer (p-type layer) 3 in the structure portion 12a, the second electrodes 31a are respectively provided. Furthermore, it has a light emitting structure portion 12b at the outer edge surrounding the region where the plurality of light emitting structure portions 12a are arranged, and a second electrode (p) is formed on the second conductive type layer (p-type layer) 3b of the light emitting structure portion 12b. Electrode) 31c. Further, the first electrode portion 21y is provided as the externally exposed portion 11b that is electrically connected to the lattice-shaped first electrode 21x. FIG. 12B is a plan view of the obtained light-emitting element, and FIG. 12C is a cross-sectional view taken along the line AA. As can be seen from the figure, the first electrode 21 provided in the element stacked structure 10 includes the contact portion 21b. And the external connection portion 21a, and the pad electrode 22 is provided on the external connection portion 21a.
Such a light emitting device of Example 1 has a light output of 74.64 mW, while Comparative Example 1 has a light output of 69.59 mW, which is about 7% higher than that of Comparative Example 1. Can be seen.

  In Example 2, first, an n-type layer 2 and a p-type layer 3 each made of a nitride semiconductor are grown on a growth substrate 1 (FIG. 2A). The base layer is grown before the n-type layer 2 and the p-type layer 3 are grown, but this is not shown. Here, as a specific laminated structure, a base layer (low-temperature buffer layer, first base layer, second base layer), n-type layer (first n-type layer, The second n-type layer), the active layer, and the p-type layer (first to third p-type layers) are stacked.

Next, the n-type layer 2 is etched to expose the electrode formation surface (the surface of the n-type layer 2) for forming the first electrode (n-electrode) and separate it into a plurality of light emitting structure portions 12. The first electrode 21 is formed on the electrode forming surface, and the second electrode 31 is formed on the p-type layer 3 of the light emitting structure 12 (FIG. 2B).
Then, the insulating film 4 that insulates between the first electrode 21 and the second electrode 31 is formed (FIG. 2C), and an adhesive member 5a for bonding to the support 7 is formed thereon as an electrode and insulating film having a semiconductor laminated structure. It is provided so as to cover the top (FIG. 2D). Here, the specific first and second electrodes have a structure in which Ti—Al—Ti—Pt—Al is sequentially stacked on the n-type layer surface exposed as the first electrode 21, and the p-type layer surface as the second electrode 31. A structure in which Rh—Ir—Pt is laminated in order can be used. After the electrode is formed, the electrode is heat-treated before being bonded to the support. For example, in this electrode structure, the first and second electrodes are formed at 600 ° C. Can be annealed. Further, SiO ₂ is formed as the insulating film 4, the adhesive member is the bonding surface side of each of the element structure and the support 7, the underlayer for the adhesive member, and the element structure side is the second electrode pad. As the electrode, a bonding layer in which Ti—Pt—Au is stacked is formed in advance (not shown), and a member in which Sn—Au is stacked on the bonding layer can be used as the adhesive member 5a. .

A support body 7 provided with an adhesive member 5b on one side is prepared, and the semiconductor laminate structure in which the first electrode 21 and the second electrode 31 are formed on the inner side with the adhesive member 5b and the adhesive member 5a facing each other. The support 7 and the laminated structure of the growth substrate 1 are bonded together by thermocompression bonding so as to sandwich them (FIG. 2E). Here, Cu-W can be used as the support. In this bonding step, the adhesive member 5 may be formed and bonded only to either the support 7 or the semiconductor laminated structure side.
After the bonding, the growth substrate 1 and the underlayer are removed (FIG. 2F). Here, the substrate 1 is removed by irradiating laser light (KrF (wavelength 248 nm) excimer laser) from the substrate side, decomposing the semiconductor near the interface between the substrate and the semiconductor by laser ablation, and separating the substrate. Can be used. Polishing or the like can be used for removing the underlayer after removing the substrate.

Then, in order to expose the surface of the first electrode 21 serving as the external connection portion 21a on the same surface as the semiconductor contact surface of the first electrode 21, the semiconductor stacked structure outside the light emitting element structure is removed (FIG. 2G). .
Further, in the second embodiment, although not shown, a protective film is formed on the surface of the semiconductor multilayer structure, and a pad electrode is formed on the external connection portion 21a.
In Example 2, as shown in FIG. 6, an element processing step for providing an optical function for increasing the light extraction efficiency may be provided on the light extraction side of the semiconductor multilayer structure.
In addition, after the electrode forming step, a step of performing heat treatment of the electrode and heat treatment of the element structure can be provided to improve electrode characteristics and device characteristics.
In this way, the light emitting device shown in FIG. 1 can be manufactured.

