JP4337042B2 - 接合方法 - Google Patents
接合方法 Download PDFInfo
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- JP4337042B2 JP4337042B2 JP2004081970A JP2004081970A JP4337042B2 JP 4337042 B2 JP4337042 B2 JP 4337042B2 JP 2004081970 A JP2004081970 A JP 2004081970A JP 2004081970 A JP2004081970 A JP 2004081970A JP 4337042 B2 JP4337042 B2 JP 4337042B2
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- bonding
- ultrasonic vibration
- head
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- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 68
- 238000010008 shearing Methods 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 16
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
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Description
上記特許文献1のワークの沈込み量によって管理を行う方式で電子部品の接合状態を判定する場合には、良否の判定基準がバンプの大きさ、形状、表面状態に左右され、接合状態の正確な良否判定ができない恐れがある。特に接合部の酸化皮膜が付着するなどの表面状態が悪いと、電子部品の沈込み量で接合状態を判定することは難しい。
本発明の課題は、上述した従来技術の問題点を解決することであって、その目的は、超音波振動を利用して行うボンディングにおいて、良好な接合を達成できるようにするとともに、基板や電子部品に損傷を与えることなく、かつ、超音波振動の超過印加により既に完了している接合を破壊してしまうことのないようにして、信頼性の高い接合を実現することである。
また、本発明はチップを搭載した基板と、金線とを超音波接合するワイヤボンディングにおいて、ボンディング時にステージに加わる剪断力を検出、接合状態を判断し、超音波ヘッドの超音波振動を制御することができる。また、超音波振動をヘッド側に印加する方式に代え、ステージ側に印加するようにしてもよい。
本実施例の効果は、ステージ7に剪断力センサ6を取り付けることより、超音波ヘッドの軽量化が容易であり、電子部品1を基板2に搭載する瞬間に発生する衝撃力を低減することができることである。
次に、実施例1の動作について図を用いて説明する。ステージ7は予めヒータ8により、規定温度に加熱する。次に、基板2をステージ7に搭載・保持する。引続き、電子部品1を超音波ヘッド4で保持し、加圧機構9により、超音波ヘッド9を下降させ、電子部品1を基板2に搭載する。その後、所定の加圧力を加えるとともに、超音波ヘッド4を駆動して加熱と超音波振動により接合を実現する。超音波の印加にともなって、次第にバンプ3が潰れ接合が始まる。その後、超音波を継続的にかけることにより、全てのバンプが基板2の電極に接合される。接合が進むにつれて、図2に示すように次第に剪断力センサ6が検出する剪断力は大きくなり、予め設定した閾値剪断力に到達すると、接合完了と判断して、超音波制御部5は、超音波ヘッド4に超音波振動を停止させる。
超音波振動を停止する閾値剪断力の設定は、全てのバンプが接合完了し且つ基板2、バンプ3、電子部品1の許容剪断応力より小さく設定することが必要である。例えば、次のように閾値剪断力を決定することが考えられる。高さh、断面積aの円柱状バンプを接合する場合、この形状の1つのバンプの超音波接合が完了したときの基板と電子部品の相対振動振幅をwとすると、バンプ数nの電子部品の超音波接合が完了したときの剪断力F1は、バンプ3の横弾性係数をGとして、
F1=n×a×G×w/h
で与えられる。また、許容剪断力は、それぞれの部品で最も脆弱な部位(基板とパッドとの接合部、配線とパッドとの接合部、パッドとバンプとの接合部、バンプ、半導体基板等の中のいずれか)の許容剪断力F2を求める。従って、閾値剪断力Fの目安として
F1<F<F2
である。
本実施例の効果は、超音波ヘッド4に剪断力センサ6を取り付けることより、剪断力センサにステージ7に埋め込まれたヒータ8の熱が伝わりにくく、剪断力センサ3への耐熱対策が必要でなく熱設計が容易になることである。
動作については、実施例1の場合と同様である。
本実施例の効果は、剪断力センサを持つことなく超音波ヘッド4のインピーダンスを測定する方式なので、剪断力センサを持つ場合に比べ、超音波ヘッド4は軽量化が容易であるし、また、剪断力センサ6の熱対策の必要もなく、設計が容易な点である。
本実施例の効果は、ステージ7に剪断力センサ6を取り付けることより、超音波ヘッドの軽量化が容易であり、金線13を基板2に或いはチップ14にボンディングする瞬間に発生する衝撃力を低減することができることである。
尚、本発明の実施例4については、金線を保持するヘッドを超音波振動させたが、金線とチップを搭載した基板との間に相対的な超音波振動を与えることが目的であり、ステージ側を超音波振動させても良いし、金線を保持するヘッド側とチップを搭載した基板を保持するステージ側両方を超音波振動させても良い。また、本実施例では、剪断力センサにより接合状態を判断していたが、剪断力センサに代えインピーダンス検出器を用いて接合状態を判断するようにしてもよい。
2 基板
3 バンプ
4 超音波ヘッド
5 超音波制御部
6 剪断力センサ
7 ステージ
8 ヒータ
9 加圧機構
10 ベース
12 インピーダンス検出器
13 金線
14 チップ
15 XYステージ
Claims (3)
- 電子部材をヘッドで保持し、基板をステージで保持し、電子部材を基板に加圧するとともに、電子部材と基板の間に相対的な超音波振動を与えて両者間を接合する接合方法において、前記電子部材または前記基板の剪断方向の力を検出しつつ接合を行い、検出された剪断力が予め定められた閾値に達したら超音波振動のパワーを低減させるか超音波振動を停止させることを特徴とする接合方法。
- 電子部材をヘッドで保持し、基板をステージで保持し、電子部材を基板に加圧するとともに、電子部材と基板の間に相対的な超音波振動を与えて両者間を接合する接合方法において、超音波振動部に電力を供給する回路から見た超音波振動部のインピーダンスを検出しつつ接合を行い、検出されたインピーダンスが予め定められた閾値に達したら超音波振動のパワーを低減させるか超音波振動を停止させることを特徴とする接合方法。
- 加熱状態で接合を行うことを特徴とする請求項1または2に記載の接合方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004081970A JP4337042B2 (ja) | 2004-03-22 | 2004-03-22 | 接合方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004081970A JP4337042B2 (ja) | 2004-03-22 | 2004-03-22 | 接合方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005268676A JP2005268676A (ja) | 2005-09-29 |
JP4337042B2 true JP4337042B2 (ja) | 2009-09-30 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004081970A Expired - Lifetime JP4337042B2 (ja) | 2004-03-22 | 2004-03-22 | 接合方法 |
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JP (1) | JP4337042B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5171905B2 (ja) * | 2010-09-07 | 2013-03-27 | 三菱電機エンジニアリング株式会社 | 超音波接合制御装置及び超音波接合制御方法 |
JP5171923B2 (ja) * | 2010-10-28 | 2013-03-27 | 三菱電機エンジニアリング株式会社 | 超音波接合制御装置および超音波接合制御方法 |
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2004
- 2004-03-22 JP JP2004081970A patent/JP4337042B2/ja not_active Expired - Lifetime
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