JP4345210B2 - 固体撮像素子の製造方法 - Google Patents
固体撮像素子の製造方法 Download PDFInfo
- Publication number
- JP4345210B2 JP4345210B2 JP2000267397A JP2000267397A JP4345210B2 JP 4345210 B2 JP4345210 B2 JP 4345210B2 JP 2000267397 A JP2000267397 A JP 2000267397A JP 2000267397 A JP2000267397 A JP 2000267397A JP 4345210 B2 JP4345210 B2 JP 4345210B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- lens
- solid
- state imaging
- plasma cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 31
- 230000035945 sensitivity Effects 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Light Receiving Elements (AREA)
- Liquid Crystal (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000267397A JP4345210B2 (ja) | 2000-09-04 | 2000-09-04 | 固体撮像素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000267397A JP4345210B2 (ja) | 2000-09-04 | 2000-09-04 | 固体撮像素子の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009097278A Division JP4930539B2 (ja) | 2009-04-13 | 2009-04-13 | 固体撮像素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002076316A JP2002076316A (ja) | 2002-03-15 |
| JP2002076316A5 JP2002076316A5 (enrdf_load_stackoverflow) | 2007-03-08 |
| JP4345210B2 true JP4345210B2 (ja) | 2009-10-14 |
Family
ID=18754329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000267397A Expired - Fee Related JP4345210B2 (ja) | 2000-09-04 | 2000-09-04 | 固体撮像素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4345210B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4383959B2 (ja) | 2003-05-28 | 2009-12-16 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
| JP2005072364A (ja) * | 2003-08-26 | 2005-03-17 | Fuji Film Microdevices Co Ltd | 固体撮像素子及びその製造方法 |
| KR20050057968A (ko) * | 2003-12-11 | 2005-06-16 | 매그나칩 반도체 유한회사 | 무기물의 마이크로렌즈를 갖는 이미지센서 제조 방법 |
| KR100585137B1 (ko) * | 2004-03-10 | 2006-06-01 | 삼성전자주식회사 | 높은 집광 효율을 갖는 ｃｍｏｓ 이미지 소자 및 그제조방법 |
| JP2006310826A (ja) * | 2005-03-30 | 2006-11-09 | Fuji Photo Film Co Ltd | 固体撮像素子およびその製造方法 |
-
2000
- 2000-09-04 JP JP2000267397A patent/JP4345210B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002076316A (ja) | 2002-03-15 |
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