In Example 3, a light emitting device having a first electrode and a second electrode each having an external connection portion formed on the same surface as the semiconductor contact surface is manufactured.
In Example 3, the n-type layer 2 and the p-type layer 3 are grown on the growth substrate 1 to expose the electrode formation surface for forming the first electrode and to separate the light-emitting structure portions 12 into each other. Then, the first electrode 21 is formed on the electrode formation surface of the n-type layer 2, and the second electrode 32 is formed on the p-type layer 3 of the light emitting structure 12 (FIG. 3A). In Example 3, as shown in FIG. 3A, the second electrode 32 is used as a common electrode for a plurality of light emitting structure portions.

Then, an adhesive member 5a for adhesion to the support 7 is applied between the first electrode 21 and the second electrode 31, and is bonded to the support 7 having the adhesive member 5b applied to one surface (FIG. 3A). ).
After the bonding, the growth substrate 1 and the underlayer are removed (FIG. 3B).
Here, an insulating substrate is used as a support, and an insulating member is used as an adhesive member.

And on the same surface as the semiconductor contact surface 21b of the first electrode 21, in order to expose the surface of the first electrode 21 serving as the external connection portion 21a, and on the same surface as the semiconductor contact surface 32b of the second electrode 32, In order to expose the surface of the second electrode 32 serving as the external connection portion 32a, the semiconductor laminated structure outside the light emitting element structure is removed (FIG. 3C).
As described above, the light emitting device according to the present invention in which the first electrode 22 has the semiconductor contact portion 21b and the external connection portion 21a on the same surface side, and the second electrode 32 has the same electrode structure is manufactured. it can.
(Comparative Example 1)
In Example 1, it produces similarly except the following points. Only the second electrode (p electrode) is formed before bonding to the support without forming the electrode forming portion exposing the surface of the n-type layer. The first electrode (n-electrode) is formed on the exposed n-type layer after removing the growth substrate, the base layer, and part of the n-type layer after bonding to the support. Here, the semiconductor laminated structure for providing the external connection portion of Example 1 is not removed, and the pad electrode is not formed. That is, the light emitting element of Comparative Example 1 has a structure in which neither the first or second electrode has an external connection portion, but the first and second electrodes are arranged to face each other so as to sandwich the semiconductor multilayer structure.
In Comparative Example 1, since the first electrode is formed on the light extraction side, the light output tends to be lower than that in Example 1 due to light shielding by the electrode, light absorption of the electrode material, and the like. In addition, since the first electrode is formed after bonding, the heat treatment needs to consider the heat resistance of the adhesive member, and the heat treatment cannot be performed sufficiently. For this reason, it is difficult to obtain a light-emitting element having a first electrode with sufficient characteristics (heat resistance, adhesiveness, etc.).

  INDUSTRIAL APPLICABILITY The present invention can be mainly applied to a semiconductor laminated structure formed by laminating semiconductors to an electrode structure provided thereon, and such an element structure includes light emitting elements, LEDs, and LDs. It can also be used for a light-emitting device in which the light-emitting element is mounted on a substrate, a package, or the like, a light-emitting device using a conversion member such as a phosphor that partially converts light of the light-emitting element, and the like.

