JP4351990B2 - 強誘電体メモリ装置及びその製造方法 - Google Patents

強誘電体メモリ装置及びその製造方法 Download PDF

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Publication number
JP4351990B2
JP4351990B2 JP2004355243A JP2004355243A JP4351990B2 JP 4351990 B2 JP4351990 B2 JP 4351990B2 JP 2004355243 A JP2004355243 A JP 2004355243A JP 2004355243 A JP2004355243 A JP 2004355243A JP 4351990 B2 JP4351990 B2 JP 4351990B2
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Japan
Prior art keywords
film
ferroelectric
hydrogen barrier
memory device
upper electrode
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JP2004355243A
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Japanese (ja)
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JP2005094038A (ja
JP2005094038A5 (enExample
Inventor
貴文 吉川
巧 三河
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Publication of JP2005094038A5 publication Critical patent/JP2005094038A5/ja
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JP2004355243A 2001-09-27 2004-12-08 強誘電体メモリ装置及びその製造方法 Expired - Lifetime JP4351990B2 (ja)

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JP2004355243A JP4351990B2 (ja) 2001-09-27 2004-12-08 強誘電体メモリ装置及びその製造方法

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JP2001296855 2001-09-27
JP2004355243A JP4351990B2 (ja) 2001-09-27 2004-12-08 強誘電体メモリ装置及びその製造方法

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JP2002224451A Division JP3962296B2 (ja) 2001-09-27 2002-08-01 強誘電体メモリ装置及びその製造方法

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JP2005094038A JP2005094038A (ja) 2005-04-07
JP2005094038A5 JP2005094038A5 (enExample) 2007-03-15
JP4351990B2 true JP4351990B2 (ja) 2009-10-28

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JP2004355243A Expired - Lifetime JP4351990B2 (ja) 2001-09-27 2004-12-08 強誘電体メモリ装置及びその製造方法

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Publication number Priority date Publication date Assignee Title
JP5230119B2 (ja) * 2006-04-28 2013-07-10 株式会社半導体エネルギー研究所 半導体装置及びその作製方法

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JP2005094038A (ja) 2005-04-07

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