1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. 1 is a schematic cross-sectional view for explaining a manufacturing process of the light-emitting element shown in FIG. Schematic cross-sectional view (2) illustrating the manufacturing process of the light-emitting element of FIG. Schematic cross-sectional view (3) explaining the manufacturing process of the light-emitting element of FIG. FIG. 4 is a schematic cross-sectional view for explaining a manufacturing process of the light-emitting element shown in FIG. Schematic cross-sectional view (5) explaining the manufacturing process of the light-emitting element of FIG. FIG. 6 is a schematic cross-sectional view for explaining a manufacturing process of the light-emitting element shown in FIG. Schematic cross-sectional view (7) explaining the manufacturing process of the light emitting device of FIG. Schematic cross-sectional view (1) explaining the manufacturing process of the light emitting element of other embodiment which concerns on this invention Schematic cross-sectional view (2) explaining the manufacturing process of the light emitting element of said other embodiment Schematic cross-sectional view (3) explaining the manufacturing process of the light emitting element of said other embodiment Schematic cross-sectional view of a light emitting device of Modification 1 according to the present invention Schematic cross-sectional view of a light emitting device of Modification 2 according to the present invention Schematic cross-sectional view of a light emitting device of Modification 3 according to the present invention Schematic cross-sectional view of a light emitting device of Modification 4 according to the present invention Schematic cross-sectional view of a light-emitting device configured using a light-emitting element according to an embodiment of the present invention Schematic sectional view showing a state in which a light emitting element of another form according to the present invention is mounted Schematic sectional view of a light-emitting device in which a light-emitting element and a Zener diode according to the present invention are integrally formed The schematic top view of the semiconductor laminated structure in one Embodiment which concerns on this invention Schematic top view of a semiconductor multilayer structure according to another embodiment of the present invention The top view seen from the electrode formation surface side of Example 1 which concerns on this invention The top view of the light emitting element obtained in Example 1 Sectional drawing about the AA line of FIG. 12A Sectional drawing after forming the electrode formation part in the semiconductor lamination structure which laminated the n type layer and p type layer which consist of a nitride semiconductor in the growth substrate in the manufacturing process of the light emitting element of Example 1. Sectional drawing after forming the 1st electrode (n electrode) and the 2nd electrode (p electrode) in the manufacturing process of the light emitting element of Example 1. Sectional drawing after forming the insulating film 4 on a semiconductor laminated structure and exposing a part of 2nd electrode 31 in the manufacturing process of the light emitting element of Example 1. FIG. Sectional drawing after forming the joining layer and the adhesive member 5b in the support body side in the manufacturing process of the light emitting element of Example 1. FIG. Sectional drawing before dividing | segmenting into each light emitting element in the manufacturing process of the light emitting element of Example 1. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Growth substrate, 2 n-type layer, 3 p-type layer, 4 Insulating film, 5, 5a, 5b, 51 Adhesive member, 7 Support body, 21, 23, 24, 25, 26 1st electrode, 21a, 23a, 24a, 26a, 32a, 33a, 35a External connection part, 21b, 23b, 24b, 26b, 32b, 33b, 35b Semiconductor contact part, 22 Pad electrode, 31, 32, 33, 34, 35, 36 Second electrode, 81 Wiring electrode, 100 package, 101a, 101b, 102a, 102b lead, 101c, 102c lead frame, 105 stem, 106 cap, 106a window, 10 semiconductor stacked structure (10a semiconductor stacked structure), 11 first electrode forming section ( 11a electrode formation part, 11b external exposure part), 12 light emission structure part, 13 element structure part.

Claims (7)

A semiconductor stacked structure in which a first semiconductor layer and a second semiconductor layer having different conductivity types are stacked, and a part of the first semiconductor layer is exposed ;
A first electrode formed on the exposed surface of the first semiconductor layer and connected to the first semiconductor layer;
A second electrode formed on a surface of the second semiconductor layer on the same side as the surface on which the first electrode is formed, and connected to the second semiconductor layer;
A semiconductor light emitting device in which the side on which the first electrode and the second electrode of the semiconductor multilayer structure are formed is bonded to a support;
By providing an adhesive member between the first electrode and the second electrode and the support, the support and the semiconductor laminated structure are bonded,
The first electrode is led out from the semiconductor stacked structure along the adhesive member, and a part of one main surface which is a surface in contact with the first semiconductor layer is an external connection portion. A semiconductor light emitting device characterized . The adhesive member is an insulating, the second electrode, the are from the semiconductor multilayer structure along the adhesive member is drawn to the outside, the second one main surface is a surface in contact with the semiconductor layer one the device according to claim 1, the part was external connection. The support and the adhesive member are conductive, and in the second electrode, the other main surface opposite to one main surface that is in contact with the second semiconductor layer is electrically connected to the support by the adhesive member. The semiconductor light emitting device according to claim 1. The adhesive member is conductive, and the second electrode is separated into a plurality of partial electrodes on the semiconductor multilayer structure, and the plurality of partial electrodes are electrically connected to each other by the conductive adhesive member. the device according to any one of claims 1 to 3 were. Forming a semiconductor multilayer structure including a first semiconductor layer and a second semiconductor layer having different conductivity types on the growth substrate, wherein a part of the first semiconductor layer is exposed ;
A first electrode connected to the first semiconductor layer is formed on the exposed surface of the first semiconductor layer, and the second electrode is formed on the surface of the second semiconductor layer on the same side as the first electrode. Forming a second electrode connected to the semiconductor layer;
A step of attaching the side on which the first electrode and the second electrode of the semiconductor multilayer structure are formed to a support through an adhesive member;
An electrode exposing step of removing the growth substrate, removing a part of the semiconductor multilayer structure, and extracting and exposing a part of the first electrode to the outside along the adhesive member from the semiconductor multilayer structure ; A method for manufacturing a semiconductor light-emitting device including: The method for manufacturing a semiconductor light emitting element according to claim 5 , wherein, in the step of attaching the support, after providing an insulating film covering the first electrode, the support is attached to the support. In the semiconductor lamination step, a semiconductor lamination structure having a plurality of element regions each serving as an element structure portion is formed, and in the electrode exposure step, a part of the first electrode is exposed by partially removing the semiconductor lamination structure. The method for manufacturing a semiconductor light emitting device according to claim 5 , wherein the plurality of device regions are separated from each other.

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